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公开(公告)号：DE60013039D1
公开(公告)日：2004-09-23
申请号：DE60013039
申请日：2000-06-05
Applicant: SONY CORP
Inventor： HASHIMOTO SHIGEKI , YANASHIMA KATSUNORI , IKEDA MASAO , NAKAJIMA HIROSHI
Abstract: A semiconductor light emitting device using nitride III-V compound semiconductors is improved to reduce the threshold current density with almost no increase of the operation voltage. In a GaN semiconductor laser as one version thereof, the p-type cladding layer (10) is made of two or more semiconductor layers (10a, 10b) different in band gap, and a part (10a) of the p-type cladding layer (10) near one of its boundaries nearer to the active layer is made of a semiconductor layer having a larger band gap than that of the remainder part (10b). More specifically, in a AlGaN/GaN/GaInN SCH-structured GaN semiconductor laser, a p-type AlGaN cladding layer (10) is made of a p-type Alx1Ga1-x1N layer (10a) in contact with a p- type GaN optical guide layer (9), and a p-type Alx2Ga1-x2N layer (10b) overlying the p-type Alx1Ga1-x1N layer (10a) (where 0≤x2
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公开(公告)号：DE69711344T2
公开(公告)日：2002-11-14
申请号：DE69711344
申请日：1997-12-05
Applicant: SONY CORP
Inventor： YANASHIMA KATSUNORI , IKEDA MASAO , TOMIOKA SATOSHI
IPC: H01L21/205 , C30B25/02 , H01L21/20 , H01L21/203 , H01L33/12 , H01L33/32 , H01S5/00 , H01S5/323 , C30B29/40
Abstract: A method for growing nitride III-V compound semiconductor layers, comprises the steps of: growing a first BwAlxGayInzN layer (where 0≤w≤1, 0≤x≤1, 0≤y≤1, 0≤z≤1 and w+x+y+z=1) on a substrate by first vapor deposition at a growth rate not higher than 4 mu m/h; and growing a second BwAlxGayInzN layer (where 0≤w≤1, 0≤x≤1, 0≤y≤1, 0≤z≤1 and w+x+y+z=1) on the first BwAlxGayInzN layer by second vapor deposition at a growth rate higher than 4 mu m/h and not higher than 200 mu m/h. A method for fabricating a nitride III-V compound semiconductor substrate, comprises the steps of: growing a first BwAlxGayInzN layer (where 0≤w≤1, 0≤x≤1, 0≤y≤1, 0≤z≤1 and w+x+y+z=1) on a substrate by first vapor deposition at a growth rate not higher than 4 mu m/h; growing a second BwAlxGayInzN layer (where 0≤w≤1, 0≤x≤1, 0≤y≤1, 0≤y≤1 and w+x+y+z=1) on the first BwAlxGayInzN layer by second vapor deposition at a growth rate higher than 4 mu m/h and not higher than 200 mu m/h; and removing the substrate.
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公开(公告)号：SG49976A1
公开(公告)日：1998-06-15
申请号：SG1996010666
申请日：1995-09-08
Applicant: SONY CORP
Inventor： TAMAMURA KOSHI , TSUKAMOTO HIRONORI , IKEDA MASAO
IPC: C30B23/02 , H01L21/203 , H01L21/363 , H01L33/28 , H01S5/00 , H01L21/20 , H01L21/36
Abstract: A molecular beam epitaxy system having a plurality of chambers which contain at least a first chamber and a second chamber. The first chamber is used to form II-V column compound semiconductor layers not containing Te. The second chamber is used to form II-V column compound semiconductor layers containing at least Te. A semiconductor device having an ohmic characteristics can be fabricated without mixing Te into other layers.
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公开(公告)号：GB2178595A
公开(公告)日：1987-02-11
申请号：GB8618049
申请日：1986-07-24
Applicant: SONY CORP
Inventor： IKEDA MASAO
Abstract: A semiconductor laser device arranged so that at least one of cladding layers is formed of a thin AlGaInP layer having a larger energy band gap as compared with an active layer adjacent to the active layer and an AlGaAs layer having a high thermal conductivity as compared with that of the AlGaInP layer and the larger energy band gap as compared with the active layer, which is located between the AlGaInP layer and a heat sink, whereby a heat generated in the active layer is effectively radiated to the heat sink, thus the semiconductor laser being made capable of continuously emitting a laser light of a short wavelength at a room temperature.
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公开(公告)号：DE69313033D1
公开(公告)日：1997-09-18
申请号：DE69313033
申请日：1993-06-18
Applicant: SONY CORP
Inventor： IKEDA MASAO , ITO SATOSHI , IOCHI YOSHINO , MIYAJIMA TAKAO , OZAWA MASAFUMI , AKIMOTO KATSUHIRO , ISHIBASHI AKIRA , HIEI FUTOSHI
IPC: H01L29/15 , H01L21/44 , H01L33/06 , H01L33/28 , H01L33/40 , H01S5/042 , H01S5/30 , H01S5/327 , H01S5/347 , H01S3/025 , H01S3/19 , H01L33/00 , H01L31/0352
Abstract: A semiconductor laser capable of emitting blue or green light is disclosed. The semiconductor laser comprises an n-type ZnMgSSe cladding layer (2), an active layer (3), a p-type ZnMgSSe cladding layer (4), a p-type ZnSe contact layer (5) and a p-type ZnTe contact layer (6) which are stacked in this sequence on an n-type GaAs substrate (1). A p-side electrode (7) is provided on the p-type ZnTe contact layer (6). An n-side electrode (8) is provided on the back surface of the n-type GaAs substrate (1). A maltiquantum well layer (9) comprising quantum wells made of p-type ZnTe and barriers made of p-type ZnSe is provided in the depletion layer produced in the p-type ZnSe contact layer (5) along the junction interface between the p-type ZnSe contact layer (5) and the p-type ZnTe contact layer (6). Holes injected from the p-side electrode (7) pass through the junction by the resonant tunneling effect through quantum levels formed in the quantum wells of the multiquantum well layer (9).
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Patent Agency Ranking
公开(公告)号：SG35013A1
公开(公告)日：1997-02-01
申请号：SG1995001308
申请日：1995-09-08
Applicant: SONY CORP
Inventor： TAMAMURA KOSHI , TSUKAMOTO HIRONORI , IKEDA MASAO
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公开(公告)号：FR2585522B1
公开(公告)日：1994-07-08
申请号：FR8610793
申请日：1986-07-25
Applicant: SONY CORP
Inventor： IKEDA MASAO
Abstract: A semiconductor laser device arranged so that at least one of cladding layers is formed of a thin AlGaInP layer having a larger energy band gap as compared with an active layer adjacent to the active layer and an AlGaAs layer having a high thermal conductivity as compared with that of the AlGaInP layer and the larger energy band gap as compared with the active layer, which is located between the AlGaInP layer and a heat sink, whereby a heat generated in the active layer is effectively radiated to the heat sink, thus the semiconductor laser being made capable of continuously emitting a laser light of a short wavelength at a room temperature.
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公开(公告)号：DE60331042D1
公开(公告)日：2010-03-11
申请号：DE60331042
申请日：2003-10-23
Applicant: SUMITOMO ELECTRIC INDUSTRIES , SONY CORP
Inventor： NAKAYAMA MASAHIRO , MATSUMOTO NAOKI , TAMAMURA KOSHI , IKEDA MASAO
IPC: H01L21/302 , B24B37/00 , C30B29/38 , H01L21/20 , H01L21/304 , H01L21/306
Abstract: Nitride semiconductor wafers which are produced by epitaxially grown nitride films on a foreign undersubstrate in vapor phase have strong inner stress due to misfit between the nitride and the undersubstrate material. A GaN wafer which has made by piling GaN films upon a GaAs undersubstrate in vapor phase and eliminating the GaAs undersubstrate bends upward due to the inner stress owing to the misfit of lattice constants between GaN and GaAs. Ordinary one-surface polishing having the steps of gluing a wafer with a surface on a flat disc, bringing another surface in contact with a lower turntable, pressing the disc, rotating the disc, revolving the turntable and whetting the lower surface, cannot remedy the inherent distortion. The Distortion worsens morphology of epitaxial wafers, lowers yield of via-mask exposure and invites cracks on surfaces. Nitride crystals are rigid but fragile. Chemical/mechanical polishing has been requested in vain. Current GaN wafers have roughened bottom surfaces, which induce contamination of particles and fluctuation of thickness. Circular nitride wafers having a diameter larger than 45mm are made and polished. Gross-polishing polishes the nitride wafers in a pressureless state with pressure less than 60g/cm by lifting up the upper turntable for remedying distortion. Distortion height H at a center is reduced to H≤12 mu m. Minute-polishing is a newly-contrived CMP which polishes the nitride wafers with a liquid including potassium hydroxide, potassium peroxodisulfate and powder, irradiates the potassium peroxodisulfate with ultraviolet rays. The CMP-polished top surface has roughness RMS of 0.1nm≤RMS≤5nm or more favorably 0.1nm≤RMS≤0.5nm. The CMP-polished bottom surface has roughness RMS of 0.1nm≤RMS≤5000nm or more favorably 0.1nm≤RMS≤2nm. TTV is less than 10 mu m.
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公开(公告)号：DE60013039T2
公开(公告)日：2005-09-08
申请号：DE60013039
申请日：2000-06-05
Applicant: SONY CORP
Inventor： HASHIMOTO SHIGEKI , YANASHIMA KATSUNORI , IKEDA MASAO , NAKAJIMA HIROSHI
Abstract: A semiconductor light emitting device using nitride III-V compound semiconductors is improved to reduce the threshold current density with almost no increase of the operation voltage. In a GaN semiconductor laser as one version thereof, the p-type cladding layer (10) is made of two or more semiconductor layers (10a, 10b) different in band gap, and a part (10a) of the p-type cladding layer (10) near one of its boundaries nearer to the active layer is made of a semiconductor layer having a larger band gap than that of the remainder part (10b). More specifically, in a AlGaN/GaN/GaInN SCH-structured GaN semiconductor laser, a p-type AlGaN cladding layer (10) is made of a p-type Alx1Ga1-x1N layer (10a) in contact with a p- type GaN optical guide layer (9), and a p-type Alx2Ga1-x2N layer (10b) overlying the p-type Alx1Ga1-x1N layer (10a) (where 0≤x2
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公开(公告)号：DE3625145C2
公开(公告)日：1999-12-16
申请号：DE3625145
申请日：1986-07-25
Applicant: SONY CORP
Inventor： IKEDA MASAO
Abstract: A semiconductor laser device arranged so that at least one of cladding layers is formed of a thin AlGaInP layer having a larger energy band gap as compared with an active layer adjacent to the active layer and an AlGaAs layer having a high thermal conductivity as compared with that of the AlGaInP layer and the larger energy band gap as compared with the active layer, which is located between the AlGaInP layer and a heat sink, whereby a heat generated in the active layer is effectively radiated to the heat sink, thus the semiconductor laser being made capable of continuously emitting a laser light of a short wavelength at a room temperature.
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