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21 records (took 0.029 seconds)

    11.
    发明专利
    未知

    公开(公告)号：DE69734280D1

    公开(公告)日：2006-02-09

    申请号：DE69734280

    申请日：1997-07-10

    Applicant: ST MICROELECTRONICS SRL

    Inventor： VIGNA BENEDETTO ,  FERRARI PAOLO ,  FERRERA MARCO ,  MONTANINI PIETRO

    IPC: B81B3/00 ,  G01C19/00 ,  G01C19/56 ,  G01P15/00 ,  G01P15/08 ,  G01P15/125 ,  H01L21/00 ,  H01L21/762 ,  H01L21/764 ,  H01L29/84

    Abstract: To increase the sensitivity of the sensor the suspended structure (40) forming the seismic mass has a tungsten core (26) which has high density. To manufacture it, a sacrificial layer (21) of silicon oxide, a polycrystal silicon layer (24), a tungsten layer (26) and a silicon carbide layer (28) are deposited in succession over a single crystal silicon body (1); the suspended structure (40) is defined by selectively removing the silicon carbide (28), tungsten (26) and polycrystal silicon (24) layers; spacers (30') of silicon carbide are formed which cover the uncovered ends of the tungsten layer (26); and the sacrificial layer (21) is then removed.

    14.
    发明专利
    未知

    公开(公告)号：DE69702745T2

    公开(公告)日：2000-12-07

    申请号：DE69702745

    申请日：1997-03-04

    Applicant: ST MICROELECTRONICS SRL

    Inventor： VIGNA BENEDETTO ,  FERRARI PAOLO ,  MONTANINI PIETRO ,  FERRERA MARCO

    IPC: G01L9/08 ,  G01L9/00 ,  H01L29/84

    Abstract: The method described provides for the formation of a region of silicon dioxide on a substrate (11) of monocrystalline silicon, the epitaxial growth of a silicon layer, the opening of holes (14') in the silicon layer above the silicon dioxide region, and the removal of the silicon dioxide which constitutes the region by means of chemical attack through the holes (14') until a silicon diaphragm (12'), attached to the substrate (11) along the edges and separated therefrom by a space (15), is produced. In order to form an absolute pressure microsensor, the space has to be sealed. To do this, the method provides for the holes (14') to have diameters smaller than the thickness of the diaphragm (12') and to be closed by the formation of a silicon dioxide layer (16) by vapour-phase deposition at atmospheric pressure.

    15.
    发明专利
    未知

    公开(公告)号：DE69702745D1

    公开(公告)日：2000-09-14

    申请号：DE69702745

    申请日：1997-03-04

    Applicant: ST MICROELECTRONICS SRL

    Inventor： VIGNA BENEDETTO ,  FERRARI PAOLO ,  MONTANINI PIETRO ,  FERRERA MARCO

    IPC: G01L9/08 ,  G01L9/00 ,  H01L29/84

    Abstract: The method described provides for the formation of a region of silicon dioxide on a substrate (11) of monocrystalline silicon, the epitaxial growth of a silicon layer, the opening of holes (14') in the silicon layer above the silicon dioxide region, and the removal of the silicon dioxide which constitutes the region by means of chemical attack through the holes (14') until a silicon diaphragm (12'), attached to the substrate (11) along the edges and separated therefrom by a space (15), is produced. In order to form an absolute pressure microsensor, the space has to be sealed. To do this, the method provides for the holes (14') to have diameters smaller than the thickness of the diaphragm (12') and to be closed by the formation of a silicon dioxide layer (16) by vapour-phase deposition at atmospheric pressure.

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