公开(公告)号：IT1321049B1

公开(公告)日：2003-12-30

申请号：ITTO20001049

申请日：2000-11-07

Applicant: ST MICROELECTRONICS SRL

Inventor： GREGORI STEFANO ,  FERRARI PIETRO ,  TORELLI GUIDO

IPC: H03M13/00

公开(公告)号：IT1319037B1

公开(公告)日：2003-09-23

申请号：ITMI20002337

申请日：2000-10-27

Applicant: ST MICROELECTRONICS SRL

Inventor： KHOURI OSAMA ,  GREGORI STEFANO ,  PIERIN ANDREA ,  MICHELONI RINO ,  CORONINI SERGIO ,  TORELLI GUIDO

IPC: G11C7/06 ,  G11C11/56 ,  G11C16/28 ,  G11C27/00

Abstract: A circuit for reading a non-volatile memory cell has an output terminal for providing an output current, and a control terminal for receiving a voltage for controlling the output current. The reading circuit includes a feedback circuit which can be connected electrically to the output terminal and to the control terminal to generate the control voltage from a reference signal and from the output current. The feedback circuit also includes a current-amplification circuit having a first terminal for receiving a current-error signal derived from the reference signal and from the output current, and a second terminal for supplying an amplified current.

公开(公告)号：IT1318158B1

公开(公告)日：2003-07-23

申请号：ITMI20001585

申请日：2000-07-13

Applicant: ST MICROELECTRONICS SRL

Inventor： KHOURI OSAMA ,  PIERIN ANDREA ,  MICHELONI RINO ,  GREGORI STEFANO ,  TORELLI GUIDONO ,  SANGALLI MIRIAM

IPC: G11C16/08

Abstract: A circuit device for performing hierarchic row decoding in semiconductor memory devices of the non-volatile type, which memory devices include an array of memory cells with column-ordered sectors, wherein each sector has a respective group of local wordlines linked to a main wordline. The circuit device includes a main wordline driver provided at each main wordline, and a local decoder provided at each local wordline. This circuit device further comprises, for each main wordline, a dedicated path connected between the main wordline and the local decoders of the associated local wordlines and connected to an external terminal arranged to receive a read/program voltage, the dedicated path enabling transfer of the read/program voltage to the local decoders.

公开(公告)号：ITMI20002337A1

公开(公告)日：2002-04-29

申请号：ITMI20002337

申请日：2000-10-27

Applicant: ST MICROELECTRONICS SRL

Inventor： TORELLI GUIDO ,  MICHELONI RINO ,  KHOURI OSAMA ,  PIERIN ANDREA ,  GREGORI STEFANO ,  CORONINI SERGIO

IPC: G11C7/06 ,  G11C11/56 ,  G11C16/28 ,  G11C27/00

Abstract: A circuit for reading a non-volatile memory cell has an output terminal for providing an output current, and a control terminal for receiving a voltage for controlling the output current. The reading circuit includes a feedback circuit which can be connected electrically to the output terminal and to the control terminal to generate the control voltage from a reference signal and from the output current. The feedback circuit also includes a current-amplification circuit having a first terminal for receiving a current-error signal derived from the reference signal and from the output current, and a second terminal for supplying an amplified current.