公开(公告)号：EP4092756A2

公开(公告)日：2022-11-23

申请号：EP22184384.0

申请日：2018-06-08

Applicant: STMicroelectronics S.r.l.

Inventor： IUCOLANO, Ferdinando ,  CHINI, Alessandro

IPC: H01L29/778 ,  H01L21/336 ,  H01L29/10 ,  H01L29/417 ,  H01L29/20 ,  H01L29/423 ,  H01L29/207

Abstract: HEMT (1; 21; 31; 51) including a buffer layer (4), a hole-supply layer (6) on the buffer layer (4), a heterostructure (7) on the hole-supply layer (6), and a source electrode (16). The hole-supply layer (6) is made of P-type doped semiconductor material, the buffer layer (4) is doped with carbon, and the source electrode (16) is in direct electrical contact with the hole-supply layer (6), such that the hole-supply layer (6) can be biased to facilitate the transport of holes from the hole-supply layer (6) to the buffer layer (4) .

公开(公告)号：EP3817032A1

公开(公告)日：2021-05-05

申请号：EP20202878.3

申请日：2020-10-20

Applicant: STMicroelectronics S.r.l.

Inventor： IUCOLANO, Ferdinando ,  TRINGALI, Cristina

IPC: H01L21/285 ,  H01L29/20 ,  H01L29/47 ,  H01L29/778

Abstract: Method for manufacturing a HEMT device (1) including the steps of: forming, on a heterostructure (3), a single dielectric layer (7); forming a through opening (9) through the dielectric layer; and forming a gate electrode (8) at the through opening. Forming the gate electrode includes: forming a sacrificial structure (34); depositing by evaporation a Ni layer (20); carrying out a lift-off of the sacrificial structure; depositing a WN layer (22) by sputtering; and depositing an Al layer (24). The WN layer forms a barrier against the diffusion of Al atoms towards the heterostructure.

公开(公告)号：EP3413352A1

公开(公告)日：2018-12-12

申请号：EP18176875.5

申请日：2018-06-08

Applicant: STMicroelectronics S.r.l.

Inventor： IUCOLANO, Ferdinando ,  CHINI, Alessandro

IPC: H01L29/778 ,  H01L21/336 ,  H01L29/10 ,  H01L29/417 ,  H01L29/423 ,  H01L29/207 ,  H01L29/20

CPC classification number: H01L29/778 ,  H01L29/0847 ,  H01L29/1087 ,  H01L29/2003 ,  H01L29/207 ,  H01L29/41725 ,  H01L29/41766 ,  H01L29/4232 ,  H01L29/4236 ,  H01L29/66462 ,  H01L29/7786

Abstract: HEMT (1; 21; 31; 51) including a buffer layer (4), a hole-supply layer (6) on the buffer layer (4), a heterostructure (7) on the hole-supply layer (6), and a source electrode (16). The hole-supply layer (6) is made of P-type doped semiconductor material, the buffer layer (4) is doped with carbon, and the source electrode (16) is in direct electrical contact with the hole-supply layer (6), such that the hole-supply layer (6) can be biased to facilitate the transport of holes from the hole-supply layer (6) to the buffer layer (4).

公开(公告)号：EP3252825A1

公开(公告)日：2017-12-06

申请号：EP16425047.4

申请日：2016-05-30

Applicant: STMicroelectronics S.r.l.

Inventor： IUCOLANO, Ferdinando ,  CHINI, Alessandro

IPC: H01L29/66 ,  H01L29/778 ,  H01L29/20

CPC classification number: H01L29/7787 ,  H01L21/02458 ,  H01L21/0254 ,  H01L29/0657 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/402 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/42376 ,  H01L29/66462 ,  H01L29/66522 ,  H01L29/7786

Abstract: An HEMT device (1), comprising: a semiconductor body (15) including a heterojunction structure (13); a dielectric layer (7) on the semiconductor body; a gate electrode (8); a drain electrode (12), facing a first side (8') of the gate electrode (8); and a source electrode (10), facing a second side (8") opposite to the first side (8') of the gate electrode; an auxiliary channel layer (20), which extends over the heterojunction structure (13) between the gate electrode (8) and the drain electrode (12), in electrical contact with the drain electrode (12) and at a distance from the gate electrode, and forming an additional conductive path for charge carriers that flow between the source electrode and the drain electrode.

Abstract translation: 一种HEMT器件（1），包括：包括异质结结构（13）的半导体主体（15）; 在半导体主体上的介电层（7） 一个栅电极（8）; 漏电极（12），面对栅电极（8）的第一侧（8'）; 和面向与所述栅电极的所述第一侧（8'）相对的第二侧（8“）的源电极（10）;辅助沟道层（20），其在所述异质结结构（13） 电极（8）和漏电极（12），与漏电极（12）电接触并与栅电极隔开一定距离，并形成用于在源电极和漏电极之间流动的电荷载流子的附加导电路径 。

公开(公告)号：EP4231360A1

公开(公告)日：2023-08-23

申请号：EP23156230.7

申请日：2023-02-13

Applicant: STMicroelectronics S.r.l.

Inventor： IUCOLANO, Ferdinando ,  SEVERINO, Andrea ,  GRECO, Giuseppe ,  ROCCAFORTE, Fabrizio

IPC: H01L29/778 ,  H01L21/338 ,  H01L29/417 ,  H01L29/20

Abstract: For the manufacturing of a HEMT device (50), from a wafer (2) of silicon carbide having a surface (2A), an epitaxial layer (4) of silicon carbide is formed on the surface (2A) of the wafer (2), a semiconductive heterostructure (5) is formed on the epitaxial layer, and the wafer of silicon carbide is removed.

公开(公告)号：EP4220687A1

公开(公告)日：2023-08-02

申请号：EP23152626.0

申请日：2023-01-20

Applicant: STMicroelectronics S.r.l.

Inventor： IUCOLANO, Ferdinando ,  GRECO, Giuseppe ,  BADALA', Paolo ,  ROCCAFORTE, Fabrizio ,  SPERA, Monia

IPC: H01L21/285 ,  H01L29/45 ,  H01L21/335 ,  H01L29/778 ,  H01L21/027 ,  H01L29/20 ,  H01L29/417

Abstract: For manufacturing a HEMT device (1), a conductive region (15, 16) is formed on a work body (50) having a semiconductive heterostructure (8). To obtain the conductive region, a first reaction region (66) having carbon is formed on the heterostructure; and a metal stack (70) is formed having a second reaction region (70A) in contact with the first reaction region. The work body is annealed, so that the first reaction region (66) reacts with the second reaction region (70A), thus forming an interface portion (25) of the conductive region. The interface portion is of a compound having carbon and is in ohmic contact with the semiconductive heterostructure.