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    Fast reading, low power consumption memory device and reading method thereof
    13.
    发明公开
    Fast reading, low power consumption memory device and reading method thereof 审中-公开
    存储器阵列具有快速读出操作和更低的功耗和相应的读出方法

    公开(公告)号：EP1548744A1

    公开(公告)日：2005-06-29

    申请号：EP03425820.2

    申请日：2003-12-23

    Applicant: STMicroelectronics S.r.l. ,  OVONYX Inc.

    Inventor： Resta, Claudio ,  Bedeschi, Ferdinando ,  Torelli, Guido

    IPC: G11C11/34 ,  G11C8/10

    CPC classification number: G11C13/0004 ,  G11C7/12 ,  G11C13/0023 ,  G11C13/0026 ,  G11C13/0028 ,  G11C13/004

    Abstract: A memory device includes a plurality of memory cells (3), arranged in row and columns, memory cells (3) arranged on the same column having respective first terminals (3a) connected to a same bit line (12) and memory cells (3) arranged on the same row having respective second terminals (3b) selectively connectable to a same word line (13); a supply line (9) providing a supply voltage (V A ); a column addressing circuit (4) for addressing a bit line (12) corresponding to a memory cell (3) to be read; and a row addressing circuit (5) for addressing a word line (13) corresponding to the memory cell (3) to be read. Moreover, the column addressing circuit (4) is configured to bias the addressed bit line (12) corresponding to the memory cell (3) to be read substantially at the supply voltage (V A ).

    Abstract translation: 一种存储器装置包括布置在具有连接到相同的位线（12）和存储单元respectivement第一端子（3a）中同一列的存储单元的多个（3），以行和列排列的存储器单元（3）（3 ）布置在具有respectivement第二端子在同一行（3B）选择性地连接到一个相同的字线（13）; 一电源线（9）提供电源电压（VA）; 用于寻址对应于存储单元（3）要被读出的位线（12）的柱寻址电路（4）; 和要被读取用于寻址对应于存储单元（3）的字线（13）的行寻址电路（5）。 更完了，列寻址电路（4）被配置成偏置相应于存储单元（3）被寻址的位线（12）被在电源电压（VA）基本上读取。

    Circuit and method for temperature tracing of devices including an element of chalcogenic material, in particular phase change memory devices
    14.
    发明公开
    Circuit and method for temperature tracing of devices including an element of chalcogenic material, in particular phase change memory devices 有权
    和用于chalcogenische元件，特别是相变存储器元件的Tempeaturüberwachung电路布置

    公开(公告)号：EP1420412A1

    公开(公告)日：2004-05-19

    申请号：EP02425706.5

    申请日：2002-11-18

    Applicant: STMicroelectronics S.r.l. ,  OVONYX Inc.

    Inventor： Khouri, Osama ,  Bedeschi, Ferdinando ,  Resta, Claudio

    IPC: G11C11/34

    CPC classification number: G11C7/04 ,  G11C13/0004 ,  G11C13/004 ,  G11C13/0069 ,  G11C2013/0078 ,  G11C2013/009 ,  G11C2029/5002 ,  G11C2213/79

    Abstract: A phase change memory includes a temperature sensor having a resistance variable with temperature with the same law as a phase-change storage element. The temperature sensor is formed by a resistor (20) of chalcogenic material furnishing an electrical quantity (V(T), I(T)) that reproduces the relationship between the resistance of a phase change memory cell and temperature; the electrical quantity is processed (21) so as to generate reference quantities as necessary for writing and reading the memory cells. The chalcogenic resistor (20) has the same structure as a memory cell and is programmed with precision, preferably in the reset state.

    Abstract translation: 一种相变存储器包括：具有与具有相同法律作为一种相变存储元件温度的电阻变化的温度传感器。 温度传感器由电量的硫族化物材料的家具的电阻器（20）所形成（V（T），I（T））做再现相变存储单元和温度的电阻之间的关系; 电量进行处理（21），以便产生参考量所必需的写入和读出的存储器单元。 硫属化物的电阻（20）具有相同的结构的存储单元和被编程有精度，最好是在复位状态。

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