公开(公告)号：CN103025648A

公开(公告)日：2013-04-03

申请号：CN201180032552.5

申请日：2011-06-29

Applicant: 原子能和替代能源委员会

Inventor： 文森特·阿加什 ,  安东尼·欧昂 ,  弗朗索瓦丝·维内

IPC: B81C1/00

CPC classification number: G03F7/24 ,  B81B2201/0214 ,  B81B2201/058 ,  B81B2201/06 ,  B81C1/00206 ,  B81C2201/0154 ,  F04B19/006

Abstract: 本发明涉及一种用于使微机械器件中的流体管道(1b)功能化的方法，所述流体管道的壁包括不透明层。为此目的，本发明提供一种用于使设置有流体管道的微机械器件功能化的方法，所述流体管道包括外围壁(5)，所述外围壁具有在所述管道外面的表面(2)和内表面(3)，所述内表面限定流体能在其中循环的空间(1b)，所述外围壁至少部分地包括硅层(5a)。所述方法包括下列步骤：a)提供器件，所述器件的外围壁(5)至少部分地包括至少局部具有大于100nm且小于200nm，有利地为160～180nm厚度(e)的硅层(5a)；c)至少硅烷化所述流体管道的内表面；d)通过在所述壁上具有大于100nm且小于200nm，有利地为160～180nm厚度的点处使所述外围壁曝光，而至少在硅烷化器件的内表面上局部地、选择性地光去保护。

公开(公告)号：EP2588405A1

公开(公告)日：2013-05-08

申请号：EP11738320.8

申请日：2011-06-29

Applicant: Commissariat à l'Énergie Atomique et aux Énergies Alternatives

Inventor： AGACHE, Vincent ,  HOANG, Antoine ,  VINET, Françoise

IPC: B81C1/00

CPC classification number: G03F7/24 ,  B81B2201/0214 ,  B81B2201/058 ,  B81B2201/06 ,  B81C1/00206 ,  B81C2201/0154 ,  F04B19/006

Abstract: The present invention relates to a method for functionalising fluid lines (1b) in a micromechanical device, the walls of which include an opaque layer. For this purpose, the invention provides a method for functionalising a micromechanical device provided with a fluid line including a peripheral wall (5) having a surface (2) outside the line and an inner surface (3) defining a space (1b) in which a fluid can circulate, the peripheral wall at least partially including a silicon layer (5a). The method includes the following steps: a) providing a device, the peripheral wall (5) of which at least partially includes a silicon layer (5a) having, at least locally, a thickness (e) of more than 100 nm and less than 200 nm, advantageously of 160 to 180 nm; c) silanising at least the inner surface of the fluid line; d) the localised, selective photo-deprotection on at least the inner surface of the silanised device by exposing the peripheral wall (5) at the point at which said wall has a thickness (e) of more than 100 nm and less than 200 nm, advantageously of 160 to 180 nm.

公开(公告)号：WO2012135768A1

公开(公告)日：2012-10-04

申请号：PCT/US2012/031701

申请日：2012-03-30

Applicant: ROLANDI, Marco ,  BRASINO, Michael ,  KAPETANOVIC, Adnan ,  TALLA, Vamsi ,  VASKO, Stephanie ,  SATO, Hideki

Inventor： ROLANDI, Marco ,  BRASINO, Michael ,  KAPETANOVIC, Adnan ,  TALLA, Vamsi ,  VASKO, Stephanie ,  SATO, Hideki

IPC: H01L21/20

CPC classification number: H01L21/02636 ,  B81C1/00492 ,  B81C2201/0154 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  H01L21/02532 ,  H01L21/02656

Abstract: Methods for forming inorganic nanostructures are provided. The methods create the inorganic nanostructures by positioning a writing electrode (e.g.. a conductive "stamp") spaced nanometers above a substrate such that a precursor is intermediate the two. Applying an electric field, a voltage bias, an ionic current, or an electronic current between the writing electrode and the substrate converts the precursor into an inorganic solid material (e.g., a semiconductor such as silicon or germanium) in the area of the writing electrode.

Abstract translation: 提供了形成无机纳米结构的方法。 该方法通过将位于衬底上方的纳米级的书写电极（例如，导电“印模”）定位，使得前体位于两者之间来产生无机纳米结构。 在写入电极和衬底之间施加电场，电压偏置，离子电流或电子电流在写入电极的区域中将前体转化为无机固体材料（例如半导体，例如硅或锗） 。

公开(公告)号：WO2008102620A1

公开(公告)日：2008-08-28

申请号：PCT/JP2008/051427

申请日：2008-01-30

Applicant: 日東電工株式会社 ,  前野 洋平 ,  吉田 良徳 ,  菅生 悠樹

Inventor： 前野 洋平 ,  吉田 良徳 ,  菅生 悠樹

IPC: B82B3/00 ,  B82B1/00

CPC classification number: B81C1/00111 ,  B81C2201/0154 ,  C09J7/00 ,  C09J2201/626

Abstract: 　ヤモリの足裏に見られる微細な二段の階層を有する構造体を模倣した構造体を、人工的に、簡便かつ容易に作製する方法を提供すること。 　基材上において多孔質膜の孔に樹脂を充填する工程（１）；該樹脂を硬化して柱状構造部を形成する工程（２）；該柱状構造部の端部にプラズマエッチング処理を行い、二段の階層を有する柱状構造部を形成する工程（３）；および該多孔質膜を該基材から除去する工程（４）；を含む、二段の階層を有する柱状構造体の製造方法。  

Abstract translation: 本发明提供一种以简单易行的方式人工制作模仿两层分层结构的结构的方法。 制备两阶段分级柱状结构的方法包括用树脂填充基材上的多孔膜中的孔的步骤（1），步骤（2）使树脂固化形成柱状结构部分，步骤（3） 等离子体蚀刻柱状结构部分的端部以形成两级分级柱状结构部分，以及从基材除去多孔膜的步骤（4）。

公开(公告)号：JP5645836B2

公开(公告)日：2014-12-24

申请号：JP2011533934

申请日：2009-11-03

Applicant: イエダ・リサーチ・アンド・デベロツプメント・カンパニー・リミテツド

Inventor： ロン・ナーマン ,  アモス・バーデア ,  アレクサンダー・ヨッフェ

IPC: H01L21/027 ,  B82Y40/00

CPC classification number: C12M23/06 ,  B81C1/00031 ,  B81C2201/0154 ,  B81C2201/0198 ,  C12M27/00 ,  H01F41/16

公开(公告)号：US20240253977A1

公开(公告)日：2024-08-01

申请号：US18414932

申请日：2024-01-17

Applicant: Infineon Technologies AG

Inventor： Hutomo Suryo Wasisto ,  Sebastian Anzinger ,  Fabian Streb

IPC: B81C1/00 ,  B81B3/00

CPC classification number: B81C1/00182 ,  B81B3/0027 ,  B81B2201/0257 ,  B81B2203/0127 ,  B81C2201/0109 ,  B81C2201/0143 ,  B81C2201/0149 ,  B81C2201/0154

Abstract: In accordance with an embodiment, a method producing a microelectromechanical system (MEMS) device includes: providing a substrate comprising a first substrate surface and an opposite second substrate surface, wherein the substrate comprises a sacrificial layer arranged at the first substrate surface; depositing a membrane material layer onto the sacrificial layer; the membrane material layer forms a free-standing membrane structure covering the cavity; and creating nanostructures in at least one of a first membrane surface or an opposite second membrane surface of the membrane material layer, wherein the nanostructures protrude from the respective membrane surface of the membrane material layer, and the nanostructures are created by applying a laser structuring process.

公开(公告)号：US20180065847A1

公开(公告)日：2018-03-08

申请号：US15807661

申请日：2017-11-09

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Stephen E. LUCE ,  Anthony K. STAMPER

IPC: B81C1/00 ,  H01H59/00 ,  H01H11/00 ,  H01H49/00 ,  H01H1/58

CPC classification number: B81C1/00698 ,  B81C1/0015 ,  B81C1/00166 ,  B81C1/00523 ,  B81C2201/0132 ,  B81C2201/0133 ,  B81C2201/0145 ,  B81C2201/0154 ,  B81C2203/0145 ,  H01H1/0036 ,  H01H1/58 ,  H01H11/00 ,  H01H49/00 ,  H01H59/00 ,  H01H59/0009 ,  H01H2059/0018 ,  Y10T29/49105

Abstract: An approach includes a method of fabricating a switch. The approach includes forming a first cantilevered electrode over a first electrode, forming a second cantilevered electrode over a second electrode and operable to directly contact the first cantilevered electrode upon an application of a voltage to at least one of the first electrode and a second electrode, and the first cantilevered electrode includes an arm with an extending protrusion which extends upward from an upper surface of the arm.

公开(公告)号：US20170183222A1

公开(公告)日：2017-06-29

申请号：US15457498

申请日：2017-03-13

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor： JUNG-HUEI PENG ,  CHIA-HUA CHU ,  FEI-LUNG LAI ,  SHIANG-CHI LIN

IPC: B81C1/00

CPC classification number: B81C1/00238 ,  B81B7/0038 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81B2203/04 ,  B81B2207/012 ,  B81C1/00285 ,  B81C2201/0125 ,  B81C2201/0154 ,  B81C2201/019 ,  B81C2203/0118 ,  B81C2203/035 ,  B81C2203/0792

Abstract: The present disclosure provides a CMOS structure, including a substrate, a metallization layer over the substrate, a sensing structure over the metallization layer, and a signal transmitting structure adjacent to the sensing structure. The sensing structure includes an outgassing layer over the metallization layer, a patterned outgassing barrier over the outgassing layer; and an electrode over the patterned outgassing barrier. The signal transmitting structure electrically couples the electrode and the metallization layer.

公开(公告)号：US08451077B2

公开(公告)日：2013-05-28

申请号：US12107118

申请日：2008-04-22

Applicant: Stephen E. Luce ,  Anthony K. Stamper

Inventor： Stephen E. Luce ,  Anthony K. Stamper

IPC: H01H51/22

CPC classification number: B81C1/00698 ,  B81C1/0015 ,  B81C1/00166 ,  B81C1/00523 ,  B81C2201/0132 ,  B81C2201/0133 ,  B81C2201/0145 ,  B81C2201/0154 ,  B81C2203/0145 ,  H01H1/0036 ,  H01H1/58 ,  H01H11/00 ,  H01H49/00 ,  H01H59/00 ,  H01H59/0009 ,  H01H2059/0018 ,  Y10T29/49105

Abstract: MEMS switches and methods of manufacturing MEMS switches is provided. The MEMS switch having at least two cantilevered electrodes having ends which overlap and which are structured and operable to contact one another upon an application of a voltage by at least one fixed electrode.

公开(公告)号：US20120167262A1

公开(公告)日：2012-06-28

申请号：US13375361

申请日：2010-06-04

Applicant: Chad A. Mirkin ,  Wooyoung Shim ,  Adam B. Braunschweig ,  Xing Liao ,  Jinan Chai ,  Jong Kuk Lim ,  Gengfeng Zheng ,  Zijian Zheng

Inventor： Chad A. Mirkin ,  Wooyoung Shim ,  Adam B. Braunschweig ,  Xing Liao ,  Jinan Chai ,  Jong Kuk Lim ,  Gengfeng Zheng ,  Zijian Zheng

IPC: G01Q70/14 ,  G01Q70/16

CPC classification number: G03F7/0002 ,  B81B2203/0361 ,  B81B2207/056 ,  B81C1/00111 ,  B81C1/0046 ,  B81C2201/0154 ,  B81C2201/0185 ,  B82Y10/00 ,  B82Y40/00 ,  Y10S977/732

Abstract: Disclosed are methods of lithography using a tip array having a plurality of pens attached to a backing layer, where the tips can comprise a metal, metalloid, and/or semi-conducting material, and the backing layer can comprise an elastomeric polymer. The tip array can be used to perform a lithography process in which the tips are coated with an ink (e.g., a patterning composition) that is deposited onto a substrate upon contact of the tip with the substrate surface. The tips can be easily leveled onto a substrate and the leveling can be monitored optically by a change in light reflection of the backing layer and/or near the vicinity of the tips upon contact of the tip to the substrate surface.

Abstract translation: 公开了使用具有连接到背衬层的多个笔的尖端阵列的光刻方法，其中尖端可以包括金属，准金属和/或半导电材料，并且背衬层可以包括弹性体聚合物。 尖端阵列可用于执行光刻工艺，其中尖端涂覆有当尖端与衬底表面接触时沉积到衬底上的油墨（例如，图案化组合物）。 尖端可以容易地平整到基底上，并且可以通过背衬层的光反射的变化和/或在尖端与基底表面接触时靠近尖端附近来光学地监测流平。