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公开(公告)号：US08333934B2
公开(公告)日：2012-12-18
申请号：US11536178
申请日：2006-09-28
Applicant: Han Cao , Jonas O. Tegenfeldt , Stephen Chou , Robert H. Austin
Inventor： Han Cao , Jonas O. Tegenfeldt , Stephen Chou , Robert H. Austin
CPC classification number: G01N21/6486 , B01L3/502707 , B01L3/502715 , B01L3/502746 , B01L3/502761 , B01L2200/027 , B01L2200/0663 , B01L2200/12 , B01L2300/0654 , B01L2300/0896 , B01L2400/0415 , B01L2400/086 , B81B2201/058 , B81C1/00119 , B81C2201/0157 , B81C2201/0159 , B82Y30/00 , G01N33/48721 , G03F7/2008 , Y10T436/143333
Abstract: The present invention relates to a device for interfacing nanofluidic and microfluidic components suitable for use in performing high throughput macromolecular analysis. Diffraction gradient lithography (DGL) is used to form a gradient interface between a microfluidic area and a nanofluidic area. The gradient interface area reduces the local entropic barrier to nanochannels formed in the nanofluidic area. In one embodiment, the gradient interface area is formed of lateral spatial gradient structures for narrowing the cross section of a value from the micron to the nanometer length scale. In another embodiment, the gradient interface area is formed of a vertical sloped gradient structure. Additionally, the gradient structure can provide both a lateral and vertical gradient.
Abstract translation: 本发明涉及适用于进行高通量大分子分析的纳米流体和微流体组分的界面装置。 衍射梯度光刻（DGL）用于在微流体区域和纳流体区域之间形成梯度界面。 梯度界面面积减小了在纳米流体区域形成的纳米通道的局部熵阻挡。 在一个实施例中，梯度界面区域由横向空间梯度结构形成，用于使从微米到纳米长度尺度的值的横截面变窄。 在另一个实施例中，梯度界面区域由垂直倾斜梯度结构形成。 此外，梯度结构可以提供横向和垂直梯度。
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12.发明申请Gradient structures interfacing microfluidics and nanofluidics, methods for fabrication and uses thereof 有权界面微流体和纳米流体的梯度结构，其制造方法和用途公开(公告)号：US20040033515A1
公开(公告)日：2004-02-19
申请号：US10414620
申请日：2003-04-16
Inventor： Han Cao , Jonas O. Tegenfeldt , Stephen Chou , Robert H. Austin
IPC: C12Q001/68 , C12M001/34 , C12M003/00 , G03F007/16 , G03F007/20 , G03F007/40 , C23C014/34 , G03B027/32 , G03B027/52 , G21G005/00
CPC classification number: G01N21/6486 , B01L3/502707 , B01L3/502715 , B01L3/502746 , B01L3/502761 , B01L2200/027 , B01L2200/0663 , B01L2200/12 , B01L2300/0654 , B01L2300/0896 , B01L2400/0415 , B01L2400/086 , B81B2201/058 , B81C1/00119 , B81C2201/0157 , B81C2201/0159 , B82Y30/00 , G01N33/48721 , G03F7/2008 , Y10T436/143333
Abstract: The present invention relates to a device for interfacing nanofluidic and microfluidic components suitable for use in performing high throughput macromolecular analysis. Diffraction gradient lithography (DGL) is used to form a gradient interface between a microfluidic area and a nanofluidic area. The gradient interface area reduces the local entropic barrier to nanochannels formed in the nanofluidic area. In one embodiment, the gradient interface area is formed of lateral spatial gradient structures for narrowing the cross section of a value from the micron to the nanometer length scale. In another embodiment, the gradient interface area is formed of a vertical sloped gradient structure. Additionally, the gradient structure can provide both a lateral and vertical gradient.
Abstract translation: 本发明涉及适用于进行高通量大分子分析的纳米流体和微流体组分的界面装置。 衍射梯度光刻（DGL）用于在微流体区域和纳流体区域之间形成梯度界面。 梯度界面面积减小了在纳米流体区域形成的纳米通道的局部熵阻挡。 在一个实施例中，梯度界面区域由横向空间梯度结构形成，用于使从微米到纳米长度尺度的值的横截面变窄。 在另一个实施例中，梯度界面区域由垂直倾斜梯度结构形成。 此外，梯度结构可以提供横向和垂直梯度。
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13.发明授权Process for manufacturing a micromechanical structure having a buried area provided with a filter 有权一种用于与带有滤波器的掩埋区制造微机械结构的方法
公开(公告)号：EP2412665B1
公开(公告)日：2013-06-19
申请号：EP11175428.9
申请日：2011-07-26
Applicant: STMicroelectronics Srl
Inventor： Ferrera, Marco , Perletti, Matteo , Varisco, Igor , Zanotti, Luca
CPC classification number: B81C1/00119 , B01D67/0062 , B01D71/02 , B01D2325/021 , B01D2325/028 , B01L3/502707 , B01L3/502753 , B01L2300/0681 , B81B2201/10 , B81C1/00071 , B81C1/00087 , B81C2201/0133 , B81C2201/0157 , F04B19/006
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14.发明公开GRADIENT STRUCTURES INTERFACING MICROFLUIDICS AND NANOFLUIDICS, METHODS FOR FABRICATION AND USES THEREOF 有权梯度结构作为边界微流体与纳米流体，制造方法和应用
公开(公告)号：EP1572860A4
公开(公告)日：2007-08-01
申请号：EP03751748
申请日：2003-04-16
Applicant: UNIV PRINCETON
Inventor： CAO HAN , TEGENFELDT JONAS , CHOU STEPHEN Y
IPC: G01N37/00 , B01J19/00 , B01L3/00 , B81B1/00 , B82B3/00 , C12M1/00 , C12N15/09 , G03F7/20 , C12M1/34
CPC classification number: G01N21/6486 , B01L3/502707 , B01L3/502715 , B01L3/502746 , B01L3/502761 , B01L2200/027 , B01L2200/0663 , B01L2200/12 , B01L2300/0654 , B01L2300/0896 , B01L2400/0415 , B01L2400/086 , B81B2201/058 , B81C1/00119 , B81C2201/0157 , B81C2201/0159 , B82Y30/00 , G01N33/48721 , G03F7/2008 , Y10T436/143333
Abstract: The present invention relates to a device for interfacing nanofluidic and microfluidic components suitable for use in performing high throughput macromolecular analysis. Diffraction gradient lithography (DGL) is used to form a gradient interface between a microfluidic area and a nanofluidic area. The gradient interface area reduces the local entropic barrier to anochannels formed in the nanofluidic area. In one embodiment, the gradient interface area is formed of lateral spatial gradient structures for narrowing the cross section of a value from the micron to the nanometer length scale. In another embodiment, the gradient interface area is formed of a vertical sloped gradient structure. Additionally, the gradient structure can provide both a lateral and vertical gradient.
Abstract translation: 本发明涉及一种设备，用于接口适用于执行高通量分析大分子使用纳米流体和微流体组件。 衍射梯度光刻（DGL）用于形成微流体区域和纳米流体区之间的梯度界面。 梯度界面面积减小局部熵障碍在纳米流体区域上形成anochannels。 在一个中，实施方式梯度界面区域被用于从微米到纳米尺度缩小的值的横断面形成横向空间梯度结构。 在另一个，本实施例的梯度界面区域中形成垂直梯度倾斜的结构。 此外，梯度结构可以同时提供横向和垂直梯度。
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15.发明授权公开(公告)号：US09177817B2
公开(公告)日：2015-11-03
申请号：US14238547
申请日：2012-08-21
Applicant: John G. Hartley , Ravi K. Bonam
Inventor： John G. Hartley , Ravi K. Bonam
IPC: H01L21/027 , H01L21/308 , G03F7/004 , G03F7/038 , G03F7/039 , G03F7/075 , G03F7/095 , G03F7/20 , G03F7/32 , G03F7/38 , B81C1/00 , H01L29/02
CPC classification number: H01L21/308 , B81C1/00031 , B81C2201/0157 , G03F7/0048 , G03F7/038 , G03F7/039 , G03F7/0755 , G03F7/095 , G03F7/2059 , G03F7/325 , G03F7/38 , G03F7/70416 , H01L21/0277 , H01L29/02
Abstract: A method of fabricating a 3 dimensional structure, includes: forming a stack of at least 2 layers of photo resist material having different photo resist sensitivities upon a substrate; exposing the stack to beams of electromagnetic radiation or charged particles of different dosages to achieve selective solubility along a height of the stack; and dissolving soluble portions of the stack with a solvent to produce a 3 dimensional structure of desired geometry.
Abstract translation: 制造三维结构的方法包括：在基板上形成具有不同抗光敏感性的至少2层光致抗蚀剂材料的叠层; 将所述堆叠暴露于电磁辐射束或不同剂量的带电粒子以实现沿所述堆叠高度的选择性溶解度; 并用溶剂溶解叠层的可溶部分以产生所需几何形状的3维结构。
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Patent Agency Ranking
16.发明申请PROCESS FOR MANUFACTURING A MICROMECHANICAL STRUCTURE HAVING A BURIED AREA PROVIDED WITH A FILTER 审中-公开制造具有过滤器的烧结区域的微观结构的方法公开(公告)号：US20150175410A1
公开(公告)日：2015-06-25
申请号：US14133290
申请日：2013-12-18
Applicant: STMicroelectronics S.r.l.
Inventor： Marco Ferrera , Matteo Perletti , Igor Varisco , Luca Zanotti
IPC: B81C1/00
CPC classification number: B81C1/00119 , B01D67/0062 , B01D71/02 , B01D2325/021 , B01D2325/028 , B01L3/502707 , B01L3/502753 , B01L2300/0681 , B81B2201/10 , B81C1/00071 , B81C1/00087 , B81C2201/0133 , B81C2201/0157 , F04B19/006
Abstract: A process for manufacturing a micromechanical structure envisages: forming a buried cavity within a body of semiconductor material, separated from a top surface of the body by a first surface layer; and forming an access duct for fluid communication between the buried cavity and an external environment. The method envisages: forming an etching mask on the top surface at a first access area; forming a second surface layer on the top surface and on the etching mask; carrying out an etch such as to remove, in a position corresponding to the first access area, a portion of the second surface layer, and an underlying portion of the first surface layer not covered by the etching mask until the buried cavity is reached, thus forming both the first access duct and a filter element, set between the first access duct and the same buried cavity.
Abstract translation: 微机械结构的制造方法设想：在半导体材料体内形成通过第一表面层从主体顶表面分离的掩埋腔; 以及形成用于在所述掩埋腔和外部环境之间流体连通的进入管。 该方法设想：在第一进入区域的顶表面上形成蚀刻掩模; 在顶表面和蚀刻掩模上形成第二表面层; 进行蚀刻，以在对应于第一进入区域的位置中移除第二表面层的一部分，以及未被蚀刻掩模覆盖的第一表面层的下面部分，直到达到掩埋空腔，因此 形成第一进入管道和过滤元件，设置在第一进入管道和相同的掩埋空腔之间。
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17.发明申请公开(公告)号：US20140191375A1
公开(公告)日：2014-07-10
申请号：US14238547
申请日：2012-08-21
Applicant: John G. Hartley , Ravi K. Bonam
Inventor： John G. Hartley , Ravi K. Bonam
IPC: H01L21/308 , H01L29/02
CPC classification number: H01L21/308 , B81C1/00031 , B81C2201/0157 , G03F7/0048 , G03F7/038 , G03F7/039 , G03F7/0755 , G03F7/095 , G03F7/2059 , G03F7/325 , G03F7/38 , G03F7/70416 , H01L21/0277 , H01L29/02
Abstract: A method of fabricating a 3 dimensional structure, includes: forming a stack of at least 2 layers of photo resist material having different photo resist sensitivities upon a substrate; exposing the stack to beams of electromagnetic radiation or charged particles of different dosages to achieve selective solubility along a height of the stack; and dissolving soluble portions of the stack with a solvent to produce a 3 dimensional structure of desired geometry.
Abstract translation: 制造三维结构的方法包括：在基板上形成具有不同抗光敏感性的至少2层光致抗蚀剂材料的叠层; 将所述堆叠暴露于电磁辐射束或不同剂量的带电粒子以实现沿所述堆叠高度的选择性溶解度; 并用溶剂溶解叠层的可溶部分以产生所需几何形状的3维结构。
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18.发明申请Gradient Structures Interfacing Microfluidics and Nanofluidics, Methods for Fabrication and Uses Thereof 有权梯度结构接触微流体和纳米流体，其制作方法和用途公开(公告)号：US20140030811A1
公开(公告)日：2014-01-30
申请号：US13675685
申请日：2012-11-13
Applicant: Princeton University
Inventor： Han Cao , Jonas O. Tegenfeldt , Stephen Chou , Robert H. Austin
IPC: G01N21/64
CPC classification number: G01N21/6486 , B01L3/502707 , B01L3/502715 , B01L3/502746 , B01L3/502761 , B01L2200/027 , B01L2200/0663 , B01L2200/12 , B01L2300/0654 , B01L2300/0896 , B01L2400/0415 , B01L2400/086 , B81B2201/058 , B81C1/00119 , B81C2201/0157 , B81C2201/0159 , B82Y30/00 , G01N33/48721 , G03F7/2008 , Y10T436/143333
Abstract: The present invention relates to a device for interfacing nanofluidic and microfluidic components suitable for use in performing high throughput macromolecular analysis. Diffraction gradient lithography (DGL) is used to form a gradient interface between a microfluidic area and a nanofluidic area. The gradient interface area reduces the local entropic barrier to nanochannels formed in the nanofluidic area. In one embodiment, the gradient interface area is formed of lateral spatial gradient structures for narrowing the cross section of a value from the micron to the nanometer length scale. In another embodiment, the gradient interface area is formed of a vertical sloped gradient structure. Additionally, the gradient structure can provide both a lateral and vertical gradient.
Abstract translation: 本发明涉及适用于进行高通量大分子分析的纳米流体和微流体组分的界面装置。 衍射梯度光刻（DGL）用于在微流体区域和纳流体区域之间形成梯度界面。 梯度界面面积减小了在纳米流体区域形成的纳米通道的局部熵阻挡。 在一个实施例中，梯度界面区域由横向空间梯度结构形成，用于使从微米到纳米长度尺度的值的横截面变窄。 在另一个实施例中，梯度界面区域由垂直倾斜梯度结构形成。 此外，梯度结构可以提供横向和垂直梯度。
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19.发明申请公开(公告)号：US20100244162A1
公开(公告)日：2010-09-30
申请号：US12678903
申请日：2008-09-18
Applicant: Richard Ian Laming , Colin Robert Jenkins , Anthony Bernard Traynor
Inventor： Richard Ian Laming , Colin Robert Jenkins , Anthony Bernard Traynor
IPC: H01L29/84 , H01L21/302
CPC classification number: B81B3/0072 , B81B2201/0257 , B81B2201/0264 , B81B2203/0127 , B81B2203/019 , B81C1/00103 , B81C2201/0108 , B81C2201/0157 , H04R19/005 , H04R19/04
Abstract: A MEMS device comprises a membrane layer and a back-plate layer formed over the membrane layer. The membrane layer comprises an outer portion and an inner portion raised relative to the outer portion and a sidewall for connecting the inner portion and the outer portion. The sidewall is non-orthogonal to the outer portion.
Abstract translation: MEMS器件包括膜层和形成在膜层上的背板层。 膜层包括外部部分和相对于外部部分凸起的内部部分和用于连接内部部分和外部部分的侧壁。 侧壁与外部部分不正交。
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20.发明申请GRADIENT STRUCTURES INTERFACING MICROFLUIDICS AND NANOFLUIDICS, METHODS FOR FABRICATION AND USES THEREOF 有权接触微流控和纳米级的梯度结构，其制造方法及其用途公开(公告)号：US20070020772A1
公开(公告)日：2007-01-25
申请号：US11536178
申请日：2006-09-28
Applicant: Han Cao , Jonas Tegenfeldt , Stephen Chou , Robert Austin
Inventor： Han Cao , Jonas Tegenfeldt , Stephen Chou , Robert Austin
IPC: H01L21/00
CPC classification number: G01N21/6486 , B01L3/502707 , B01L3/502715 , B01L3/502746 , B01L3/502761 , B01L2200/027 , B01L2200/0663 , B01L2200/12 , B01L2300/0654 , B01L2300/0896 , B01L2400/0415 , B01L2400/086 , B81B2201/058 , B81C1/00119 , B81C2201/0157 , B81C2201/0159 , B82Y30/00 , G01N33/48721 , G03F7/2008 , Y10T436/143333
Abstract: The present invention relates to a device for interfacing nanofluidic and microfluidic components suitable for use in performing high throughput macromolecular analysis. Diffraction gradient lithography (DGL) is used to form a gradient interface between a microfluidic area and a nanofluidic area. The gradient interface area reduces the local entropic barrier to nanochannels formed in the nanofluidic area. In one embodiment, the gradient interface area is formed of lateral spatial gradient structures for narrowing the cross section of a value from the micron to the nanometer length scale. In another embodiment, the gradient interface area is formed of a vertical sloped gradient structure. Additionally, the gradient structure can provide both a lateral and vertical gradient.
Abstract translation: 本发明涉及适用于进行高通量大分子分析的纳米流体和微流体组分的界面装置。 衍射梯度光刻（DGL）用于在微流体区域和纳流体区域之间形成梯度界面。 梯度界面面积减小了在纳米流体区域形成的纳米通道的局部熵阻挡。 在一个实施例中，梯度界面区域由横向空间梯度结构形成，用于使从微米到纳米长度尺度的值的横截面变窄。 在另一个实施例中，梯度界面区域由垂直倾斜梯度结构形成。 此外，梯度结构可以提供横向和垂直梯度。
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