Abstract:
A method of utilizing error detecting and correcting circuitry (56) to detect and correct errors which can occur in data stored in multi-bit cell format in a flash EEPROM memory array (23) before those errors can affect the accuracy of data provided by a flash EEPROM memory array.
Abstract:
A method and apparatus for detecting errors in data output from memory and a device failure in the memory. In the invention, a check code is generated based on data to be input to the memory. The check code is valid when equal to zero. The check code is inverted and input along with the data as a codeword to the memory in response to a write command. The codeword is output from the memory in response to a read command. The codeword output from memory indicates whether a device in memory has failed. The inverted check code included in the codeword output from memory is re-inverted. Information indicating whether the data included in the codeword output from memory includes an error is generated based on the data and the codeword including the check code.
Abstract:
A method and apparatus for detecting errors in data output from memory and a device failure in the memory. In the invention, a check code is generated based on data to be input to the memory. The check code is valid when equal to zero. The check code is inverted and input along with the data as a codeword to the memory in response to a write command. The codeword is output from the memory in response to a read command. The codeword output from memory indicates whether a device in memory has failed. The inverted check code included in the codeword output from memory is re-inverted. Information indicating whether the data included in the codeword output from memory includes an error is generated based on the data and the codeword including the check code.
Abstract:
A method of utilizing error detecting and correcting circuitry (56) to detect and correct errors which can occur in data stored in multi-bit cell format in a flash EEPROM memory array (23) before those errors can affect the accuracy of data provided by a flash EEPROM memory array.
Abstract:
A method and apparatus for detecting errors in data output from memory and a device failure in the memory. In the invention, a check code is generated based on data to be input to the memory. The check code is valid when equal to zero. The check code is inverted and input along with the data as a codeword to the memory in response to a write command. The codeword is output from the memory in response to a read command. The codeword output from memory indicates whether a device in memory has failed. The inverted check code included in the codeword output from memory is re-inverted. Information indicating whether the data included in the codeword output from memory includes an error is generated based on the data and the codeword including the check code.
Abstract:
A method of utilizing error detecting and correcting circuitry (56) to detect and correct errors which can occur in data stored in multi-bit cell format in a flash EEPROM memory array (23) before those errors can affect the accuracy of data provided by a flash EEPROM memory array.
Abstract:
The control unit detects the errors concurrently with normal microinstruction execution through suitable internal checking circuits and a determined microinstruction allocation in the memory. Microinstructions comprise additional field (CS, FS) carrying the encoding, in modified Berger code, of the allocation address of the microinstruction itself and of the following one; the microinstructions of destination itself and of the following one; the microinstructions of destination of conditional jumps are allocated so that their codes are related to each other by simple logic relationships which are then reproduced by an internal circuit (CSM); the two fields, the one of the next microinstruction being duly delayed, are then compared and possible differences detect unidirectional and incorrect sequencing errors. The other errors are detected through particular implementations of some internal circuits (STK1, INC1) and duplication of others (RCT, SEL).
Abstract:
A method and apparatus for detecting errors in data output from memory and a device failure in the memory. In the invention, a check code is generated based on data to be input to the memory. The check code is valid when equal to zero. The check code is inverted and input along with the data as a codeword to the memory in response to a write command. The codeword is output from the memory in response to a read command. The codeword output from memory indicates whether a device in memory has failed. The inverted check code included in the codeword output from memory is re-inverted. Information indicating whether the data included in the codeword output from memory includes an error is generated based on the data and the codeword including the check code.
Abstract:
A method of utilizing error detecting and correcting circuitry (56) to detect and correct errors which can occur in data stored in multi-bit cell format in a flash EEPROM memory array (23) before those errors can affect the accuracy of data provided by a flash EEPROM memory array.
Abstract:
A totally self-checking memory cell array apparatus (30) has an array (31)of memory cells (32) selectively addressed by row and column decoders (33, 35) which receive unidirectional error detecting code signals as address inputs (34,36). Data, as a multiple bit data word (A, B, C₁, C₂), is stored in the array (31) in unidirectional error detecting code form. Cells in each row (1-8) of the array have two separate row select connection lines (45 and 45a) for coupling the cell to data and data complement (46, 46*) connections. Error detection circuits (44, 47) are provided which determine errors by comparing the data and data complement lines for each data bit read out of the array and for detecting when multiple bit data words read out of the array are not coded in a unidirectional error detecting code format. The above apparatus provides error indications in case of any unidirectional errors in the row or column input address signals or the row or column decoders, or any unidirectional error corruption of the data stored in the memory cell array. This is achieved without completely duplicating each memory cell in the array and all row and column decoder circuitry.