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    Electron emitter
    12.
    发明授权
    Electron emitter 有权
    电子发射体

    公开(公告)号：US07576479B2

    公开(公告)日：2009-08-18

    申请号：US11673769

    申请日：2007-02-12

    Applicant: Kei Sato ,  Tetsuya Hattori ,  Hirofumi Yamaguchi ,  Shuichi Ozawa

    Inventor： Kei Sato ,  Tetsuya Hattori ,  Hirofumi Yamaguchi ,  Shuichi Ozawa

    IPC: H01J1/14 ,  H01J1/05

    CPC classification number: H01J1/312 ,  B82Y10/00 ,  H01J1/30 ,  H01J2201/306 ,  H01J2201/312

    Abstract: Provided is a piezoelectric-film-type electron emitter of high durability exhibiting suppressed reduction in electron emission quantity, which reduction would otherwise occur with repeated use of the electron emitter. The electron emitter includes a substrate, a lower electrode, an emitter layer, and an upper electrode. The upper electrode has a plurality of openings, and an emitter section located on the top surface of the emitter layer is exposed through the openings to a reduced-pressure atmosphere. The electron emitter is configured so that when a pulse drive voltage Va is applied between the lower electrode and the upper electrode, electrons are accumulated on the emitter section, and then the electrons are emitted toward the reduced-pressure atmosphere. The emitter layer contains a primary component (i.e., a ferroelectric composition) and an additional component. The additional component contains a transition metal oxide of high oxidation number which can serve as an oxidizing agent by being converted into an oxide of the transition metal of lower oxidation number.

    Abstract translation: 提供了一种具有高耐久性的压电薄膜型电子发射体，其显示出抑制电子发射量的减少，但是通过反复使用电子发射器将会发生减小。 电子发射器包括衬底，下电极，发射极层和上电极。 上电极具有多个开口，并且位于发射极层的顶表面上的发射极部分通过开口暴露于减压气氛。 电子发射器被配置为使得当在下电极和上电极之间施加脉冲驱动电压Va时，电子在发射极部分积聚，然后电子朝向减压气氛发射。 发射极层包含主要组分（即铁电组合物）和附加组分。 附加成分含有高氧化数的过渡金属氧化物，其可以通过转化为较低氧化数的过渡金属的氧化物而用作氧化剂。

    SURFACE EMISSION TYPE ELECTRON SOURCE AND DRAWING DEVICE
    13.
    发明授权
    SURFACE EMISSION TYPE ELECTRON SOURCE AND DRAWING DEVICE 有权
    表面发射电子源牵伸装置

    公开(公告)号：EP2141725B1

    公开(公告)日：2011-10-26

    申请号：EP08740791.2

    申请日：2008-04-23

    Applicant: CRESTEC CORPORATION

    Inventor： KOJIMA, Akira ,  OHYI, Hideyuki

    IPC: H01J1/312 ,  H01J3/14 ,  H01J37/305 ,  H01L21/027 ,  H01J37/073

    CPC classification number: H01J37/073 ,  B82Y10/00 ,  B82Y40/00 ,  H01J1/312 ,  H01J37/06 ,  H01J37/3174 ,  H01J2201/312 ,  H01J2237/0635

    Abstract: A surface emission type electron source comprises a planar first electrode, a planar second electrode provided in opposition to the first electrode, an electron passage layer provided between the first electrode and the second electrode, and a power section for applying voltage to the second electrode and the first electrode. In the electron passage layer, a plurality of quantum wires extending in a first direction heading for the second electrode from the first electrode are provided with a predetermined gap therebetween. Electrons are emitted from the surface of the second electrode. The quantum wire is composed of silicon. In the quantum wire, a plurality of portions whose thickness is thin are formed with a predetermined gap therebetween in the first direction.

    Electron emitter
    14.
    发明公开
    Electron emitter 有权
    电子发射

    公开(公告)号：EP1826798A3

    公开(公告)日：2009-11-11

    申请号：EP07250608.2

    申请日：2007-02-14

    Applicant: NGK INSULATORS, LTD.

    Inventor： Sato, Kei, Legal Affairs and I.P. Dept. ,  Hattori, Tetsuya, Legal Affairs and I.P. Dept. ,  Yamaguchi, Hirofumi, Legal Affairs and I.P. Dept. ,  Ozawa, Shuichi, Legal Affairs and I.P. Dept.

    IPC: H01J1/312 ,  H01J1/30

    CPC classification number: H01J1/312 ,  B82Y10/00 ,  H01J1/30 ,  H01J2201/306 ,  H01J2201/312

    Abstract: Provided is a piezoelectric-film-type electron emitter of high durability exhibiting suppressed reduction in electron emission quantity, which reduction would otherwise occur with repeated use of the electron emitter. The electron emitter includes a substrate, a lower electrode, an emitter layer, and an upper electrode. The upper electrode has a plurality of openings, and an emitter section located on the top surface of the emitter layer is exposed through the openings to a reduced-pressure atmosphere. The electron emitter is configured so that when a pulse drive voltage Va is applied between the lower electrode and the upper electrode, electrons are accumulated on the emitter section, and then the electrons are emitted toward the reduced-pressure atmosphere. The emitter layer contains a primary component (i.e., a ferroelectric composition) and an additional component. The additional component contains a transition metal oxide of high oxidation number which can serve as an oxidizing agent by being converted into an oxide of the transition metal of lower oxidation number.

    SURFACE EMISSION TYPE ELECTRON SOURCE AND DRAWING DEVICE
    18.
    发明公开
    SURFACE EMISSION TYPE ELECTRON SOURCE AND DRAWING DEVICE 有权
    兴奋剂化学品 - 兴奋剂

    公开(公告)号：EP2141725A1

    公开(公告)日：2010-01-06

    申请号：EP08740791.2

    申请日：2008-04-23

    Applicant: CRESTEC CORPORATION

    Inventor： KOJIMA, Akira ,  OHYI, Hideyuki

    IPC: H01J1/312 ,  H01J3/14 ,  H01J37/305 ,  H01L21/027 ,  H01J37/073

    CPC classification number: H01J37/073 ,  B82Y10/00 ,  B82Y40/00 ,  H01J1/312 ,  H01J37/06 ,  H01J37/3174 ,  H01J2201/312 ,  H01J2237/0635

    Abstract: A surface emission type electron source according to the present invention includes a first electrode having a planar form; a second electrode having a planar form facing the first electrode; an electron passage layer disposed between the first electrode and the second electrode; and a power source part configured to apply a voltage to the second electrode and the first electrode. The electron passage layer includes plural quantum wires extending in a first direction from the first electrode to the second electrode. The quantum wires are spaced apart from each other at predetermined intervals, and electrons are emitted from a front surface of the second electrode. The quantum wires are made of silicon, and each of the quantum wires has plural thin parts having small thicknesses formed at predetermined intervals along the first direction.

    Abstract translation: 根据本发明的表面发射型电子源包括具有平面形式的第一电极; 具有面向所述第一电极的平面形状的第二电极; 设置在第一电极和第二电极之间的电子通过层; 以及电源部，被配置为向所述第二电极和所述第一电极施加电压。 电子通过层包括从第一电极延伸到第二电极的第一方向上的多个量子线。 量子线以预定间隔彼此隔开，电子从第二电极的前表面发射。 量子线由硅制成，并且每个量子线具有沿着第一方向以预定间隔形成的具有小厚度的多个薄部。

    ELECTRONIC DEVICE AND METHOD FOR MANUFACTURING SAME
    19.
    发明公开
    ELECTRONIC DEVICE AND METHOD FOR MANUFACTURING SAME 审中-公开
    电子装置及其制造方法

    公开(公告)号：EP2555218A1

    公开(公告)日：2013-02-06

    申请号：EP11765759.3

    申请日：2011-03-31

    Applicant: Panasonic Corporation

    Inventor： ICHIHARA, Tsutomu ,  TSUBAKI, Kenji ,  KUBO, Masao ,  KOSHIDA, Nobuyoshi

    IPC: H01J1/312 ,  H01J9/02 ,  H01L33/16

    CPC classification number: H01J9/025 ,  B82Y10/00 ,  H01J1/312 ,  H01J2201/312

    Abstract: The electronic device includes a substrate, a first electrode formed over a surface of the substrate, a second electrode located on an opposite side of the first electrode from the substrate so as to face the first electrode, and a functional layer interposed between the first electrode and second electrode and formed by means of anodizing a first polycrystalline semiconductor layer in an electrolysis solution so as to contain a plurality of semiconductor nanocrystals. The electronic device further includes a second polycrystalline semiconductor layer interposed between the first electrode and the functional layer so as to be in close contact with the functional layer. The second polycrystalline semiconductor layer has an anodic oxidization rate in the electrolysis solution lower than that of the first polycrystalline semiconductor layer so as to function as a stop layer for exclusively anodizing the first polycrystalline semiconductor layer.

    Abstract translation: 该电子器件包括：衬底;第一电极，形成在衬底的表面之上;第二电极，位于第一电极的与衬底相对的一侧以面对第一电极;以及功能层，介于第一电极 和第二电极，并且通过在电解溶液中阳极氧化第一多晶半导体层以包含多个半导体纳米晶体而形成。 所述电子器件还包括第二多晶半导体层，所述第二多晶半导体层介于所述第一电极和所述功能层之间以便与所述功能层紧密接触。 第二多晶半导体层在电解液中的阳极氧化速率低于第一多晶半导体层的阳极氧化速率，以用作专门阳极氧化第一多晶半导体层的停止层。

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