Abstract:
An x-ray generator includes a housing, a cathode block that is arranged in the housing and emits electrons via a field emission scheme, an anode block that is arranged in the housing and generates x-rays in response to the electrons emitted from the cathode block and collide with the anode block, and a heat sink block that contacts the cathode block and dissipates heat generated therein to an outside of the housing.
Abstract:
A field emission cathode plate is disclosed, which includes: a substrate; a cathode layer, disposed on the substrate; a conductive layer with an arc surface or a resistor layer with an opening and resistivity larger than that of the cathode layer, disposed on the cathode layer; and a cambered field emission layer, having an arc surface and disposed on the conductive layer or on the cathode layer in the opening of the resistor layer and covering the resistor layer around the opening. The present invention also provides a method for fabricating the above-mentioned field emission cathode plate. The method can provide field emission cathode plate achieving uniform field emission and does not involve high resolution and cost.
Abstract:
An electron emission device includes: a substrate; a cathode on the substrate; one or more electron emission regions electrically connected with the cathode; an insulation layer between the cathode and a gate electrode formed on the insulation layer; and a resistance layer electrically connected to the cathode and the one or more electron emission regions. Here, the resistance layer includes a boron nitride-based material.
Abstract:
A method for minimizing fabrication defects in ballast contact to a conductor in monolithically integrated semiconductor devices includes forming a sloping sidewall (318, 424) in both an insulating layer (106, 718) overlying a conductive layer (104, 714) by etching with a an RF biased fluorine based chemistry and an RF biased chlorine based chemistry, respectively, as defined by a single resist layer (108) having a sloped sidewall (212). A ballast layer (526, 726) is deposited on the structure (100, 700) and metal contacts (632, 634, 636, 638, 722) are disposed on the ballast layer (526, 722).
Abstract:
A method for making a field emission cathode structure includes forming a ballast layer over a column metal layer, forming a dielectric layer over the ballast layer, forming a line metal layer over the dielectric layer, forming a trench in the line metal layer and the dielectric layer, the trench extending to the ballast layer, and forming a sidewall spacer and a sidewall blade adjacent a sidewall of the trench, where the sidewall spacer is between the dielectric layer and the sidewall blade, and where the conformal spacer is recessed as compared to the sidewall blade such that a gap is present between the sidewall blade and the line metal layer.
Abstract:
PROBLEM TO BE SOLVED: To provide an image display apparatus for preventing a discharge current from flowing into a gate conductor and also capable of reducing the variety in electron emission characteristic. SOLUTION: The image display apparatus includes a plurality of electron emitting devices having an electron emitting portion provided between a cathode electrode and a gate electrode; a cathode wiring connected to the cathode electrode; and a gate wiring connected to the gate electrode and having a resistance higher than the resistance of the cathode wiring, wherein an impedance element having a resistance value of Ry and an electrostatic capacitance of Cy is connected to between the cathode wiring and the cathode electrode, a resistive element having a resistance value of Rx is connected to between the gate wiring and the gate electrode, and ¾Ry/(1+jωRyCy)¾ Rx are satisfied, where ω is 100 MHz. COPYRIGHT: (C)2011,JPO&INPIT
Abstract:
A light emitting apparatus (10) includes a plurality of light emitting devices (1) including luminous bodies, and a plurality of resistors (2) made of the same material having negative resistance - temperature characteristics, the plurality of resistors being connected respectively in series to the plurality of light emitting devices. When the plurality of resisters are at the same temperature, one or ones among the plurality of resistors, which exhibit higher temperatures during driving, have larger resistance values than other among the plurality of resistors, which exhibit lower temperatures during the driving.
Abstract:
Under-gate field emission triode devices, and cathode assemblies for use therein, contain a charge dissipation layer (6.11). The charge dissipation layer may be located under or over the cathode electrode (6.4), (6.5), and/or electron field emitter (6.6).
Abstract:
A light emitting apparatus (10) includes a plurality of light emitting devices (1) including luminous bodies, and a plurality of resistors (2) made of the same material having negative resistance - temperature characteristics, the plurality of resistors being connected respectively in series to the plurality of light emitting devices. When the plurality of resisters are at the same temperature, one or ones among the plurality of resistors, which exhibit higher temperatures during driving, have larger resistance values than other among the plurality of resistors, which exhibit lower temperatures during the driving.
Abstract:
Under-gate field emission triode devices, and cathode assemblies for use therein, contain a charge dissipation layer (6.11). The charge dissipation layer may be located under or over the cathode electrode (6.4), (6.5), and/or electron field emitter (6.6).