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公开(公告)号：CN103531422A
公开(公告)日：2014-01-22
申请号：CN201310187294.9
申请日：2013-05-20
Applicant: 三星电子株式会社
CPC classification number: H01J19/24 , B82Y99/00 , H01J1/02 , H01J3/021 , H01J9/02 , H01J31/127 , H01J35/06 , H01J35/065 , H01J63/02 , H01J63/06 , H01J2203/0208 , H01J2235/062 , H01J2235/068 , H01J2329/4608 , Y10S977/939
Abstract: 本发明提供了一种网状电极附接结构、一种电子发射器件以及包括该电子发射器件的电子装置。该网状电极附接结构包括：基板，具有至少一个开口；粘附层，设置在基板上；以及网状电极，设置在基板上，粘附层在网状电极和基板之间，其中网状电极具有与至少一个开口所位于的区域相应的网状区域以及接触粘附层的粘附区域，粘附区域包括暴露粘附层的一部分的至少一个结合凹槽。这样的网状电极附接区域应用于电子发射器件的栅电极使得栅电极稳定地附接到绝缘层。
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公开(公告)号：CN103531422B
公开(公告)日：2017-05-31
申请号：CN201310187294.9
申请日：2013-05-20
Applicant: 三星电子株式会社
CPC classification number: H01J19/24 , B82Y99/00 , H01J1/02 , H01J3/021 , H01J9/02 , H01J31/127 , H01J35/06 , H01J35/065 , H01J63/02 , H01J63/06 , H01J2203/0208 , H01J2235/062 , H01J2235/068 , H01J2329/4608 , Y10S977/939
Abstract: 本发明提供了一种网状电极附接结构、一种电子发射器件以及包括该电子发射器件的电子装置。该网状电极附接结构包括：基板，具有至少一个开口；粘附层，设置在基板上；以及网状电极，设置在基板上，粘附层在网状电极和基板之间，其中网状电极具有与至少一个开口所位于的区域相应的网状区域以及接触粘附层的粘附区域，粘附区域包括暴露粘附层的一部分的至少一个结合凹槽。这样的网状电极附接区域应用于电子发射器件的栅电极使得栅电极稳定地附接到绝缘层。
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公开(公告)号：US09024544B2
公开(公告)日：2015-05-05
申请号：US13509537
申请日：2010-11-10
Applicant: Masayoshi Nagao , Tomoya Yoshida , Yoichiro Neo
Inventor： Masayoshi Nagao , Tomoya Yoshida , Yoichiro Neo
CPC classification number: H01J3/022 , H01J31/127 , H01J2203/0208 , H01J2203/0228 , H01J2329/4604 , H01J2329/4626
Abstract: In a field emission device, the fundamental cause of spherical aberration in an emitted electron beam trajectory is eliminated or mitigated. An aberration suppressor electrode 31 is provided at a lower vertical position than an extraction gate electrode 13 so its opening inner peripheral edge 31e faces a position near an emitter tip 11tp. The vertical position of the opening inner peripheral edge 31e of the aberration suppressor electrode 31 is made lower than the vertical position of the emitter tip 11tp. An aberration suppressing voltage Vsp is applied to the aberration suppressor electrode 31 that is a lower voltage than the potential of the emitter 11 and controls equipotential lines near the emitter tip 11tp to make them parallel.
Abstract translation: 在场发射器件中，消除或减轻发射的电子束轨迹中球面像差的根本原因。 在比提取栅电极13低的垂直位置处设置像差抑制电极31，使得其开口内周边缘31e面向发射极尖端11tp附近的位置。 使像差抑制电极31的开口内周缘31e的垂直位置比发射极尖端11tp的垂直位置低。 像差抑制电压Vsp被施加到比发射极11的电位低的电压的像差抑制电极31，并且控制发射极尖端11tp附近的等电位线使其平行。
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4.发明授权Mesh electrode adhesion structure, electron emission device and electronic apparatus including the electron emission device 有权网状电极粘附结构，电子发射装置和包括电子发射装置的电子装置公开(公告)号：US08938049B2
公开(公告)日：2015-01-20
申请号：US13893519
申请日：2013-05-14
Applicant: Samsung Electronics Co., Ltd.
Inventor： Do-yoon Kim , Yong-chul Kim , Il-hwan Kim , Shang-hyeun Park , Tae-won Jeong
IPC: H01J35/06 , H01J29/50 , H01J19/24 , H01J1/02 , H01J3/02 , H01J31/12 , H01J63/02 , H01J9/02 , H01J63/06 , B82Y99/00
CPC classification number: H01J19/24 , B82Y99/00 , H01J1/02 , H01J3/021 , H01J9/02 , H01J31/127 , H01J35/06 , H01J35/065 , H01J63/02 , H01J63/06 , H01J2203/0208 , H01J2235/062 , H01J2235/068 , H01J2329/4608 , Y10S977/939
Abstract: A mesh electrode adhesion structure includes: a substrate, and an opening defined in the substrate; a mesh electrode on the substrate, and a first combination groove defined in the mesh electrode; and an adhesion layer between the substrate and the mesh electrode. The mesh electrode includes: a mesh region corresponding to the opening defined in the substrate, and an adhesion region in which the first combination groove exposes the adhesion layer.
Abstract translation: 网状电极粘合结构包括：基板和限定在基板中的开口; 基板上的网状电极以及限定在网状电极中的第一组合槽; 以及基板和网状电极之间的粘附层。 网状电极包括：对应于在基板中限定的开口的网格区域，以及第一组合凹槽暴露粘合层的粘合区域。
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公开(公告)号：US09508522B2
公开(公告)日：2016-11-29
申请号：US14207216
申请日：2014-03-12
Applicant: Samsung Electronics Co., Ltd. , SRI INTERNATIONAL
Inventor： Shang-hyeun Park , Paul R. Schwoebel , Il-hwan Kim , Do-yoon Kim , Yong-chul Kim , Chang-soo Lee , Tae-won Jeong
IPC: H01J35/06 , H01J35/04 , H01J19/44 , H01J3/02 , H01J3/38 , H01J1/30 , H01J1/90 , A61B6/00 , H01J1/304 , H01J19/24 , H01J19/42 , B82Y30/00
CPC classification number: H01J35/065 , A61B6/40 , A61B6/4064 , A61B6/4488 , B82Y30/00 , H01J1/304 , H01J1/90 , H01J3/021 , H01J3/38 , H01J19/24 , H01J19/42 , H01J19/44 , H01J35/045 , H01J35/06 , H01J2201/304 , H01J2201/30469 , H01J2201/3195 , H01J2203/0204 , H01J2203/0208 , H01J2203/0212 , H01J2203/0216 , H01J2203/0236 , H01J2235/06 , H01J2235/1212 , H01J2235/1291 , H01J2235/1295 , Y10S977/742 , Y10S977/939 , Y10S977/95
Abstract: An x-ray generator includes a housing, a cathode block that is arranged in the housing and emits electrons via a field emission scheme, an anode block that is arranged in the housing and generates x-rays in response to the electrons emitted from the cathode block and collide with the anode block, and a heat sink block that contacts the cathode block and dissipates heat generated therein to an outside of the housing.
Abstract translation: X射线发生器包括壳体，阴极块，其布置在壳体中并经由场致发射方案发射电子;阳极块，布置在壳体中并响应于从阴极发射的电子产生X射线 阻挡并与阳极块碰撞，以及散热块，其接触阴极块并将其中产生的热量散发到壳体的外部。
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Patent Agency Ranking
公开(公告)号：US20120229051A1
公开(公告)日：2012-09-13
申请号：US13509537
申请日：2010-11-10
Applicant: Masayoshi Nagao , Tomoya Yoshida , Yoichiro Neo
Inventor： Masayoshi Nagao , Tomoya Yoshida , Yoichiro Neo
IPC: H01J29/46
CPC classification number: H01J3/022 , H01J31/127 , H01J2203/0208 , H01J2203/0228 , H01J2329/4604 , H01J2329/4626
Abstract: In a field emission device, the fundamental cause of spherical aberration in an emitted electron beam trajectory is eliminated or mitigated. An aberration suppressor electrode 31 is provided at a lower vertical position than an extraction gate electrode 13 so its opening inner peripheral edge 31e faces a position near an emitter tip 11tp. The vertical position of the opening inner peripheral edge 31e of the aberration suppressor electrode 31 is made lower than the vertical position of the emitter tip 11tp. An aberration suppressing voltage Vsp is applied to the aberration suppressor electrode 31 that is a lower voltage than the potential of the emitter 11 and controls equipotential lines near the emitter tip 11tp to make them parallel.
Abstract translation: 在场发射器件中，消除或减轻发射的电子束轨迹中球面像差的根本原因。 在比提取栅电极13低的垂直位置处设置像差抑制电极31，使得其开口内周边缘31e面向发射极尖端11tp附近的位置。 使像差抑制电极31的开口内周缘31e的垂直位置比发射极尖端11tp的垂直位置低。 像差抑制电压Vsp被施加到比发射极11的电位低的电压的像差抑制电极31，并且控制发射极尖端11tp附近的等电位线使其平行。
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公开(公告)号：US20140270087A1
公开(公告)日：2014-09-18
申请号：US14207216
申请日：2014-03-12
Applicant: SRI INTERNATIONAL , Samsung Electronics Co., Ltd.
Inventor： Shang-hyeun PARK , Paul R. SCHWOEBEL , Il-hwan KIM , Do-yoon KIM , Yong-chul KIM , Chang-soo LEE , Tae-won JEONG
IPC: H01J35/06
CPC classification number: H01J35/065 , A61B6/40 , A61B6/4064 , A61B6/4488 , B82Y30/00 , H01J1/304 , H01J1/90 , H01J3/021 , H01J3/38 , H01J19/24 , H01J19/42 , H01J19/44 , H01J35/045 , H01J35/06 , H01J2201/304 , H01J2201/30469 , H01J2201/3195 , H01J2203/0204 , H01J2203/0208 , H01J2203/0212 , H01J2203/0216 , H01J2203/0236 , H01J2235/06 , H01J2235/1212 , H01J2235/1291 , H01J2235/1295 , Y10S977/742 , Y10S977/939 , Y10S977/95
Abstract: An x-ray generator includes a housing, a cathode block that is arranged in the housing and emits electrons via a field emission scheme, an anode block that is arranged in the housing and generates x-rays in response to the electrons emitted from the cathode block and collide with the anode block, and a heat sink block that contacts the cathode block and dissipates heat generated therein to an outside of the housing.
Abstract translation: X射线发生器包括壳体，阴极块，其布置在壳体中并经由场致发射方案发射电子;阳极块，布置在壳体中并响应于从阴极发射的电子产生X射线 阻挡并与阳极块碰撞，以及散热块，其接触阴极块并将其中产生的热量散发到壳体的外部。
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8.发明申请MESH ELECTRODE ADHESION STRUCTURE, ELECTRON EMISSION DEVICE AND ELECTRONIC APPARATUS INCLUDING THE ELECTRON EMISSION DEVICE 有权MESH电极粘合结构，电子发射装置和包括电子发射装置的电子装置公开(公告)号：US20140010347A1
公开(公告)日：2014-01-09
申请号：US13893519
申请日：2013-05-14
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Do-yoon KIM , Yong-chul KIM , Il-hwan KIM , Shang-hyeun PARK , Tae-won JEONG
CPC classification number: H01J19/24 , B82Y99/00 , H01J1/02 , H01J3/021 , H01J9/02 , H01J31/127 , H01J35/06 , H01J35/065 , H01J63/02 , H01J63/06 , H01J2203/0208 , H01J2235/062 , H01J2235/068 , H01J2329/4608 , Y10S977/939
Abstract: A mesh electrode adhesion structure includes: a substrate, and an opening defined in the substrate; a mesh electrode on the substrate, and a first combination groove defined in the mesh electrode; and an adhesion layer between the substrate and the mesh electrode. The mesh electrode includes: a mesh region corresponding to the opening defined in the substrate, and an adhesion region in which the first combination groove exposes the adhesion layer.
Abstract translation: 网状电极粘合结构包括：基板和限定在基板中的开口; 基板上的网状电极以及限定在网状电极中的第一组合槽; 以及基板和网状电极之间的粘附层。 网状电极包括：对应于在基板中限定的开口的网格区域，以及第一组合凹槽暴露粘合层的粘合区域。
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9.发明公开Mesh electrode adhesion structure, electron emission device and electronic apparatus including the electron emission device 审中-公开Netzelektrodenhaftstruktur，Elektronenemissionsvorrichtung und elektronische Vorrichtung mit dieser Elektronenemissionsvorrichtung
公开(公告)号：EP2682977A2
公开(公告)日：2014-01-08
申请号：EP13169180.0
申请日：2013-05-24
Applicant: Samsung Electronics Co., Ltd
Inventor： Kim, Do-yoon , Kim, Yong-chul , Kim, Il-hwan , Park, Shang-hyeun , Jeong, Tae-won
IPC: H01J35/06
CPC classification number: H01J19/24 , B82Y99/00 , H01J1/02 , H01J3/021 , H01J9/02 , H01J31/127 , H01J35/06 , H01J35/065 , H01J63/02 , H01J63/06 , H01J2203/0208 , H01J2235/062 , H01J2235/068 , H01J2329/4608 , Y10S977/939
Abstract: A mesh electrode adhesion structure includes: a substrate (130), and an opening defined in the substrate; a mesh electrode (150) on the substrate, and a first combination groove (160) defined in the mesh electrode; and an adhesion layer (140) between the substrate and the mesh electrode. The mesh electrode includes: a mesh region corresponding to the opening defined in the substrate, and an adhesion region in which the first combination groove exposes the adhesion layer.
Abstract translation: 网状电极粘合结构包括：基板（130）和限定在基板中的开口; 在所述基板上的网状电极（150）和限定在所述网状电极中的第一组合槽（160） 以及在所述基板和所述网状电极之间的粘附层（140）。 网状电极包括：对应于在基板中限定的开口的网格区域，以及粘合区域，第一组合凹槽暴露粘合层。
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公开(公告)号：EP2500926A4
公开(公告)日：2013-04-10
申请号：EP10830059
申请日：2010-11-10
Applicant: UNIV SHIZUOKA NAT UNIV CORP
Inventor： NAGAO MASAYOSHI , YOSHIDA TOMOYA , NEO YOICHIRO
IPC: H01J3/02
CPC classification number: H01J3/022 , H01J31/127 , H01J2203/0208 , H01J2203/0228 , H01J2329/4604 , H01J2329/4626
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