公开(公告)号：KR1020020069729A

公开(公告)日：2002-09-05

申请号：KR1020010010094

申请日：2001-02-27

Applicant: 한국과학기술연구원

Inventor： 김대신 ,  이석 ,  강병권 ,  박윤호 ,  우덕하 ,  김재헌 ,  김선호

IPC: H01S3/136

Abstract: PURPOSE: A horizontal coupled type laser diode is provided to widen a variable wavelength range by using two active elements having different propagation constants. CONSTITUTION: A horizontal coupled type laser diode is formed by coupling horizontally the first resonator including a laser diode(100) with the second resonator including an optical amplifier(200). The optical amplifier(200) has a propagation constant which is different from the laser diode(100). The first electrode(110) and the second electrode(210) are installed in an upper end portion and a lower end portion of the laser diode(100) in order to apply current to the laser diode(100) and the optical amplifier(200), respectively. Active layers of the laser diode(100) and the optical amplifier(200) are formed by InGaAsP of a multiple quantum well structures.

Abstract translation: 目的：提供水平耦合型激光二极管，通过使用具有不同传播常数的两个有源元件来加宽可变波长范围。 构成：通过将包括激光二极管（100）的第一谐振器与包括光放大器（200）的第二谐振器水平耦合而形成水平耦合型激光二极管。 光放大器（200）具有与激光二极管（100）不同的传播常数。 为了向激光二极管（100）和光放大器（200）施加电流，第一电极（110）和第二电极（210）安装在激光二极管（100）的上端部和下端部分 ）， 分别。 激光二极管（100）和光放大器（200）的有源层由多量子阱结构的InGaAsP形成。

公开(公告)号：KR1020020060523A

公开(公告)日：2002-07-18

申请号：KR1020010001650

申请日：2001-01-11

Applicant: 한국과학기술연구원

Inventor： 김대신 ,  이석 ,  강병권 ,  박윤호 ,  우덕하 ,  김재헌 ,  김선호

IPC: G02B6/293

Abstract: PURPOSE: A method for implementing an electro-optic wavelength convertor by using a horizontal coupling of semiconductor laser and a semiconductor optical amplifier is provided to secure a wide range of input power since the method does not need a conventional Mach-Zender interferometer structure, thereby utilizing a characteristics of a conventional semiconductor laser such as a variable wavelength laser diode. CONSTITUTION: A method for implementing an electro-optic wavelength convertor by using a horizontal coupling of semiconductor laser and a semiconductor optical amplifier includes steps of etching end portions(100a,100b) of at least one of a first and a second waveguides(100,200), anti-reflection coating the end portions(100a,100b) and dividing the first and the second waveguides(100,200) by cleaving to thereby obtain a divided reflection surface and a divided anti-reflection surface, respectively. An active laser provided thereon with the first and the second waveguides(100,200) utilized in the method is made of InGaAsP and constructed into a multi-quantum well structure.

Abstract translation: 目的：提供一种通过使用半导体激光器的水平耦合和半导体光放大器来实现电光波长转换器的方法，以确保宽范围的输入功率，因为​​该方法不需要常规的马赫 - 泽德干涉仪结构，因此 利用诸如可变波长激光二极管的常规半导体激光器的特性。 构成：通过使用半导体激光器的水平耦合和半导体光学放大器来实现电光波长转换器的方法包括以下步骤：蚀刻第一和第二波导（100,200）中的至少一个的端部（100a，100b） （100a，100b）进行防反射，分割第一和第二波导管（100,200），分别得到分割的反射面和分割的防反射面。 在其上设置有在该方法中使用的第一和第二波导（100,200）的有源激光器由InGaAsP制成并构成多量子阱结构。

公开(公告)号：KR1020010077675A

公开(公告)日：2001-08-20

申请号：KR1020000005631

申请日：2000-02-07

Applicant: 한국과학기술연구원

Inventor： 우덕하 ,  이석 ,  한일기 ,  김선호 ,  최원준 ,  변영태 ,  김회종 ,  김재헌 ,  강광남 ,  김대식 ,  양지상

IPC: H01L31/14

Abstract: PURPOSE: A method for extending the gain bandwidth of a semiconductor optical amplifier is provided to obtain the semiconductor optical amplifier having a wide gain bandwidth by using a quantum dot as a gain region of the semiconductor optical amplifier. CONSTITUTION: An InP(Indium Phosphorus) buffer layer is grown at a predetermined thickness(S10). After the growing of the InP buffer layer, a predetermined gas is supplied(S20, S30, S40). An InAs(Indium arsenide) single well layer is grown on the InP buffer layer(S50). After the growing of the InAs layer, a predetermined gas is supplied(S60, S70, S80). An InP cap layer is grown on the InAs layer(S90).

Abstract translation: 目的：提供一种用于扩展半导体光放大器的增益带宽的方法，通过使用量子点作为半导体光放大器的增益区，获得具有宽增益带宽的半导体光放大器。 构成：以预定厚度生长InP（铟磷）缓冲层（S10）。 在InP缓冲层生长之后，提供预定的气体（S20，S30，S40）。 在InP缓冲层上生长InAs（砷化铟）单阱层（S50）。 在InAs层生长之后，提供预定的气体（S60，S70，S80）。 InAs层在InAs层上生长（S90）。

公开(公告)号：KR100121563B1

公开(公告)日：1997-11-13

申请号：KR1019940011792

申请日：1994-05-28

Applicant: 한국과학기술연구원

Inventor： 강광남 ,  이정일 ,  우덕하 ,  김회종 ,  이석 ,  이유종 ,  이명복

IPC: G03F7/00

Abstract: It is an object to provide a method capable of easily correcting each mask patterns when manufacturing a mulilayer mask by converting an electronic microscope into a simply additional device in order to perform an electron beam lithography while maintaining original functions thereof. The method according to the present invention can easily compensate defects of a mask prior to manufacturing the mask by using functions of a microscope. The method performs an electron beam lithography to directly represent a pattern on a sample and manufacture the mask while maintaining original functions of the microscope.

Abstract translation: 本发明的目的是提供一种能够在通过将电子显微镜转换为简单的附加装置来制造多层掩模时容易地校正每个掩模图案的方法，以便在保持其原始功能的同时进行电子束光刻。 根据本发明的方法可以通过使用显微镜的功能，在制造掩模之前容易地补偿掩模的缺陷。 该方法进行电子束光刻以直接表示样品上的图案并制造掩模，同时保持显微镜的原始功能。