公开(公告)号：EP3052901A1

公开(公告)日：2016-08-10

申请号：EP14851277.5

申请日：2014-10-02

Applicant: Robert Bosch GmbH

Inventor： FEYH, Ando ,  O'BRIEN, Gary

IPC: G01D21/02 ,  G01P15/08 ,  G01P13/00 ,  G01L9/06 ,  G01L7/08

CPC classification number: B81B7/02 ,  B81B2201/025 ,  B81B2201/0264 ,  G01C25/00 ,  G01D21/02 ,  G01L19/0092 ,  G01L19/12 ,  G01P15/0802 ,  G01P15/125 ,  G01P15/18

Abstract: In accordance with one embodiment, a single chip combination inertial and pressure sensor device includes a substrate, an inertial sensor including a movable sensing structure movably supported above the substrate, and a first fixed electrode positioned adjacent to the movable sensing structure, and a pressure sensor including a gap formed in the sensor at a location directly above the movable sensing structure, and a flexible membrane formed in a cap layer of the device, the flexible membrane defining a boundary of the gap and configured to flex toward and away from the gap in response to a variation in pressure above the flexible membrane.

Abstract translation: 根据一个实施例，单芯片组合惯性和压力传感器装置包括基板，惯性传感器和可移动感测结构，所述惯性传感器包括可移动地支撑在所述基板上方的可移动感测结构以及邻近所述可移动感测结构定位的第一固定电极， 包括在可移动感测结构正上方的位置处的传感器中形成的间隙以及形成在装置的盖层中的柔性膜，柔性膜限定间隙的边界并且被配置为朝向和远离间隙弯曲 对柔性膜上方压力变化的响应。

公开(公告)号：EP2963387A1

公开(公告)日：2016-01-06

申请号：EP15172600.7

申请日：2015-06-17

Applicant: STMicroelectronics Srl

Inventor： Falorni, Luca Giuseppe ,  Valzasina, Carlo ,  Carminati, Roberto ,  Tocchio, Alessandro

IPC: G01C19/5733 ,  B81B3/00 ,  G01C19/5747

CPC classification number: G01C19/5712 ,  B81B3/0018 ,  B81B3/0086 ,  B81B2201/025 ,  B81B2203/0163 ,  G01C19/5733 ,  G01C19/5747

Abstract: The MEMS device (1) has a support region (11) elastically carrying a suspended mass (2) through first elastic elements (5; 30-37). A tuned dynamic absorber (3, 6) is elastically coupled to the suspended mass and configured to dampen quadrature forces acting on the suspended mass at the natural oscillation frequency of the dynamic absorber. The tuned dynamic absorber (3, 6) is formed by a damping mass (3) coupled to the suspended mass (2) through second elastic elements (6). In an embodiment, the suspended mass (2) and the damping mass (3) are formed in a same structural layer, for example of semiconductor material, and the damping mass (3) is surrounded by the suspended mass (2).

Abstract translation: 的MEMS装置（1）具有一个支承区（11）可弹性携带通过第一弹性元件（5; 30-37）一悬挂质量（2）。 甲调谐动力吸振器（3,6）被弹性地联接到所述悬挂质量和配置为抑制作用于悬挂质量的动力吸振器的固有振荡频率的正交力。 调谐动力吸振器（3,6）是通过（6）第二弹性元件连接到所述悬挂质量（2）阻尼块（3）形成的。 在悬挂质量（2）的实施方式和阻尼块（3）形成在一个相同的结构层，半导体材料的实施例，而阻尼块（3）由所述悬挂质量（2）所包围。

公开(公告)号：EP2727146A4

公开(公告)日：2015-09-23

申请号：EP12805018

申请日：2012-06-29

Applicant: MURATA ELECTRONICS OY

Inventor： KUISMA HEIKKI

IPC: H01L25/18 ,  B81C1/00 ,  G01L19/00 ,  G01L19/14 ,  G01P1/02 ,  H01L23/538 ,  H01L25/16

CPC classification number: B81B7/0074 ,  B81B2201/0235 ,  B81B2201/025 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81B2201/036 ,  B81B2207/012 ,  B81B2207/095 ,  B81C1/00333 ,  G01C19/5783 ,  G01L19/0084 ,  G01L19/148 ,  G01P1/023 ,  G01P1/026 ,  G01P15/0802 ,  H01L21/568 ,  H01L23/528 ,  H01L23/5389 ,  H01L24/16 ,  H01L24/17 ,  H01L24/19 ,  H01L24/32 ,  H01L24/73 ,  H01L24/83 ,  H01L24/92 ,  H01L24/96 ,  H01L24/97 ,  H01L25/16 ,  H01L25/18 ,  H01L25/50 ,  H01L27/14618 ,  H01L2223/6677 ,  H01L2224/12105 ,  H01L2224/16145 ,  H01L2224/1703 ,  H01L2224/32145 ,  H01L2224/73204 ,  H01L2224/8312 ,  H01L2224/8319 ,  H01L2224/92125 ,  H01L2224/97 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/1461 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/18162 ,  H01L2224/81 ,  H01L2224/83 ,  H01L2924/00012 ,  H01L2924/00

Abstract: A method of making a system-in-package device, and a system-in-package device is disclosed. In the method, at least one first species die with predetermined dimensions, at least one second species die with predetermined dimensions, and at least one further component of the system-in-device is included in the system-in package device. At least one of the first and second species dies is selected for redimensioning, and material is added to at least one side of the selected die such that the added material and the selected die form a redimensioned die structure. A connecting layer is formed on the redimensioned die structure. The redimensioned die structure is dimensioned to allow mounting of the non-selected die and the at least one further component into contact with the redimensioned die structure via the connecting layer.

公开(公告)号：EP2727132A4

公开(公告)日：2015-01-07

申请号：EP12805169

申请日：2012-06-29

Applicant: INVENSENSE INC

Inventor： SEEGER JOSEPH ,  TCHERTKOV IGOR ,  AKYOL HASAN ,  YARALIOGLU GOKSEN G ,  NASIRI STEVEN S ,  GURIN ILYA

IPC: H01L21/00 ,  G01F1/20

CPC classification number: B81B7/02 ,  B81B2201/025 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81C1/00246 ,  B81C2203/0771 ,  G01L1/144 ,  G01L1/148 ,  G01L5/0028 ,  G01L9/0072 ,  G01L15/00 ,  G01L19/0092 ,  G01L19/0636 ,  G01L19/148 ,  G01L27/007

公开(公告)号：EP2455329B1

公开(公告)日：2014-09-24

申请号：EP11190205.2

申请日：2011-11-22

Applicant: Honeywell International Inc.

Inventor： Horning, Robert D. ,  Supino, Ryan

IPC: H01L21/768 ,  H01L25/065

CPC classification number: B81B7/0016 ,  B81B2201/025 ,  B81B2207/07

公开(公告)号：EP2761307A1

公开(公告)日：2014-08-06

申请号：EP12753441.0

申请日：2012-08-15

Applicant: Robert Bosch GmbH

Inventor： FEYH, Ando

IPC: G01P15/08 ,  G01P15/12 ,  G01L9/00

CPC classification number: H01L29/84 ,  B81B3/0021 ,  B81B2201/025 ,  B81B2201/0264 ,  G01L9/0098 ,  G01P15/0802 ,  G01P15/124 ,  H01L21/02532 ,  H01L21/30604 ,  H01L29/16 ,  H01L29/4916 ,  H01L29/66568

Abstract: The invention provides a micromechanical sensor apparatus having a movable gate and a corresponding production method. The sensor apparatus having a movable gate comprises a field effect transistor (2) having a movable gate (7) which is separated from a channel region (K) by a cavity (11), wherein the channel region (K) is covered by a gate insulation layer (3).

公开(公告)号：EP2455327A3

公开(公告)日：2014-07-16

申请号：EP11190200.3

申请日：2011-11-22

Applicant: Honeywell International, Inc.

Inventor： Horning, Robert D. ,  Supino, Ryan

IPC: B81B3/00

CPC classification number: B81B3/0086 ,  B81B2201/025 ,  B81B2203/0136 ,  Y10T29/49117

Abstract: A MEMS sensor comprises a substrate and at least one proof mass having a first plurality of combs. The proof mass is coupled to the substrate via one or more suspension beams such that the proof mass and the first plurality of combs are movable. The MEMS sensor also comprises at least one anchor having a second plurality of combs. The anchor is coupled to the substrate such that the anchor and second plurality of combs are fixed in position relative to the substrate. The first plurality of combs are interleaved with the second plurality of combs. Each of the combs comprises a plurality of conductive layers electrically isolated from each other by one or more non-conductive layers. Each conductive layer is individually coupled to a respective electric potential such that capacitance between the combs varies approximately linearly with displacement of the movable combs in an out-of-plane direction.

公开(公告)号：EP2455331A3

公开(公告)日：2014-01-01

申请号：EP11190203.7

申请日：2011-11-22

Applicant: Honeywell International, Inc.

Inventor： Horning, Robert D. ,  Supino, Ryan

IPC: H01L21/768 ,  H01L25/065

CPC classification number: H01L29/84 ,  B81B7/0032 ,  B81B7/0038 ,  B81B7/0074 ,  B81B7/0077 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/025 ,  B81C2201/019 ,  H01L2224/48091 ,  H01L2924/00014

Abstract: Systems and methods for a micro-electromechanical system (MEMS) device are provided. In one embodiment, a system comprises a first outer layer and a first device layer comprising a first set of MEMS devices, wherein the first device layer is bonded to the first outer layer. The system also comprises a second outer layer and a second device layer comprising a second set of MEMS devices, wherein the second device layer is bonded to the second outer layer. Further, the system comprises a central layer having a first side and a second side opposite that of the first side, wherein the first side is bonded to the first device layer and the second side is bonded to the second device layer.

公开(公告)号：EP2455330A3

公开(公告)日：2014-01-01

申请号：EP11190202.9

申请日：2011-11-22

Applicant: Honeywell International, Inc.

Inventor： Horning, Robert D.

IPC: H01L21/768 ,  H01L25/065 ,  B81B7/02

CPC classification number: B81B7/02 ,  B81B7/0041 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/025 ,  B81B2207/095 ,  B81B2207/096 ,  B81C2201/019 ,  H01L2224/48091 ,  H01L2924/1461 ,  H01L2924/00014 ,  H01L2924/00

Abstract: Systems and methods for a micro-electromechanical system (MEMS) apparatus are provided. In one embodiment, a system comprises a first double chip that includes a first base layer; a first device layer bonded to the first base layer, the first device layer comprising a first set of MEMS devices; and a first top layer bonded to the first device layer, wherein the first set of MEMS devices is hermetically isolated. The system also comprises a second double chip that includes a second base layer; a second device layer bonded to the second base layer, the second device layer comprising a second set of MEMS devices; and a second top layer bonded to the second device layer, wherein the second set of MEMS devices is hermetically isolated, wherein a first top surface of the first top layer is bonded to a second top surface of the second top layer.

公开(公告)号：EP2455329A3

公开(公告)日：2014-01-01

申请号：EP11190205.2

申请日：2011-11-22

Applicant: Honeywell International, Inc.

Inventor： Horning, Robert D. ,  Supino, Ryan

IPC: H01L21/768 ,  H01L25/065

CPC classification number: B81B7/0016 ,  B81B2201/025 ,  B81B2207/07

Abstract: In an example, an interposer chip is provided. The interposer chip includes a base portion and a chip mounting portion. The interposer chip also includes one or more flexures connecting the base portion to the chip mounting portion. Additionally, a first plurality of projections extends from the base portion towards the chip mounting portion, and a second plurality of projections extends from the chip mounting portion towards the base portion and extending into interstices formed by first plurality of projections.