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    Systems and methods for a four-layer chip-scale MEMS device
    221.
    发明公开
    Systems and methods for a four-layer chip-scale MEMS device 有权
    在Chipgröße的Systeme und Verfahrenfürvierlagige MEMS-Vorrichtung

    公开(公告)号：EP2455330A2

    公开(公告)日：2012-05-23

    申请号：EP11190202.9

    申请日：2011-11-22

    Applicant: Honeywell International, Inc.

    Inventor： Horning, Robert D.

    IPC: B81B7/02 ,  B81B7/00

    CPC classification number: B81B7/02 ,  B81B7/0041 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/025 ,  B81B2207/095 ,  B81B2207/096 ,  B81C2201/019 ,  H01L2224/48091 ,  H01L2924/1461 ,  H01L2924/00014 ,  H01L2924/00

    Abstract: Systems and methods for a micro-electromechanical system (MEMS) apparatus are provided. In one embodiment, a system comprises a first double chip that includes a first base layer; a first device layer bonded to the first base layer, the first device layer comprising a first set of MEMS devices; and a first top layer bonded to the first device layer, wherein the first set of MEMS devices is hermetically isolated. The system also comprises a second double chip that includes a second base layer; a second device layer bonded to the second base layer, the second device layer comprising a second set of MEMS devices; and a second top layer bonded to the second device layer, wherein the second set of MEMS devices is hermetically isolated, wherein a first top surface of the first top layer is bonded to a second top surface of the second top layer.

    Abstract translation: 提供了一种用于微机电系统（MEMS）装置的系统和方法。 在一个实施例中，系统包括第一双芯片，其包括第一基层; 结合到第一基层的第一器件层，第一器件层包括第一组MEMS器件; 以及结合到第一器件层的第一顶层，其中第一组MEMS器件被气密隔离。 该系统还包括第二双芯片，其包括第二基层; 结合到第二基层的第二器件层，第二器件层包括第二组MEMS器件; 以及结合到所述第二器件层的第二顶层，其中所述第二组MEMS器件是气密隔离的，其中所述第一顶层的第一顶表面接合到所述第二顶层的第二顶表面。

    Vibration isolation interposer die
    222.
    发明公开
    Vibration isolation interposer die 有权
    Vibrationsisolierung durch ein zwischengelagertes芯片

    公开(公告)号：EP2455329A2

    公开(公告)日：2012-05-23

    申请号：EP11190205.2

    申请日：2011-11-22

    Applicant: Honeywell International, Inc.

    Inventor： Horning, Robert D. ,  Supino, Ryan

    IPC: B81B7/00

    CPC classification number: B81B7/0016 ,  B81B2201/025 ,  B81B2207/07

    Abstract: In an example, an interposer chip is provided. The interposer chip includes a base portion and a chip mounting portion. The interposer chip also includes one or more flexures connecting the base portion to the chip mounting portion. Additionally, a first plurality of projections extends from the base portion towards the chip mounting portion, and a second plurality of projections extends from the chip mounting portion towards the base portion and extending into interstices formed by first plurality of projections.

    Abstract translation: 在一个示例中，提供了插入器芯片。 插入片包括基部和芯片安装部。 插入器芯片还包括将基部连接到芯片安装部分的一个或多个挠曲件。 此外，第一多个突起从基部朝向芯片安装部分延伸，并且第二多个突起从芯片安装部分朝向基部延伸并延伸到由第一多个突起形成的间隙中。

    Electrical contact for a mems device and method of making
    223.
    发明公开
    Electrical contact for a mems device and method of making 审中-公开
    用于MEMS装置的电接触，并且其制造方法

    公开(公告)号：EP1760039A3

    公开(公告)日：2012-05-02

    申请号：EP06076605.2

    申请日：2006-08-21

    Applicant: Delphi Technologies, Inc.

    Inventor： Christenson, John C.

    IPC: B81C1/00 ,  B81B7/00

    CPC classification number: B81B7/0006 ,  B81B2201/025 ,  G01P15/0802 ,  G01P15/125

    Abstract: A method for making a subsurface electrical contact (34) on a micro-electrical-mechanical-systems (MEMS) device (10). The contact (34) is formed by depositing a layer of polycrystalline silicon (34) onto a surface (16) within a cavity (20) buried under a device silicon layer (24). The polycrystalline silicon layer (34) is deposited in the cavity (20) through holes (30 and 32) etched through the device silicon (24) and reseals the cavity (20) during the polycrystalline silicon deposition step. The polycrystalline silicon layer (24) can then be masked and etched, or etched back to expose the device layer (24) of the micromachined device (10). Through the layer of polycrystalline silicon (34), a center hub (18) of the device (10) may be electrically contacted.

    Vibration transducer and its manufacturing method
    224.
    发明公开
    Vibration transducer and its manufacturing method 有权
    Schwingungstransducer和Herstellungsverfahrendafür

    公开(公告)号：EP2428783A1

    公开(公告)日：2012-03-14

    申请号：EP11180829.1

    申请日：2011-09-09

    Applicant: Yokogawa Electric Corporation

    Inventor： Yoshida, Takashi

    IPC: G01L1/10 ,  G01L9/00

    CPC classification number: G01L9/0019 ,  B81B3/001 ,  B81B2201/025 ,  B81B2201/0264 ,  B81B2201/0285 ,  B81B2203/0118 ,  G01L1/106 ,  G01L9/0013 ,  H03H9/2457 ,  H03H2009/02496

    Abstract: A vibration transducer includes a silicon single crystal vibration beam provided over a silicon single crystal substrate, the vibration beam having a sectional shape that is longer in a direction perpendicular to a surface of the silicon single crystal substrate than in a direction parallel with it, a shell made of silicon, surrounding the vibration beam with a gap, and forming a vacuum room together with the silicon single crystal substrate, a plate-like first electrode plate disposed parallel with the surface of the silicon single crystal substrate, the first electrode plate having one end connected to the vibration beam, plate-like second and third electrode plates disposed parallel with the surface of the silicon single crystal substrate so as to be opposed to each other with the vibration beam interposed in between, and asperities formed on confronting side surfaces of the vibration beam and the second and third electrode plates.

    Abstract translation: 振动传感器包括设置在硅单晶衬底上的硅单晶振动束，所述振动束具有在与所述硅单晶衬底的表面垂直的方向上比在与其平行的方向上更长的截面形状， 由硅制成的外壳围绕着具有间隙的振动梁，与硅单晶基板一起形成真空室，与硅单晶基板的表面平行设置的板状的第一电极板，第一电极板具有 一端与振动束连接，板状的第二和第三电极板与硅单晶基板的表面平行设置，以便将振动光束插入其间彼此相对，并且形成在相对侧面上的凹凸 的振动束和第二和第三电极板。

    SCHWINGFÄHIGES MIKROMECHANISCHES SYSTEM MIT EINEM BALKENFÖRMIGEN ELEMENT
    225.
    发明公开
    SCHWINGFÄHIGES MIKROMECHANISCHES SYSTEM MIT EINEM BALKENFÖRMIGEN ELEMENT 审中-公开
    SCHWINGFÄHIGESMIKROMECHANISCHES系统麻醉品EINEMBALKENFÖRMIGENELEMENT

    公开(公告)号：EP2414274A1

    公开(公告)日：2012-02-08

    申请号：EP09776513.5

    申请日：2009-03-31

    Applicant: Siemens AG

    Inventor： DIENEL, Marco ,  FORKE, Roman ,  SCHEIBNER, Dirk

    IPC: B81B3/00

    CPC classification number: B81B3/0078 ,  B81B2201/025 ,  B81B2203/0118 ,  Y10T29/49007

    Abstract: The invention relates to a micromechanical system (200) having at least one beam-shaped element (210) that comprises an exposed end (211) and is connected to a further element of the micromechanical system (200) at the other end (212) thereof. According to the invention, in order to optimize the mechanical properties of the micromechanical system (200), recesses (213) are provided in the beam-shaped element (210) in such a way that the mass of the beam-shaped elements (210) decreases toward the exposed end (211). The invention further relates to a method for creating a micromechanical system (200) having at least one beam-shaped element (210).

    Abstract translation: 具有至少一个梁状元件的微机械系统的暴露端在另一端连接到微机械系统的另一元件。 为了优化微机械系统的机械性能，在波束形元件中设置凹槽，使得波束形元件的质量朝着暴露端减小。

    A METHOD OF ADDING MASS TO MEMS STRUCTURES
    228.
    发明公开
    A METHOD OF ADDING MASS TO MEMS STRUCTURES 审中-公开
    方法添加质量MEMS结构

    公开(公告)号：EP1620257A2

    公开(公告)日：2006-02-01

    申请号：EP04750262.0

    申请日：2004-04-16

    Applicant: Freescale Semiconductor, Inc.

    Inventor： MCNEIL, Andrew, C. ,  LI, Gary ,  O'BRIEN, Gary, J.

    IPC: B32B9/00 ,  C23F1/00 ,  G01P3/00

    CPC classification number: B81B3/0078 ,  B81B2201/025 ,  G01P15/08 ,  G01P15/0802 ,  G01P15/0888 ,  G01P2015/0814 ,  Y10T428/24917

    Abstract: A proof mass (11) for a MEMS device is provided herein. The proof mass comprises a base (13) comprising a semiconductor material, and at least one appendage (15) adjoined to said base by way of a stem (21). The appendage (15) comprises a metal (17) or other such material that may be disposed on a semiconductor material (19). The metal increases the total mass of the proof mass (11) as compared to a proof mass of similar dimensions made solely from semiconductor materials, without increasing the size of the proof mass. At the same time, the attachment of the appendage (15) by way of a stem (21) prevents stresses arising from CTE differentials in the appendage from being transmitted to the base, where they could contribute to temperature errors.

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