公开(公告)号：KR1020040102390A

公开(公告)日：2004-12-08

申请号：KR1020030033747

申请日：2003-05-27

Applicant: 삼성전자주식회사

Inventor： 서오권 ,  전찬봉 ,  송인상

IPC: H03H9/24

CPC classification number: B81C1/00142 ,  B81C2201/014 ,  H03H9/173 ,  H03H9/24

Abstract: PURPOSE: A method and apparatus for manufacturing an air gap type FBAR using a polysilicon sacrificial layer and an etching stopper layer are provided to prevent problems due to a dry-etching using a plasma by perform the dry-etching without using the plasma. CONSTITUTION: An apparatus for manufacturing an air gap type FBAR(Film Bulk Acoustic Resonator) using a polysilicon sacrificial layer and an etching stopper layer includes a substrate having an etching stopper film(110) vaporized thereon, a polysilicon layer(120), the etching stopper layer(130a,130b), a membrane layer(130), and a laminated resonator. The polysilicon layer is vaporized on the etching stopper film and patterned to form a hollow portion(170). The etching stopper layer is vaporized on an interlayer between the hollow portion and the polysilicon. The membrane layer is vaporized on the polysilicon and the hollow portion. The laminated resonator is formed on the membrane layer.

Abstract translation: 目的：提供一种使用多晶硅牺牲层和蚀刻停止层制造气隙型FBAR的方法和装置，以防止使用等离子体的干蚀刻而不使用等离子体进行干蚀刻的问题。 构成：使用多晶硅牺牲层和蚀刻停止层制造气隙型FBAR（薄膜体积声谐振器）的装置包括：在其上蒸发有蚀刻停止膜（110）的基板，多晶硅层（120），蚀刻 阻挡层（130a，130b），膜层（130）和叠层谐振器。 多晶硅层在蚀刻停止膜上蒸发并图案化以形成中空部分（170）。 蚀刻停止层在中空部分和多晶硅之间的中间层上蒸发。 膜层在多晶硅和中空部分上蒸发。 层压谐振器形成在膜层上。

公开(公告)号：WO2019054873A1

公开(公告)日：2019-03-21

申请号：PCT/NL2018/050610

申请日：2018-09-17

Applicant: BERKIN B.V.

Inventor： ZHAO, Yiyuan ,  VELTKAMP, Henk-Willem ,  ZENG, Yaxiang ,  LOTTERS, Joost Conrad ,  WIEGERINK, Remco John

IPC: B81C1/00

CPC classification number: B81C1/00071 ,  B81B2201/0214 ,  B81B2201/0242 ,  B81B2201/0292 ,  B81B2201/058 ,  B81C2201/0112 ,  B81C2201/014 ,  B81C2201/0181

Abstract: The invention relates to a method of fabricating a micro machined channel, comprising the steps of providing a substrate of a first material and having a buried layer of a different material therein, and forming at least two trenches in said substrate by removing at least part of said substrate. Said trenches are provided at a distance from each other and at least partly extend substantially parallel to each other, as well as towards said buried layer. The method comprises the step of forming at least two filled trenches by providing a second material different from said first material and filling said at least two trenches with at least said second material; forming an elongated cavity in between said filled trenches by removing at least part of said substrate extending between said filled trenches; and forming an enclosed channel by providing a layer of material in said cavity and enclosing said cavity.

公开(公告)号：WO2016189451A1

公开(公告)日：2016-12-01

申请号：PCT/IB2016/053013

申请日：2016-05-23

Applicant: ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE (EPFL)

Inventor： FANTNER, Georg Ernest ,  ADAMS, Jonathan David ,  HOSSEINI, Nahid

IPC: G01Q60/38 ,  B81B3/00 ,  B81C1/00 ,  G01Q70/14

CPC classification number: B81B3/0045 ,  B81B3/0078 ,  B81B2201/12 ,  B81B2203/0118 ,  B81C1/0015 ,  B81C1/00682 ,  B81C2201/014 ,  G01Q20/04 ,  G01Q60/38 ,  G01Q70/14

Abstract: The present invention relates to a cantilever or membrane comprising a body and an elongated beam attached to the body. The elongated beam includes a first layer comprising a first material, a second layer comprising a second material having an elastic modulus different to that of the first material, a third layer comprising a third material having an elastic modulus different to that of the first material, where the first layer is sandwiched between the second layer and the third layer.

Abstract translation: 本发明涉及悬臂或膜，其包括主体和附接到主体的细长梁。 细长梁包括第一层，第一层包括第一材料，第二层包括具有不同于第一材料的弹性模量的第二材料，第三层包括具有与第一材料不同的弹性模量的第三材料， 其中第一层夹在第二层和第三层之间。

公开(公告)号：WO2015189044A1

公开(公告)日：2015-12-17

申请号：PCT/EP2015/061941

申请日：2015-05-29

Applicant: ROBERT BOSCH GMBH

Inventor： STRAUB, Rainer ,  PINTER, Stefan ,  HABERER, Dietmar ,  BAADER, Johannes ,  ARMBRUSTER, Simon ,  HAUSNER, Ralf

IPC: B81C3/00

CPC classification number: B81C1/00801 ,  B81B7/0025 ,  B81B2201/042 ,  B81B2203/0163 ,  B81C3/001 ,  B81C2201/014 ,  B81C2203/0145 ,  G02B26/0833

Abstract: Mikromechanische Schichtenanordnung (100), aufweisend: -wenigstens zwei voneinander unabhängig strukturierte mechanisch aktive Funktionsschichten(10, 20), die vertikal übereinander angeordnet und funktional miteinander gekoppelt sind.

Abstract translation: 微机械层布置（100）包括：-wenigstens其竖直地布置在另一个之上并且可操作地耦合在一起的两个独立地图案化的机械活性的功能层（10，20）。

公开(公告)号：WO2015065395A1

公开(公告)日：2015-05-07

申请号：PCT/US2013/067600

申请日：2013-10-30

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.

Inventor： MCKAY, Roger A. ,  SADIK, Patrick W.

IPC: B01D69/00

CPC classification number: B81C1/00539 ,  B81B2201/058 ,  B81C1/00119 ,  B81C2201/0115 ,  B81C2201/014 ,  C23C14/5873 ,  C23F1/02 ,  C23F1/16 ,  H01M4/0492 ,  H01M4/386

Abstract: Etching islands are formed on a first face of a substrate and a second face of the substrate non-parallel to the first face. The first face and the second face of the substrate are concurrently exposed to a solution that reacts with the etching islands to concurrently form porous regions extending into the first face and the second face.

Abstract translation: 在基板的第一面和不平行于第一面的基板的第二面上形成蚀刻岛。 衬底的第一面和第二面同时暴露于与蚀刻岛反应的溶液，以同时形成延伸到第一面和第二面的多孔区域。

公开(公告)号：WO2014159552A1

公开(公告)日：2014-10-02

申请号：PCT/US2014/024147

申请日：2014-03-12

Applicant: ROBERT BOSCH GMBH ,  FEYH, Ando ,  GRAHAM, Andrew

Inventor： FEYH, Ando ,  GRAHAM, Andrew

IPC: B81B3/00 ,  B81B7/00 ,  H04R19/00

CPC classification number: H04R19/04 ,  B81B7/02 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81C1/00246 ,  B81C2201/014 ,  B81C2203/0714 ,  H04R19/005 ,  H04R31/00

Abstract: A microelectromechanical system (MEMS) microphone has a substrate including a backside trench, and a flexible membrane deposited on the substrate extending over the backside trench. The flexible membrane includes a first electrode. A silicon spacer layer is deposited on a perimeter portion of the flexible membrane. The spacer layer defines an acoustic chamber above the membrane and the backside trench. A silicon rich silicon nitride (SiN) backplate layer is deposited on top of the silicon spacer layer extending over the acoustic chamber. The backplate defines a plurality of opening into the acoustic chamber and includes a metallization that serves as a second electrode.

Abstract translation: 微机电系统（MEMS）麦克风具有包括背面沟槽的衬底和沉积在衬底上的柔性膜，该衬底延伸在背面沟槽上。 柔性膜包括第一电极。 硅间隔层沉积在柔性膜的周边部分上。 间隔层限定了膜上方的声室和背面沟槽。 富硅氮化物（SiN）背板层沉积在在隔音室上延伸的硅间隔层的顶部上。 背板限定了进入声室的多个开口，并且包括用作第二电极的金属化。

公开(公告)号：WO2011161318A1

公开(公告)日：2011-12-29

申请号：PCT/FI2011/050595

申请日：2011-06-21

Applicant: Teknologian tutkimuskeskus VTT ,  PUURUNEN, Riikka ,  HENTTINEN, Kimmo ,  KATTELUS, Hannu ,  SUNI, Tommi

Inventor： PUURUNEN, Riikka ,  HENTTINEN, Kimmo ,  KATTELUS, Hannu ,  SUNI, Tommi

IPC: H01L21/02 ,  B81C1/00 ,  C23C16/455

CPC classification number: H01L21/0228 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81C1/00801 ,  B81C2201/014 ,  B81C2201/0167 ,  B81C2201/053 ,  B81C2203/0118 ,  H01L29/02

Abstract: A method for manufacturing a multi-layer substrate structure such as a CSOI wafer structure (cavity-SOI, silicon-on-insulator) comprising obtaining a first and second wafer, such as two silicon wafers, wherein at least one of the wafers may be optionally provided with a material layer such as an oxide layer (302, 404), forming a cavity on the bond side of the first wafer (306, 406), depositing, preferably by ALD (Atomic Layer Deposition), a material layer, such as thin alumina layer, on either wafer arranged so as to at least in places face the other wafer and cover at least portion of the cavity of the first wafer, such as bottom, wall and/or edge thereof, and enable stopping etching, such as dry etching, into the underlying material (308, 408), and bonding the wafers provided with at least the aforesaid ALD layer as an intermediate layer together to form the multi-layer semi- conductor substrate structure (310, 312).A related multi-layer substrate structure is presented.

Abstract translation: 一种用于制造诸如CSOI晶片结构（空腔SOI，绝缘体上硅）的多层衬底结构的方法，包括获得诸如两个硅晶片的第一和第二晶片，其中至少一个晶片可以是 可选地设置有诸如氧化物层（302,404）的材料层，在第一晶片（306,406）的接合侧上形成空腔，优选通过ALD（原子层沉积）沉积材料层，例如 作为薄氧化铝层，在任一晶片上布置成至少在面对另一晶片的位置并且覆盖第一晶片的空腔的至少一部分，例如底部，壁和/或边缘，并且能够停止蚀刻，例如 作为干蚀刻，进入下层材料（308,408），并将至少提供有上述ALD层的晶片作为中间层结合在一起以形成多层半导体衬底结构（310,312）。 提出了多层基板结构。

公开(公告)号：WO2010060684A3

公开(公告)日：2011-02-24

申请号：PCT/EP2009063469

申请日：2009-10-15

Applicant: BOSCH GMBH ROBERT ,  AHLES MARCUS ,  BENZEL HUBERT ,  WEBER HERIBERT

Inventor： AHLES MARCUS ,  BENZEL HUBERT ,  WEBER HERIBERT

IPC: B81C1/00

CPC classification number: G01L9/0042 ,  B81B2203/0353 ,  B81C1/00087 ,  B81C1/00309 ,  B81C2201/0112 ,  B81C2201/014 ,  B81C2203/0118

Abstract: The invention relates to a method for producing a micromechanical component, the component produced using said method, and a use of the micromechanical component during the production of a micromechanical sensor component. In order to produce the micromechanical component, a first structured layer is first produced on the front side of a semiconductor wafer, and the semiconductor wafer is etched from the front side using a first trench etching step in accordance with said first structured layer. A second structured layer is then applied to the rear side of the semiconductor wafer, and the semiconductor wafer is etched from the rear side using a second trench etching step in accordance with the second structured layer. The invention is characterized in that a through-hole from the front side to the rear side is produced in the semiconductor wafer using the first and the second trench etching step.

Abstract translation: 本发明描述了一种用于制造微机械装置，通过该方法和生产的微机械传感器装置的使用微机械部件的制造的装置的方法。 为了制造微机械部件的最初产生在半导体晶片的前侧上的第一图案化层，在其依赖由第一Trenchätzschritts从正面侧的半导体晶片的装置进行蚀刻。 然后将第二图案化层被施加在半导体晶片的背面通过第二Trenchätzschritts从背面对半导体晶片的装置在它们的依赖性被蚀刻。 本发明的本质在于，在所述半导体晶片通过所述第一和第二Trenchätzschritts而形成从前方到后方的连续开口。

公开(公告)号：WO2009154034A1

公开(公告)日：2009-12-23

申请号：PCT/JP2009/057171

申请日：2009-04-08

Applicant: 住友精密工業株式会社 ,  野沢 善幸 ,  山本 孝

Inventor： 野沢 善幸 ,  山本 孝

IPC: H01L21/3065 ,  B81C1/00

CPC classification number: B81C1/00619 ,  B81B2203/033 ,  B81C1/00531 ,  B81C1/00626 ,  B81C2201/0132 ,  B81C2201/014 ,  H01L21/3065 ,  H01L21/30655

Abstract: 　本発明のシリコン構造体の製造方法は、いわゆるガススイッチングによるドライエッチングの過程で、高速エッチング条件を用いてエッチングする工程（ａ）により、そのシリコン領域のうち最もエッチング速度の速い場所が前記エッチングストップ層までエッチングされる前に、高速エッチング条件のエッチング速度から時間の経過とともにエッチング速度が低下する遷移エッチング条件を用いたエッチング工程（ｂ）を経て、遷移エッチング条件のうち最もエッチング速度の遅い条件のエッチング速度を持つ低速エッチング条件を用いて前記シリコン領域をエッチングする工程（ｃ）を備えている。

Abstract translation: 在制造硅结构的方法中，在采用气体切换的所谓的干法蚀刻工艺中，提供了在低速蚀刻条件下蚀刻硅区域的步骤（c），其中蚀刻速度在 过渡蚀刻条件。 在步骤（a）之前，在高速蚀刻条件下，在蚀刻速度最高的区域蚀刻到蚀刻停止层之前，在转变蚀刻后的蚀刻工序（b）之后，进行步骤（a） 蚀刻速度随时间从高速蚀刻条件的蚀刻速度减小的条件。

公开(公告)号：WO2008113325A3

公开(公告)日：2009-01-29

申请号：PCT/DE2008000434

申请日：2008-03-13

Applicant: FRAUNHOFER GES FORSCHUNG ,  MERZ PETER ,  REIMER KLAUS ,  SENGER FRANK

Inventor： MERZ PETER ,  REIMER KLAUS ,  SENGER FRANK

IPC: B81C1/00

CPC classification number: B81C1/00801 ,  B81C2201/014

Abstract: The invention relates to a method for producing a micromechanical component comprising at least one self-supporting structure. According to said method a conductor track plane (11) and a sacrificial layer (4) consisting of an electrically non-conductive material are applied to a substrate (2) in such a way that the conductor track plane (11) lies between the substrate (2) and the sacrificial layer (4) or inside the sacrificial layer (4), and a layer (3) that forms the self-supporting structure is deposited on the sacrificial layer (4), the latter (4) being partially removed by etching in order to complete the self-supporting structure. An electrically conductive protective layer (15) is embedded in the sacrificial layer (4) above a region on the conductor plane (11) that is to be protected, said protective layer acting as an etching barrier during the etching process for the removal of the sacrificial layer (4). The protective layer (15) is removed again in a subsequent process, leaving a thin sacrificial layer (17) as a passivation layer lying below on the conductor tracks. The method permits sensitive areas of the conductor track plane to be protected and can be simply achieved with existing surface micromechanical processes.

Abstract translation: 本发明涉及一种用于制造具有至少一个自支撑结构，其中导体轨迹平面（11）和由非导电材料制成的牺牲层（4），从而在基板（2）上施加一个微机械部件，该带状导体平面（ 11）（基板2）和牺牲层（4）之间或在所述牺牲层（4），（牺牲层4）的层，在悬臂式结构形成（3）沉积，和牺牲层（4），用于通过所述自支撑结构的完成 蚀刻工艺部分地移除。 在所提出的方法中，在牺牲层（4）的导电保护层（15）嵌入其中的区域的上方被保护的导体轨道面（11），其作为在蚀刻过程中的蚀刻停止用于除去牺牲层中的（4）。 所述保护层（15）在随后的工艺，其中的底层薄牺牲层（17）保持为在导体轨迹的钝化层再次除去。 该方法允许互连级的敏感区域的保护和可以用简单的现有表面微机械处理来实现。