中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

1066 records (took 0.024 seconds)

    PROCEDE DE REALISATION DE STRUCTURE DE MICROSYSTEME A ENTREFERS LATERAUX ET STRUCTURE DE MICROSYSTEME CORRESPONDANTE
    255.
    发明公开
    PROCEDE DE REALISATION DE STRUCTURE DE MICROSYSTEME A ENTREFERS LATERAUX ET STRUCTURE DE MICROSYSTEME CORRESPONDANTE 审中-公开
    显微组织具有侧空气柱以及对应的微观结构方法

    公开(公告)号：EP1508198A1

    公开(公告)日：2005-02-23

    申请号：EP03740599.0

    申请日：2003-04-11

    Applicant: Centre National de la Recherche Scientifique (CNRS)

    Inventor： COLLARD, Dominique ,  KAISER, Andreas ,  Quevy, Emmanuel ,  BUCHAILLOT, Lionel

    IPC: H03H3/007 ,  H03H9/46 ,  H03H9/24 ,  B81B3/00

    CPC classification number: B81C1/0015 ,  B81C2201/0109 ,  H03H3/0072

    Abstract: The invention relates to a method of producing a microsystem structure with lateral gaps and the corresponding microsystem structure. The inventive method consists in: (a) depositing a first sacrificial layer (CS1) on the substrate (S); (b) forming a structural element (SE), add-on structure, on said sacrificial layer, which is intended to form a mobile add-on structure with two degrees of freedom (YY, XX); (c) covering the free surface of the structural element (SE) with a second sacrificial layer of thickness e = dg which is equal to the linear dimension of the gap; (d) covering the first sacrificial layer (CS1) and the free surface of the second sacrificial layer (CS2) with a layer of material (SM) which is intended to form another add-on structure; and (e) etching the second sacrificial layer (CS2) and subsequently the first sacrificial layer (CS1) so as to prevent, at least partially, any contact between the structural element (SE) in the direction of the first and second degree of freedom and any other add-on structure and the substrate (S), in order to produce lateral gaps having a width that is essentially equal to the thickness of the sacrificial layer (CS2). The invention is suitable for the production of microsystem structures and components containing same.

    ELECTROSTATIC DRIVE MEMS ELEMENT, MANUFACTURING METHOD THEREOF, OPTICAL MEMS ELEMENT, OPTICAL MODULATION ELEMENT, GLV DEVICE, AND LASER DISPLAY
    257.
    发明公开
    ELECTROSTATIC DRIVE MEMS ELEMENT, MANUFACTURING METHOD THEREOF, OPTICAL MEMS ELEMENT, OPTICAL MODULATION ELEMENT, GLV DEVICE, AND LASER DISPLAY 审中-公开
    静电驱动MEMS元件，工艺制作，光学MEMS元件，光调制元件，GLV设备和激光显示

    公开(公告)号：EP1460035A1

    公开(公告)日：2004-09-22

    申请号：EP02805882.4

    申请日：2002-12-16

    Applicant: Sony Corporation

    Inventor： IKEDA, Koichi, Sony Corporation

    IPC: B81B3/00 ,  B81C1/00 ,  G02B26/02 ,  G02B5/18

    CPC classification number: B81C1/0015 ,  B81B2201/045 ,  B81B2203/04 ,  B81C2201/0109 ,  B81C2201/0173 ,  B81C2203/0109 ,  G02B26/0841

    Abstract: The present invention provides an electrostatic drive type MEMS device and a manufacturing method thereof, in which flattening the surface of a driving side electrode, improving performance, and further the improvements of the degree of freedom of designing in the manufacturing process are implemented. In addition, the present invention provides a GLV device using this MEMS device, and further a laser display using this GLV device.
    In the present invention an electrostatic drive type MEMS device includes a substrate side electrode and a beam having a driving side electrode driven by electrostatic attraction force or electrostatic repulsion force that acts between the substrate side electrode and driving side electrode, in which the substrate side electrode is formed of an impurities-doped conductive semiconductor region in a semiconductor substrate.

    Abstract translation: 本发明提供了对静电驱动型MEMS器件及其制造方法，其中，展平的驱动侧电极的表面上，提高性能，并进一步在制造过程的设计来实现的自由度的改进。 此外，本发明提供使用此MEMS器件的GLV装置，以及使用该GLV装置还激光显示器。 在本发明中，以静电驱动型MEMS器件包括基板侧电极和具有由静电引力或静电斥力驱动的驱动侧电极的光束做了基板侧电极和驱动侧电极，在它们之间作用 基板侧电极中的半导体的导电性基板上形成杂质掺杂的半导体区域构成。

    Pressure sensor monolithically integrated and relative process of fabrication
    258.
    发明公开
    Pressure sensor monolithically integrated and relative process of fabrication 审中-公开
    单片集成压力传感器及其制造方法

    公开(公告)号：EP1215476A3

    公开(公告)日：2003-09-17

    申请号：EP01830759.5

    申请日：2001-12-12

    Applicant: STMicroelectronics S.r.l.

    Inventor： Coffa, Salvatore ,  Occhipinti, Luigi

    IPC: G01L9/06 ,  G01L9/00

    CPC classification number: B81C1/00182 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81C2201/0109 ,  B81C2201/0115 ,  G01L9/0042

    Abstract: Monolithically integrated pressure sensors of outstanding quality and versatility are produced through micromechanical surface structures definition techniques. A microphonic cavity in the semiconductor substrate is monolithically formed by cutting by plasma etching the front side or the back side of the silicon wafer a plurality of trenches or holes deep enough to extend for at least part of its thickness into a purposely made doped buried layer of opposite type of conductivity of the substrate and of the epitaxial layer grown over it; electrochemically etching through such trenches, the silicon of the buried layer with an electrolytic solution suitable for selectively etching the doped silicon of said opposite type of conductivity, making the silicon of the buried layer porous; and oxidizing and leaching away the silicon so made porous. Preferably, the trenches or holes for accessing the doped buried layer are cut through the epitaxial layer and not through the rear of the monocrystalline silicon substrate thus avoiding the burden of precisely aligning the mask on the rear surface with the masks that are used on the front surface of the substrate. Moreover, the thickness of the substrate is normally much greater than that of the epitaxial layer and thus the need to cut relatively deep and narrow trenches requiring the use of special plasma etching equipment is avoided.

    MEMS structure having a blocked-sacrificial layer support/anchor and a fabrication method of the same
    259.
    发明公开
    MEMS structure having a blocked-sacrificial layer support/anchor and a fabrication method of the same 有权
    MEMS-Struktur，eine verkappteOpferschichtstütze/ Anker enthaltend，und Verfahren zu deren Herstellung

    公开(公告)号：EP1325884A2

    公开(公告)日：2003-07-09

    申请号：EP02258592.1

    申请日：2002-12-13

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Lee, Eun-sung ,  Lee, Moon-chul ,  Kim, Hyun-ok

    IPC: B81B3/00

    CPC classification number: B81B3/0078 ,  B81B2203/0307 ,  B81C2201/0109

    Abstract: A fabrication method for a MEMS structure, the MEMS structure including a fixing portion fixed to the substrate and a floating portion floating above the substrate. A sacrificial layer deposited on the substrate is patterned to have a groove forming a space surrounding the area corresponding to the area in which the fixing portion is to be formed. If the MEMS structure is deposited on the sacrificial layer, a sidewall is formed inside the space and the fixing portion and the floating portion are formed on the sacrificial layer. If the sacrificial layer is removed using an etchant, the sacrificial layer at the bottom of the fixing portion is protected from the etchant by the sidewall and accordingly, the sacrificial layer except the area surrounded by the sidewall is removed. Therefore, only the sacrificial layer under the floating portion is removed. Because the connecting portion is fabricated to have the same thickness as the fixing portion and the floating portion, a strong/durable MEMS structure is provided. Additionally, the boundary between the fixing portion and the floating portion can be precisely determined, and adjustment of the length of the floating portion can be precisely controlled.

    Abstract translation: 一种用于MEMS结构的制造方法，所述MEMS结构包括固定到所述基板的固定部分和浮置在所述基板上方的浮动部分。 沉积在基板上的牺牲层被图案化成具有形成围绕与要形成固定部分的区域相对应的区域的空间的凹槽。 如果MEMS结构沉积在牺牲层上，则在空间内形成侧壁，并且在牺牲层上形成固定部分和浮动部分。 如果使用蚀刻剂去除牺牲层，则固定部分底部的牺牲层被侧壁保护而不受蚀刻剂的影响，因此除去由侧壁包围的区域之外的牺牲层。 因此，只有在浮动部分下面的牺牲层被去除。 由于连接部分被制造成具有与固定部分和浮动部分相同的厚度，所以提供了强/耐久的MEMS结构。 此外，可以精确地确定固定部分和浮动部分之间的边界，并且可以精确地控制浮动部分的长度的调节。

Patent Agency Ranking