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    Wet and dry etching process on <110> silicon and resulting structures
    261.
    发明申请
    Wet and dry etching process on <110> silicon and resulting structures 审中-公开
    湿法和干法蚀刻工艺在<110>硅和结构上

    公开(公告)号：US20020195417A1

    公开(公告)日：2002-12-26

    申请号：US10124612

    申请日：2002-04-17

    Inventor： Dan A. Steinberg

    IPC: C23F001/00

    CPC classification number: B81C1/00547 ,  B81C2201/0132 ,  B81C2201/0133

    Abstract: A method of producing smooth sidewalls on a micromachined device is described. A portion of the wafer is dry etched, forming a dry etched sidewall. The sidewall is covered with a mask. An area adjacent to the dry etched area is wet etched, forming a wet etched sidewall. The mask may optionally be removed after wet etching. The wafer substrate has a orientation, which allows the wet etched area to have nearly vertical wet etched sidewalls.

    Abstract translation: 描述了在微加工装置上制造平滑侧壁的方法。 干燥蚀刻晶片的一部分，形成干蚀刻的侧壁。 侧壁被掩模覆盖。 与干蚀刻区域相邻的区域被湿蚀刻，形成湿蚀刻侧壁。 湿法蚀刻后可以选择去除掩模。 晶片衬底具有<110>取向，其允许湿蚀刻区域具有几乎垂直的湿蚀刻侧壁。

    Method of etching silicon wafer and silicon wafer
    262.
    发明授权
    Method of etching silicon wafer and silicon wafer 失效
    蚀刻硅晶片和硅晶片的方法

    公开(公告)号：US06284670B1

    公开(公告)日：2001-09-04

    申请号：US09120803

    申请日：1998-07-23

    Applicant: Yoshitsugu Abe ,  Hiroshi Tanaka ,  Atsushi Sakaida ,  Toshihisa Taniguchi ,  Tsuyoshi Fukada

    Inventor： Yoshitsugu Abe ,  Hiroshi Tanaka ,  Atsushi Sakaida ,  Toshihisa Taniguchi ,  Tsuyoshi Fukada

    IPC: H01L213063

    CPC classification number: B81C1/00158 ,  B81B2201/0235 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81C2201/0114 ,  B81C2201/0133 ,  H01L21/3063

    Abstract: After an Si wafer is anisotropically etched through an etching mask having an opening in an anisotropically etching solution, an etching face of the Si wafer emerged by the anisotropic etching is subjected to anodic oxidation by applying a positive voltage for anodic oxidation on the Si wafer. As a result, the etching face of the Si wafer is isotropically etched due to the anodic oxidation in the anisotropic etching solution. By the isotropic etching thus performed, a sharp corner formed at an end portion of a recess portion formed in the Si wafer by the anisotropic etching, is rounded. Because the isotropic etching reaction progresses very slowly in comparison with the anisotropic etching, control of the etching can be made easy and accurately. As a result, the thickness of the diaphragm can be prevented from being dispersed.

    Abstract translation: 在通过各向异性蚀刻溶液中具有开口的蚀刻掩模对Si晶片进行各向异性蚀刻之后，通过在Si晶片上施加阳极氧化的正电压，通过各向异性蚀刻出现的Si晶片的蚀刻面进行阳极氧化。 结果，由于各向异性蚀刻溶液中的阳极氧化，Si晶片的蚀刻面被各向同性地蚀刻。 通过如此进行的各向同性蚀刻，通过各向异性蚀刻形成在形成在Si晶片中的凹部的端部处形成的尖角变圆。 由于与各向异性蚀刻相比，各向同性蚀刻反应进行得非常缓慢，因此可以容易且精确地控制蚀刻。 结果，可以防止隔膜的厚度分散。

    미소기전집적시스템 소자의 부양 구조물 제조방법
    264.
    发明授权
    미소기전집적시스템 소자의 부양 구조물 제조방법 失效
    微电子技术的浮动结构的制造方法

    公开(公告)号：KR100856391B1

    公开(公告)日：2008-09-04

    申请号：KR1020060123293

    申请日：2006-12-06

    Applicant: 한국전자통신연구원

    Inventor： 고상춘 ,  전치훈 ,  표현봉 ,  박선희

    IPC: B81C1/00

    CPC classification number: B81C1/00801 ,  B81C2201/0133 ,  B81C2201/0136

    Abstract: 본 발명은 희생층을 이용한 미세기전집적시스템(MicroElectroMechanical System)에 소자의 부양 구조물 제조방법에 있어서 상기 희생층 식각공정시 식각용액에 의해 부양 구조물이 손상되는 것을 방지하여 안정적으로 부양 구조물을 형성할 수 있는 미세기전집적시스템 소자의 제조방법을 제공하기 위한 것으로, 이를 위해 본 발명은 기판 상에 불순물이 도핑된 박막 패턴을 포함하는 희생층을 형성하는 단계와, 상기 희생층 상에 지지막을 형성하는 단계와, 상기 지지막 상에 후속 공정을 통해 부양될 구조물을 형성하는 단계와, 상기 박막 패턴의 양측부가 노출되는 식각 구멍을 형성하는 단계와, 상기 식각 구멍을 매개로 상기 희생층을 제거하여 상기 지지막과 상기 기판 사이에 공기 간극을 형성하는 단계를 포함하는 미소기전집적시스템 소자의 부양 구조물 제조방법을 제공한다.
    미소기전집적시스템, MEMS, 공동, 공기 간극, 희생층, 불순물 박막

    식각기용 카세트
    265.
    发明公开
    식각기용 카세트 有权
    用于蚀刻设备的CASSETTE

    公开(公告)号：KR1020070120299A

    公开(公告)日：2007-12-24

    申请号：KR1020060054873

    申请日：2006-06-19

    Applicant: (주)에스티아이

    Inventor： 노승민

    IPC: G02F1/13

    CPC classification number: G02F1/1303 ,  B81C2201/0133 ,  H01L21/67309 ,  H01L21/6773

    Abstract: A cassette for an etching apparatus is provided to allow glass that moves in an etching process to surface-contact a fixing protrusion by forming inclined surfaces at both sides of the fixing protrusion. At least a pair of side frames(130) connect a front plate(110) and a rear plate(110,12). A plurality of fixing protrusions(131) are formed at the side frame at a predetermined interval, fix inserted glass, and each include inclined surfaces at both sides contacting the glass. A surface inclined at a predetermined angle is formed at an upper surface of the fixing protrusion to prevent adhesion of an etching solution used in an etching process.

    Abstract translation: 提供了一种用于蚀刻装置的盒，以允许在蚀刻工艺中移动的玻璃通过在固定突起的两侧形成倾斜表面而与固定突起表面接触。 至少一对侧框架（130）连接前板（110）和后板（110,12）。 在侧框架上以预定间隔形成多个固定突起（131），固定插入的玻璃，并且每个都包括与玻璃接触的两侧的倾斜表面。 在固定突起的上表面处形成以预定角度倾斜的表面，以防止在蚀刻工艺中使用的蚀刻溶液的粘附。

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