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    A method of making a microfluidic device
    271.
    发明公开
    A method of making a microfluidic device 有权
    Verfahren zum Herstellen einer mikrofluidischen Vorrichtung

    公开(公告)号：EP2554510A2

    公开(公告)日：2013-02-06

    申请号：EP12177755.1

    申请日：2012-07-25

    Applicant: Teledyne Dalsa Semiconductor Inc.

    Inventor： Johnstone, Robert ,  Martel, Stéphane

    IPC: B81C1/00

    CPC classification number: B81C1/00182 ,  B81B2201/054 ,  B81C2201/019 ,  B81C2203/0735

    Abstract: A microfabricated device is fabricated by depositing a first metal layer on a substrate to provide a first electrode of an electrostatic actuator, depositing a first structural polymer layer over the first metal layer, depositing a second metal layer over said first structural polymer layer to form a second electrode of the electrostatic actuator, depositing an insulating layer over said first structural polymer layer, planarizing the insulating layer, etching the first structural polymer layer through the insulating layer and the second metal layer to undercut the second metal layer, providing additional pre-formed structural polymer layers, at least one of which has been previously patterned, and finally bonding the additional structural layers in the form of a stack over the planarized second insulating layer to one or more microfluidic channels. The technique can also be used to make cross over channels in devices without electrostatic actuators, in which case the metal layers can be omitted.

    Abstract translation: 通过在衬底上沉积第一金属层以提供静电致动器的第一电极，在第一金属层上方沉积第一结构聚合物层，在第一结构聚合物层上方沉积第二金属层以形成微结构聚合物层 静电致动器的第二电极，在所述第一结构聚合物层上沉积绝缘层，平坦化绝缘层，通过绝缘层和第二金属层蚀刻第一结构聚合物层以切割第二金属层，提供额外的预形成 结构聚合物层，其中至少一个已经被预先图案化，并且最后将平坦化的第二绝缘层上的堆叠形式的附加结构层结合到一个或多个微流体通道。 该技术还可以用于在没有静电致动器的装置中跨越通道，在这种情况下可以省略金属层。

    HALBLEITER SENSORBAUTEIL
    272.
    发明公开
    HALBLEITER SENSORBAUTEIL 有权
    半导体传感器COMPONENT

    公开(公告)号：EP2524389A2

    公开(公告)日：2012-11-21

    申请号：EP11700251.9

    申请日：2011-01-10

    Applicant: ELMOS Semiconductor AG

    Inventor： TEN HAVE, Arnd

    IPC: H01L21/18

    CPC classification number: B81C1/00158 ,  B81B3/0018 ,  B81B3/0021 ,  B81B3/007 ,  B81B3/0072 ,  B81B3/0081 ,  B81B2201/0235 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81C1/00626 ,  B81C99/0035 ,  B81C2201/019 ,  G01L9/0047 ,  H01L29/4916 ,  H01L29/84

    Abstract: The semiconductor component, in particular for use as a component that is sensitive to mechanical stresses in a micro-electromechanical semiconductor component, for example a pressure or acceleration sensor, is provided with a semiconductor substrate (1, 5), in the upper face of which an active region (78a, 200) made of a material of a first conductivity type is introduced by ion implantation. A bisecting channel region having a defined length (L) and width (B) is designed within the active region (78a, 200). In the active region (78a, 200), each of the ends of the channel region located in the longitudinal extension is followed by a contacting region (79, 80) made of a semiconductor material of a second conductivity type. The channel region is covered by an ion implantation masking material (81), which comprises transverse edges defining the length (L) of the channel region and longitudinal edges defining the width (B) of the channel region and which comprises an edge recess (201, 202) at each of the opposing transverse edges aligned with the longitudinal extension ends of the channel region, the contacting regions (79, 80) that adjoin the channel region extending all the way into said edge recess.

    Systems and methods for a three-layer chip-scale MEMS device
    274.
    发明公开
    Systems and methods for a three-layer chip-scale MEMS device 有权
    Chipgröße的System-und Verfahrenfürdreilagige MEMS-Vorrichtung

    公开(公告)号：EP2455331A2

    公开(公告)日：2012-05-23

    申请号：EP11190203.7

    申请日：2011-11-22

    Applicant: Honeywell International, Inc.

    Inventor： Horning, Robert D. ,  Supino, Ryan

    IPC: B81B7/02 ,  B81B7/00

    CPC classification number: H01L29/84 ,  B81B7/0032 ,  B81B7/0038 ,  B81B7/0074 ,  B81B7/0077 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/025 ,  B81C2201/019 ,  H01L2224/48091 ,  H01L2924/00014

    Abstract: Systems and methods for a micro-electromechanical system (MEMS) device are provided. In one embodiment, a system comprises a first outer layer and a first device layer comprising a first set of MEMS devices, wherein the first device layer is bonded to the first outer layer. The system also comprises a second outer layer and a second device layer comprising a second set of MEMS devices, wherein the second device layer is bonded to the second outer layer. Further, the system comprises a central layer having a first side and a second side opposite that of the first side, wherein the first side is bonded to the first device layer and the second side is bonded to the second device layer.

    Abstract translation: 提供了用于微机电系统（MEMS）装置的系统和方法。 在一个实施例中，系统包括第一外层和包括第一组MEMS器件的第一器件层，其中第一器件层结合到第一外层。 该系统还包括第二外层和包括第二组MEMS器件的第二器件层，其中第二器件层结合到第二外层。 此外，该系统包括具有第一侧和与第一侧相反的第二侧的中心层，其中第一侧接合到第一器件层，第二侧接合到第二器件层。

    VERBUND AUS MINDESTENS ZWEI HALBLEITERSUBSTRATEN SOWIE HERSTELLUNGSVERFAHREN
    279.
    发明授权
    VERBUND AUS MINDESTENS ZWEI HALBLEITERSUBSTRATEN SOWIE HERSTELLUNGSVERFAHREN 有权
    COMPOSITE至少两个半导体基板和制作工艺

    公开(公告)号：EP2197781B1

    公开(公告)日：2011-04-06

    申请号：EP08803521.7

    申请日：2008-09-02

    Applicant: Robert Bosch GmbH

    Inventor： FRANKE, Axel ,  TRAUTMANN, Achim ,  FEYH, Ando ,  KNIES, Sonja

    IPC: B81C1/00

    CPC classification number: B81C1/00238 ,  B81C2201/019 ,  B81C2203/036

    Abstract: The invention relates to a composite (1) comprising a first semiconductor substrate (4) having at least one MEMS-component (2) and at least one second semiconductor substrate (4), wherein at least one layer (6) comprising germanium is bonded eutectically with at least one layer (3) comprising aluminum. According to the invention, the layer (3) comprising aluminum is provided on the first semiconductor substrate (1) and the layer (6) comprising germanium on the second semiconductor substrate (4). The invention further relates to a production method for a composite (1).

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