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公开(公告)号：KR1020110122519A
公开(公告)日：2011-11-10
申请号：KR1020100042075
申请日：2010-05-04
Applicant: 삼성전자주식회사
Inventor： 김덕기
IPC: H01L23/62
CPC classification number: H01L23/5382 , H01L21/28273 , H01L23/5252 , H01L23/5256 , H01L23/544 , H01L27/0629 , H01L27/11526 , H01L27/11531 , H01L29/165 , H01L29/66545 , H01L29/66825 , H01L29/7848 , H01L29/788 , H01L2223/54433 , H01L2223/5444 , H01L2223/54473 , H01L2924/0002 , H01L23/62 , H01L2924/00
Abstract: PURPOSE: A semiconductor device and a manufacturing method thereof are provided to produce an optimized e-fuse structure for high integration by forming a floating pattern to be a structurally floated state. CONSTITUTION: A substrate comprises a first area(70), a second area(80), and a third area(90) which are arranged to be separated. A e-fuse structure(200) is formed in the first area. A first MOS(Metal Oxide Semiconductor) transistor(210) is formed in the second area. A second MOS transistor(220) is formed in the third area. A device isolation pattern is arranged to define active units(ACT1, ACT2, ACT3) in the substrate.
Abstract translation: 目的：提供一种半导体器件及其制造方法，以通过将浮动图案形成为结构浮动状态来产生用于高集成度的优化的电熔丝结构。 构成：衬底包括布置成分离的第一区域（70），第二区域（80）和第三区域（90）。 在第一区域中形成电熔丝结构（200）。 在第二区域中形成第一MOS（金属氧化物半导体）晶体管（210）。 在第三区域中形成第二MOS晶体管（220）。 布置器件隔离图案以定义衬底中的有源单元（ACT1，ACT2，ACT3）。
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公开(公告)号：KR1020110054088A
公开(公告)日：2011-05-25
申请号：KR1020090110594
申请日：2009-11-17
Applicant: 삼성전자주식회사
IPC: H01L27/115 , H01L23/62 , H01L21/8247
CPC classification number: H01L45/146 , H01L27/249 , H01L45/04 , H01L45/12 , H01L45/1226 , H01L45/1666 , H01L23/5252
Abstract: PURPOSE: A nonvolatile memory device is provided to implement high integration by increasing the number of laminated horizontal electrodes. CONSTITUTION: A plurality of horizontal electrodes(10) are laminated as a plurality of layers. A plurality of vertical electrodes(20) is arranged to have an intersection with the plurality of horizontal electrodes. One data layer is interposed on the intersection and has a metal-insulation property. An anti-fuse layer(40) is serially connected to one data layer. The threshold voltage of one data layer is smaller than the breakdown voltage of the anti-fuse layer.
Abstract translation: 目的：提供一种非易失性存储器件，通过增加层压水平电极的数量来实现高集成度。 构成：多个水平电极（10）被层叠成多个层。 多个垂直电极（20）布置成与多个水平电极交叉。 一个数据层插在交叉点上并具有金属绝缘性能。 反熔丝层（40）串联连接到一个数据层。 一个数据层的阈值电压小于反熔丝层的击穿电压。
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公开(公告)号：KR1020100104860A
公开(公告)日：2010-09-29
申请号：KR1020090023543
申请日：2009-03-19
Applicant: 삼성전자주식회사
IPC: H01L27/115 , H01L21/8247
CPC classification number: H01L27/2445 , H01L27/2436 , H01L27/249 , H01L45/04 , H01L45/06 , H01L45/1226 , H01L45/144 , H01L45/146 , H01L45/147 , H01L45/143
Abstract: PURPOSE: The non-volatile memory device adds the lamination number of first electrode lines. It is highly integrated with the making high capacity. CONSTITUTION: A pair of first electrode lines(115a, 115b) is at least formed in the top of the substrate. The element structure(149) is at least allowed in above statement between a pair of first electrode lines. The dielectric layer(130) is formed between the element structure and pair of first electrode lines. The element structure comprises 2 electrode line(140a), and the resistance alteration material layer and channel body(135).
Abstract translation: 目的：非易失性存储器件添加第一电极线的层叠数。 它与高容量高度集成。 构成：至少在衬底的顶部形成一对第一电极线（115a，115b）。 元件结构（149）至少允许在一对第一电极线之间的上述语句中。 介电层（130）形成在元件结构和一对第一电极线之间。 元件结构包括2电极线（140a）和电阻改变材料层和通道体（135）。
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公开(公告)号：KR1020100006059A
公开(公告)日：2010-01-18
申请号：KR1020080066222
申请日：2008-07-08
Applicant: 삼성전자주식회사
IPC: H01L21/82
CPC classification number: H01L23/5252 , G11C17/18 , H01L2924/0002 , H01L2924/00
Abstract: PURPOSE: An electric fuse device and an operation method thereof are provided to improve programming pre/post resistance ratio and have simple structure and small size. CONSTITUTION: An electric fuse device comprises a fuse(100) and a drive component(200). The drive component is connected to the fuse and comprises a resistance change layer whose resistance is changed according to applied voltage. The resistance change layer has a metal-insulator transition property. The drive component comprises two electrodes and the resistance change layer between the two electrodes.
Abstract translation: 目的：提供一种电熔丝装置及其操作方法，以提高编程前/后电阻比，结构简单，体积小。 构成：电熔丝装置包括保险丝（100）和驱动部件（200）。 驱动部件连接到保险丝，并且包括其电阻根据施加的电压而改变的电阻变化层。 电阻变化层具有金属 - 绝缘体转移特性。 驱动部件包括两个电极和两个电极之间的电阻变化层。
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公开(公告)号：KR1020090121012A
公开(公告)日：2009-11-25
申请号：KR1020080047094
申请日：2008-05-21
Applicant: 삼성전자주식회사
CPC classification number: G11C29/787 , G11C17/16 , G11C17/18 , G11C29/808 , G11C2229/763
Abstract: PURPOSE: An electrical fuse device is provided to be used after completing the assembly of a package of a semiconductor chip. CONSTITUTION: An electrical fuse device includes plural fuses(10), a power source and a voltage controller. The power source applies programming voltage to the fuses, and the voltage controller is connected to the power source. The plural fuses are connected to the voltage controller in parallel, and the voltage controller includes a diode(30) of which break-down voltage is 1-5V. The voltage controller is prepared between the power source and the plural fuses.
Abstract translation: 目的：提供一种电熔丝装置，用于在完成半导体芯片封装的组装之后使用。 构成：电熔丝装置包括多个保险丝（10），电源和电压控制器。 电源对保险丝施加编程电压，电压控制器连接到电源。 多个保险丝并联连接到电压控制器，并且电压控制器包括击穿电压为1-5V的二极管（30）。 在电源和多个保险丝之间准备电压控制器。
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Patent Agency Ranking
公开(公告)号：KR1020090108457A
公开(公告)日：2009-10-15
申请号：KR1020080033880
申请日：2008-04-11
Applicant: 삼성전자주식회사
IPC: H01L23/62
CPC classification number: H01L23/5252 , H01L29/78 , H01L2924/0002 , H01L2924/00
Abstract: PURPOSE: An anti-fuse is provided to exclude a separate programming transistor by including a transistor structure. CONSTITUTION: An anti-fuse includes a first conductor(100), a second conductor(200), a dielectric layer, and a diffusion layer(120). The first conductor and the second conductor are separated. The dielectric layer is included between the first conductor and the second conductor. The diffusion layer is included between the dielectric layer and one among the first conductor and the second conductor. The dielectric layer includes one of Al oxide, Si oxide, and Si nitride. The diffusion layer includes Cr.
Abstract translation: 目的：提供反熔丝以通过包括晶体管结构来排除单独的编程晶体管。 构成：反熔丝包括第一导体（100），第二导体（200），电介质层和扩散层（120）。 第一导体和第二导体分开。 介电层包括在第一导体和第二导体之间。 扩散层包括在介电层和第一导体和第二导体中之间。 电介质层包括Al氧化物，Si氧化物和Si氮化物中的一种。 扩散层包括Cr。
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公开(公告)号：KR1020080080743A
公开(公告)日：2008-09-05
申请号：KR1020070020823
申请日：2007-03-02
Applicant: 삼성전자주식회사
CPC classification number: H04M3/42 , H04M3/42059 , H04M3/42102 , H04M2201/18 , H04M7/00 , H04W4/16
Abstract: An apparatus and a method for connecting a call in a communication system are provided to allow terminals in a call-connected state to perform a call connection at the same time for their communication. When the first terminal(420) detects that a call should be connected with the second terminal(430), it transmits a call connection request message for requesting a call connection to the second terminal, to an MSC(Mobile Switching Center)(411). When the second terminal detects that a call is connected with the first terminal, it transmits a call connection request message for requesting a call connection to the first terminal, to the MSC(413). The MSC selects the second terminal and transmits a call connection release request message for releasing a call connection request of the second terminal to the second terminal(415). The MSC transmits a call connection attempt message for a call connection request by the first terminal to the second terminal(417). When the first and second terminals are connected for a call, the call connection of the second terminal is released to allow the terminals to be connected for call communication(419).
Abstract translation: 提供了一种用于在通信系统中连接呼叫的装置和方法，以允许处于呼叫连接状态的终端同时执行呼叫连接以进行通信。 当第一终端（420）检测到呼叫应与第二终端（430）连接时，向MSC（移动交换中心）（411）发送用于请求到第二终端的呼叫连接的呼叫连接请求消息， 。 当第二终端检测到呼叫与第一终端连接时，向MSC（413）发送用于请求到第一终端的呼叫连接的呼叫连接请求消息。 MSC选择第二终端，并向第二终端（415）发送用于释放第二终端的呼叫连接请求的呼叫连接释放请求消息。 MSC向第二终端（417）发送第一终端的呼叫连接请求的呼叫连接尝试消息。 当第一和第二终端被连接用于呼叫时，第二终端的呼叫连接被释放以允许终端连接用于呼叫通信（419）。
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公开(公告)号：KR1020110106751A
公开(公告)日：2011-09-29
申请号：KR1020100025989
申请日：2010-03-23
Applicant: 삼성전자주식회사
IPC: H01L21/8247 , H01L27/115
CPC classification number: H01L27/2409 , H01L27/2463 , H01L45/06 , H01L45/1253 , H01L45/147
Abstract: 반도체소자 및 전자 시스템을 제공한다. 이 반도체 소자는 하부 도전성 패턴 및 상기 하부 도전성 패턴 상의 중간 도전성 패턴을 포함한다. 상기 중간 도전성 패턴 상에 상기 중간 도전성 패턴과 전기적으로 연결된 상부 도전성 패턴이 제공된다. 상기 중간 도전성 패턴은 제1 부분 및 상기 제1 부분의 일부로부터 연장되어 상기 제1 부분보다 높은 레벨에 위치하는 제2 부분을 포함한다. 상기 상부 도전성 패턴은 상기 중간 도전성 패턴의 상기 제1 부분 상에 형성되며 상기 제2 부분보다 높은 레벨에 위치하는 상부면을 갖는다.
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公开(公告)号：KR1020110032252A
公开(公告)日：2011-03-30
申请号：KR1020090089647
申请日：2009-09-22
Applicant: 삼성전자주식회사
IPC: H01L27/115 , H01L21/8247
CPC classification number: H01L29/7827 , G11C2213/79 , H01L27/2454 , H01L27/2463 , H01L29/66666 , H01L45/04 , H01L45/1233 , H01L45/146 , H01L45/147 , H01L45/1683 , G11C13/0004 , H01L27/24
Abstract: PURPOSE: A resistive memory device having a vertical array transistor is provided to reduce a leakage current between memory cells through a word line by forming an element isolation layer on a word line making a resistance variation layer not contact the word line. CONSTITUTION: In a resistive memory device having a vertical array transistor, a gate electrode is formed on a semiconductor substrate. A gate insulating layer(34) is contacted with a part of the gate electrode. A vertical transistor is composed of a single crystal silicon layer. The single crystal silicon layer is contacted with the gate insulating layer and is formed on the semiconductor layer. The single crystal silicon layer has a channel layer which is perpendicular to the semiconductor layer. A memory cell is insulated with the gate electrode and is contacted with the single crystal silicon layer to form a resistance variation layer.
Abstract translation: 目的：提供一种具有垂直阵列晶体管的电阻式存储器件，用于通过在字线上形成元件隔离层来减小存储单元之间通过字线的泄漏电流，从而使电阻变化层不接触字线。 构成：在具有垂直阵列晶体管的电阻式存储器件中，在半导体衬底上形成栅电极。 栅极绝缘层（34）与栅电极的一部分接触。 垂直晶体管由单晶硅层组成。 单晶硅层与栅极绝缘层接触并形成在半导体层上。 单晶硅层具有垂直于半导体层的沟道层。 存储单元与栅电极绝缘并与单晶硅层接触以形成电阻变化层。
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公开(公告)号：KR100962115B1
公开(公告)日：2010-06-10
申请号：KR1020070067850
申请日：2007-07-06
Applicant: 삼성전자주식회사
IPC: H04B7/26
CPC classification number: H04W52/243 , H04W52/343 , H04W52/346
Abstract: 본 발명은 무선인지 통신시스템에서 공동 전력제어를 위한 방법 및 장치에 관한 것으로, 무선인지 시스템에서 전력제어 방법에 있어서, 적어도 하나 이상의 단말들에 대해서 채널 스케줄링과 제 1 전력제어를 수행하는 과정과, 상기 적어도 하나 이상의 단말들이 제한구역 내에 존재하는지를 확인하여, 상기 제한구역 내에 존재하는 단말들이 기존시스템으로 간섭을 일으키는지를 판단하는 과정과, 상기 제한구역 내에 있는 서비스 단말들에 할당된 전력이 최대 허용가능한 간섭레벨 이하가 되도록 전력을 할당하는 제 2 전력제어를 수행하는 과정을 포함하여, 기존시스템에 간섭을 최소화하며 주파수대역을 공유하여 사용할 수 있는 이점이 있다.
무선인지(Cognitive Radio: CR), 제한구역(Constraint Area), 전력 할당, 스케줄링, 공동 전력제어(Joint Power Control).Abstract translation: 提供一种用于在认知无线电无线通信系统中控制功率的装置和方法，所述方法包括：对至少一个终端执行信道调度和第一功率控制; 检查所述至少一个终端是否存在于约束区域内，以及确定所述约束区域内的所述至少一个终端是否对现有系统造成干扰; 以及执行次级功率控制，使得分配功率可以小于最大可容忍干扰。
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