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公开(公告)号：KR1020060126157A
公开(公告)日：2006-12-07
申请号：KR1020050047857
申请日：2005-06-03
Applicant: 삼성전자주식회사
IPC: H01L21/324
CPC classification number: C23C16/45544 , C23C16/4401
Abstract: A vertical diffusion furnace is provided to prevent aluminum powder generated in forming Al2O3 from being blown to a wafer loaded into a boat by mounting a flange cover on a flange of a vertical diffusion furnace. A vertical diffusion furnace includes a flange(22) for mounting a single tube(12) to avoid diffusion of powder. A flange cover(28) is mounted on the flange so that aluminum powder is prevented from being diffused to a wafer loaded into the single tube during the fabricating process. The flange cover is made of quartz.
Abstract translation: 提供一种垂直扩散炉，用于防止在形成Al 2 O 3时产生的铝粉末通过将法兰盖安装在垂直扩散炉的凸缘上而被吹送到装载在船上的晶片上。 垂直扩散炉包括用于安装单管（12）以避免粉末扩散的凸缘（22）。 法兰盖（28）安装在凸缘上，从而防止在制造过程中铝粉被扩散到装载到单管中的晶片。 法兰盖由石英制成。
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公开(公告)号：KR100499171B1
公开(公告)日：2005-07-01
申请号：KR1020030049920
申请日：2003-07-21
Applicant: 삼성전자주식회사
IPC: H01L21/31
Abstract: 폴리실라잔을 포함하는 스핀온글래스(spin-on-glass, SOG)막을 기판에 적용한 후에 산화제용액을 이용하여 상기 스핀온글래스막을 산화 실리콘으로 전환시키는 반도체 장치 제조공정 중의 산화실리콘막 형성방법이 개시된다. 상기 산화제 용액은 오존, 과산화물, 과망간산염, 하이포아염소산염, 아염소산염, 염소산염, 과염소산염, 하이포아브롬산염, 아브롬산염, 브롬산염, 하이포아요오드산염, 아요오드산염, 요오드산염 및 강산을 포함하는 산화제 중 하나 이상의 산화제를 포함한다.
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23.发明公开
公开(公告)号：KR1020040072382A
公开(公告)日：2004-08-18
申请号：KR1020030008846
申请日：2003-02-12
Applicant: 삼성전자주식회사
IPC: H01L21/20
CPC classification number: H01L21/76837 , C08L83/16 , H01L21/02164 , H01L21/02222 , H01L21/02282 , H01L21/02337 , H01L21/3125 , H01L21/316 , H01L21/31695 , H01L21/76232 , H01L21/76802 , H01L21/76826 , H01L21/76828 , H01L21/823475 , H01L21/823481
Abstract: PURPOSE: A composition including perhydro-polysilazane is provided to fabricate the semiconductor device having a uniform insulating layer by using the perhydro-polysilazane of low molecular weight. CONSTITUTION: A composition of a semiconductor device includes perhydro-polysilazane(300). The perhydro-polysilazane is formed with polysilazane of the low molecular weight having the average molecular weight of 300 to 3000. The MWD(Molecular Weight Distribution) of the perhydro-polysilazane is 1.8 to 3. The perhydro-polysilazane and a solvent are used for fabricating the semiconductor device. The solvent includes xylene and di-butyl ether. The composition of the semiconductor device includes the perhydro-polysilazane of 5 to 30 weight percent and the solvent of 70 to 95 weight percent.
Abstract translation: 目的：提供包含全氢硅氮烷的组合物，通过使用低分子量的全氢化聚硅氮烷来制造具有均匀绝缘层的半导体器件。 构成：半导体器件的组合物包括全氢化聚硅氮烷（300）。 全氢化硅氮烷由平均分子量为300〜3000的低分子量聚硅氮烷形成。全羟基聚硅氮烷的MWD（分子量分布）为1.8〜3。全羟基硅氮烷和溶剂用于 制造半导体器件。 溶剂包括二甲苯和二丁基醚。 半导体器件的组成包括5至30重量％的全氢化聚硅氮烷和70至95重量％的溶剂。
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公开(公告)号：KR1020030094482A
公开(公告)日：2003-12-12
申请号：KR1020020031421
申请日：2002-06-04
Applicant: 삼성전자주식회사
IPC: H01L21/316
CPC classification number: H01L21/0217 , H01L21/02164 , H01L21/022 , H01L21/02321 , H01L21/0234 , H01L21/31116 , H01L21/3144 , H01L21/3145 , H01L21/8234
Abstract: PURPOSE: A method for manufacturing a semiconductor device is provided to be capable of preventing the defect generated at an oxide layer when forming the oxide layer at the upper portion of a silicon nitride layer by using a flow-fill process. CONSTITUTION: After forming a predetermined pattern at the upper portion of a semiconductor substrate(110), a silicon nitride layer(340) is formed at the upper portion of the resultant structure. Dangling bond is generated by partially disconnecting the bonding state between silicon and nitride on the surface of the silicon nitride layer. Then, a silicon oxide layer is formed at the upper portion of the resultant structure by carrying out a flow-fill process using silane compound. Preferably, an isotropic etching process is carried out on the surface of the silicon nitride layer by using remote plasma for generating the dangling bond.
Abstract translation: 目的：提供一种制造半导体器件的方法，其能够通过使用流动填充处理来防止在氮化硅层的上部形成氧化物层时在氧化物层处产生的缺陷。 构成：在半导体衬底（110）的上部形成预定图案之后，在所得结构的上部形成氮化硅层（340）。 通过部分断开氮化硅层表面上的硅和氮化物之间的结合状态来产生悬挂键。 然后，通过使用硅烷化合物进行流动填充处理，在所得结构的上部形成氧化硅层。 优选地，通过使用用于产生悬挂键的远程等离子体在氮化硅层的表面上进行各向同性蚀刻处理。
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Patent Agency Ranking
公开(公告)号：KR1020020029799A
公开(公告)日：2002-04-20
申请号：KR1020000060507
申请日：2000-10-14
Applicant: 삼성전자주식회사
IPC: H01L21/68
Abstract: PURPOSE: A wafer arm having a line displaying the position of a wafer is provided to reduce wafer scrap and loss time, by forming a marking or groove to precisely display the position of the wafer inside the wafer arm. CONSTITUTION: The wafer arm(12) has a wafer position display line which forms the line displaying the position where the wafer(10) is placed on the wafer arm in a transfer process. The position where the wafer is placed is precisely displayed by the marking or groove(14). The wafer is precisely placed on the wafer arm by the groove if the wafer arm is artificially traced when a wafer transfer error occurs.
Abstract translation: 目的：提供具有显示晶片位置的线的晶片臂，以通过形成标记或凹槽来精确地显示晶片在晶片臂内的位置来减少晶片废料和损耗时间。 构成：晶片臂（12）具有晶片位置显示线，其在传送过程中形成显示晶片（10）放置在晶片臂上的位置的线。 通过标记或槽（14）精确地显示放置晶片的位置。 如果在发生晶片传输错误时人工跟踪晶片臂，则通过凹槽将晶片精确地放置在晶片臂上。
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公开(公告)号：KR1020020008604A
公开(公告)日：2002-01-31
申请号：KR1020000042416
申请日：2000-07-24
Applicant: 삼성전자주식회사
IPC: H01L21/31
Abstract: PURPOSE: A method for forming an insulating layer of a semiconductor device is provided to form an insulating layer by using an HSQ(Hydrogen SilsesQuioxane) layer. CONSTITUTION: An HSQ layer(102) is formed on a semiconductor substrate(100). The HSQ layer(102) is formed by using a spin coating method. The HSQ layer(102) is exposed and oxidized by a solution including amine or a gas. A protective layer including a silica component is formed on the HSQ layer(102) by oxidizing the HSQ layer(102). The HSQ layer(102) is protected by the protective layer including the silica component. The amine is removed from a surface of the HSQ layer by performing a cleaning process. A curing process is performed under a nitrogen gas atmosphere. A photo-resist layer is formed on the protective layer. A photo-resist pattern is formed by patterning the photo-resist layer. An opening(106) is formed by etching the protective layer and the HSQ layer. The photo-resist pattern is removed by performing an ashing process.
Abstract translation: 目的：提供一种用于形成半导体器件的绝缘层的方法，以通过使用HSQ（氢化硅氧烷）层形成绝缘层。 构成：在半导体衬底（100）上形成HSQ层（102）。 HSQ层（102）通过使用旋涂法形成。 HSQ层（102）被包括胺或气体的溶液暴露并氧化。 通过氧化HSQ层（102），在HSQ层（102）上形成包含二氧化硅成分的保护层。 HSQ层（102）由包括二氧化硅组分的保护层保护。 通过进行清洗处理，从HSQ层的表面除去胺。 在氮气气氛下进行固化处理。 在保护层上形成光刻胶层。 通过图案化光致抗蚀剂层形成光刻胶图案。 通过蚀刻保护层和HSQ层形成开口（106）。 通过灰化处理去除光刻胶图案。
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公开(公告)号：KR100161417B1
公开(公告)日：1999-02-01
申请号：KR1019950020391
申请日：1995-07-11
Applicant: 삼성전자주식회사
IPC: H01L21/223
CPC classification number: C30B31/16
Abstract: 본 발명은 가스 흐름이 개선된 종형확산로에 관한 것으로, 종형 석영튜브관 내의 상부까지 연장되어 종형 석영튜브관 내에 적재된 웨이퍼들중 가장 높은 위치에 적재된 웨이퍼의 상부에 수소가스를 공급하는 주입관과, 종형 석영튜브관 내의 최하부에 위치하는 웨이퍼보다 낮게 위치하도록 종형 석영튜브관의 하부측벽을 직접 관통하여 종형 석영튜브관 내에 질소 가스를 공급하는 가스유입구, 및 가스유입구과 마주보는 위치에 설치된 가스배출구를 구비함으로써, 종형 석영튜브관 내에 유입된 수소가스가 석영튜브관내에서 와류현상을 일으키지 않고 안정된 수소가스층을 형성하는 것을 특징으로 한다
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公开(公告)号：KR1019970008336A
公开(公告)日：1997-02-24
申请号：KR1019950020391
申请日：1995-07-11
Applicant: 삼성전자주식회사
IPC: H01L21/223
Abstract: 소정의 반응에 필요한 안정된 수소가스층을 얻기 위해, 종래의 종형확산로의 가스유입관을 제거하고 대신 가스유입구를 가스배출구에 대응하게 석영튜브관 외벽에 형성함으로써, 유입된 수소가스가 석영튜브관 내에서 하부에서 상부로 이동하게 한다. 이에 의해 종래의 종형확산로가 가지는 반응가스의 와류가 억제됨과 동시에 가스유입관으로 인한 각종 문제점을 근본적으로 치유할 수 있다.
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公开(公告)号：KR101725446B1
公开(公告)日：2017-04-12
申请号：KR1020110084475
申请日：2011-08-24
Applicant: 삼성전자주식회사
IPC: H01L21/8242 , H01L27/108 , H01L21/8247 , H01L27/115
CPC classification number: H01L21/76897 , H01L21/02164 , H01L27/10855 , H01L27/10876 , H01L27/10885 , H01L27/10888 , H01L27/10894
Abstract: 반도체장치의제조방법이제공된다. 이방법은기판내에활성영역들을정의하는소자분리막을형성하는것, 기판상에제 1 방향으로활성영역들및 소자분리막을가로지르는도전성구조체들을형성하는것, 도전성구조체들을갖는기판의프로파일에따라계면층을형성하는것, 및계면층이형성된기판상에도전성구조체들을덮는제 1 절연층을형성하는것을포함한다. 제 1 절연층은유동성화학적기상증착방식으로형성되고, 그리고계면층은제 1 절연층을형성하는과정에서도전성구조체와제 1 절연층사이의계면에서발생하는인장력을감소시키는것을특징으로한다.
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