公开(公告)号：KR1020090008009A

公开(公告)日：2009-01-21

申请号：KR1020070071285

申请日：2007-07-16

Applicant: 삼성전자주식회사

Inventor： 정현종 ,  정란주 ,  서순애 ,  김동철 ,  이장원 ,  김언정

IPC: G01R33/00

CPC classification number: G01R33/0047 ,  G01R27/02 ,  G01R33/0023 ,  G01R33/0052

Abstract: A magnetic field sensor and a magnetic field measurement method using the same are provided to operate the magnetic field sensor at a room temperature by using two dimension solid as a conductive line and conductive loop. A magnetic field sensor comprises a device. The device has at least one conductive lines(10,20) and at least one conductive loop(30). The conductive loop is connected to the conductive line. The conductive line and conductive loop comprise two dimension solid. The conductive line and conductive loop comprise at least one of carbon, BN(Boron Nitride), BSCCO(Bismuth Strontium Calcium Copper Oxide), CdTe(Cadmium Telluride) and NbSe 2(Niobium Selenide). The two dimension solid comprises at least one of graphene, a single layer of BN, a half layer of BSCCO, a single layer of CdTe and a single layer of NbSe2.

Abstract translation: 提供磁场传感器和使用其的磁场测量方法，通过使用二维固体作为导电线路和导电回路来在室温下操作磁场传感器。 磁场传感器包括一个装置。 该装置具有至少一个导线（10,20）和至少一个导电回路（30）。 导电回路连接到导线。 导线和导电环包括二维固体。 导电线和导电环包含碳，BN（氮化硼），BSCCO（铋锶钙氧化铜），CdTe（碲化镉）和NbSe 2（硒化铌）中的至少一种。 二维固体包括石墨烯，单层BN，半层BSCCO，单层CdTe和单层NbSe2中的至少一种。

公开(公告)号：KR1020080109549A

公开(公告)日：2008-12-17

申请号：KR1020070058009

申请日：2007-06-13

Applicant: 삼성전자주식회사

Inventor： 정현종 ,  정란주 ,  서순애 ,  김동철 ,  이장원

IPC: H01L29/78

CPC classification number: H01L29/18 ,  H01L21/823807 ,  H01L27/11807 ,  H01L29/16 ,  H01L29/1606 ,  H01L29/2003 ,  H01L29/2203 ,  H01L29/7606 ,  H01L29/7781 ,  H01L29/78681 ,  H01L29/78684 ,  H01L29/7869 ,  H01L29/78618 ,  H01L29/78696

Abstract: A field effect transistor and the logic circuit using the ambipolar material is provided to facilitate forming area-source, drain region and channel region by patterning the ambipolar property material consisting of monolayer on the top of the substrate transistor. A field effect transistor comprises an ambipolar layer(120), a gate electrode(130), and an insulating layer(112). The ambipolar layer comprises an area-source(121) and drain region(122), and a channel region(123) of the interval. The ambipolar layer area-source, and the drain region and channel region are integrately formed. The gate electrode is formed in the channel region. The insulating layer isolates the gate electrode from the ambipolar layer. The width of the drain region and area-source is broader than the channel region.

Abstract translation: 提供场效应晶体管和使用双极材料的逻辑电路，以通过在衬底晶体管的顶部上构图由单层组成的双极性特性材料来形成区域源极，漏极区域和沟道区域。 场效应晶体管包括双极层（120），栅电极（130）和绝缘层（112）。 双极层包括区域源（121）和漏极区（122）以及间隔的沟道区（123）。 双极层面积源，漏极区域和沟道区域整合形成。 栅电极形成在沟道区中。 绝缘层将栅电极与双极层隔离。 漏极区域和面积源的宽度比通道区域宽。

公开(公告)号：KR1020080048315A

公开(公告)日：2008-06-02

申请号：KR1020060118560

申请日：2006-11-28

Applicant: 삼성전자주식회사

Inventor： 서순애 ,  박영수 ,  정란주 ,  이명재 ,  김동철 ,  안승언

IPC: H01L27/115 ,  H01L21/8247

CPC classification number: H01L45/165 ,  H01L27/2436 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/146 ,  G11C13/0004 ,  H01L45/1616 ,  H01L45/1625

Abstract: A method for manufacturing a resistance random access memory device is provided to remove the variation of resistances of a resistance layer by maintaining constantly a current path of the resistance random access memory device. A resistance random access memory device includes a lower electrode(21), a resistance layer(22) including a metal dopant formed on the lower electrode, and an upper electrode(23) formed on the resistance layer. The metal dopant is composed of a transition metal. The resistance layer is composed of a transition metal compound. The transition metal compound includes one material of a Ni oxide, a Ti oxide, an Hf oxide, a Zr oxide, a Zn oxide, a W oxide, a Co oxide, or an Nb oxide. The resistance layer is composed of the Ni oxide including a Ni dopant.

Abstract translation: 提供一种用于制造电阻随机存取存储器件的方法，以通过不断地维持电阻随机存取存储器件的电流路径来消除电阻层的电阻的变化。 电阻随机存取存储器件包括下电极（21），包括形成在下电极上的金属掺杂剂的电阻层（22）和形成在电阻层上的上电极（23）。 金属掺杂剂由过渡金属组成。 电阻层由过渡金属化合物构成。 过渡金属化合物包括Ni氧化物，Ti氧化物，Hf氧化物，Zr氧化物，Zn氧化物，W氧化物，Co氧化物或Nb氧化物的一种材料。 电阻层由包含Ni掺杂剂的Ni氧化物构成。

公开(公告)号：KR100721017B1

公开(公告)日：2007-05-22

申请号：KR1020050131856

申请日：2005-12-28

Applicant: 삼성전자주식회사

Inventor： 이진일 ,  이충만 ,  조성래 ,  박영림 ,  강상열 ,  정란주

IPC: H01L27/115

公开(公告)号：KR100590554B1

公开(公告)日：2006-06-19

申请号：KR1020040038205

申请日：2004-05-28

Applicant: 삼성전자주식회사

Inventor： 정란주 ,  류연택

IPC: H01L21/205

CPC classification number: C23C16/45582 ,  C23C16/4412 ,  C23C16/45525 ,  C23C16/45544 ,  C23C16/4582

Abstract: 반응용기 및 시편홀더의 구조가 개선된 단원자층 증착장치가 개시된다. 개시된 단원자층 증착장치는, 상판과 하판을 구비하고 내부에 반응실이 마련되는 반응용기 및 상기 반응실 내부에 장입되는 시편을 지지하는 시편홀더를 구비한다.
상판에는 반응실을 정의하는 소정 깊이의 바닥 및 이 둘레의 측벽이 형성되고, 측벽에는 가스유입구와 가스배출구가 마련된다.
시편홀더는 시편이 장착되는 지지판과 지지판의 타측면에서 연장되는 통상체의 지지스커트를 구비하는 몸체 및 상기 몸체의 내부에 삽입되어 시편을 지지하는 통상체의 지지부재를 구비하고, 상기 지지판에는 박막 성장이 이루어지는 상기 시편의 표면이 노출되는 윈도우가 형성된다.

公开(公告)号：KR1020050001793A

公开(公告)日：2005-01-07

申请号：KR1020030042128

申请日：2003-06-26

Applicant: 삼성전자주식회사

Inventor： 이재철 ,  임창빈 ,  정란주

IPC: H01L21/66

CPC classification number: H01L21/0228 ,  C23C16/45525 ,  C23C16/52 ,  H01L21/02181 ,  H01L21/3141

Abstract: PURPOSE: A method of analyzing a single ALD(Atomic Layer Deposition) process in real time is provided to minimize fraction defective of samples and to reduce time and costs necessary to perform an additional analysis by checking a state of an atomic layer while depositing the atomic layer. CONSTITUTION: A substrate is transferred into a reaction chamber(11). An atomic layer is deposited on the substrate by injecting repeatedly a source gas(13). By analyzing several states of the atomic layer, whether failure exists on the atomic layer is determined in real time.

Abstract translation: 目的：提供一种实时分析单个ALD（原子层沉积）过程的方法，以最小化样本的部分缺陷，并通过在沉积原子层的同时检查原子层的状态来减少执行附加分析所需的时间和成本 层。 构成：将基底转移到反应室（11）中。 原子层通过重复注入源气体（13）而沉积在衬底上。 通过分析原子层的几个状态，可以实时确定原子层上存在的故障。