公开(公告)号：KR1020100112878A

公开(公告)日：2010-10-20

申请号：KR1020090031396

申请日：2009-04-10

Applicant: 삼성전자주식회사

Inventor： 차대길 ,  포썸,에릭알. ,  진영구 ,  박윤동 ,  황수정

IPC: H01L27/146

CPC classification number: H01L31/112 ,  H01L27/14609 ,  H04N5/335 ,  H04N5/374

Abstract: PURPOSE: An image sensor with high sensitivity is provided to obtain a high conversion gain by functioning as a photoelectric conversion device and a sensing device through a single electron field effect transistor. CONSTITUTION: An n type well(210) is formed on a p type sub substrate. A source region(220) and a drain region(230) are formed on the n type well. A channel region(250) connects the source region to the drain region. A gate region(240) is formed on the lower side of the channel region. The n type well is an impurity region doped with lower density than the gate region.

Abstract translation: 目的：提供高灵敏度的图像传感器，通过用作光电转换装置和通过单电子场效应晶体管的感测装置来获得高转换增益。 构成：在p型副基板上形成n型阱（210）。 源极区（220）和漏极区（230）形成在n型阱上。 沟道区域（250）将源极区域连接到漏极区域。 栅极区域（240）形成在沟道区域的下侧。 n型阱是掺杂比栅极区更低密度的杂质区。

公开(公告)号：KR1020100006059A

公开(公告)日：2010-01-18

申请号：KR1020080066222

申请日：2008-07-08

Applicant: 삼성전자주식회사

Inventor： 성정헌 ,  조중래 ,  김덕기 ,  황수정

IPC: H01L21/82

CPC classification number: H01L23/5252 ,  G11C17/18 ,  H01L2924/0002 ,  H01L2924/00

Abstract: PURPOSE: An electric fuse device and an operation method thereof are provided to improve programming pre/post resistance ratio and have simple structure and small size. CONSTITUTION: An electric fuse device comprises a fuse(100) and a drive component(200). The drive component is connected to the fuse and comprises a resistance change layer whose resistance is changed according to applied voltage. The resistance change layer has a metal-insulator transition property. The drive component comprises two electrodes and the resistance change layer between the two electrodes.

Abstract translation: 目的：提供一种电熔丝装置及其操作方法，以提高编程前/后电阻比，结构简单，体积小。 构成：电熔丝装置包括保险丝（100）和驱动部件（200）。 驱动部件连接到保险丝，并且包括其电阻根据施加的电压而改变的电阻变化层。 电阻变化层具有金属 - 绝缘体转移特性。 驱动部件包括两个电极和两个电极之间的电阻变化层。

公开(公告)号：KR1020090121012A

公开(公告)日：2009-11-25

申请号：KR1020080047094

申请日：2008-05-21

Applicant: 삼성전자주식회사

Inventor： 성정헌 ,  김덕기 ,  황수정

IPC: G11C29/04 ,  G11C5/14

CPC classification number: G11C29/787 ,  G11C17/16 ,  G11C17/18 ,  G11C29/808 ,  G11C2229/763

Abstract: PURPOSE: An electrical fuse device is provided to be used after completing the assembly of a package of a semiconductor chip. CONSTITUTION: An electrical fuse device includes plural fuses(10), a power source and a voltage controller. The power source applies programming voltage to the fuses, and the voltage controller is connected to the power source. The plural fuses are connected to the voltage controller in parallel, and the voltage controller includes a diode(30) of which break-down voltage is 1-5V. The voltage controller is prepared between the power source and the plural fuses.

Abstract translation: 目的：提供一种电熔丝装置，用于在完成半导体芯片封装的组装之后使用。 构成：电熔丝装置包括多个保险丝（10），电源和电压控制器。 电源对保险丝施加编程电压，电压控制器连接到电源。 多个保险丝并联连接到电压控制器，并且电压控制器包括击穿电压为1-5V的二极管（30）。 在电源和多个保险丝之间准备电压控制器。

公开(公告)号：KR1020090108457A

公开(公告)日：2009-10-15

申请号：KR1020080033880

申请日：2008-04-11

Applicant: 삼성전자주식회사

Inventor： 김덕기 ,  성정헌 ,  최상무 ,  황수정

IPC: H01L23/62

CPC classification number: H01L23/5252 ,  H01L29/78 ,  H01L2924/0002 ,  H01L2924/00

Abstract: PURPOSE: An anti-fuse is provided to exclude a separate programming transistor by including a transistor structure. CONSTITUTION: An anti-fuse includes a first conductor(100), a second conductor(200), a dielectric layer, and a diffusion layer(120). The first conductor and the second conductor are separated. The dielectric layer is included between the first conductor and the second conductor. The diffusion layer is included between the dielectric layer and one among the first conductor and the second conductor. The dielectric layer includes one of Al oxide, Si oxide, and Si nitride. The diffusion layer includes Cr.

Abstract translation: 目的：提供反熔丝以通过包括晶体管结构来排除单独的编程晶体管。 构成：反熔丝包括第一导体（100），第二导体（200），电介质层和扩散层（120）。 第一导体和第二导体分开。 介电层包括在第一导体和第二导体之间。 扩散层包括在介电层和第一导体和第二导体中之间。 电介质层包括Al氧化物，Si氧化物和Si氮化物中的一种。 扩散层包括Cr。

公开(公告)号：KR101565750B1

公开(公告)日：2015-11-05

申请号：KR1020090031396

申请日：2009-04-10

Applicant: 삼성전자주식회사

Inventor： 차대길 ,  포썸,에릭알. ,  진영구 ,  박윤동 ,  황수정

IPC: H01L27/146

CPC classification number: H01L31/112 ,  H01L27/14609 ,  H04N5/335 ,  H04N5/374

Abstract: 고감도이미지센서가제공된다. 고감도이미지센서는제1 도전형의기판내에형성된단전자트랜지스터(Single Electron Field Effect Transistor; SEFET)를포함하는픽셀을포함하며, 상기단전자트랜지스터는, 상기기판내에형성된제2 도전형의제1 웰; 상기제1 웰내에소정간격이격되어형성된제1 도전형의소스영역및 드레인영역; 상기소스영역및 드레인영역사이의제1 웰내에형성된제2 도전형게이트영역을포함한다.

公开(公告)号：KR1020110033567A

公开(公告)日：2011-03-31

申请号：KR1020090091113

申请日：2009-09-25

Applicant: 삼성전자주식회사

Inventor： 황수정 ,  포썸,에릭알. ,  진영구 ,  박윤동 ,  차대길

IPC: H01L27/146

CPC classification number: H04N5/3696 ,  H01L27/14621 ,  H01L27/14645 ,  H04N5/2257 ,  H04N5/332

Abstract: PURPOSE: An image sensor having a depth sensor is provided to increase the recombination of electrons and holes by forming a potential barrier to preventing the movement of electronics generated from the depth region in the lower part of a substrate. CONSTITUTION: In an image sensor having a depth sensor. A substrate(101) comprises a visible light recognition domain(I) and a non-visible light recognition domain(II). A first well(123a) and a second well(123b) of a first conductive type are formed in the non-visible light recognition domain. A first gate(122a) and a second gate(122b) apply voltage to the first well and the second well respectively. A photoelectric conversion element(110R,110G) is formed between the first gate and the second gate. The photoelectric conversion element comprises pinning layers(112R,112G) formed in the upper part of the substrate.

Abstract translation: 目的：提供具有深度传感器的图像传感器，以通过形成势垒来增加电子和空穴的复合，以防止从衬底下部的深度区域产生的电子元件的移动。 构成：在具有深度传感器的图像传感器中。 基板（101）包括可见光识别域（I）和不可见光识别域（II）。 第一导电类型的第一阱（123a）和第二阱（123b）形成在不可见光识别域中。 第一栅极（122a）和第二栅极（122b）分别向第一阱和第二阱施加电压。 光电转换元件（110R，110G）形成在第一栅极和第二栅极之间。 光电转换元件包括形成在基板上部的钉扎层（112R，112G）。

公开(公告)号：KR1020090112390A

公开(公告)日：2009-10-28

申请号：KR1020080038256

申请日：2008-04-24

Applicant: 삼성전자주식회사 ,  재단법인서울대학교산학협력재단

Inventor： 황수정 ,  김덕기 ,  주영창

IPC: H01L23/62

CPC classification number: H01L23/5256 ,  H01L2924/0002 ,  H01L2924/00

Abstract: PURPOSE: An electrical fuse element is used for various purposes by containing a fuse link which is electrically blown. CONSTITUTION: An electrical fuse element is comprised of a cathode(100) and an anode(200), and a fuse link. The cathode and the anode are separated from each other. The fuse link connects the cathode and the anode. The cathode includes the first area and the second part which is equipped between the first area and the fuse link. The width of the second part is wider than the width of the first area.

Abstract translation: 目的：电熔丝元件用于各种目的，包含电熔丝的熔丝。 构成：电熔丝元件由阴极（100）和阳极（200）以及熔断体构成。 阴极和阳极彼此分离。 熔丝连接阴极和阳极。 阴极包括设置在第一区域和熔丝连接点之间的第一区域和第二部分。 第二部分的宽度比第一区域的宽度宽。

公开(公告)号：KR1020090105420A

公开(公告)日：2009-10-07

申请号：KR1020080030859

申请日：2008-04-02

Applicant: 삼성전자주식회사

Inventor： 성정헌 ,  최상무 ,  김덕기 ,  황수정

IPC: G11C29/04

CPC classification number: G11C11/5692 ,  G11C17/16 ,  G11C2216/26 ,  H01L23/5252 ,  H01L27/112 ,  H01L27/11206 ,  H01L2924/0002 ,  H01L2924/00

Abstract: PURPOSE: A multi-level anti-fuse and an operating method thereof are provided to reduce a size of a chip by decreasing the number of sensors per the anti-fuse. CONSTITUTION: A multi-level anti-fuse includes at least three anti-fuses(100,200,300). At least three anti-fuses includes a plurality of anti-fuses which are connected in parallel and one anti-fuse serially connected to the parallel structure. The resistance of the parallel is lowered than the serially connected anti-fuse. The dielectric layers of the plurality of anti-fuses which are connected in parallel are formed with the different thickness and have different breakdown voltages.

Abstract translation: 目的：提供多级反熔丝及其操作方法，通过减少每个反熔丝的传感器的数量来减小芯片的尺寸。 规定：多级反熔丝至少包含三个防熔丝（100,200,300）。 至少三个抗熔丝包括并联连接的多个抗熔丝和与该并联结构串联连接的一个反熔丝。 并联的电阻比串联的反熔丝低。 并联连接的多个抗熔丝的电介质层以不同的厚度形成，具有不同的击穿电压。