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公开(公告)号：KR1020150083329A
公开(公告)日：2015-07-17
申请号：KR1020140002948
申请日：2014-01-09
Applicant: 삼성전자주식회사
CPC classification number: H01L33/145 , H01L33/002 , H01L33/025 , H01L33/08 , H01L33/18 , H01L33/24 , H01L33/42 , H01L33/486 , H01L33/52 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/48257 , H01L2224/73265 , H01L2924/181 , H01L2924/00014 , H01L2924/00012 , H01L2924/00
Abstract: 본발명의실시예에따른반도체발광소자는, 제1 도전형반도체베이스층, 및제1 도전형반도체베이스층상에서로이격되어형성되며, 각각제1 도전형반도체코어, 활성층, 전하차단층및 제2 도전형반도체층을포함하는복수의나노발광구조물들을포함하고, 제1 도전형반도체코어는결정학적방향이서로다른제1 및제2 결정면을가지며, 전하차단층은제1 농도의불순물을포함하고, 제2 도전형반도체층은제2 농도의불순물을포함하며, 제1 농도는제2 농도의절반이하이다.
Abstract translation: 根据本发明的实施例，半导体发光器件包括：第一导电半导体基底层; 以及多个纳米结构，其形成为在第一导电半导体基底层上彼此分离，并且分别包括第一导电半导体芯，有源层，电荷阻挡层和第二导电半导体层。 第一导电半导体芯具有不同结晶方向的第一和第二晶面。 电荷阻挡层包括第一浓度的杂质，第二导电半导体层包括第二浓度的杂质。 第一浓度小于或等于第二浓度的一半。
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公开(公告)号：KR1020150064413A
公开(公告)日：2015-06-11
申请号：KR1020130149098
申请日：2013-12-03
Applicant: 삼성전자주식회사
Abstract: 본발명의일 실시예에따른나노구조반도체발광소자는, 발광영역과비발광영역을갖는기판; 및상기발광영역에배치되며, 제1 도전형반도체를포함하는나노코어, 상기노 코어상에순차적으로형성되는활성층과제2 도전형반도체층을포함하는복수의나노발광구조물; 을포함하고, 상기발광영역은제1 영역과제2 영역을포함하고, 상기제1 영역은상기제2 영역보다상기비발광영역에인접하며, 상기제1 영역에배치되는복수의나노발광구조물사이의거리는상기제2 영역에배치되는복수의나노발광구조물사이의거리보다작다.
Abstract translation: 根据本发明的一个实施方案的纳米结构半导体发光器件包括：衬底，其包括发光区域和非发光区域;以及多个纳米发光结构，其布置在所述发光区域上并且包括纳米 芯包括依次形成在纳米芯上的第一导电半导体和有源层和第二导电半导体层。 发光区域包括第一区域和第二区域。 与第二区域相比，第一区域更接近非发射区域。 布置在第一区域上的纳米发光结构之间的距离比布置在第二区域上的纳米发光结构之间的距离短。
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Patent Agency Ranking
公开(公告)号：KR1020150050284A
公开(公告)日：2015-05-08
申请号：KR1020130164521
申请日：2013-12-26
Applicant: 삼성전자주식회사
CPC classification number: H01L33/08 , H01L33/0079 , H01L33/24 , H01L33/145
Abstract: 본발명의일 실시형태는, 제1 도전형반도체로이루어진베이스층과, 상기베이스층상에형성되며, 상기베이스층의일부영역이노출된복수의개구를갖는절연막과, 상기베이스층의노출된영역각각에형성되며, 제1 도전형반도체로이루어지고, 그측면의결정면과다른결정면을갖는상단부를갖는나노코어와, 상기나노코어의표면에순차적으로형성된활성층과제2 도전형반도체층과, 상기활성층과상기나노코어사이에위치하도록상기나노코어의상단부에형성된전류차단중간층을포함하는나노구조반도체발광소자를제공한다.
Abstract translation: 根据本发明的实施例，纳米结构半导体发光器件包括由第一导电型半导体制成的基极层，形成在基底层上的绝缘层，并且具有暴露于基底层的一部分的开口，纳米孔 其形成在基底层的露出区域中，由第一导电型半导体制成，具有与侧面不同的结晶面的上端部，有源层和第二导电型半导体层， 在纳米孔的表面上依次形成电流阻挡中间层，其形成在纳米孔的上端部分中，位于活性层和纳米孔之间。
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公开(公告)号：KR1020130131217A
公开(公告)日：2013-12-03
申请号：KR1020130008121
申请日：2013-01-24
Applicant: 삼성전자주식회사
CPC classification number: H01L33/04 , H01L33/20 , H01L33/38 , H01L33/62 , H01L2924/12041
Abstract: The present invention relates to a semiconductor light-emitting device, comprising: a substrate; multiple nanostructures, each of which includes a first conduction-type semiconductor layer core, an activation layer, and a second conduction-type semiconductor layer, spaced out on the substrate, a filler filling the gap between the multiple nanostructures and formed lower than the nanostructures; and a semiconductor light-emitting device, which includes an electrode covering the upper part and part of the sides of the nanostructures and electrically-connected to the second conduction-type semiconductor layer.
Abstract translation: 本发明涉及一种半导体发光器件，包括：衬底; 多个纳米结构，每个纳米结构包括在衬底上间隔开的第一导电型半导体层芯，激活层和第二导电型半导体层，填充多个纳米结构之间的间隙并形成为低于纳米结构的填料 ; 以及半导体发光器件，其包括覆盖所述纳米结构的上部和一部分侧边并电连接到所述第二导电型半导体层的电极。
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公开(公告)号：KR1020160053329A
公开(公告)日：2016-05-13
申请号：KR1020140151379
申请日：2014-11-03
Applicant: 삼성전자주식회사
IPC: H01L33/20
CPC classification number: H01L33/24 , H01L33/007 , H01L33/08 , H01L33/20 , H01L33/32 , H01L33/42 , H01L33/44 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/48257 , H01L2224/73265 , H01L2924/181 , H01L2924/00014 , H01L2924/00012 , H01L2924/00
Abstract: 본발명의실시예에따른반도체발광소자는, 제1 도전형반도체로이루어진베이스층, 베이스층상에서로이격되어배치되며, 각각제1 도전형반도체코어, 활성층및 제2 도전형반도체층을포함하는복수의나노발광구조물들을포함하고, 제1 도전형반도체코어는, 베이스층으로부터상부로연장되는로드층및 로드층상에배치되는캡핑층을포함하고, 복수의나노발광구조물들중 적어도일부에서로드층들및 캡핑층들의높이는서로다르다.
Abstract translation: 根据本发明的实施例，半导体发光器件包括：由第一导电型半导体构成的基极层; 以及设置在所述基底层上以彼此间隔开的多个发光纳米结构，每个所述发光纳米结构包括第一导电型半导体芯，有源层和第二导电类型半导体层。 第一导电型半导体芯包括从基层延伸到上部的棒层和设置在棒层上的覆盖层。 在发光纳米结构的至少一部分中，棒层的高度和覆盖层的高度是不同的。 发光纳米结构之间的宽度的变化减小，因此半导体发光器件具有改善的发光波长分布和发光效率。
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公开(公告)号：KR1020140095392A
公开(公告)日：2014-08-01
申请号：KR1020130008312
申请日：2013-01-24
Applicant: 삼성전자주식회사
CPC classification number: H01L33/10 , H01L33/007 , H01L33/20 , H01L33/24 , H01L33/32
Abstract: The present invention relates to a nitride semiconductor light emitting device. The light emitting device includes a substrate; a multi-layered structure which is formed on the substrate and includes alternately laminated nitride single crystal layers of a first and a second layers having refractive indexes different from each other; a protrusion structure which is formed on an upper surface of the multi-layered structure and is made of a light transmitting material; and a light emitting structure which is formed on the multi-layered structure having the light transmitting protrusion structure formed thereon, and includes a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer. According to the present invention, the light extraction efficiency is increased by the light emitting device.
Abstract translation: 本发明涉及一种氮化物半导体发光器件。 发光装置包括：基板; 一种多层结构，其形成在所述基板上，并且包括具有彼此不同的折射率的第一和第二层的交替层叠的氮化物单晶层; 突起结构，其形成在所述多层结构的上表面上并且由透光材料制成; 以及形成在其上形成有透光突起结构的多层结构上的发光结构，并且包括第一导电半导体层，有源层和第二导电半导体层。 根据本发明，通过发光装置提高光提取效率。
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公开(公告)号：KR1020130130543A
公开(公告)日：2013-12-02
申请号：KR1020120054444
申请日：2012-05-22
Applicant: 삼성전자주식회사
Abstract: According to an embodiment of the present invention, the present invention provides a light emitting device which minimizes the number of times that light emitted sideward from a vertical light emitting device passes through a light absorption member and improves light emitting efficiency by comprising; a lower layer; multiple vertical light emitting structures placed on the lower layer; a conductive member surrounding at least a part of the multiple vertical light emitting structures; and multiple reflection members which are arranged between the multiple vertical light emitting structures and reflect the light emitted sideward from the multiple vertical light emitting structures.
Abstract translation: 根据本发明的实施例，本发明提供了一种发光装置，其使从垂直发光装置向侧方发出的光通过光吸收构件的次数最小化，并且通过包括提高发光效率， 下层 放置在下层上的多个垂直发光结构; 围绕所述多个垂直发光结构的至少一部分的导电构件; 以及多个反射构件，其布置在多个垂直发光结构之间并且反射从多个垂直发光结构向侧面发射的光。
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