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公开(公告)号：KR100874588B1
公开(公告)日：2008-12-16
申请号：KR1020070089905
申请日：2007-09-05
Applicant: 성균관대학교산학협력단
IPC: H01L23/12
CPC classification number: H01L24/13 , H01L21/4853 , H01L24/11 , H01L2224/0231 , H01L2224/0401 , H01L2224/05166 , H01L2224/05644 , H01L2224/05647 , H01L2224/1147 , H01L2224/13099 , H01L2224/13144 , H01L2224/1411 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01019 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/01072 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/09701 , H01L2924/10329 , H01L2924/3025 , H01L2924/00014
Abstract: The method of manufacturing the flip-chip is provided to lower the material cost and process cost by acting the metal seed layer as the metal pattern for the electrical connection. The method of manufacturing flip chip comprises as follows. A step is for forming the seed layer on the substrate(10). A step is for coating and patterning photoresist or the dry film. A step is for forming the gold bump(18) by performing electroplating. A step is for patterning the seed layer. A step is for forming the insulating layer(12) on the seed layer and gold bump. A step is for patterning the insulating layer.
Abstract translation: 提供了制造倒装芯片的方法，通过使金属种子层作为用于电连接的金属图案来降低材料成本和工艺成本。 制造倒装芯片的方法包括如下。 步骤是在基底（10）上形成种子层。 步骤是用于涂覆和图案化光刻胶或干膜。 通过进行电镀来形成金凸块（18）的步骤。 步骤是图案化种子层。 步骤是在种子层上形成绝缘层（12）和金凸块。 图案化绝缘层的步骤。
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公开(公告)号：KR100871066B1
公开(公告)日：2008-11-27
申请号：KR1020070073321
申请日：2007-07-23
Applicant: 성균관대학교산학협력단
CPC classification number: H01L2224/13
Abstract: The method for manufacturing the high intensity solder bump is provide to improve the electrical mechanical reliability by formation of the metal mini bump. The method for fabricating a high intensity solder bump is provided. A step is for forming the thin conductive film(20) in the substrate. A step is for forming the insulating layer(22) on the thin conductive film. A step is for coating photoresist or the dry film and patterning. A step is for removing photoresist or the dry film by etching the insulating layer. A step is for forming a mini bump. A step is for reflowing the solder to form the solder bump. The mini bump is made of the CuNi nickel - lead or the gold by using electroplating or the electroless plating. The height of the mini bump is 100 micro meters or over 10 micro meters. The substrate is formed with a silicon wafer compound semiconductor wafer quartz glass or a ceramic material.
Abstract translation: 提供高强度焊料凸块的制造方法是通过形成金属微型凸块来提高电气机械可靠性。 提供了制造高强度焊料凸块的方法。 步骤是在衬底中形成薄导电膜（20）。 在薄导电膜上形成绝缘层（22）的步骤。 一步是涂覆光致抗蚀剂或干膜并进行图案化。 通过蚀刻绝缘层来去除光致抗蚀剂或干膜的步骤。 一个步骤是形成一个迷你凸块。 一个步骤是回流焊料以形成焊料凸块。 迷你凸块由CuNi镍铅或金通过使用电镀或无电镀制成。 迷你凸块的高度为100微米或超过10微米。 基板由硅晶片化合物半导体晶片石英玻璃或陶瓷材料形成。
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公开(公告)号：KR1020170103176A
公开(公告)日：2017-09-13
申请号：KR1020160025602
申请日：2016-03-03
Applicant: 성균관대학교산학협력단
Abstract: 본발명은전기화학적마이그레이션을이용한전자회로상의단선을자가복원하는방법에관한것이고, 이러한방법에의해자가복원된전자회로에관한것이다. 본발명의일 실시예에따른전기화학적마이그레이션을이용한전자회로상의단선을자가복원하는방법은, 단선이발생된전자회로를준비하는단계; 상기단선이발생된전자회로의양 전극사이에용액을떨어뜨리는단계; 및상기용액을떨어뜨린후 전압을인가하는단계를포함한다.
Abstract translation: 本发明涉及一种使用电化学迁移来自我恢复电子电路断开的方法以及通过这种方法自我恢复的电子电路。 根据本发明实施例的使用电化学迁移来自我恢复电子电路断开的方法包括：准备发生断开的电子电路; 在产生断线的电子电路的两个电极之间滴下溶液; 并放下解决方案并施加电压。
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Patent Agency Ranking
公开(公告)号：KR1020170087183A
公开(公告)日：2017-07-28
申请号：KR1020160006870
申请日：2016-01-20
Applicant: 성균관대학교산학협력단
Abstract: 본발명은다층고전도인쇄전자회로소재및 이를이용한신축성임베디드회로기판의제조방법에관한것이다. 본발명에따르면, 기판에인쇄된전자회로를유연성, 신축성, 투명성을갖는유동성폴리머내부에전사시켜임베딩된형태로유연하고신축성있는회로기판을제공하게된다. 본발명에따르면, 희생기판을이용하여희생기판상에인쇄회로를인쇄하고먼저소결을한 이후에인쇄회로를유동성폴리머에임베딩시킴으로써, 인쇄회로의박리발생을방지하고, 기판의손상을발생시키지않으면서, 신뢰성이우수한신축성임베디드인쇄회로기판을제공한다.
Abstract translation: 本发明还涉及用于制备所述印刷材料的多层经典电子电路及使用该嵌入的柔性电路板的方法。 根据本发明，它是印刷在液体聚合物在所述基板上的电子电路被转移到内部具有可挠性，弹性，透明性和嵌入型柔性和弹性电路板。 根据本发明，如果通过印刷在牺牲衬底上的印刷电路中，通过第一嵌入液体聚合物中的烧结后的印刷电路，使用牺牲衬底的防止发生在印刷电路脱层，并造成损坏到衬底 本发明提供了一种柔性和高度柔性的印刷电路板。
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公开(公告)号：KR101430344B1
公开(公告)日：2014-08-14
申请号：KR1020130013057
申请日：2013-02-05
Applicant: 성균관대학교산학협력단
IPC: C01B31/02
CPC classification number: C01B32/182
Abstract: The present invention relates to a manufacturing method for a metal-graphene composite and a metal-graphene composite manufactured thereby. The manufacturing method for a metal-graphene composite according to an embodiment of the present invention comprises a step of processing a groove on a metal member; a step of inserting graphene powder into the groove; and a step of performing friction stirring process along the groove.
Abstract translation: 本发明涉及一种由此制造的金属 - 石墨烯复合材料和金属 - 石墨烯复合材料的制造方法。 根据本发明的实施方案的金属 - 石墨烯复合材料的制造方法包括在金属构件上加工凹槽的步骤; 将石墨烯粉末插入凹槽中的步骤; 以及沿着所述槽进行摩擦搅拌处理的步骤。
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公开(公告)号：KR101278097B1
公开(公告)日：2013-06-24
申请号：KR1020110053767
申请日：2011-06-03
Applicant: 성균관대학교산학협력단
IPC: B23K20/12
Abstract: 본 발명은 마찰교반 접합방법 및 이를 이용한 접합 구조체에 관한 것이다. 본 발명은 마찰교반 접합을 위해 서로 밀착된 접합재의 일면에 삽입홈을 형성하는 단계; 삽입홈에 접합 물질을 삽입하는 단계; 접합 물질을 덮도록 상기 접합재 일면에 테이프를 부착하는 단계; 삽입홈이 형성된 접합재 일면의 반대면을 마찰교반하는 단계를 포함한다. 이와 같은 본 발명에 의하면, 접합부의 복합소재 및 합금화가 가능한 마찰교반 접합방법을 이용하여 접합 시에 삽입된 접합 물질이 외부로 유출되지 않고 접합부의 결함 또한 방지할 수 있다.
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29.发明公开
公开(公告)号：KR1020130016761A
公开(公告)日：2013-02-19
申请号：KR1020110078863
申请日：2011-08-09
Applicant: 성균관대학교산학협력단
IPC: B23K20/12 , B23K103/18
Abstract: PURPOSE: A friction stir process method capable of producing composition or alloy and composition or alloy produced by said method are provided to produce a composition or an alloy from a desired portion of a material. CONSTITUTION: A friction stir process method capable of producing composition or alloy comprises a step of generating a groove in a structure(100); a step of sticking a tape(130) on the filled groove after filling the groove with a different material(120) from the structure; a step of turning over the structure for the taped portion to face down; a step of performing a friction stir process on the opposite side of the taped portion along the groove on the structure. The tape may be made of the same material of the structure or a similar material of the structure. A step of removing burr on the surface of the structure may be included following the friction stir process.
Abstract translation: 目的：提供能够产生由所述方法制备的组合物或合金和组合物或合金的摩擦搅拌工艺方法以从材料的所需部分制备组合物或合金。 构成：能够生产组合物或合金的摩擦搅拌工艺方法包括在结构（100）中产生凹槽的步骤; 在用所述结构的不同材料（120）填充所述凹槽之后，将带（130）粘贴在所述填充凹槽上的步骤; 将带状部分的结构翻转成朝下的步骤; 沿着结构体上的凹槽在带状部分的相对侧进行摩擦搅拌处理的步骤。 带可以由结构的相同材料或结构的相似材料制成。 在摩擦搅拌过程之后可以包括去除结构表面上的毛刺的步骤。
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公开(公告)号：KR1020120134678A
公开(公告)日：2012-12-12
申请号：KR1020110053767
申请日：2011-06-03
Applicant: 성균관대학교산학협력단
IPC: B23K20/12
Abstract: PURPOSE: A friction stir welding method and a coupling structure using the same are provided to prevent the leakage of a filler material and defects in a weld zone. CONSTITUTION: A friction stir welding method comprises the steps of: forming an insertion groove(14) on one side of welded materials(10) butte against each other, inserting a filler material to the insertion groove, attaching tape(30) to one side of the welded materials to cover the filler material, and friction-stir-welding the opposite side of the welded materials to the insertion groove, wherein the filler material is different from the welded materials and the tape is the same material as the filler material.
Abstract translation: 目的：提供一种摩擦搅拌焊接方法和使用该摩擦搅拌焊接方法的联接结构，以防止填充材料的泄漏和焊接区域中的缺陷。 构成：摩擦搅拌焊接方法包括以下步骤：在焊接材料（10）的一侧上形成插入槽（14），将填充材料插入到插入槽中，将带（30）连接到一侧 的焊接材料覆盖填充材料，并且将焊接材料的相对侧摩擦搅拌焊接到插入槽，其中填充材料与焊接材料不同，并且带是与填充材料相同的材料。
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