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公开(公告)号：KR1020170049199A
公开(公告)日：2017-05-10
申请号：KR1020150150284
申请日：2015-10-28
Applicant: 삼성전자주식회사
Inventor： 이승환
IPC: H04N21/422
CPC classification number: H04N21/42204 , H04N21/4312 , H04N21/44218 , H04N21/4516 , H04N21/4781 , H04N21/482 , H04N21/4882
Abstract: 본발명의일 실시예에따른디스플레이장치의화면표시제어방법은원격조정장치가전송한데이터를수신하는단계; 상기수신된데이터에기초하여상기원격조정장치를식별하는단계; 및상기식별된원격조정장치에대응하는 UI 화면을표시하는단계;를포함한다.
Abstract translation: 根据本发明示例性实施例的控制显示装置的显示的方法包括：接收由遥控装置发送的数据; 根据收到的数据识别遥控设备; 并且显示对应于所识别的遥控设备的UI屏幕。
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公开(公告)号：KR1020160069598A
公开(公告)日：2016-06-17
申请号：KR1020140175195
申请日：2014-12-08
Applicant: 삼성전자주식회사
IPC: H01L33/20
CPC classification number: H01L33/44 , H01L33/20 , H01L2224/48091 , H01L2224/48227 , H01L2224/48237 , H01L2224/48247 , H01L2224/48257 , H01L2224/49107 , H01L2224/73265 , H01L2224/8592 , H01L2924/181 , Y02E10/50 , H01L2924/00014 , H01L2924/00012
Abstract: 본발명의일 실시예에따른반도체발광소자는, 제1 도전형반도체층, 활성층및 제2 도전형반도체층을포함하는메사구조의발광구조물; 상기발광구조물의주변의상기제1 도전형반도체층상에구비되며, 규칙적으로배열된마이크로구조물들; 및적어도일부의상기마이크로구조물들상에배치되는상기제1 도전형반도체층의굴절률보다작은굴절률을갖는경사굴절층을포함할수 있다.
Abstract translation: 提供一种提高光提取效率的半导体发光器件及其制造方法。 根据本发明的实施例，半导体发光器件包括：具有包括第一导电半导体层，有源层和第二导电半导体层的台面结构的发光结构; 设置在发光结构周围的第一导电半导体层上的规则排列的微结构; 以及具有比第一导电半导体层的折射率小的折射率并且布置在至少一部分微结构上的倾斜折射层。
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公开(公告)号：KR101626333B1
公开(公告)日：2016-06-01
申请号：KR1020100009692
申请日：2010-02-02
Applicant: 삼성전자주식회사 , 인터내셔널 비즈니스 머신즈 코오퍼레이션 , 인피니언 테크놀로지스 아게 , 글로벌파운드리즈 싱가포르 피티이 엘티디 , 엔엑스피 유에스에이, 인코포레이티드
CPC classification number: H01L27/0629 , H01L23/5256 , H01L28/20 , H01L2924/0002 , H01L2924/00
Abstract: 반도체소자내의임베디드저항소자를형성하는방법및 반도체소자를제공한다. 상기방법은기판내에트렌치분리영역을형성하고, 상기기판및 트렌치분리영역상에패드산화막을형성하고, 상기패드산화막상에실리콘막을증착하고, 상기트렌치분리영역상부에위치하는상기실리콘막의영역상에포토레지스트마스크를형성하고, 상기트렌치분리영역상부에위치하는폴리컨덕터를얻기위하여상기실리콘막을식각하고, 상기폴리컨덕터를산화하고, 상기산화된표면상에산화막물질또는메탈게이트물질중 적어도하나를증착하고, 상기적어도하나의산화막물질또는메탈게이트물질상에실리콘막을증착하고, 상기트렌치분리영역과이격되어위치하는상기실리콘막의일정영역상에위치하는포토레지스트마스크로트랜지스터게이트를패터닝하고, 상기트렌치분리영역과이격되어위치하는적어도하나의트랜지스터구조물및 상기트렌치분리영역상부에위치하는적어도하나의저항소자구조물을얻기위해서상기실리콘막을식각하는것을포함한다.
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公开(公告)号：KR101594296B1
公开(公告)日：2016-02-16
申请号：KR1020090065479
申请日：2009-07-17
Applicant: 삼성전자주식회사
Inventor： 이승환
IPC: H04N5/232
CPC classification number: G03B5/00 , H02K41/0354 , H02K2201/18
Abstract: 본발명은손떨림보정장치에관한것이다. 상기손떨림보정장치는카메라의흔들림을보정하기위한손떨림보정장치로서, 서로독립적인제1 축및 제2 축으로이루어진 2차원평면상에서구동되는보정렌즈와, 보정렌즈의양편으로쌍을이루어배치되고, 제1 축방향의구동력을제공하기위한제1 마그네트들과, 보정렌즈의적어도어느한편에배치되고, 제2 축방향의구동력을제공하기위한제2 마그네트와, 제1, 제2 마그네트들과마주하는위치에배치되어전자기적인상호작용을수행하는구동코일을포함한다. 본발명에의하면, 보정렌즈의회전움직임을최소화시킴으로써제어특성이향상되는손떨림보정장치가제공된다.
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公开(公告)号：KR1020150020951A
公开(公告)日：2015-02-27
申请号：KR1020130098132
申请日：2013-08-19
Applicant: 삼성전자주식회사
CPC classification number: H04N5/23287 , G02B7/09 , H04N5/2257
Abstract: A camera module includes: a lens barrel including one or more lens group; a moving frame which is mounted with the lens barrel and moves in the optical shaft direction and first or second directions perpendicular to the optical shaft; a fixing frame which supports the moving frame and provides the driving force for the moving direction in the three directions; and a base which fixes the fixing frame and has an image sensor spaced apart from the lens group in the optical shaft direction.
Abstract translation: 相机模块包括：包括一个或多个透镜组的透镜镜筒; 移动框架，其安装有镜筒并沿光轴方向和垂直于光轴的第一或第二方向移动; 支撑移动框架并为三个方向的移动方向提供驱动力的固定框架; 以及固定框架并且具有沿着光轴方向与透镜组间隔开的图像传感器的基座。
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Patent Agency Ranking
公开(公告)号：KR1020140125521A
公开(公告)日：2014-10-29
申请号：KR1020130043386
申请日：2013-04-19
Applicant: 삼성전자주식회사
CPC classification number: H01L33/382 , H01L33/20 , H01L33/22 , H01L33/40 , H01L33/44 , H01L2224/13 , H01L2933/0016
Abstract: 본 발명의 실시 형태에 따른 반도체 발광소자는, 제1 도전형 반도체층, 활성층 및 제2 도전형 반도체층을 구비하는 발광구조물; 제1 도전형 반도체층과 접속된 제1 전극; 제2 도전형 반도체층과 접속된 콘택층, 콘택층 상의 캡핑층 및 캡핑층 상에서 캡핑층의 상면 및 측면을 덮는 금속 버퍼층을 포함하는 제2 전극; 발광구조물 상에서 제1 전극 및 제2 전극을 노출시키는 제1 절연층; 및 제1 절연층 상에서 제1 전극 및 금속 버퍼층의 적어도 일부를 노출시키는 제2 절연층을 포함한다.
Abstract translation: 根据本发明实施例的半导体发光器件包括：发光结构，包括第一导电半导体层，有源层和第二导电半导体层; 连接到第一导电半导体层的第一电极; 包括连接到第二导电半导体层的接触层的第二电极，形成在接触层上的覆盖层和覆盖覆盖层上的覆盖层的上侧和外侧的金属缓冲层; 在所述发光结构上露出所述第一电极和所述第二电极的第一绝缘层; 以及在所述第一绝缘层上暴露所述金属缓冲层和所述第一电极的至少一部分的第二绝缘层。
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公开(公告)号：KR1020140099066A
公开(公告)日：2014-08-11
申请号：KR1020130011832
申请日：2013-02-01
Applicant: 삼성전자주식회사
CPC classification number: H01S5/20 , H01L33/0079 , H01L33/22 , H01L33/382 , H01L33/44 , H01L33/486 , H01L2924/0002 , H01L2924/00
Abstract: According to an embodiment of the present invention, a semiconductor light emitting device includes a light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; a first electrode which is located under the light emitting structure and is connected to the first conductive semiconductor layer; a second electrode which is located inside the light emitting structure and is connected to the second conductive semiconductor layer; an insulation part which insulates the second electrode from the first conductive semiconductor layer, the active layer, and the first electrode; a first pad electrode connected to the first electrode; and a second pad electrode which is connected to the second electrode and is exposed on an upper surface of the light emitting structure.
Abstract translation: 根据本发明的实施例，半导体发光器件包括：发光结构，包括第一导电半导体层，有源层和第二导电半导体层; 第一电极，其位于发光结构下方并连接到第一导电半导体层; 第二电极，其位于发光结构内部并连接到第二导电半导体层; 绝缘部件，其将所述第二电极与所述第一导电半导体层，所述有源层和所述第一电极绝缘; 连接到第一电极的第一焊盘电极; 以及第二焊盘电极，其连接到所述第二电极并且暴露在所述发光结构的上表面上。
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公开(公告)号：KR1020140095794A
公开(公告)日：2014-08-04
申请号：KR1020130008633
申请日：2013-01-25
Applicant: 삼성전자주식회사
CPC classification number: H01L33/0079 , H01L33/0095 , H01L2933/0033
Abstract: According to the present invention, a method for manufacturing a light emitting device package includes the steps of preparing a growth substrate having a plurality of light emitting devices formed on an upper surface thereof; preparing a first package substrate having a bonding pattern which is formed on an upper side thereof and corresponds to some of the light emitting devices; bonding the light emitting devices and the bonding pattern after placing an upper surface of the growth substrate and an upper surface of the first package substrate to face each other; separating the light emitting devices from the growth substrate; and packaging the light emitting devices bonded to the bonding pattern.
Abstract translation: 根据本发明，一种制造发光器件封装的方法包括以下步骤：制备具有形成在其上表面上的多个发光器件的生长衬底; 制备具有形成在其上侧并对应于一些发光器件的接合图案的第一封装衬底; 在将生长衬底的上表面和第一封装衬底的上表面放置在一起之后，将发光器件和接合图案接合; 将发光器件与生长衬底分离; 并且包装结合到接合图案的发光器件。
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公开(公告)号：KR1020130139630A
公开(公告)日：2013-12-23
申请号：KR1020120063259
申请日：2012-06-13
Applicant: 삼성전자주식회사
IPC: H01L33/36
CPC classification number: H01L33/382 , H01L33/38 , H01L33/405 , H01L33/44 , H01L33/62 , H01L2924/0002 , H01L2924/00
Abstract: The present invention relates to a semiconductor light emitting device, a light emitting apparatus and a method for manufacturing the semiconductor light emitting device. According to one aspect of the present invention, the semiconductor light emitting device comprises a first conductive semiconductor layer; a light emitting structure having an active layer and a second conductive semiconductor layer; a first electrode structure having a conductive via that penetrates the second conductive semiconductor layer and the active layer to be connected to the first conductive semiconductor layer; a second electrode structure connected to the second conductive semiconductor layer; an insulating part which is formed to cover the first and second electrode structures and has an open region to expose a part of the first and second electrode structures; and first and second pad electrodes which are formed on the first and second electrode structures exposed by the open region and are respectively connected to the first and second electrode structures.
Abstract translation: 本发明涉及一种半导体发光器件，一种发光器件和一种用于制造半导体发光器件的方法。 根据本发明的一个方面，半导体发光器件包括第一导电半导体层; 具有有源层和第二导电半导体层的发光结构; 第一电极结构，其具有穿过第二导电半导体层的导电通孔和要连接到第一导电半导体层的有源层; 连接到所述第二导电半导体层的第二电极结构; 绝缘部，其形成为覆盖所述第一电极结构和所述第二电极结构，并具有露出所述第一和第二电极结构的一部分的开放区域; 以及形成在由开放区域暴露的第一和第二电极结构上并分别连接到第一和第二电极结构的第一和第二焊盘电极。
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公开(公告)号：KR1020120130967A
公开(公告)日：2012-12-04
申请号：KR1020110049090
申请日：2011-05-24
Applicant: 삼성전자주식회사
IPC: H01L21/28 , H01L27/108 , H01L21/8242
CPC classification number: H01L21/823475 , H01L21/823456
Abstract: PURPOSE: A semiconductor device having a metal plug and a forming method thereof are provided to prevent a leakage current of a capacitor by forming a buried contact plug and a bottom electrode after removing a temporary electrode. CONSTITUTION: A substrate comprises a first source drain region(31), a second source drain region, and a third source drain region. A first conductive plug comes in contact with the first source drain region. An interlayer insulating film(40) covers the first conductive plug and the substrate. A second conductive plug comes in contact with the second source drain region by vertically passing through the interlayer insulating film. A third conductive plug comes in contact with the third source drain region by vertically passing through the interlayer insulating film.
Abstract translation: 目的：提供一种具有金属塞及其形成方法的半导体器件，以在去除临时电极之后通过形成埋入式接触插塞和底部电极来防止电容器的漏电流。 构成：衬底包括第一源极漏极区域（31），第二源极漏极区域和第三源极漏极区域。 第一导电插头与第一源极漏极区域接触。 层间绝缘膜（40）覆盖第一导电插塞和基板。 第二导电插头通过垂直穿过层间绝缘膜与第二源漏区接触。 通过垂直穿过层间绝缘膜，第三导电插头与第三源漏区接触。
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