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    아크릴계 점착제 조성물
    21.
    发明公开
    아크릴계 점착제 조성물 有权
    丙烯酸胶粘剂组合物

    公开(公告)号：KR1020120023909A

    公开(公告)日：2012-03-14

    申请号：KR1020100086201

    申请日：2010-09-02

    Applicant: 제일모직주식회사

    Inventor： 하경진 ,  남이리나 ,  김이준 ,  이길성 ,  정은환

    IPC: C09J133/04 ,  C09J133/14 ,  C09J11/00 ,  G02B5/30

    CPC classification number: C09J133/14 ,  C09J9/00 ,  C09J11/06 ,  C09J133/066 ,  G02B5/30

    Abstract: PURPOSE: An acrylic adhesive composition is provided to improve light leakage phenomenon, to have excellent heat resistance, and to have high release strength, thereby preventing delamination, and restraining excitation. CONSTITUTION: An acrylic adhesive composition comprises an acrylic copolymer and a hardener, and additionally comprises a silane compound. The acrylic copolymer comprises (meth)acrylic acid alkyl ester, (meth)acrylic acid ester containing a hydroxyl group, and a compound containing imide group. The amount of the silane compound is 0.01-5 parts by weight on the basis of 100.0 parts by weight of the acrylic copolymer.

    Abstract translation: 目的：提供丙烯酸类粘合剂组合物以改善漏光现象，具有优异的耐热性，并且具有高剥离强度，从而防止分层和抑制激发。 构成：丙烯酸类粘合剂组合物包含丙烯酸共聚物和硬化剂，并且还包含硅烷化合物。 丙烯酸共聚物包含（甲基）丙烯酸烷基酯，含羟基的（甲基）丙烯酸酯和含有酰亚胺基的化合物。 基于100.0重量份丙烯酸共聚物，硅烷化合物的量为0.01-5重量份。

    반사방지 하드마스크 조성물 및 이를 이용한 재료의 패턴화방법
    22.
    发明授权
    반사방지 하드마스크 조성물 및 이를 이용한 재료의 패턴화방법 有权
    具有抗反射性的HARDMASK组合物和使用该材料的材料的方法

    公开(公告)号：KR100866015B1

    公开(公告)日：2008-10-30

    申请号：KR1020070051074

    申请日：2007-05-25

    Applicant: 제일모직주식회사

    Inventor： 전환승 ,  어동선 ,  김종섭 ,  오창일 ,  윤경호 ,  김민수 ,  이진국 ,  남이리나 ,  나탈리아토카레바

    IPC: C08G61/12 ,  G03F7/004

    CPC classification number: C08G61/121 ,  C08G61/12 ,  G03F7/004 ,  G03F7/0045

    Abstract: A hard mask composition having the anti-reflection property useful in the lithographic process of the shorter wavelength is provided to realize excellent optical property, and mechanical property and etching selectivity, to be coated by using the spin-on coating technique and to ensure the minimum remain acid content. A hard mask composition having the anti-reflection property comprises the polymer containing the aromatic ring indicated as the chemical formula 1. In the equation, N is the range of 1

    Abstract translation: 提供具有在较短波长的光刻工艺中有用的抗反射性能的硬掩模组合物，以通过使用旋涂技术来涂覆以获得优异的光学性能，机械性能和蚀刻选择性，并确保最小化 保持酸含量。 具有抗反射性的硬掩模组合物包含含有化学式1表示的芳环的聚合物。在该等式中，N是1≤n<190的范围。 R1选自氢，-OH，C1-10烷基，C6-10芳基，烯丙基和卤素原子。 R2选自氨基（-NH 2），烷氧基（-OR，其中R为C 1-10烷基或C 6-10芳基）和二烷基氨基（-NRR'，其中R和R'为 相应的C 1-10烷基或C 6-10芳基）。 R3选自化学式1或化学式2。

    반사방지 하드마스크 조성물
    23.
    发明授权
    반사방지 하드마스크 조성물 有权
    抗反射组合物

    公开(公告)号：KR100697979B1

    公开(公告)日：2007-03-23

    申请号：KR1020050089089

    申请日：2005-09-26

    Applicant: 제일모직주식회사

    Inventor： 어동선 ,  오창일 ,  이진국 ,  윤희찬 ,  남이리나 ,  김도현 ,  김종섭

    IPC: G03F7/004 ,  G03F7/039

    CPC classification number: G03F7/091 ,  G03F7/0757

    Abstract: An anti-reflective hard mask composition with minimum acid residual content is provided to have anti-reflection property satisfactory for lithographic process, and exhibit excellent optical and mechanical properties, and etching selectivity by comprising aromatic ring containing polymer with specific chemical formula with strong absorption at short wavelength area. The hard mask composition includes (a) an aromatic ring containing polymer which comprises at least one selected from groups represented by a formula(1), wherein n ranges from 1 to less than 190; R1 and R2 are independently hydrogen, hydroxy group, C1-C10 alkyl group, C6-C10 aryl group, allyl group or halogen atom; R3 and R4 are independently hydrogen or reactive site or chromophore site reacting with cross-linking ingredient; R5 is hydrogen, C1-C10 alkyl group, C6-C10 aryl group or allyl group; R6 and R7 are independently hydrogen or alkoxy substituted silane structure represented by a formula(2), wherein n ranges from 1to less than 100, R8 is methyl, ethyl, C3-C10 alkyl or C6-C10 aryl group, and (b) cross-linking ingredient, (c) acid catalyst, and (d) organic solvent.

    Abstract translation: 提供具有最小酸残留量的抗反射硬掩模组​​合物以具有对于平版印刷工艺满意的抗反射性能，并且通过包含具有特定化学式的具有强吸收性的芳香环聚合物表现出优异的光学和机械性能以及蚀刻选择性 短波长区域。 硬掩模组合物包括（a）含芳环的聚合物，其包含选自式（1）表示的基团中的至少一种，其中n的范围为1至小于190; R1和R2独立地是氢，羟基，C1-C10烷基，C6-C10芳基，烯丙基或卤素原子; R3和R4独立地是氢或与交联成分反应的反应位点或发色团位点; R5是氢，C1-C10烷基，C6-C10芳基或烯丙基; R6和R7独立地是氢或由式（2）表示的烷氧基取代的硅烷结构，其中n在1至小于100的范围内，R 8是甲基，乙基，C 3 -C 10烷基或C 6 -C 10芳基，和（b） 连接成分，（c）酸催化剂和（d）有机溶剂。

    신규 플루오렌 중합체 및 이를 이용한 반사방지성을 갖는하드마스크 조성물
    24.
    发明授权
    신규 플루오렌 중합체 및 이를 이용한 반사방지성을 갖는하드마스크 조성물 有权
    具有使用其制备的抗反射性的新型荧光聚合物和HARDMASK组合物

    公开(公告)号：KR100671120B1

    公开(公告)日：2007-01-17

    申请号：KR1020050068893

    申请日：2005-07-28

    Applicant: 제일모직주식회사

    Inventor： 어동선 ,  오창일 ,  김도현 ,  이진국 ,  남이리나

    IPC: C08G61/02 ,  C08G61/00

    Abstract: Provided are a novel fluorene polymer and an antireflective hardmask composition using the same, which is superior in optical properties, mechanical properties, and etch selectivity characteristics and is useful for short-wave lithography process. The fluorene polymer has a structure represented by the following formula 1. In the formula, n is in the range of 1

    Abstract translation: 提供了一种新颖的芴聚合物和使用其的抗反射硬掩模组​​合物，其在光学性能，机械性能和蚀刻选择性方面优异，并且可用于短波光刻工艺。 芴聚合物具有由下式1表示的结构。在该式中，n在1 <= n <190的范围内，R 1和R 2各自为氢，羟基，C 1-10烷基， C6-10芳基，烯丙基或卤素原子，R3和R4各自为与交联成分反应的反应性部分，或选自苯基，芘，芘，荧蒽中的发色团部分 ，二苯甲酮，噻吨酮，蒽和蒽衍生物。

    옵셋 인쇄용 전극 조성물
    28.
    发明授权
    옵셋 인쇄용 전극 조성물 失效
    胶版印刷用电极组合物

    公开(公告)号：KR101309812B1

    公开(公告)日：2013-09-23

    申请号：KR1020100121599

    申请日：2010-12-01

    Applicant: 제일모직주식회사

    Inventor： 이길성 ,  김태중 ,  남이리나 ,  정명성 ,  하경진

    IPC: H01B1/20 ,  H01J17/49

    Abstract: 본 발명은 특정한 조합의 단량체를 포함하는 중합체를 유기 바인더로 포함시킴으로써, 우수한 전사성과 300회 이상의 연속 인쇄가 가능하고, 미세 전극 패턴 형성시 패턴 형성 속도를 향상시킬 수 있는 옵셋 인쇄용 전극 조성물에 관한 것이다.

    하드마스크 층 형성용 조성물 및 이를 사용한 패턴화된 재료 형상의 제조방법
    30.
    发明公开
    하드마스크 층 형성용 조성물 및 이를 사용한 패턴화된 재료 형상의 제조방법 有权
    用于发泡硬质合金层的组合物和使用其制造图案材料的方法

    公开(公告)号：KR1020100072660A

    公开(公告)日：2010-07-01

    申请号：KR1020080131135

    申请日：2008-12-22

    Applicant: 제일모직주식회사

    Inventor： 나탈리아토카레바 ,  남이리나 ,  오창일 ,  김민수 ,  이진국 ,  윤경호 ,  형경희 ,  어동선 ,  김종섭

    IPC: C08G61/02 ,  C08G61/00 ,  C08L65/00 ,  G03F7/004

    CPC classification number: C08G61/02 ,  C08G61/00 ,  C08L65/00 ,  G03F7/004 ,  G03F7/0045 ,  G03F7/0047

    Abstract: PURPOSE: A composition for forming a hard-mask layer and a manufacturing method of a patterned material using thereof are provided to improve the anti-reflection property applied to a short wavelength area and to apply a coating spin-on method. CONSTITUTION: A composition for forming a hard-mask layer contains a copolymer marked with chemical formula 1. In chemical formula 1, R1 is a substituted or non-substituted alkylene of C1~C4. R2, R3, R7, and R8 are hydrogen, a hydroxyl group, a straight, branched, or cyclic alkyl group of C1~C10, an alkoxy group, or an aryl group of C6~C20. R4, R5, and R6 are the hydrogen, the hydroxyl group, an alkyl ether group of C1~C4, a phenyl dialkylene ether group, or their combination.

    Abstract translation: 目的：提供一种用于形成硬掩模层的组合物及其使用的图案化材料的制造方法，以提高施加于短波长区域的抗反射性，并施加涂布旋涂法。 构成：用于形成硬掩模层的组合物包含标记有化学式1的共聚物。在化学式1中，R 1是C 1 -C 4的取代或未取代的亚烷基。 R 2，R 3，R 7和R 8是C 1〜C 10，烷氧基或C 6〜C 20的芳基的氢，羟基，直链，支链或环状烷基。 R4，R5和R6是氢，羟基，C1〜C4的烷基醚基，苯基二亚烷基醚基或它们的组合。

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