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公开(公告)号：KR1020090087353A
公开(公告)日：2009-08-17
申请号：KR1020080012745
申请日：2008-02-12
Applicant: 포항공과대학교 산학협력단
CPC classification number: B82B3/0038 , B82Y40/00 , C08J5/005
Abstract: A manufacturing method of a nano structure using self-assembled block copolymer is provided to easily form a nano structure on a metal surface. A manufacturing method of a nano structure using self-assembled block copolymer comprises the following steps: a step for forming a metal thin film on a substrate(a); a step for treating a surface of the metal thin film using oxygen plasma(b); a step for neutralizing the surface of the metal thin film(c); a step for coating a block copolymer on the surface(d); and a step for forming a self-assembled nano structure by annealing and exposing the block copolymer(e).
Abstract translation: 提供使用自组装嵌段共聚物的纳米结构的制造方法，以容易地在金属表面上形成纳米结构。 使用自组装嵌段共聚物的纳米结构体的制造方法包括以下步骤：在基板（a）上形成金属薄膜的工序。 使用氧等离子体（b）处理金属薄膜的表面的步骤; 中和金属薄膜（c）的表面的步骤; 在表面（d）上涂布嵌段共聚物的步骤; 以及通过退火和暴露嵌段共聚物（e）形成自组装纳米结构的步骤。
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公开(公告)号：KR1020090049425A
公开(公告)日：2009-05-18
申请号：KR1020070115678
申请日：2007-11-13
Applicant: 포항공과대학교 산학협력단
IPC: H01L21/20
Abstract: 본 발명은 고유전율 박막에 주입되는 질소의 위치와 양을 조절함으로써 고유전율 박막의 재현성과 열화에 대한 저항성을 높인 것으로, 특히 계면을 제외한 부분에 대한 질소처리와 질소처리시의 함량의 조절을 통해 박막의 신뢰성을 최적화시킨 것을 특징으로 한다.
본 발명은 MOSFET, 메모리 소자, TFT, 캐패시터 등에 모두 적용될 수 있으며 박막의 신뢰성과 계면특성을 향상시킬 수 있다.
고유전율 박막, 신뢰성-
公开(公告)号：KR100834453B1
公开(公告)日：2008-06-05
申请号：KR1020070010401
申请日：2007-02-01
Applicant: 포항공과대학교 산학협력단
IPC: H01L21/316
CPC classification number: H01L21/02205 , H01L21/02172 , H01L21/02181 , H01L21/28556
Abstract: A high dielectric thin film and a method of forming the same are provided to increase the reliability of a thin film by adjusting the position of dopants. A method of forming a high dielectric thin film on a substrate through a deposition process includes: implanting a metal precursor and material oxidizing metal to form a thin film; implanting the material oxidizing metal to form a thin film including the metal precursor and the dopant. A position or thickness profile of the thin film including dopants are adjusted to change characteristics of a device. Metal included in the metal precursor is at least one selected from the group consisting of hafnium(Hf), zirconium(Zr), aluminum(Al), tantalum(Ta), titanium(Ti), strontium(Sr), lanthanium(La), barium(Ba), lead(Pb), chronium(Cr), molybdenum(Mo), tungsten(W), yttrium(Y), and manganese(Mn).
Abstract translation: 提供高电介质薄膜及其形成方法以通过调节掺杂剂的位置来提高薄膜的可靠性。 通过沉积工艺在衬底上形成高电介质薄膜的方法包括：注入金属前体和材料氧化金属以形成薄膜; 注入材料氧化金属以形成包括金属前体和掺杂剂的薄膜。 调整包括掺杂剂的薄膜的位置或厚度分布以改变装置的特性。 包括在金属前体中的金属是选自铪（Hf），锆（Zr），铝（Al），钽（Ta），钛（Ti），锶（Sr），镧（La） ，钡（Ba），铅（Pb），时间（Cr），钼（Mo），钨（W），钇（Y）和锰（Mn）。
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公开(公告)号：KR1020100107228A
公开(公告)日：2010-10-05
申请号：KR1020090025405
申请日：2009-03-25
Applicant: 포항공과대학교 산학협력단
IPC: H01L21/3205 , H01L21/24
CPC classification number: H01L21/28518 , H01L21/28562 , H01L21/324 , H01L29/66575
Abstract: PURPOSE: A method for forming the contacts of semiconductor devices using a selective deposition method is provided to selectively deposit metal thin films by utilizing an atomic layer deposition method and a self-assembled monomolecular film. CONSTITUTION: The surface of a spacer is modified by applying a self-assembled monomolecular film on a semiconductor device. The self-assembled monomolecular film is based on octadecyltrichlorosilane. A metal thin film is formed around the modified surface of the spacer through an atomic layer deposition method. The metal thin film is thermally treated in order to form silicide. The self-assembled monomolecular film is then eliminated.
Abstract translation: 目的：提供使用选择性沉积方法形成半导体器件的触点的方法，通过利用原子层沉积法和自组装单分子膜来选择性地沉积金属薄膜。 构成：通过在半导体器件上施加自组装单分子膜来改变间隔物的表面。 自组装单分子膜基于十八烷基三氯硅烷。 通过原子层沉积法在间隔物的改性表面周围形成金属薄膜。 对金属薄膜进行热处理以形成硅化物。 然后消除自组装单分子膜。
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公开(公告)号：KR1020100062074A
公开(公告)日：2010-06-10
申请号：KR1020080120500
申请日：2008-12-01
Applicant: 포항공과대학교 산학협력단
IPC: H01L21/027 , G03F7/00 , B82Y40/00
CPC classification number: G03F7/0002 , B82Y40/00 , G02F1/1336
Abstract: PURPOSE: A method of manufacturing a structure for light source and a method of manufacturing a light source using the same are provided to reduce the thickness and power consumption by applying nanostructure of uniform and aligned light emitting material to a light emitting device. CONSTITUTION: A metal layer is formed on the top of a substrate on which an oxide layer is formed(1). A nanotemplate formed with the nano pattern is formed on the metal layer. The nano pattern is transferred to the metal layer by etching the metal layer. The nanotemplate is removed. A nano structure is formed by growing the light emitting material in a space of the oxide layer. The metal layer and the nanostructure are separated from the substrate by eliminating the oxide layer.
Abstract translation: 目的：提供一种制造光源结构的方法和使用该结构的光源的制造方法，以通过将均匀且对准的发光材料的纳米结构施加到发光器件来减小厚度和功耗。 构成：在其上形成有氧化物层的基板的顶部上形成金属层（1）。 在金属层上形成由纳米图案形成的纳米模板。 通过蚀刻金属层将纳米图案转印到金属层。 去除纳米模板。 通过在氧化物层的空间内生长发光材料来形成纳米结构。 通过去除氧化物层，将金属层和纳米结构与衬底分离。
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Patent Agency Ranking26.发明公开실리콘 게르마늄의 선택적 에피 성장과 양극 산화 알루미늄나노 템플레이트를 이용한 실리콘 게르마늄 나노점의 제조방법 및 반도체 소자 无效通过在阳极氧化铝纳米微粒和半导体元素上的选择性外源生长标记纳米结构的制造方法
公开(公告)号：KR1020100023496A
公开(公告)日：2010-03-04
申请号：KR1020080082299
申请日：2008-08-22
Applicant: 포항공과대학교 산학협력단
CPC classification number: H01L21/02639 , H01L21/02532 , H01L21/02603 , H01L21/0262
Abstract: PURPOSE: A manufacturing method of a silicon-germanium nanodot and a semiconductor device thereof are provided to manufacture a large area silicon-germanium nanodot by forming a nanowire using a nano template. CONSTITUTION: A nano template forming a nano hole on a silicon substrate is manufactured. A resistant layer is removed by etching the nano template hole floor. A silicon-germanium is selectively epitaxial-grown from the floor of the nano template hole. The nano template is removed. The epitaxial-growth of the silicon-germanium is operated by the chemical vapor deposition method.
Abstract translation: 目的：提供硅 - 锗纳米点及其半导体器件的制造方法，通过使用纳米模板形成纳米线来制造大面积的硅 - 锗纳米点。 构成：制造在硅衬底上形成纳米孔的纳米模板。 通过蚀刻纳米模板孔底层去除耐层。 从纳米模板孔的底部选择性地外延生长硅 - 锗。 纳米模板被去除。 硅 - 锗的外延生长通过化学气相沉积法进行。
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公开(公告)号：KR1020100013554A
公开(公告)日：2010-02-10
申请号：KR1020080075129
申请日：2008-07-31
Applicant: 포항공과대학교 산학협력단
IPC: H01L21/30
Abstract: PURPOSE: A method for controlling electron carrier concentration in an oxide semiconductor or a conductor by ultraviolet ray treatment are provided to form a plurality of point defects controlling the carrier concentration inside a thin film by projecting an ultraviolet on a thin film or a device having thin film therein. CONSTITUTION: An objects requiring for control an electrical property is installed to a vacuum container(S101). Gases inside the vacuum container are discharged to maintain the vacuum container a predetermined degree of vacuum. The ultraviolet ray is projected on the surface of the object in a predetermined degree of vacuum(S103). The electrical characteristic is estimated to check whether the object has a desired property(S104). If the object does not have a desired resistance and carrier concentration, the steps(S101~S103) is performed again.
Abstract translation: 目的：提供一种通过紫外线处理来控制氧化物半导体或导体中的电子载流子浓度的方法，以通过在薄膜上投射紫外线或具有薄的装置形成控制薄膜内的载流子浓度的多个点缺陷 电影里面。 构成：将要控制电气特性的物体安装在真空容器中（S101）。 排出真空容器内部的气体，使真空容器保持规定的真空度。 紫外线以预定的真空度投影在物体的表面上（S103）。 估计电特性以检查对象是否具有期望的属性（S104）。 如果物体不具有期望的电阻和载流子浓度，则再次执行步骤（S101〜S103）。
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公开(公告)号：KR100920456B1
公开(公告)日：2009-10-08
申请号：KR1020070100430
申请日：2007-10-05
Applicant: 포항공과대학교 산학협력단
Abstract: 본 발명은 나노 막대의 제조방법에 관한 것으로, 특히 촉매를 사용하지 않으며 단순한 공정을 통해 금속 나노 막대를 제조할 수 있는 방법을 제공하는 것을 목적으로 한다.
상기 목적을 달성하기 위해 본 발명은 플라스마 원자층 증착법에 사용되는 반응가스의 조절을 통해 자기 조립 나노 막대를 형성하는 방법을 제공한다.
본 발명의 실시예에서는 코발트 전구체로 CoCp
2 를 사용하고, 퍼징가스로 아르곤 가스, 그리고 반응가스로 암모니아와 모노실란의 혼합가스의 플라스마를 사용하여 직경 약 10 nm 내외, 길이 50 ~ 60 nm의 나노 막대를 형성하였다.
자기 조립 나노 막대, 플라스마 원자층 증착 방법, 반응 가스의 조절, 금속 나노 막대-
公开(公告)号：KR1020090014469A
公开(公告)日：2009-02-11
申请号：KR1020070078440
申请日：2007-08-06
Applicant: 포항공과대학교 산학협력단
CPC classification number: B82B3/0038 , B22F2301/25 , B22F2304/054 , H01L21/02601 , H01L29/0665
Abstract: A manufacturing method of nanostructures using anodized aluminum and atomic layer deposition process is provided to form nanostructures using various materials and to obtain easily the nanostructures of the various shapes and structures. A manufacturing method of nanostructures comprises steps of: (a) injecting a substrate in an acid solution, anodizing aluminium on the substrate and forming an aluminium oxide nano template having a hole of a nano-size in the substrate; (b) filling up the hole formed in the nano template using an atomic layer deposition method; (c) removing a resistant layer formed in the nano template through an etching process; and (d) removing aluminium oxide.
Abstract translation: 提供使用阳极氧化铝和原子层沉积工艺的纳米结构的制造方法，以使用各种材料形成纳米结构，并容易地获得各种形状和结构的纳米结构。 纳米结构的制造方法包括以下步骤：（a）在酸性溶液中注入基材，在基材上阳极氧化铝，并在基材中形成具有纳米尺寸的孔的氧化铝纳米模板; （b）使用原子层沉积法填充纳米模板中形成的孔; （c）通过蚀刻工艺去除在纳米模板中形成的电阻层; 和（d）除去氧化铝。
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