公开(公告)号：SG181642A1

公开(公告)日：2012-07-30

申请号：SG2012042941

申请日：2010-12-10

Applicant: ADVANCED TECH MATERIALS ,  IBM

Inventor： AFZALI-ARDAKANI ALI ,  BAUM THOMAS H ,  BOGGS KARL E ,  COOPER EMANUEL I ,  CYWAR DOUGLAS ,  KERN MATTHEW ,  KHOJASTEH MAHMOUD ,  NUNES RONALD W ,  TOTIR GEORGE GABRIEL

Abstract: Methods for removing a masking material, for example, a photoresist, and electronic devices formed by removing a masking material are presented. For example, a method for removing a masking material includes contacting the masking material with a solution comprising cerium and at least one additional oxidant. The cerium may be comprised in a salt. The salt may be cerium ammonium nitrate. The at least one additional oxidant may be a manganese, ruthenium, and/or osmium-containing compound.

公开(公告)号：SG177201A1

公开(公告)日：2012-01-30

申请号：SG2011091790

申请日：2007-12-21

Applicant: ADVANCED TECH MATERIALS

Inventor： COOPER EMANUEL I ,  SPARKS EILEEN ,  BOWERS WILLIAM R ,  BISCOTTO MARK A ,  YANDERS KEVIN P ,  KORZENSKI MICHAEL B ,  SONTHALIA PRERNA ,  THOMAS NICOLE E

Abstract: Abstract COMPOSITIONS AND METHODS FOR THE SELECTIVE REMOVAL OFSILICON NITRIDECompositions useful for the selective removal of silicon nitride materials relative to poly-silicon, silicon oxide materials and/or silicide materials from a microelectronic device having same thereon. The removal compositions include fluorosilicic acid, silicic acid, and at least one organic solvent. Typical process temperatures are less than about 100°C and typical selectivity for nitride versus oxide etch is about 200:1 to about 2000:1. Under typical process conditions, nickel-based silicides as well as titanium and tantalum nitrides are largely unaffected, and polysilicon etch rates are less than about 1 A min -1Figure 1

公开(公告)号：EP2964725A4

公开(公告)日：2016-11-23

申请号：EP14759688

申请日：2014-03-04

Applicant: ADVANCED TECH MATERIALS ,  ATMI TAIWAN CO LTD

Inventor： CHEN LI-MIN ,  COOPER EMANUEL I ,  LIPPY STEVEN ,  SONG LINGYAN ,  HSU CHIA-JUNG ,  TU SHENG-HUNG ,  WANG CHIEH JU

IPC: C09K13/08 ,  C09K13/10 ,  G03F7/42

CPC classification number: C09K13/00 ,  C09K13/08 ,  C09K13/10 ,  C23F1/14 ,  C23F1/26 ,  C23G1/02 ,  G03F7/423 ,  H01L21/32134