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    Method, apparatus and substrates for lithographic metrology
    21.
    发明授权
    Method, apparatus and substrates for lithographic metrology 有权

    公开(公告)号：US10042268B2

    公开(公告)日：2018-08-07

    申请号：US15038535

    申请日：2014-11-04

    Applicant: ASML Netherlands B.V.

    Inventor： Hendrik Jan Hidde Smilde ,  Arie Jeffrey Den Boef ,  Omer Abubaker Omer Adam ,  Martin Jacobus Johan Jak

    IPC: G01B11/00 ,  G03F7/20

    Abstract: A substrate has three or more overlay gratings formed thereon by a lithographic process. Each overlay grating has a known overlay bias. The values of overlay bias include for example two values in a region centered on zero and two values in a region centered on P/2, where P is the pitch of the gratings. Overlay is calculated from asymmetry measurements for the gratings using knowledge of the different overlay bias values and an assumed non-linear relationship between overlay and target asymmetry, thereby to correct for feature asymmetry. The periodic relationship in the region of zero bias and P/2 has gradients of opposite sign. The calculation allows said gradients to have different magnitudes as well as opposite sign. The calculation also provides information on feature asymmetry and other processing effects. This information is used to improve subsequent performance of the measurement process, and/or the lithographic process.

    Method of designing metrology targets, substrates having metrology targets, method of measuring overlay, and device manufacturing method
    22.
    发明授权
    Method of designing metrology targets, substrates having metrology targets, method of measuring overlay, and device manufacturing method 有权

    公开(公告)号：US10025199B2

    公开(公告)日：2018-07-17

    申请号：US14656510

    申请日：2015-03-12

    Applicant: ASML Netherlands B.V.

    Inventor： Arie Jeffrey Den Boef ,  Kaustuve Bhattacharyya

    IPC: G03F7/20 ,  G03F9/00 ,  H01L23/544

    Abstract: Metrology targets are formed by a lithographic process, each target comprising a bottom grating and a top grating. Overlay performance of the lithographic process can be measured by illuminating each target with radiation and observing asymmetry in diffracted radiation. Parameters of metrology recipe and target design are selected so as to maximize accuracy of measurement of overlay, rather than reproducibility. The method includes calculating at least one of a relative amplitude and a relative phase between (i) a first radiation component representing radiation diffracted by the top grating and (ii) a second radiation component representing radiation diffracted by the bottom grating after traveling through the top grating and intervening layers. The top grating design may be modified to bring the relative amplitude close to unity. The wavelength of illuminating radiation in the metrology recipe can be adjusted to bring the relative phase close to π/2 or 3π/2.

    Diffraction based overlay metrology tool and method of diffraction based overlay metrology
    23.
    发明授权
    Diffraction based overlay metrology tool and method of diffraction based overlay metrology 有权

    公开(公告)号：US09909996B2

    公开(公告)日：2018-03-06

    申请号：US14202825

    申请日：2014-03-10

    Applicant: ASML Netherlands B.V.

    Inventor： Arie Jeffrey Den Boef

    IPC: G01N21/956 ,  G03F7/20

    CPC classification number: G01N21/95607 ,  G03F7/7015 ,  G03F7/70633

    Abstract: Systems, methods, and apparatus are provided for determining overlay of a pattern on a substrate with a mask pattern defined in a resist layer on top of the pattern on the substrate. A first grating is provided under a second grating, each having substantially identical pitch to the other, together forming a composite grating. A first illumination beam is provided under an angle of incidence along a first horizontal direction. The intensity of a diffracted beam from the composite grating is measured. A second illumination beam is provided under the angle of incidence along a second horizontal direction. The second horizontal direction is opposite to the first horizontal direction. The intensity of the diffracted beam from the composite grating is measured. The difference between the diffracted beam from the first illumination beam and the diffracted beam from the second illumination beam, linearly scaled, results in the overlay error.

    Metrology method and apparatus, computer program and lithographic system
    24.
    发明授权
    Metrology method and apparatus, computer program and lithographic system 有权

    公开(公告)号：US09869940B2

    公开(公告)日：2018-01-16

    申请号：US15133866

    申请日：2016-04-20

    Applicant: ASML Netherlands B.V.

    Inventor： Si-Han Zeng ,  Yue-Lin Peng ,  Jen-Yu Fang ,  Arie Jeffrey Den Boef ,  Alexander Straaijer ,  Ching-Yi Hung ,  Patrick Warnaar

    IPC: G01B11/14 ,  G03F7/20 ,  G01B11/24 ,  G01B11/27

    CPC classification number: G03F7/70633 ,  G01B11/24 ,  G01B11/272

    Abstract: Disclosed are a method, computer program and associated apparatuses for measuring a parameter of a lithographic process. The method comprising the steps of: obtaining first measurements comprising measurements of structural asymmetry relating to a plurality of first structures, each of said plurality of measurements of structural asymmetry corresponding to a different measurement combination of measurement radiation and a value for at least a first parameter; obtaining a plurality of second measurements of target asymmetry relating to a plurality of targets, each of said plurality of measurements of target asymmetry corresponding to one of said different measurement combinations, determining a relationship function describing the relationship between said first measurements and said second measurements, for each of said measurement combinations; determining, from said relationship function, a corrected overlay value, said corrected overlay value being corrected for structural contribution due to structural asymmetry in at least said first structure.

    Mark position measuring apparatus and method, lithographic apparatus and device manufacturing method
    25.
    发明授权
    Mark position measuring apparatus and method, lithographic apparatus and device manufacturing method 有权
    标记位置测量装置和方法，光刻设备和装置制造方法

    公开(公告)号：US09551939B2

    公开(公告)日：2017-01-24

    申请号：US14428565

    申请日：2013-09-23

    Applicant: ASML Netherlands B.V. ,  ASML Holding N.V.

    Inventor： Simon Gijsbert Josephus Mathijssen ,  Arie Jeffrey Den Boef ,  Stanley Drazkiewicz ,  Justin Lloyd Kreuzer ,  Gerrit Johannes Nijmeijer

    IPC: G03B27/72 ,  G03F7/20 ,  G01B11/14

    CPC classification number: G03F7/70141 ,  G01B11/14 ,  G03F9/7069 ,  G03F9/7088

    Abstract: An apparatus to measure the position of a mark, the apparatus including an illumination arrangement to direct radiation across a pupil of the apparatus, the illumination arrangement including an illumination source to provide multiple-wavelength radiation of substantially equal polarization and a wave plate to alter the polarization of the radiation in dependency of the wavelength, such that radiation of different polarization is supplied; an objective to direct radiation on the mark using the radiation supplied by the illumination arrangement while scanning the radiation across the mark in a scanning direction; a radiation processing element to process radiation that is diffracted by the mark and received by the objective; and a detection arrangement to detect variation in an intensity of radiation output by the radiation processing element during the scanning and to calculate from the detected variation a position of the mark in at least a first direction of measurement.

    Abstract translation: 一种用于测量标记位置的装置，该装置包括用于将辐射引导到装置的光瞳上的照明装置，所述照明装置包括照明源，以提供基本上相等偏振的多波长辐射和波片，以改变 依赖于波长的辐射的极化，使得提供不同极化的辐射; 使用由照射装置提供的辐射在扫描方向上扫描横过标记的辐射来将辐射引导到标记上的目的; 辐射处理元件，用于处理由所述标记衍射并由所述物镜接收的辐射; 以及检测装置，用于检测在扫描期间由辐射处理元件输出的辐射强度的变化，并且根据检测到的变化来计算至少第一测量方向上的标记的位置。

    Metrology Method and Apparatus, Lithographic Apparatus, and Device Manufacturing Method
    27.
    发明申请
    Metrology Method and Apparatus, Lithographic Apparatus, and Device Manufacturing Method 审中-公开
    计量方法和装置，平版印刷装置和装置制造方法

    公开(公告)号：US20150308895A1

    公开(公告)日：2015-10-29

    申请号：US14796341

    申请日：2015-07-10

    Applicant: ASML Netherlands B.V.

    Inventor： Arie Jeffrey Den Boef

    IPC: G01J3/18 ,  G03F7/20 ,  G01J3/28

    CPC classification number: G01J3/18 ,  G01J3/28 ,  G03F7/70483 ,  G03F7/70625 ,  G03F7/70633

    Abstract: A metrology apparatus includes first (21) and second (22) radiation sources which generate first (iB1) and second (iB2) illumination beams of different spatial extent and/or angular range. One of the illumination beams is selected, e.g. according to the size of target to be measured. The beam selection can be made by a tillable mirror (254) at a back-projected substrate plane in a Kohler illumination setup.

    Abstract translation: 测量装置包括产生不同空间范围和/或角度范围的第一（iB1）和第二（iB2）照明光束的第一（21）和第二（22）辐射源。 选择一个照明光束，例如。 根据要测量的目标的大小。 光束选择可以由Kohler照明设置中的背投影基板平面上的可压扁反射镜（254）制成。

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