中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

70 records (took 0.032 seconds)

    21.
    发明专利
    未知

    公开(公告)号：DE69326543D1

    公开(公告)日：1999-10-28

    申请号：DE69326543

    申请日：1993-04-28

    Applicant: CONS RIC MICROELETTRONICA

    Inventor： PALARA SERGIO

    IPC: H01L29/73 ,  H01L21/331 ,  H01L21/822 ,  H01L27/02 ,  H01L27/04 ,  H01L27/06 ,  H01L29/732 ,  H01L29/78 ,  H01L27/08

    Abstract: A structure of an electronic device having a predetermined unidirectional conduction threshold, being formed on a chip of an N-semiconductor material, comprises a plurality of isolated N-regions (16a-c), each bounded laterally by an isolating region (15a-c) and at the bottom by two buried P- and N-regions which form in combination a junction with a predetermined reverse conduction threshold, and means (15a,18,17b,15b,17c) of connecting the junctions of the various isolated regions serially together in the same conduction sense; the buried N-region of the first junction (Z1) in the series is connected to a common electrode (C), which also is one terminal of the device, over an internal path (R) of the N-material of the chip, and the buried P-region of the last junction (Zn) in the series contains an additional buried N-region (14d) which is connected electrically to a second terminal (18a) of the device.

    23.
    发明专利
    未知

    公开(公告)号：DE69224827D1

    公开(公告)日：1998-04-23

    申请号：DE69224827

    申请日：1992-05-28

    Applicant: CONS RIC MICROELETTRONICA

    Inventor： PALARA SERGIO

    IPC: H01L29/06 ,  H01L29/40 ,  H01L29/8605 ,  H01L29/86

    Abstract: A spiral resistor (1), being of a type formed on a semiconductor substrate (2) to withstand high voltages, comprises at least one thin field-plate layer (6) covering said substrate (2) between adjacent turns (5) of the resistor. This prevents the well-known phenomenon of the "phantom gate" from occurring which would result in the characteristics of spiral resistors deteriorating over time.

    27.
    发明专利
    未知

    公开(公告)号：DE68921004D1

    公开(公告)日：1995-03-16

    申请号：DE68921004

    申请日：1989-11-17

    Applicant: SGS THOMSON MICROELECTRONICS ,  CONS RIC MICROELETTRONICA

    Inventor： ZISA MICHELE ,  SCILLA GIUSEPPE ,  PALARA SERGIO

    IPC: H01L29/78 ,  H01L27/02 ,  H01L27/04 ,  H03K17/08 ,  H03K17/082 ,  H03K17/14

    Abstract: The device for protection against the short circuit of an MOS-type power device comprises at least one secondary branch circuit (2, 3) arranged in parallel with a main branch circuit (1) which includes the power transistor (T1). The secondary branch (2, 3) includes a control MOS transistor (T2, T3) having the same characteristics as the power transistor (T1) under control and the ability to conduct a current equal to a fraction of that flowing through the power transistor (T1). The gate of the control transistor (T2, T3) is connected directly with that of the power transistor (T1). The secondary branch also includes means (T4, T5, T6, R2, R3) sensitive to temperature which, in the case of a current flow corresponding to the short circuit current of the power transistor (T1), act on the gate common to the control and to the power transistors (T2, T3; T1) so as to lower its voltage and thus limit the conduction of same.

    28.
    发明专利
    未知

    公开(公告)号：IT1248607B

    公开(公告)日：1995-01-19

    申请号：ITMI911390

    申请日：1991-05-21

    Applicant: CONS RIC MICROELETTRONICA

    Inventor： SUERI STEFANO ,  PALARA SERGIO

    IPC: H03K17/042 ,  H03K17/14 ,  H03K17/64 ,  H01L

    Abstract: The driving circuit comprises a detection resistance (R1) interposed between the emitter of the power transistor (T1) and ground, a first circuit part (G1, T4, T5, R2) suitable for generating a first current (I2) being a function of the voltage across said detection resistance (R1) and a second circuit part (TD2, T3, TD1, T2) suitable for generating a driving base current (Ib) of the power transistor (T1) that is proportional to said first current (I2).

    29.
    发明专利
    未知

    公开(公告)号：ITMI911390D0

    公开(公告)日：1991-05-21

    申请号：ITMI911390

    申请日：1991-05-21

    Applicant: CONS RIC MICROELETTRONICA

    Inventor： SUERI STEFANO ,  PALARA SERGIO

    IPC: H03K17/042 ,  H03K17/14 ,  H03K17/64 ,  G05F

    Abstract: The driving circuit comprises a detection resistance (R1) interposed between the emitter of the power transistor (T1) and ground, a first circuit part (G1, T4, T5, R2) suitable for generating a first current (I2) being a function of the voltage across said detection resistance (R1) and a second circuit part (TD2, T3, TD1, T2) suitable for generating a driving base current (Ib) of the power transistor (T1) that is proportional to said first current (I2).

Patent Agency Ranking