公开(公告)号：EP2703520A1

公开(公告)日：2014-03-05

申请号：EP13182113.4

申请日：2013-08-29

Applicant: FEI COMPANY

Inventor： Randolph, Steven ,  Straw, Marcus

IPC: C23C16/02 ,  C23C16/04 ,  C23C16/18

CPC classification number: C23C16/0281 ,  C23C16/047 ,  C23C16/18

Abstract: A method of creating a layer of a target deposit-material, in a first target pattern, on a substrate surface. The substrate surface is placed in a vacuum and exposed to a first chemical vapor, having precursor molecules for a seed deposit-material, thereby forming a first substrate surface area that has adsorbed the precursor molecules. Then, a charged particle beam is applied to the first substrate surface area in a second target pattern, largely identical to the first target pattern thereby forming a seed layer in a third target pattern. The seed layer is exposed to a second chemical vapor, having target deposit-material precursor molecules, which are adsorbed onto the seed layer. Finally, a laser beam is applied to the seed layer and neighboring area, thereby forming a target deposit-material layer over and about the seed layer, where exposed to the laser beam.

Abstract translation: 在基板表面上以第一目标图案形成目标沉积物层的方法。 将基板表面放置在真空中并暴露于具有用于种子沉积物材料的前体分子的第一化学蒸气，从而形成吸附了前体分子的第一基底表面区域。 然后，将带电粒子束以与第一目标图案大致相同的第二目标图案施加到第一基板表面区域，从而形成第三目标图案中的种子层。 种子层暴露于第二化学蒸气，其具有吸附在种子层上的目标沉积物前体分子。 最后，将激光束施加到种子层和相邻区域，从而在暴露于激光束的种子层上方和周围形成目标沉积物层。

公开(公告)号：EP2309020A1

公开(公告)日：2011-04-13

申请号：EP10178148.2

申请日：2010-09-22

Applicant: FEI COMPANY

Inventor： Lobo, Charlene ,  Toth, Milos ,  Randolph, Steven ,  Chandler, Clive

IPC: C23C14/00 ,  C23C14/04 ,  C23C14/22 ,  C23C14/46 ,  C23C14/54 ,  C23C14/58

CPC classification number: C23C14/0031 ,  C23C14/04 ,  C23C14/048 ,  C23C14/221 ,  C23C14/46 ,  C23C14/54 ,  C23C14/548 ,  C23C14/5846 ,  C23C14/5873

Abstract: A system for beam-induced deposition or etching, in which a charged particle or laser beam can be directed to a work piece within a single vacuum chamber, either normally incident or at an angle. Simultaneously with beam illumination of the work piece, a deposition or etch precursor gas is co-injected or premixed with a purification compound and (optionally) a carrier gas prior to injection into the process chamber. The beam decomposes the deposition precursor gas to deposit a film only in areas illuminated by the beam, or decomposes the etch precursor gas to etch a film only in areas illuminated by the beam. Undesired impurities such as carbon in the deposited film are removed during film growth by interaction with adsorbed species on the work piece surface that are generated by interaction of the beam with adsorbed molecules of the film purification compound. Alternatively, the film purification compound can be used to inhibit oxidation of the material etched by the etch precursor gas. By co-injecting or premixing the deposition or etch precursor gas and film purification compound prior to injection, the deposition or etch process may be optimized with respect to growth/etch rate and achievable material purity.

Abstract translation: 用于束诱导沉积或蚀刻的系统，其中带电粒子或激光束可以被定向到单个真空室内的工件，正常入射或以一定角度。 在工件的光束照射的同时，沉积或蚀刻前体气体在注入到处理室之前与净化化合物和（任选的）载气共注入或预混合。 光束分解沉积前体气体以仅在由光束照射的区域中沉积膜，或者分解蚀刻前体气体以仅在由光束照射的区域中蚀刻膜。 通过与通过膜与纯化组合物的吸附分子的相互作用产生的工件表面上的吸附物质的相互作用，在膜生长过程中，除去沉积膜中的不期望的杂质如碳。 或者，膜纯化化合物可用于抑制由蚀刻前体气体蚀刻的材料的氧化。 通过在注入之前共沉积或预混合沉积或蚀刻前体气体和膜纯化化合物，可以相对于生长/蚀刻速率和可实现的材料纯度优化沉积或蚀刻工艺。

公开(公告)号：EP2191927A1

公开(公告)日：2010-06-02

申请号：EP09176974.5

申请日：2009-11-25

Applicant: FEI COMPANY

Inventor： Straw, Marcus ,  Toth, Milos ,  Utlaut, Mark ,  Randolph, Steven ,  Lysaght, Michael

IPC: B23K26/18 ,  B23K26/36 ,  B23K26/06 ,  G03F7/004 ,  G03F7/20

CPC classification number: G21G5/00 ,  B23K26/0624 ,  B23K26/0661 ,  B23K26/18 ,  B23K2201/40 ,  B23K2201/42 ,  G03F7/70383 ,  H01J37/228 ,  H01J2237/31749

Abstract: Improved method of and system for substrate micromachining is described. Preferred embodiments of the present invention provide improved methods for the utilization of charged particle beam masking and laser ablation. A combination of the advantages of charged particle beam mask fabrication and ultra short pulse laser ablation are used to significantly reduce substrate processing time and improve lateral resolution and aspect ratio of features machined by laser ablation to preferably smaller than the diffraction limit of the machining laser.

Abstract translation: 描述了一种用于微机械加工的基材的改进的方法和系统。 本发明的消融的优选实施例提供了带电粒子束掩模和激光的利用的改进方法。 的带电粒子束掩模制造和超短脉冲激光烧蚀的优点的组合使用显着地降低基片的处理时间，提高横向分辨率和通过激光烧蚀到优选比加工激光的衍射极限更小的加工特征的纵横比。