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    Forming narrow line width patterns by electron beam irradiation - using surface migratable resist and pref. non-back-scattering substrate
    21.
    发明专利
    Forming narrow line width patterns by electron beam irradiation - using surface migratable resist and pref. non-back-scattering substrate 未知

    公开(公告)号：DE2935615A1

    公开(公告)日：1980-08-21

    申请号：DE2935615

    申请日：1979-09-04

    Applicant: IBM

    Inventor： BROERS ALEC NIGEL ,  CUOMO JEROME JOHN ,  LAIBOWITZ ROBERT BENJAMIN ,  MOLZEN JUN WALTER WILLIAM

    IPC: G03F7/00 ,  G03F7/004 ,  G03F7/20 ,  H01L21/027 ,  H01L21/312 ,  H05K3/10

    Abstract: In formation of patterns by electron beam irradiation of resist, the resist is a surface migratable resist provided in thickness less than thickness required for pattern formation. Pref. the resist is formed on a thin film substrate supported by a non-electron backscattering substrate. The resist is exposed to a focussed electron beam to convert and fix the resist until the required pattern thickness is reached. Exposure duration control is esp. achieved by monitoring electron scattering by the converted and fixed resist. The nonelectron backscattering substrate is pref. Si, Si3N4, SiO2, Al2O3, polyimide, collodion or C. The resist is organic material, esp. silicone oil or tetraphenyl-tegramethyl-trisiloxane. Pattern line widths 100A can be formed as method avoids raggedness at the edges and provides control of pattern thickness and width. The resist pattern is useful in electrical contact control and light modulation, and may be used in situ, or may be used to transfer the pattern to another substrate for device formation using 20-50A X-ray irradiation.

    22.
    发明专利
    未知

    公开(公告)号：DE2845074A1

    公开(公告)日：1979-05-10

    申请号：DE2845074

    申请日：1978-10-17

    Applicant: IBM

    Inventor： CUOMO JEROME JOHN ,  GAMBINO RICHARD JOSEPH ,  HARPER JAMES MCKELL EDWIN

    IPC: C23F4/00 ,  H01J37/34 ,  H01L21/302 ,  H01L21/3065 ,  C23C15/00

    Abstract: Bombardment some intermetallic compounds above a sufficient target voltage Vo can be used for etching substrates. Etching a substrate located in an evacuated chamber involves bombardment of an intermetallic compound or alloy comprising for example Au, Pt, etc. and a metallic element such as Eu, La, Cs, etc. with ions so that a large flux of negative Au, Pt, etc. ions is produced which etches a substrate located nearby. Such bombardment is achieved by placing an Au, Pt, etc. intermetallic composition target in a sputtering chamber using an argon sputtering gas, located opposite from a substrate. A gold alloy or compound target can be SmAu, EuAu, LaAu, CsAu, etc. The target of Au, Pt, etc. and a rare earth element, etc. is bombarded by sputtering gas atoms excited by RF or D.C. energy, creating negative metal ions by sputtering. Instead of depositing upon the substrate, the negative ions cause a cascade of energetic sputtering gas atoms and metal atoms to etch the substrate surface directly beneath the target as outlined by ground shields. Outside that region negative ion and rare earth metals deposit on the substrate. Bombardment with an ion gun, neutral atoms or energetic particle sources or an ionic molecular source may produce negative ions. A use is ion milling. A target material is useful as a negative ion source of metal B in an intermetallic compound of metals A and B if A has ionization potential IA and B has electron affinity EAB such that IA-EAB > about 3.4 electron volts or if there is a electronegativity difference DELTA X greater than about 2.55.

    SUPERCONDUCTIVE TUNNELING DEVICE
    23.
    发明专利
    SUPERCONDUCTIVE TUNNELING DEVICE 未知

    公开(公告)号：GB1283690A

    公开(公告)日：1972-08-02

    申请号：GB5195670

    申请日：1970-11-02

    Applicant: IBM

    Inventor： CUOMO JEROME JOHN ,  LAIBOWITZ ROBERT BENJAMIN ,  MAYADAS ASHOK FRANK ,  ROSENBERG ROBERT

    IPC: H01L27/00 ,  H01L39/00 ,  H01L39/22

    Abstract: 1283690 Superconductor devices INTERNATIONAL BUSINESS MACHINES CORP 2 Nov 1970 [12 Nov l969] 51956/70 Heading HlK In a tunnelling device having a pair of superconductive electrodes separated by a barrier, at least one of the electrodes is single crystalline. The device may form a Josephson junction. The devices are produced by depositing the first electrode on a single crystal substrate, for example by RF or DC sputtering, thermal evaporation, or chemical vapour transport. The barrier layer is then formed for example by thermal oxidation, anodization, ion implantation, sputtering, or evaporation, and may be monocrystalline or amorphous, and the second electrode is then deposited. It is stated that the top electrode may be monocrystalline even if the barrier layer is amorphous providing the latter layer is thin. Examples of in-line and cross-film tunnelling cryotrons are described. A triode structure comprising one electrode separated from two further electrodes by tunnelling junctions (Fig. 6) and a known cryogenic memory array (Fig. 8) modified by utilizing monocrystalline electrodes and barrier layers are also described. The Specification contains a list of materials suitable for the substrate, electrodes and barrier layer.

    26.
    发明专利
    未知

    公开(公告)号：DE3689428T2

    公开(公告)日：1994-06-23

    申请号：DE3689428

    申请日：1986-04-08

    Applicant: IBM

    Inventor： CUOMO JEROME JOHN ,  KAUFMAN HAROLD RICHARD ,  ROSSNAGEL STEPHEN MARK

    IPC: H01J37/077 ,  H01J1/02 ,  H01J3/02 ,  H01J37/073

    Abstract: A high current density hollow cathode electron beam source for use in various E-beam apparatus is described. Bombardment of an electron emissive surface within the hollow cathode by energetic gas ions causes electrons to be emitted by secondary emission rather than thermionic emission effects. Once initialized by an external ionization voltage the device is essentially self sustaining and operates near room temperature, rather than at thermionic emission temperatures, and with reduced voltages. … The drawing shows the hollow cathode into which plasma gas is introduced via port 40 and the electron beam exits via aperture 36 to grid 58. Ionization of the gas is initiated by voltage source 54 and the electron beam is sustained by voltage 57.

    27.
    发明专利
    未知

    公开(公告)号：DE3682954D1

    公开(公告)日：1992-01-30

    申请号：DE3682954

    申请日：1986-05-13

    Applicant: IBM

    Inventor： CUOMO JEROME JOHN ,  KAUFMAN HAROLD RICHARD ,  ROSSNAGEL STEPHEN MARK

    IPC: C23F4/00 ,  C23C14/35 ,  H01J37/34

    Abstract: A plasma sputter etching/deposition system comprising an electron-emitting hollow cathode arc- source 20 combined with a conventional plasma sputter etching/deposition system such as a magnetron 13, 17. The electrons emitted are coupled into the intrinsic high energy, e.g., magnetic filed 15 and are accelerated by the plasma potential and cause a significant increase plasma density. The resultant combination allows much greater sputtering/deposition efficiency than was possible with previous devices. According to a further aspect of the invention, switched operation is possible, whereby etching may vary from isotropic to anisotropic. A side discharge hollow cathode structure - (not shown) is also described for enhancing certain sputtering/deposition processes, wherein electrons may be emitted from one or more openings at the side of a hollow cathode chamber to achieve more uniform electron emission in a large process chamber.

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