公开(公告)号：GB2504418A

公开(公告)日：2014-01-29

申请号：GB201319175

申请日：2012-04-04

Applicant: IBM

Inventor： YANG CHIH-CHAO ,  GATES STEPHEN M ,  LI BAOZHEN ,  EDELSTEIN DANIEL C

IPC: H01L23/525

Abstract: An improved electrical-fuse (e-fuse) device (200) including a dielectric layer (102) having a first top surface (108), two conductive features (104, 106) embedded in the dielectric layer (102) and a fuse element (122). Each conductive feature (104, 106) has a second top surface (110, 112) and a metal cap (114, 116) directly on the second top surface (110, 112). Each metal cap (114, 116) has a third top surface (118, 120) that is above the first top surface (108) of the dielectric layer (102). The fuse element (122) is on the third top surface (118, 120) of each metal cap (114, 116) and on the first top surface (108) of the dielectric layer (102). A method of forming the e-fuse device (200) is also provided.

公开(公告)号：DE69924794D1

公开(公告)日：2005-05-25

申请号：DE69924794

申请日：1999-07-21

Applicant: IBM

Inventor： BLACK CHARLES T ,  GATES STEPHEN M ,  MURRAY CHRISTOPHER B ,  SUN SHOUHENG

IPC: G11B5/712 ,  G11B5/62 ,  G11B5/738 ,  G11B5/842 ,  H01F1/00 ,  H01F1/047 ,  G11B5/70 ,  G11B5/72

Abstract: A magnetic storage medium is disclosed which is formed from a layer of substantially uniformly spaced-apart magnetic nanoparticles of substantially uniform diameter disposed upon a surface of a substrate, with a coating, preferably of abrasion-resistant material, applied to adhere the nanoparticles to the substrate and to maintain their substantially uniform spaced-apart relationship. The nanoparticles are formed from a magnetic material selected from the group consisting of elements Co, Fe, Ni, Mn, Sm, Nd, Pr, Pt, Gd, an intermetallic compound of the aforesaid elements, a binary alloy of said elements, a ternary alloy of said elements, an oxide of Fe further comprising at least one of said elements other than Fe, barium ferrite, and strontium ferrite.

公开(公告)号：AU2003217368A8

公开(公告)日：2003-09-09

申请号：AU2003217368

申请日：2003-02-06

Applicant: IBM

Inventor： GATES STEPHEN M ,  MCGAHAY VINCENT J ,  FITZSIMMONS JOHN A

IPC: H01L23/26 ,  H01L23/522 ,  H01L23/532 ,  H01L29/41

Abstract: An integrated circuit structure comprises a main dielectric layer having a top surface. A cavity having sidewalls is formed in the main dielectric layer. A liner is formed on the sidewalls of the cavity. A metal conductor such as copper is formed over the liner filling the lined cavity. A getter layer is formed in the structure which combines with oxygen/moisture to form inert reaction products thereof. The getter layer can be either a conductive material which can be included in the liner or a dielectric layer which can be formed on top of the main dielectric layer, buried in the main dielectric layer or below the main dielectric layer.

公开(公告)号：DE602004028922D1

公开(公告)日：2010-10-14

申请号：DE602004028922

申请日：2004-03-17

Applicant: IBM

Inventor： GATES STEPHEN M ,  GRILL ALFRED

IPC: C09C1/00 ,  H01L21/312 ,  H01L21/316

公开(公告)号：AU2003217368A1

公开(公告)日：2003-09-09

申请号：AU2003217368

申请日：2003-02-06

Applicant: IBM

Inventor： FITZSIMMONS JOHN A ,  GATES STEPHEN M ,  MCGAHAY VINCENT J

IPC: H01L23/26 ,  H01L23/522 ,  H01L23/532

Abstract: An integrated circuit structure comprises a main dielectric layer having a top surface. A cavity having sidewalls is formed in the main dielectric layer. A liner is formed on the sidewalls of the cavity. A metal conductor such as copper is formed over the liner filling the lined cavity. A getter layer is formed in the structure which combines with oxygen/moisture to form inert reaction products thereof. The getter layer can be either a conductive material which can be included in the liner or a dielectric layer which can be formed on top of the main dielectric layer, buried in the main dielectric layer or below the main dielectric layer.

公开(公告)号：DE68901055D1

公开(公告)日：1992-04-30

申请号：DE68901055

申请日：1989-01-27

Applicant: IBM

Inventor： GATES STEPHEN M ,  LIEHR MICHAEL ,  RENIER MICHEL G E G ,  RUBLOFF GARY W

IPC: B23P19/00 ,  B23Q7/00 ,  B61D47/00 ,  B65G25/02 ,  B65G35/06 ,  B65G47/52 ,  B65G49/07 ,  B65G35/00

公开(公告)号：GB2504418B

公开(公告)日：2015-03-11

申请号：GB201319175

申请日：2012-04-04

Applicant: IBM

Inventor： YANG CHIH-CHAO ,  GATES STEPHEN M ,  LI BAOZHEN ,  EDELSTEIN DANIEL C

IPC: H01L23/525

公开(公告)号：SG145626A1

公开(公告)日：2008-09-29

申请号：SG2008010068

申请日：2008-02-05

Applicant: CHARTERED SEMICONDUCTOR MFG ,  IBM ,  SAMSUNG ELECTRONICS CO LTD

Inventor： RESTAINO DARRYL D ,  WIDODO JOHNNY ,  BONILLA GRISELDA ,  DIMITRAKOPOULOS CHRISTOS D ,  GATES STEPHEN M ,  KIM JAE H ,  LANE MICHAEL W ,  LIU XIAO H ,  NGUYEN SON V ,  SHAW THOMAS M

Abstract: BEOL INTERCONNECT STRUCTURES WITH IMPROVED RESISTANCE TO STRESS A chip is provided which includes a back-end-of-line ("BEOL") interconnect structure. The BEOL interconnect structure includes a plurality of interlevel dielectric ("ILD") layers which include a dielectric material curable by ultraviolet ("UV") radiation. A plurality of metal interconnect wiring layers are embedded in the plurality of ILD layers. Dielectric barrier layers cover the plurality of metal interconnect wiring layers, the dielectric barrier layers being adapted to reduce diffusion of materials between the metal interconnect wiring layers and the ILD layers. One of more of the dielectric barrier layers is adapted to retain compressive stress while withstanding UV radiation sufficient to cure the dielectric material of the ILD layers, making the BEOL structure better capable of avoiding deformation due to thermal and/or mechanical stress.

公开(公告)号：DE69924794T2

公开(公告)日：2006-03-09

申请号：DE69924794

申请日：1999-07-21

Applicant: IBM

Inventor： BLACK CHARLES T ,  GATES STEPHEN M ,  MURRAY CHRISTOPHER B ,  SUN SHOUHENG

IPC: G11B5/712 ,  G11B5/62 ,  G11B5/70 ,  G11B5/72 ,  G11B5/738 ,  G11B5/842 ,  H01F1/00 ,  H01F1/047

Abstract: A magnetic storage medium is disclosed which is formed from a layer of substantially uniformly spaced-apart magnetic nanoparticles of substantially uniform diameter disposed upon a surface of a substrate, with a coating, preferably of abrasion-resistant material, applied to adhere the nanoparticles to the substrate and to maintain their substantially uniform spaced-apart relationship. The nanoparticles are formed from a magnetic material selected from the group consisting of elements Co, Fe, Ni, Mn, Sm, Nd, Pr, Pt, Gd, an intermetallic compound of the aforesaid elements, a binary alloy of said elements, a ternary alloy of said elements, an oxide of Fe further comprising at least one of said elements other than Fe, barium ferrite, and strontium ferrite.

公开(公告)号：AT293829T

公开(公告)日：2005-05-15

申请号：AT99305758

申请日：1999-07-21

Applicant: IBM

Inventor： BLACK CHARLES T ,  GATES STEPHEN M ,  MURRAY CHRISTOPHER B ,  SUN SHOUHENG

IPC: G11B5/712 ,  G11B5/62 ,  G11B5/738 ,  G11B5/842 ,  H01F1/00 ,  H01F1/047 ,  G11B5/70 ,  G11B5/72

Abstract: A magnetic storage medium is disclosed which is formed from a layer of substantially uniformly spaced-apart magnetic nanoparticles of substantially uniform diameter disposed upon a surface of a substrate, with a coating, preferably of abrasion-resistant material, applied to adhere the nanoparticles to the substrate and to maintain their substantially uniform spaced-apart relationship. The nanoparticles are formed from a magnetic material selected from the group consisting of elements Co, Fe, Ni, Mn, Sm, Nd, Pr, Pt, Gd, an intermetallic compound of the aforesaid elements, a binary alloy of said elements, a ternary alloy of said elements, an oxide of Fe further comprising at least one of said elements other than Fe, barium ferrite, and strontium ferrite.