公开(公告)号：DE102009002065A1

公开(公告)日：2009-10-15

申请号：DE102009002065

申请日：2009-03-31

Applicant: INFINEON TECHNOLOGIES AG

Inventor： BAYERER REINHOLD ,  GOERLICH JENS ,  GUTH KARSTEN ,  HOHLFELD OLAF

IPC: B23K35/28 ,  B23K35/26

Abstract: A module includes a metallized substrate including a metal layer, a base plate, and a joint joining the metal layer to the base plate. The joint includes solder contacting the base plate and an inter-metallic zone contacting the metal layer and the solder. The inter-metallic zone has spikes up to 100 μm and a roughness (Rz) of at least 20 μm.

公开(公告)号：DE102006026799B3

公开(公告)日：2007-08-23

申请号：DE102006026799

申请日：2006-06-07

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SCHNEEGANS MANFRED ,  GUTH KARSTEN ,  GALESIC IVAN

IPC: H01R43/02 ,  H01L21/58 ,  H01L21/673

Abstract: The bonding head (1) comprises a pressure plate (2) for pressing a semiconductor chip (4) against a substrate (8). The pressure plate comprises a surface (3) for the incorporation of the semiconductor chip. A device is provided for the variation of the surface curvature of the pressure plate. The surface curvature of the pressure plate is piezo-electrically modified. The pressure plate is made of piezo-ceramic material. Independent claims are also included for the following: (1) a bonding tool with a bonding head (2) a method for the production of a semiconductor construction unit.

公开(公告)号：DE102009002065B4

公开(公告)日：2018-12-13

申请号：DE102009002065

申请日：2009-03-31

Applicant: INFINEON TECHNOLOGIES AG

Inventor： BAYERER REINHOLD ,  GOERLICH JENS ,  GUTH KARSTEN ,  HOHLFELD OLAF

IPC: B23K35/28 ,  B23K35/26 ,  H01L23/488

Abstract: Lot umfassend ein Weichlot mit einem Schmelzpunkt von weniger als 450°C, in das eine Anzahl von Teilchen (408) eingebettet ist, die jeweils eine Länge (l408) größer 50 µm aufweisen und die in ihrer Gesamtheit einen Anteil von mindestens 20 Vol% aber von weniger als 60 Vol% des Lotes (600) ausmachen, wobei die Teilchen (408) aus einer intermetallischen Phase gebildet oder mit einer intermetallischen Phase beschichtet sind.

公开(公告)号：DE102010037439B4

公开(公告)日：2016-07-21

申请号：DE102010037439

申请日：2010-09-09

Applicant: INFINEON TECHNOLOGIES AG

Inventor： EDER HANNES ,  NIKITIN IVAN ,  SCHNEEGANS MANFRED ,  GOERLICH JENS ,  GUTH KARSTEN ,  HEINRICH ALEXANDER

IPC: H01L21/58 ,  H01L23/12 ,  H05K3/32

Abstract: Verfahren, umfassend: Bereitstellen eines Halbleiterchips (10), wobei Halbleitermaterial an einer ersten Oberfläche (11) des Halbleiterchips (10) exponiert ist; Platzieren des Halbleiterchips (10) über einem Träger (12), wobei die erste Oberfläche (11) dem Träger (12) zugewandt ist und elektrisch leitendes Material (13) zwischen dem Halbleiterchip (10) und dem Träger (12) angeordnet ist; und Zuführen von Wärme, um den Halbleiterchip (10) an dem Träger (12) anzubringen, wobei das elektrisch leitende Material (13) beim Zuführen der Wärme gesintert wird.

公开(公告)号：DE102009026480A1

公开(公告)日：2010-04-15

申请号：DE102009026480

申请日：2009-05-26

Applicant: INFINEON TECHNOLOGIES AG

Inventor： GUTH KARSTEN ,  NIKITIN IVAN

IPC: H01L21/603 ,  H01L23/485 ,  H01L25/18

Abstract: A method comprises applying a paste comprising metal grains, a solvent, and a sintering inhibitor to one of a die and a metal layer. The method comprises evaporating the solvent in the paste and placing the one of the die and the metal layer on the other of the die and the metal layer such that the paste contacts the die and the metal layer. The method comprises applying a force to the one of the die and the metal layer and decomposing the sintering inhibitors to form a sintered joint joining the die to the metal layer.

公开(公告)号：DE102009000587A1

公开(公告)日：2009-09-17

申请号：DE102009000587

申请日：2009-02-03

Applicant: INFINEON TECHNOLOGIES AG

Inventor： GUTH KARSTEN ,  NIKITIN IVAN

IPC: H01L23/485 ,  H01L21/60

Abstract: A module includes a substrate including a first copper surface and a semiconductor chip. The module includes a first sintered joint bonding the semiconductor chip directly to the first copper surface.

公开(公告)号：DE102008033651A1

公开(公告)日：2009-01-22

申请号：DE102008033651

申请日：2008-07-17

Applicant: INFINEON TECHNOLOGIES AG

Inventor： GUTH KARSTEN ,  HARTUNG HANS ,  SPECKELS ROLAND

IPC: H01L21/58

Abstract: An apparatus and method for producing semiconductor modules is disclosed. One embodiment provides for bonding at least one semiconductor die onto a carrier including a support film strip, the support film having applied an adhesive layer to one of its surfaces to attach the semiconductor die, and a pressure tool to press the semiconductor die and the support film strip onto the carrier to permanently contact the at least one semiconductor die to the carrier.

公开(公告)号：DE102006003735A1

公开(公告)日：2007-08-09

申请号：DE102006003735

申请日：2006-01-26

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SPECKELS ROLAND ,  GUTH KARSTEN

IPC: H05K3/30 ,  H01L21/60 ,  H05K13/04

Abstract: An arrangement for mounting a multiplicity of components (9, 10), particularly with irregular surface topography, on a support (7) using an assembly tool which has a tool substructure (5) and a tool superstructure (6), where the tool substructure (5) is designed to receive the support and the components which are to be mounted thereon, and the tool superstructure (6) has, in addition to an arrangement (11, 12) for transmitting assembly forces, an arrangement for compensating for tilts between the components and the support and/or an arrangement for compensating for irregular surface topologies.