公开(公告)号：DE102005058654A1

公开(公告)日：2007-06-14

申请号：DE102005058654

申请日：2005-12-07

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HOSSEINI KHALIL ,  MAHLER JOACHIM ,  RIEDL EDMUND ,  GALESIC IVAN ,  ROESL KONRAD

IPC: H01L21/60

Abstract: A method for the planar joining of components of semiconductor devices involves coating the components with diffusion materials on their upper sides and rear sides, respectively. Subsequently, the components to be joined one on the other are introduced into a reducing atmosphere. The components are aligned and a compressive pressure is exerted on the aligned components. While heating up the components to be joined in the reducing atmosphere to a diffusion joining temperature, isothermal solidification takes place, the diffusion joining temperature lying below the melting temperature of the forming diffusion joint of the joined material.

公开(公告)号：DE102008037835B4

公开(公告)日：2014-09-25

申请号：DE102008037835

申请日：2008-08-14

Applicant: INFINEON TECHNOLOGIES AG

Inventor： GALESIC IVAN ,  MAHLER JOACHIM ,  HEINRICH ALEXANDER ,  HOSSEINI KHALIL

IPC: H01L21/58 ,  H01L23/16

Abstract: Elektronische Komponente, umfassend: ein Metallsubstrat; einen Halbleiter-Chip, der für eine Anbringung einer gesamten unteren Oberfläche des Halbleiter-Chips an dem Metallsubstrat ausgelegt ist; und eine zwischen dem Metallsubstrat und der unteren Oberfläche des Halbleiter-Chips positionierte Pufferschicht, die dafür ausgelegt ist, den Halbleiter-Chip und das Metallsubstrat mechanisch zu entkoppeln, und aus einem Metall gebildet ist, das dehnbarer ist als das Metall des Metallsubstrats, wobei sich die Pufferschicht über weniger als eine gesamte untere Oberfläche des Halbleiter-Chips erstreckt und der Halbleiter-Chip sowohl an das Metallsubstrat als auch an die Pufferschicht gebondet ist.

公开(公告)号：DE102006026799B3

公开(公告)日：2007-08-23

申请号：DE102006026799

申请日：2006-06-07

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SCHNEEGANS MANFRED ,  GUTH KARSTEN ,  GALESIC IVAN

IPC: H01R43/02 ,  H01L21/58 ,  H01L21/673

Abstract: The bonding head (1) comprises a pressure plate (2) for pressing a semiconductor chip (4) against a substrate (8). The pressure plate comprises a surface (3) for the incorporation of the semiconductor chip. A device is provided for the variation of the surface curvature of the pressure plate. The surface curvature of the pressure plate is piezo-electrically modified. The pressure plate is made of piezo-ceramic material. Independent claims are also included for the following: (1) a bonding tool with a bonding head (2) a method for the production of a semiconductor construction unit.

公开(公告)号：DE102005051811A1

公开(公告)日：2007-05-03

申请号：DE102005051811

申请日：2005-10-27

Applicant: INFINEON TECHNOLOGIES AG

Inventor： OTREMBA RALF ,  GALESIC IVAN ,  LANDAU STEFAN

IPC: H01L23/12 ,  H01L21/50 ,  H01L23/488

Abstract: A semiconductor component (1) with a semiconductor chip (3) in surface conductor frame technology comprises a chip carrier (8) fixed on a chip connection surface (4) and having a metallic buffer layer (5) on the chip conductive surface. There is a cover layer (6) on this that can be materially connected to the back side of the chip. An independent claim is also included for a production process for the above.

公开(公告)号：DE102008051542A1

公开(公告)日：2009-05-14

申请号：DE102008051542

申请日：2008-10-14

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MAHLER JOACHIM ,  BEHRENS THOMAS ,  GALESIC IVAN

IPC: H01L23/29 ,  H01L21/56

Abstract: An integrated circuit device includes a semiconductor chip with a metallization layer on the chip. A gas-phase deposited insulation layer is disposed on the metallization layer.

公开(公告)号：DE102008037835A1

公开(公告)日：2009-02-26

申请号：DE102008037835

申请日：2008-08-14

Applicant: INFINEON TECHNOLOGIES AG

Inventor： GALESIC IVAN ,  MAHLER JOACHIM ,  HEINRICH ALEXANDER ,  HOSSEINI KHALIL

IPC: H01L21/58 ,  H01L23/16

Abstract: An electronic component includes a metal substrate, a semiconductor chip configured to be attached to the metal substrate, and a buffer layer positioned between the metal substrate and the semiconductor chip configured to mechanically decouple the semiconductor chip and the metal substrate. The buffer layer extends across less than an entire bottom surface of the semiconductor chip.

公开(公告)号：DE102004058878A1

公开(公告)日：2006-06-14

申请号：DE102004058878

申请日：2004-12-06

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HOSSEINI KHALIL ,  GALESIC IVAN ,  ROESL KONRAD ,  MAHLERL JOACHIM ,  RIEDL EDMUND

IPC: H01L23/13 ,  H01L21/58

Abstract: The invention relates to a semiconductor component (4) with at least one chip (2) and one substrate (7). The chip (2) has a rear side (6) that is connected to a first surface (8) of the substrate (7) by means of diffusion soldering. To this end, recesses (11) are made in the first surface (8) of the substrate (7) whereby having intermetallic phases that are formed during the diffusion soldering. The invention also relates to methods for producing a semiconductor component (4) involving the following steps: coating a rear side (6) of a chip (2) with a soldering metal that is suited for diffusion soldering; manufacturing the substrate (7) with a first surface (8) that is made of a material suited for diffusion soldering; making recesses (11) in the first surface (8) of the substrate (7), and; connecting the rear side (6) of the chip (2) to the first surface (8) of the substrate (7) by diffusion soldering.

公开(公告)号：DE102004021633B4

公开(公告)日：2006-04-06

申请号：DE102004021633

申请日：2004-05-03

Applicant: INFINEON TECHNOLOGIES AG

Inventor： RIEDL EDMUND ,  OTREMBA RALF ,  GALESIC IVAN

IPC: H01L21/58 ,  H01L21/44 ,  H01L21/60 ,  H01L21/603 ,  H01L23/12 ,  H01L23/13 ,  H01L23/488

公开(公告)号：DE102004021633A1

公开(公告)日：2005-12-01

申请号：DE102004021633

申请日：2004-05-03

Applicant: INFINEON TECHNOLOGIES AG

Inventor： RIEDL EDMUND ,  OTREMBA RALF ,  GALESIC IVAN

IPC: H01L21/44 ,  H01L21/58 ,  H01L21/60 ,  H01L21/603 ,  H01L23/12 ,  H01L23/13 ,  H01L23/488