公开(公告)号：DE10130936B4

公开(公告)日：2004-04-29

申请号：DE10130936

申请日：2001-06-27

Applicant: INFINEON TECHNOLOGIES AG

Inventor： REISINGER HANS ,  GUTSCHE MARTIN ,  SCHUPKE KRISTIN ,  JAKSCHIK STEFAN ,  LEONHARDT MATTHIAS ,  SEIDL HARALD ,  SCHROEDER UWE ,  HECHT THOMAS

IPC: C23C16/02 ,  C23C16/44 ,  C23C16/455 ,  H01L21/306 ,  H01L21/316 ,  H01L21/8242 ,  C30B29/16

Abstract: The present invention provides a method for fabricating a semiconductor component having a substrate (1) and a dielectric layer (70) provided on or in the substrate (1), the dielectric layer (7) being deposited in alternating self-limiting monolayer form, in the form of at least two different precursors, by means of an ALD process. There is provision for conditioning of the surface of the substrate (1) prior to the deposition of a first monolayer of a first precursor with respect to a reactive ligand of the first precursor.

公开(公告)号：DE59807589D1

公开(公告)日：2003-04-24

申请号：DE59807589

申请日：1998-12-17

Applicant: INFINEON TECHNOLOGIES AG

Inventor： GRUENING ULRIKE ,  LEHMANN VOLKER ,  STENGL REINHARD ,  WENDT HERMANN ,  REISINGER HANS

IPC: G02B6/12 ,  G02B6/122 ,  G02B6/13

Abstract: An optical structure includes a substrate having semiconductor material and a grating structure. The grating structure has the property of emitting at least one frequency band so that light having a frequency from that frequency band cannot propagate in the grating structure. The grating structure has a configuration of pores and a defective region. The pores are disposed outside the defective region in a periodic array, and the periodic array is disturbed in the defective region. A surface of the grating structure is provided with a conductive layer at least in the vicinity of the defective region. A method for producing the optical structure is also provided.

公开(公告)号：DE10130936A1

公开(公告)日：2003-01-16

申请号：DE10130936

申请日：2001-06-27

Applicant: INFINEON TECHNOLOGIES AG

Inventor： REISINGER HANS ,  GUTSCHE MARTIN ,  SCHUPKE KRISTIN ,  JAKSCHIK STEFAN ,  LEONHARDT MATTHIAS ,  SEIDL HARALD ,  SCHROEDER UWE ,  HECHT THOMAS

IPC: C23C16/02 ,  C23C16/44 ,  C23C16/455 ,  H01L21/306 ,  H01L21/316 ,  H01L21/8242 ,  C30B29/16

Abstract: Process for producing a semiconductor element having a dielectric layer (70) deposited on a substrate (1) in a monolayer alternately in the form of at least two different precursors using an ALD process comprises conditioning of the surface of the substrate before deposition of the first monolayer of a first precursor with regard to a reactive ligand of the first precursor. Preferred Features: A silicon oxide layer is removed from the surface of the substrate during conditioning. OH-, H- or H2-conditioning of the surface of the substrate is carried out.

公开(公告)号：DE59704729D1

公开(公告)日：2001-10-31

申请号：DE59704729

申请日：1997-07-08

Applicant: INFINEON TECHNOLOGIES AG

Inventor： REISINGER HANS

IPC: G11C16/02 ,  G11C11/56 ,  H01L21/8247 ,  H01L27/115 ,  H01L29/788 ,  H01L29/792

Abstract: PCT No. PCT/DE97/01432 Sec. 371 Date Jan. 28, 1999 Sec. 102(e) Date Jan. 28, 1999 PCT Filed Jul. 8, 1997 PCT Pub. No. WO98/06101 PCT Pub. Date Feb. 12, 1998In order to increase the storage density, in a memory cell arrangement having MOS transistors as memory cells which has as gate dielectric, a dielectric triple layer having a first silicon oxide layer, a silicon nitride layer and a second silicon oxide layer, the silicon oxide layers each having a thickness of at least 3 nm, the information is stored using multi-value logic with up to 26 values. In this case, use is made of the fact that these memory cells have a time period greater than 1000 years for data retention and their threshold voltage has a very small drift.