公开(公告)号：AU4373796A

公开(公告)日：1996-06-26

申请号：AU4373796

申请日：1995-12-05

Applicant: LAM RES CORP

Inventor： BARNES MICHAEL ,  BENJAMIN NEIL ,  HOLLAND JOHN ,  BEER RICHARD ,  VELTROP ROBERT

IPC: H05H1/46 ,  C23C16/507 ,  H01J37/32 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065

Abstract: A plasma processor for large workpieces includes a vacuum chamber having plural individually supported dielectric windows for coupling an r.f. field originating outside of the chamber into the chamber to excite the plasma. A planar coil for inductively deriving the field has plural segments with the same electrical length, each including an element connected in parallel with an element of another segment.

公开(公告)号：DE69939326D1

公开(公告)日：2008-09-25

申请号：DE69939326

申请日：1999-09-28

Applicant: LAM RES CORP

Inventor： SCHOEPP ALAN M ,  DENTY WILLIAM M ,  BARNES MICHAEL

IPC: H01L21/00 ,  H01L21/302 ,  H01J37/32 ,  H01L21/3065

Abstract: A chamber liner for use in a semiconductor process chamber and a semiconductor process chamber containing the chamber liner are disclosed. The process chamber includes a housing having an inner surface defining a chamber in which a vacuum is drawn during processing of a semiconductor wafer. The chamber liner has a plasma confinement shield with a plurality of apertures. An outer sidewall extends upwardly from the plasma confinement shield. An outer flange extends outwardly from the outer sidewall such that the outer flange extends beyond the chamber and into a space at atmospheric pressure. The chamber liner preferably further includes an inner sidewall that extends upwardly from the plasma confinement shield. The plasma confinement shield, the inner and outer sidewalls, and the outer flange are preferably integral with one another.

公开(公告)号：DE69926551T2

公开(公告)日：2006-06-08

申请号：DE69926551

申请日：1999-03-30

Applicant: LAM RES CORP

Inventor： MCMILLAN BRIAN K ,  BARNES MICHAEL ,  KAVEH FARRO F

IPC: G05D16/20

Abstract: A method and apparatus is disclosed for controlling the pressure of a reaction chamber (106) in wafer processing equipment. The disclosed apparatus and method uses a ballast port (150b) for inserting gas into the evacuation system, thereby controlling the pressure in the reaction chamber. The disclosed apparatus and method further uses estimation curves to estimate the desired position of a controlled gate valve (124) which is located between the reaction chamber and turbo pump (126). The disclosed apparatus and method achieves a set point pressure by prepositioning a throttle valve followed by repositioning the throttle valve based on the difference between a measure pressure and the set point pressure using proportional and integral control, wherein enablement of integral control is delayed for a pre-specified period.

公开(公告)号：ES2242820T3

公开(公告)日：2005-11-16

申请号：ES02028407

申请日：1999-03-30

Applicant: LAM RES CORP

Inventor： MCMILLAN BRIAN K ,  BARNES MICHAEL ,  KAVEH FARRO F

IPC: G05D16/20

Abstract: Un método para controlar la presión en una cámara de procesado que ha sido sometida a evacuación (106), que comprende los pasos de: recuperar de la memoria electrónica un valor deseado de la presión que refleje un nivel de presión deseado para la cámara de procesado (106); recuperar de la memoria electrónica un valor deseado del flujo de gas que represente un caudal de gas deseado a través de la cámara de procesado (106); obtener acceso desde la memoria electrónica (190) a una función matemática que tiene un dominio que comprende las presiones en la cámara de procesado (106) y los caudales de flujo de gas al interior de la cámara de procesado (106), y que abarca un campo que comprende las posiciones de la válvula de estrangulación (124); medir la presión dentro de la cámara de procesado (106); calcular un error de la presión igual a la diferencia entre la presión deseada y la presión medida; y situar en posición la válvula de estrangulación (124) repitiendo para ello los pasos de: (a) recuperar de la memoria electrónica (190) las ganancias: proporciona, integral y derivada, en que al menos una de dichas ganancias no es igual a cero; (b) calcular una compensación proporcional de la posición de la válvula, una compensación integral de la posición de la válvula, y una compensación derivada de la posición de la válvula aplicando para ello el error de presión a la ganancia proporcional ala ganancia integral y a la ganancia derivada, respectivamente; (c) sumar las salidas del paso (b) para proporcionar un valor que representa un caudal de flujo volumétrico; (d) dividir el valor del caudal de flujo volumétrico por un valor de la presión para obtener un cociente que represente flujo/presión; (e) aplicar el cociente a la inversa de la función matemática a la que se obtuvo acceso desde la memoria electrónica (190) para proporcionar una nueva posición de la válvula; y (f) modificar la posición de la válvula para llevarla a la nueva posición de la válvula.

公开(公告)号：DE69907890D1

公开(公告)日：2003-06-18

申请号：DE69907890

申请日：1999-03-30

Applicant: LAM RES CORP

Inventor： MCMILLIN K ,  KAVEH FARRO F ,  BARNES MICHAEL

IPC: G05D16/20

Abstract: A method and apparatus is disclosed for controlling the pressure of a reaction chamber (106) in wafer processing equipment. The disclosed apparatus and method uses a ballast port (150b) for inserting gas into the evacuation system, thereby controlling the pressure in the reaction chamber. The disclosed apparatus and method further uses estimation curves to estimate the desired position of a controlled gate valve (124) which is located between the reaction chamber and turbo pump (126). The disclosed apparatus and method achieves a set point pressure by prepositioning a throttle valve followed by repositioning the throttle valve based on the difference between a measure pressure and the set point pressure using proportional and integral control, wherein enablement of integral control is delayed for a pre-specified period.

公开(公告)号：DE69523940T2

公开(公告)日：2002-04-04

申请号：DE69523940

申请日：1995-12-05

Applicant: LAM RES CORP

Inventor： BARNES MICHAEL ,  BENJAMIN NEIL ,  HOLLAND JOHN ,  BEER RICHARD ,  VELTROP ROBERT

IPC: H05H1/46 ,  C23C16/507 ,  H01J37/32 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065

Abstract: A plasma processor for large workpieces includes a vacuum chamber having plural individually supported dielectric windows for coupling an r.f. field originating outside of the chamber into the chamber to excite the plasma. A planar coil for inductively deriving the field has plural segments with the same electrical length, each including an element connected in parallel with an element of another segment.

公开(公告)号：AU1198800A

公开(公告)日：2000-04-17

申请号：AU1198800

申请日：1999-09-28

Applicant: LAM RES CORP

Inventor： SCHOEPP ALAN M ,  DENTY WILLIAM M JR ,  BARNES MICHAEL

IPC: H01L21/302 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/00

Abstract: A chamber liner for use in a semiconductor process chamber and a semiconductor process chamber containing the chamber liner are disclosed. The process chamber includes a housing having an inner surface defining a chamber in which a vacuum is drawn during processing of a semiconductor wafer. The chamber liner has a plasma confinement shield with a plurality of apertures. An outer sidewall extends upwardly from the plasma confinement shield. An outer flange extends outwardly from the outer sidewall such that the outer flange extends beyond the chamber and into a space at atmospheric pressure. The chamber liner preferably further includes an inner sidewall that extends upwardly from the plasma confinement shield. The plasma confinement shield, the inner and outer sidewalls, and the outer flange are preferably integral with one another.