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    CHAMBER LINER FOR SEMICONDUCTOR PROCESS CHAMBERS
    2.
    发明申请
    CHAMBER LINER FOR SEMICONDUCTOR PROCESS CHAMBERS 审中-公开
    用于半导体加工室的腔室衬里

    公开(公告)号：WO0019495A3

    公开(公告)日：2000-05-25

    申请号：PCT/US9922488

    申请日：1999-09-28

    Applicant: LAM RES CORP

    Inventor： SCHOEPP ALAN M ,  DENTY WILLIAM M JR ,  BARNES MICHAEL

    IPC: H01L21/302 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/00

    CPC classification number: H01J37/32495 ,  Y10S156/916

    Abstract: A chamber liner for use in a semiconductor process chamber and a semiconductor process chamber containing the chamber liner are disclosed. The process chamber includes a housing having an inner surface defining a chamber in which a vacuum is drawn during processing of a semiconductor wafer. The chamber liner (116) has a plasma confinement shield (116c) with a plurality of apertures (116e). An outer sidewall (116b) extends upwardly from the plasma confinement shield (116c). An outer flange (116a) extends outwardly from the outer sidewall (116b) such that the outer flange (116a) extends beyond the chamber and into a space at atmospheric pressure. The chamber liner (116) preferably further includes an inner sidewall (116d) that extends upwardly from the plasma confinement shield (116c). The plasma confinement shield (116c), the inner and outer sidewalls (116d and 116b, respectively), and the outer flange (116a) are preferably integral with one another.

    Abstract translation: 公开了用于半导体处理室和包含室衬的半导体处理室的室衬。 处理室包括壳体，该壳体具有限定腔室的内表面，在处理半导体晶片期间真空被吸入其中。 室衬（116）具有带有多个孔（116e）的等离子约束屏蔽（116c）。 外侧壁（116b）从等离子体约束屏障（116c）向上延伸。 外凸缘（116a）从外侧壁（116b）向外延伸，使得外凸缘（116a）延伸超过腔室并进入大气压力下的空间。 腔室衬垫（116）优选地还包括从等离子体限制护罩（116c）向上延伸的内侧壁（116d）。 等离子体约束屏障（116c），内侧壁和外侧壁（分别为116d和116b）和外凸缘（116a）优选彼此一体化。

    METHODS FOR VERIFYING GAS FLOW RATES FROM A GAS SUPPLY SYSTEM INTO A PLASMA PROCESSING CHAMBER
    3.
    发明申请
    METHODS FOR VERIFYING GAS FLOW RATES FROM A GAS SUPPLY SYSTEM INTO A PLASMA PROCESSING CHAMBER 审中-公开
    将气体供应系统的气体流量验证为等离子体加工室的方法

    公开(公告)号：WO2007008509A3

    公开(公告)日：2009-04-23

    申请号：PCT/US2006026095

    申请日：2006-07-05

    Applicant: LAM RES CORP ,  LARSON DEAN J ,  HEFTY ROBERT C ,  TIETZ JAMES V ,  KENNEDY WILLIAM S ,  LENZ ERIC H ,  DENTY WILLIAM M JR ,  MAGNI ENRICO

    Inventor： LARSON DEAN J ,  HEFTY ROBERT C ,  TIETZ JAMES V ,  KENNEDY WILLIAM S ,  LENZ ERIC H ,  DENTY WILLIAM M JR ,  MAGNI ENRICO

    IPC: G01F25/00

    CPC classification number: G01F1/42 ,  G01F1/36 ,  G01F25/0007 ,  G05D7/0652

    Abstract: Methods of measuring gas flow rates in a gas supply system for supplying gas to a plasma processing chamber (12) are provided. In a differential flow method, a flow controller is operated at different set flow rates, and upstream orifice pressures are measured for the set flow rates at ambient conditions. The measured orifice pressures are referenced to a secondary flow verification method that generates corresponding actual gas flow rates for the different set flow rates. The upstream orifice pressures can be used as a differential comparison for subsequent orifice pressure measurements taken at any temperature condition of the chamber. In an absolute flow method, some parameters of a selected gas and orifice are predetermined, and other parameters of the gas are measured while the gas is being flowed from a flow controller at a set flow rate through an orifice.

    Abstract translation: 提供了一种测量用于向等离子体处理室（12）供应气体的气体供应系统中的气体流量的方法。 在差分流动方法中，流量控制器以不同的设定流量运行，并且在环境条件下测量设定流量的上游孔口压力。 测量的孔口压力参考二次流量验证方法，该方法为不同的设定流量产生相应的实际气体流速。 上游孔压力可以用作在室的任何温度条件下进行的随后的孔口压力测量的差分比较。 在绝对流动方法中，预定了所选择的气体和孔口的一些参数，并且在气体以流量控制器以设定流量通过孔口流动时，测量气体的其它参数。

    METHODS FOR VERIFYING GAS FLOW RATES FROM A GAS SUPPLY SYSTEM INTO A PLASMA PROCESSING CHAMBER
    7.
    发明专利
    METHODS FOR VERIFYING GAS FLOW RATES FROM A GAS SUPPLY SYSTEM INTO A PLASMA PROCESSING CHAMBER 未知

    公开(公告)号：MY155016A

    公开(公告)日：2015-08-28

    申请号：MYPI20063268

    申请日：2006-07-10

    Applicant: LAM RES CORP

    Inventor： LARSON DEAN J ,  HEFTY ROBERT C ,  TIETZ JAMES V ,  KENNEDY WILLIAM S ,  LENZ ERIC H ,  DENTY WILLIAM M JR ,  MAGNI ENRICO

    IPC: G01F25/00

    Abstract: METHOD OF MEASURING GAS FLOW RATES IN A GAS SUPPLY SYSTEM (100) FOR SUPPLYING GAS TO A PLASMA PROCESSING CHAMBER (12) ARE PROVIDED. IN A DIFFERENTIAL FLOW METHOD, A FLOW CONTROLLER IS OPERATED AT DIFFERENT SET FLOW RATES, AND UPSTREAM ORIFICE PRESSURES ARE MEASURED FOR THE SET FLOW RATES AT AMBIENT CONDITIONS. THE MEASURED ORIFICE PRESSURE ARE REFERENCED TO A SECONDARY FLOW VERIFICATION METHOD THAT GENERATES CORRESPONDING ACTUAL GAS FLOW RATES FOR THE DIFFERENT SET FLOW RATES. THE UPSTREAM ORIFICE PRESSURES CAN BE USED AS A DIFFERENTIAL COMPARISON FOR SUBSEQUENT ORIFICE PRESSURE MEASUREMENT TAKEN AT ANY TEMPERATURE CONDITION OF THE CHAMBER. IN AN ABSOLUTE FLOW METHOD, SOME PARAMETERS OF A SELECTED GAS AND ORIFICE ARE PREDETERMINED, AND OTHER PARAMETER OF THE GAS ARE MEASURED WHILE THE GAS IS BEING FLOWED FROM A FLOW CONTROLLER SET POINT CAN BE FLOWED AR ANY TIME AND AT ANY CHAMBER CONDITION, SUCH AS DURING PLASMA PROCESSING OPERATION. GAS SUPPLY SYSTEMS (100) ARE ALSO DISCLOSED.

    Chamber liner for semiconductor process chambers
    9.
    发明专利
    Chamber liner for semiconductor process chambers 未知

    公开(公告)号：AU1198800A

    公开(公告)日：2000-04-17

    申请号：AU1198800

    申请日：1999-09-28

    Applicant: LAM RES CORP

    Inventor： SCHOEPP ALAN M ,  DENTY WILLIAM M JR ,  BARNES MICHAEL

    IPC: H01L21/302 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/00

    Abstract: A chamber liner for use in a semiconductor process chamber and a semiconductor process chamber containing the chamber liner are disclosed. The process chamber includes a housing having an inner surface defining a chamber in which a vacuum is drawn during processing of a semiconductor wafer. The chamber liner has a plasma confinement shield with a plurality of apertures. An outer sidewall extends upwardly from the plasma confinement shield. An outer flange extends outwardly from the outer sidewall such that the outer flange extends beyond the chamber and into a space at atmospheric pressure. The chamber liner preferably further includes an inner sidewall that extends upwardly from the plasma confinement shield. The plasma confinement shield, the inner and outer sidewalls, and the outer flange are preferably integral with one another.

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