公开(公告)号：DE69900427D1

公开(公告)日：2001-12-13

申请号：DE69900427

申请日：1999-05-26

Applicant: LUCENT TECHNOLOGIES INC

Inventor： BAILLARGEON JAMES NELSON ,  CAPASSO FEDERICO ,  CHO ALFRED YI ,  GMACHL CLAIRE F ,  HUTCHINSON ALBERT LEE ,  SIVCO DEBORAH LEE ,  TREDICUCCI ALESSANDRO

IPC: H01S5/00 ,  H01S5/34 ,  H01S5/343

Abstract: A novel quantum cascade (QC) laser comprises a multiplicity of identical repeat units, with each repeat unit comprising an active region and an injector region. The injector region comprises quantum wells and barriers, selected to facilitate, under appropriate bias, resonant carrier transport from a lower energy level of a given active region to an upper energy level of an adjacent downstream active region. Carrier transition from the energy level to a lower energy level of an active region results in emission of infrared radiation. The laser is advangeously used in, e.g., a measurement system for detection of trace compounds in air.

公开(公告)号：CA2349263C

公开(公告)日：2005-01-11

申请号：CA2349263

申请日：2001-05-29

Applicant: LUCENT TECHNOLOGIES INC

Inventor： GMACHL CLAIRE F ,  CAPASSO FEDERICO ,  PAIELLA ROBERTO ,  SERGENT ARTHUR MIKE ,  TREDICUCCI ALESSANDRO ,  CHO ALFRED YI ,  SIVCO DEBORAH LEE ,  HUTCHINSON ALBERT LEE ,  BAILLARGEON JAMES NELSON ,  HWANG HAROLD YOONSUNG

IPC: H01S5/10 ,  H01S5/12 ,  H01S5/22 ,  H01S5/227 ,  H01S5/34

Abstract: In a mesa geometry semiconductor laser, a patterned dielectric coating used to define the stripe geometry contact on the top the mesa and to provide significant waveguiding comprises a chalcogenide glass. Applications to intersubband (e.g., quantum cascade) lasers are specifically described.

公开(公告)号：DE60007959D1

公开(公告)日：2004-03-04

申请号：DE60007959

申请日：2000-09-04

Applicant: LUCENT TECHNOLOGIES INC

Inventor： CAPASSO FEDERICO ,  CHO ALFRED YI ,  CHU SUNG-NEE GEORGE ,  GMACHL CLAIRE F ,  KOEHLER RUEDEGER ,  SIVCO DEBORAH LEE ,  TREDICUCCI ALESSANDRO

IPC: H01S5/125 ,  H01S5/042 ,  H01S5/10 ,  H01S5/12 ,  H01S5/34 ,  H01S5/30

Abstract: An article comprising a QC-DFB laser is disclosed. In the QC-DFB laser (10), an overlying grating structure achieves relatively strong coupling of the guided mode to the grating, and is thus highly effective in inducing single-mode operation even under cw operating conditions. The grating structure includes grooves (25) etched in a plasmon-enhanced confinement layer (PECL) (22) disposed adjacent and in contact with an upper metallic electrode (23). The grating structure and the PECL (22) are designed such that in the grooves (25), the laser mode travelling in the waveguide can couple efficiently to the surface-plasmon at the electrode interface. This results in strong modulation of the laser mode, leading to strong modulation of, inter alia, the effective refractive index.

公开(公告)号：DE69900427T2

公开(公告)日：2002-06-27

申请号：DE69900427

申请日：1999-05-26

Applicant: LUCENT TECHNOLOGIES INC

Inventor： BAILLARGEON JAMES NELSON ,  CAPASSO FEDERICO ,  CHO ALFRED YI ,  GMACHL CLAIRE F ,  HUTCHINSON ALBERT LEE ,  SIVCO DEBORAH LEE ,  TREDICUCCI ALESSANDRO

IPC: H01S5/00 ,  H01S5/34 ,  H01S5/343

Abstract: A novel quantum cascade (QC) laser comprises a multiplicity of identical repeat units, with each repeat unit comprising an active region and an injector region. The injector region comprises quantum wells and barriers, selected to facilitate, under appropriate bias, resonant carrier transport from a lower energy level of a given active region to an upper energy level of an adjacent downstream active region. Carrier transition from the energy level to a lower energy level of an active region results in emission of infrared radiation. The laser is advangeously used in, e.g., a measurement system for detection of trace compounds in air.

公开(公告)号：CA2342080A1

公开(公告)日：2001-11-08

申请号：CA2342080

申请日：2001-03-27

Applicant: LUCENT TECHNOLOGIES INC

Inventor： BAILLARGEON JAMES NELSON ,  SIVCO DEBORAH LEE ,  CHO ALFRED YI ,  CAPASSO FEDERICO ,  HUTCHINSON ALBERT LEE ,  GMACHL CLAIRE F ,  PAIELLA ROBERTO

IPC: H01S5/343 ,  H01S5/042 ,  H01S5/065 ,  H01S5/22 ,  H01S5/227 ,  H01S5/34 ,  H01S5/30

Abstract: A self mode-locking (SML) mid-infrared (5 and 8 .mu.m) quantum cascade laser is formed that comprises both a relatively thin dielectric insulating layer (i.e., less than one-half micron in thickness) overlaid with an optically highly lossy (i.e., absorbing) layer, with a relatively long (approximately 3.5 mm) optical waveguide. Evidence of mode-locking is obtained from the measured optical spectra and corresponding interferograms, as well as from the rf spectra of the photocurrent detected with a fast quantum-well infrared photodetector. A n estimate for the pulse width of approximately 3 psec is inferred from these data.

公开(公告)号：DE69703595T2

公开(公告)日：2001-04-19

申请号：DE69703595

申请日：1997-03-12

Applicant: LUCENT TECHNOLOGIES INC

Inventor： SIRTORI CARLO ,  SIVCO DEBORAH LEE ,  CAPASSO FEDERICO ,  FAIST JEROME ,  CHO ALFRED YI ,  HUTCHINSON ALBERT LEE

IPC: H01S5/00 ,  H01S5/34

Abstract: The disclosed improved quantum cascade (QC) laser comprises features that facilitate lasing at temperatures above 260K, preferably above 300K. Among the features is a wavefunction-increasing feature that enhances the amplitude of the lasing level wavefunction (3) in the adjacent upstream barrier layer, thereby increasing carrier injection efficiency into the lasing level. Exemplarily, the wavefunction-increasing feature is an approximately disposed thin quantum well (15). Among the features typically is also a chirped superlattice in the injection/relaxation region (12) that acts as a Bragg reflector to suppress escape of carriers from the lasing level into the continuum, while facilitating carrier extraction from the ground (2) state into a miniband, with the energy width of the miniband decreasing over at least a portion of the thickness of the injection/relaxation region. An InP top cladding layer is also used to optimize heat dissipation.

公开(公告)号：DE69800026T2

公开(公告)日：2000-06-29

申请号：DE69800026

申请日：1998-02-17

Applicant: LUCENT TECHNOLOGIES INC

Inventor： CHO ALFRED YI ,  HONG MINGHWEI ,  LOTHIAN JAMES ROBERT ,  MANNAERTS JOSEPH PETRUS ,  REN FAN

IPC: H01L29/78 ,  B82B1/00 ,  H01L21/28 ,  H01L21/336 ,  H01L21/8234 ,  H01L27/088 ,  H01L29/51

Abstract: It has been found that a Ga-oxide-containing layer is substantially not etched in HF solution if the layer is a Ga-Gd-oxide with Gd:Ga atomic ratio of more than about 1:7.5, preferably more than 1:4 or even 1:2. This facilitates removal of a protective dielectric (typically SiO2) layer after an ohmic contact anneal, with the Ga-Gd-oxide gate oxide layer (512) serving as etch stop and not being adversely affected by contact with the HF etchant. Gd-Ge-oxide also exhibits a composition-dependent etch rate in HCl:H2O.

公开(公告)号：DE69800026D1

公开(公告)日：1999-11-18

申请号：DE69800026

申请日：1998-02-17

Applicant: LUCENT TECHNOLOGIES INC

Inventor： CHO ALFRED YI ,  HONG MINGHWEI ,  LOTHIAN JAMES ROBERT ,  MANNAERTS JOSEPH PETRUS ,  REN FAN

IPC: H01L29/78 ,  B82B1/00 ,  H01L21/28 ,  H01L21/336 ,  H01L21/8234 ,  H01L27/088 ,  H01L29/51

Abstract: It has been found that a Ga-oxide-containing layer is substantially not etched in HF solution if the layer is a Ga-Gd-oxide with Gd:Ga atomic ratio of more than about 1:7.5, preferably more than 1:4 or even 1:2. This facilitates removal of a protective dielectric (typically SiO2) layer after an ohmic contact anneal, with the Ga-Gd-oxide gate oxide layer (512) serving as etch stop and not being adversely affected by contact with the HF etchant. Gd-Ge-oxide also exhibits a composition-dependent etch rate in HCl:H2O.

公开(公告)号：DE60114286T2

公开(公告)日：2006-07-13

申请号：DE60114286

申请日：2001-04-30

Applicant: LUCENT TECHNOLOGIES INC

Inventor： BAILLARGEON JAMES NELSON ,  CAPASSO FEDERICO ,  CHO ALFRED YI ,  GMACHL CLAIRE F ,  HUTCHINSON ALBERT LEE ,  PAIELLA ROBERT ,  SIVCO DEBORAH LEE

IPC: H01S5/065 ,  H01S5/343 ,  H01S5/042 ,  H01S5/22 ,  H01S5/227 ,  H01S5/34

Abstract: A self-mode-locking (SML) mid-infrared (5 and 8 mu m) quantum cascade laser is formed that comprises both a relatively thin dielectric insulating layer (18) (i.e., less than one-half micron in thickness) overlaid with an optically highly lossy (i.e., absorbing) layer (20), with a relatively long (approximately 3.5 mm) optical waveguide. Evidence of mode-locking is obtained from the measured optical spectra and corresponding interferograms, as well as from the rf spectra of the photocurrent detected with a fast quantum-well infrared photodetector. An estimate for the pulse width of approximately 3 psec is inferred from these data.

公开(公告)号：DE60114286D1

公开(公告)日：2005-12-01

申请号：DE60114286

申请日：2001-04-30

Applicant: LUCENT TECHNOLOGIES INC

Inventor： BAILLARGEON JAMES NELSON ,  CAPASSO FEDERICO ,  CHO ALFRED YI ,  GMACHL CLAIRE F ,  HUTCHINSON ALBERT LEE ,  PAIELLA ROBERT ,  SIVCO DEBORAH LEE

IPC: H01S5/343 ,  H01S5/042 ,  H01S5/065 ,  H01S5/22 ,  H01S5/227 ,  H01S5/34

Abstract: A self-mode-locking (SML) mid-infrared (5 and 8 mu m) quantum cascade laser is formed that comprises both a relatively thin dielectric insulating layer (18) (i.e., less than one-half micron in thickness) overlaid with an optically highly lossy (i.e., absorbing) layer (20), with a relatively long (approximately 3.5 mm) optical waveguide. Evidence of mode-locking is obtained from the measured optical spectra and corresponding interferograms, as well as from the rf spectra of the photocurrent detected with a fast quantum-well infrared photodetector. An estimate for the pulse width of approximately 3 psec is inferred from these data.