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    P-TYPE III-V NITRIDE SEMICONDUCTOR, AND ITS MANUFACTURE
    23.
    发明专利
    P-TYPE III-V NITRIDE SEMICONDUCTOR, AND ITS MANUFACTURE 失效

    公开(公告)号：JPH11354458A

    公开(公告)日：1999-12-24

    申请号：JP16312098

    申请日：1998-06-11

    Applicant: MATSUSHITA ELECTRONICS CORP

    Inventor： YURI MASAAKI ,  KONDO OSAMU ,  ISHIDA MASAHIRO ,  NAKAMURA SHINJI ,  ORITA KENJI

    IPC: H01L21/205 ,  H01L33/32 ,  H01L33/40 ,  H01L33/00

    Abstract: PROBLEM TO BE SOLVED: To exclude effectively at a comparably low temperature hydrogen from the inside of a III-V semiconductor crystal without performing any heat treatment between its crystal growth and electrode formation, by forming a conductive thin film for adsorbing hydrogen therein on a conductive III-V nitride semiconductor including p-type magnesium which is formed on a substrate. SOLUTION: In a p-type III-V nitride semiconductor, there are formed in succession on a GaN substrate 1 an undoped GaN layer 2, a Mg-added GaN layer 3, and a Pd film 5. That is, in an MOCVD apparatus of an atmospheric pressure, heating the GaN substrate 1 under the atmosphere comprising a mixture gas of NH3 and hydrogen, the surface of the GaN substrate 1 is cleaned and trimethyl gallium is fed thereto to form the undoped GaN layer 2. Then, feeding thereto Cp2 Mg, the Mg-added GaN layer 3 is formed. Next, the GaN substrate 1 is taken into an electron-beam deposition apparatus to form the Pd thin film 5 on the GaN layer 3. Subsequently, the heat treatment of the GaN substrate 1 is performed in an atmosphere of a nitrogen gas.

    METHOD FOR GROWING NITRIDE SYSTEM COMPOUND SEMICONDUCTOR
    24.
    发明专利
    METHOD FOR GROWING NITRIDE SYSTEM COMPOUND SEMICONDUCTOR 失效

    公开(公告)号：JPH11297631A

    公开(公告)日：1999-10-29

    申请号：JP10235598

    申请日：1998-04-14

    Applicant: MATSUSHITA ELECTRONICS CORP

    Inventor： ISHIDA MASAHIRO ,  YURI MASAAKI ,  KONDO OSAMU ,  HASHIMOTO TADAAKI ,  ORITA KENJI

    IPC: H01L21/205 ,  C30B25/02 ,  H01L21/20 ,  H01S5/00 ,  H01S5/323 ,  H01S3/18

    Abstract: PROBLEM TO BE SOLVED: To provide a method for growing a nitride system compound semiconductor on a substrate while suppressing the generation of any defect. SOLUTION: A nitride system compound semiconductor 8 is grown on a substrate 2 constituted of a nitride system compound semiconductor at a growing temperature which is 900 deg.C or more for AlGaN and at a growing temperature which is 700 deg.C or more for InAlGaN. Thus, a method for growing the nitride system compound semiconductor can be obtained without generating any defect between a substrate boundary face and a growing layer. Therefore, a short wavelength emitting element or the like can be manufactured by using a nitride semiconductor grown by this method, and the performance and reliability of the element can be sharply improved.

    MANUFACTURE OF SEMICONDUCTOR LASER DEVICE
    25.
    发明专利
    MANUFACTURE OF SEMICONDUCTOR LASER DEVICE 失效

    公开(公告)号：JPH10190125A

    公开(公告)日：1998-07-21

    申请号：JP34694996

    申请日：1996-12-26

    Applicant: MATSUSHITA ELECTRONICS CORP

    Inventor： HASHIMOTO TADAAKI ,  YURI MASAAKI ,  KONDO OSAMU ,  ISHIDA MASAHIRO

    IPC: H01S5/00 ,  H01S3/18

    Abstract: PROBLEM TO BE SOLVED: To provide a manufacturing method, by which a semiconductor laser device having the short semiconductor laser bars constituting resonators can be manufactured. SOLUTION: After a plurality of semiconductor laser bars 3 are manufactured by respectively forming resonators 2 on substrates 1, a laser bar array 7 is formed by laminating the laser bars 3 upon another in the direction perpendicular to the substrates 1 with a first adhesive. After the array 7 is firmly stuck to an array substrate 9 so that one end faces 2b of the resonators 2 can be faced oppositely to the substrate 9, by using a second adhesive which fuses or melts under such a condition that the first adhesive does not fuse nor melt, the other end faces 2a of the resonators 2 are polished. Then, the array 7 is removed from the substrate 9 by fusing or melting the second adhesive under such a condition that the second adhesive does not fuse nor melt and immediately inverted for polishing the end faces 2b of the resonators 2.

    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
    26.
    发明专利
    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 失效

    公开(公告)号：JPH10163114A

    公开(公告)日：1998-06-19

    申请号：JP31910296

    申请日：1996-11-29

    Applicant: MATSUSHITA ELECTRONICS CORP

    Inventor： YURI MASAAKI ,  UEDA TETSUZO ,  BABA TAKAAKI

    IPC: H01L29/12 ,  H01L21/20 ,  H01L21/203 ,  H01L21/205 ,  H01S5/323

    Abstract: PROBLEM TO BE SOLVED: To homogenize a lead oxide layer and improve the reproducibility, by forming this lead oxide layer on a single crystal substrate, a first GaN crystal within specified temp. range and a second GaN crystal within specified temp. range. SOLUTION: Using a sputtering apparatus, a lead oxide layer 2 is formed on a sapphire-made single crystal substrate 1, and GaN target is sputtered in a substrate temp. range of O to 900 deg.C in an N atmosphere to form a first GaN crystal 4 which is them heated at 900-2000 deg.C in an ammonia atmosphere to form a second GaN crystal 5. Thus it is possible to homogenize the lead oxide layer 5 and form a p-n junction diode at a good reproducibility over the entire surface of the lead oxide layer 2.

    OPTICAL TRANSMISSION MODULE
    27.
    发明专利
    OPTICAL TRANSMISSION MODULE 失效

    公开(公告)号：JPH10126002A

    公开(公告)日：1998-05-15

    申请号：JP28047996

    申请日：1996-10-23

    Applicant: MATSUSHITA ELECTRONICS CORP

    Inventor： NAGAI HIDEO ,  NAKANISHI HIDEYUKI ,  YURI MASAAKI ,  YOSHIKAWA AKIO

    IPC: G02B6/42 ,  H01S5/00 ,  H01S5/026 ,  H01S5/323 ,  H01S3/18

    Abstract: PROBLEM TO BE SOLVED: To simplify the positional relation ship between a light emitting device and a photoreceptor or the like, to attain downsizing, and also simplify assembling, by emitting transmission semiconductor laser light in a direction vertical to the surface of a platform on which the semiconductor laser is mounted. SOLUTION: A reflection mirror 20 utilizing a (111) plane is formed on an Si substrate as a platform 25 for a semiconductor laser 18. Semiconductor laser light 19 is emitted in the direction vertical to the surface of the platform on which the semiconductor laser is mounted. The semiconductor laser 18, a driver 26, a photoreceptor 24, a current-voltage converter 28 and the like are packaged on a plane in a package 30, and the package is sealed at a lens portion where optical fibers 16 and 17 are connected.

    METHOD OF EVALUATING SEMICONDUCTOR DEVICE
    28.
    发明专利
    METHOD OF EVALUATING SEMICONDUCTOR DEVICE 失效

    公开(公告)号：JPH04129242A

    公开(公告)日：1992-04-30

    申请号：JP25066190

    申请日：1990-09-19

    Applicant: MATSUSHITA ELECTRONICS CORP

    Inventor： NOMA JUNJI ,  YURI MASAAKI ,  HIROSE MASANORI ,  OTA KAZUNARI

    IPC: H01L21/66

    Abstract: PURPOSE:To evaluate diffusion-implantation depth with higher accuracy by diffusing or implanting impurities into a semiconductor substrate having quantum well structure and observing the disappearance of a corresponding photoluminescence emission peak by quantum well disordering induced by a diffusion or implantation. CONSTITUTION:A plurality of emission peaks corresponding to each quantum well layer appear because photoluminescence emission wavelengths differ by the layer thickness of each layer on multiple quantum well layers in which a plurality of the quantum well layers 1 in different thickness are formed in a multilayer. When impurities are diffused or implanted to such multiple quantum well layers 1-5, all quantum well layers existing between a section up to a diffusion or implantation front from a substrate surface are disordered, and photoluminescence emission peaks corresponding to the quantum well layers disappear. Accordingly, the disappearance of any peak is conformed, thus determining reaching up to any quantum well layer of the diffusion or implantation front while evaluating the position of the front, the depth of the diffusion or implantation.

    SEMICONDUCTOR LASER
    29.
    发明专利
    SEMICONDUCTOR LASER 失效

    公开(公告)号：JPH0423378A

    公开(公告)日：1992-01-27

    申请号：JP12345290

    申请日：1990-05-14

    Applicant: MATSUSHITA ELECTRONICS CORP

    Inventor： YURI MASAAKI

    IPC: H01S5/00 ,  H01S5/042

    Abstract: PURPOSE:To realize a two-dimensional array structure at the stage of a crystal growth by a method wherein at least two pieces of semiconductor blocks, which respectively consist of an active layer held between first and second clad layers, are connected in order to each other by a high-concentration P-N junction layer on a semiconductor substrate. CONSTITUTION:A first clad layer 11, an active layer 12, a second clad layer 13, a first high-concentration layer 1 (Zn-doped), a second high-concentration layer 2 (Si-doped), a third clad layer 11, an active layer 12, a fourth clad layer 13 and a semiconductor current constricting layer 14 are grown in order on a semiconductor substrate 10 by an MOCVD method. Zn is thermally diffused in two regions only to a depth to reach the layer 13 to form Zn diffused regions 17 and thereafter, ohmic electrodes 15 and 16 are formed and lastly, a cleavage is performed in a resonator length. A P-N junction, which exists on the boundary between two semiconductor blocks and consists of the layers 1 and 2, is biased in the reverse direction to the direction of the P-N junction, but a power loss on the boundary is hardly generated because an impurity is doped to the P-N junction in a high concentration, almost equal light outputs can be obtained from individual luminous regions and a high-output operation is made possible.

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