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公开(公告)号：MY164424A
公开(公告)日：2017-12-15
申请号：MYPI2011700017
申请日：2011-03-03
Applicant: MIMOS BERHAD
Inventor： LEE HING WAH , DANIEL BIEN CHIA SHENG
IPC: G01N27/414 , H01L21/77
Abstract: THE PRESENT INVENTION RELATES TO A SENSOR SYSTEM (10). THE SENSOR SYSTEM COMPRISES AT LEAST TWO CONTACT PADS (11), A READ OUT INTEGRATED CIRCUIT (12), AND A SENSOR DEVICE (13). THE READ OUT INTEGRATED CIRCUIT (12) IS STACKED ON TOP OF THE SENSOR DEVICE (13), AND IT (12) IS CONNECTED TO THE SENSOR DEVICE (13) THROUGH A PLURALITY OF VIAS (16). THE AT LEAST TWO CONTACT PADS (11) ARE CONNECTED TO THE READ OUT INTEGRATED CIRCUIT (12) AND THE SENSOR DEVICE (13) THROUGH A PLURALITY OF VIAS (16) AND METAL LINES (15).
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公开(公告)号：MY168162A
公开(公告)日：2018-10-11
申请号：MYPI20097035
申请日：2009-12-22
Applicant: MIMOS BERHAD
Inventor： DANIEL BIEN CHIA SHENG
Abstract: The present invention provides the method for fabricating nanofluidic channels [23] with a combination of the formation of silicon [22B] or oxide nanowires [22] on a handle substrate [20], layered with or without an insulating material together with wafer planarization techniques. The process provides a simple and practical solution for low cost fabrication of nanofluidic channel with well controlled dimensions where the resolution of the channels is dependent on the resolution of the nanowires instead of on the lithographic tool or type of resist used. This method is compatible with standard CMOS process allowing easy integration on the same platform with other nanofluidic devices and systems fabricated using similar methods. Fig. 1
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公开(公告)号：MY167930A
公开(公告)日：2018-10-04
申请号：MYPI2014701169
申请日：2014-05-07
Applicant: MIMOS BERHAD
Inventor： LEE HING WAH , DANIEL BIEN CHIA SHENG , KHAIRUL ANUAR BIN ABD WAHID , KHAIROM NIZAM BIN ATAN @ MOHAM , ANIFAH BINTI ZAKARIA
IPC: H01L21/027
Abstract: The present invention provides an etch-free method for conductive electrode formation. The method comprises depositing an insulating layer (104) on a substrate (102), spin coating a first polymer layer (106) on the substrate (102), patterning the first polymer layer (106) by photo-lithography and depositing a conductive metal layer by physical deposition to form a top metallic layer (108) and a bottom metallic layer (110).
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公开(公告)号：MY165691A
公开(公告)日：2018-04-20
申请号：MYPI2010700022
申请日：2010-05-06
Applicant: MIMOS BERHAD
Inventor： DANIEL BIEN CHIA SHENG , TEH AUN SHIH , MOHSEN NABIPOOR
Abstract: THE PRESENT INVENTION PROVIDES A DEVICE WITH CARBON NANOTUBES WHEREIN THE NANOTUBES [20] ARE GROWN VERTICALLY ONTO THE SUBSTRATE SURFACE AND IN-BETWEEN THE FINGERS OF AN INTERDIGITAL STRUCTURE. THE COMPLETED ARRAY OF CONDUCTIVE INTERDIGITATED FINGERS WITH A PLURALITY OF THE VERTICAL CARBON NANOTUBES ARE THEN INTEGRATED AS AN INTERDIGITAL DEVICE WHERE THIS DEVICE OPERATES BASED ON THE FRINGING ELECTRIC FIELD EFFECTS. AT LEAST TWO CONDUCTIVE FINGERS [22] SPACED APART ACT AS ELECTRODES OF CAPACITOR. A PLURALITY OF CARBON NANOTUBES [20] IS VERTICALLY FORMED ON TOP OF CONDUCTIVE FINGERS OR BETWEEN CONDUCTIVE FINGERS. CARBON NANOTUBES HAVE PERMITTIVITY WHICH CHANGES ACCORDING TO ENVIRONMENT, HENCE AFFECTING CAPACITANCE MEASURED. DIFFERENT EMBODIMENTS OF DEVICE HAVING THE NANOTUBES PLACED IN TRENCH ARE SHOWN. THE CARBON NANOTUBE INTERDIGITAL DEVICE CAN OPERATE AS A SENSOR FOR APPLICATION IN AREAS OF AGRICULTURE, AQUACULTURE, ENVIRONMENTAL MONITORING AND BIOMEDICAL.
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公开(公告)号：MY164421A
公开(公告)日：2017-12-15
申请号：MYPI2012701094
申请日：2012-12-06
Applicant: MIMOS BERHAD
Inventor： DANIEL BIEN CHIA SHENG , TEH AUN SHIH , LEE WAI YEE , KHAIRUL ANUAR ABD WAHID
Abstract: A METHOD OF PRODUCING VERTICAL NANOWIRES USING SINGLE CATALYST MATERIAL IS PROVIDED, THE METHOD INCLUDES THE STEPS OF DEPOSITING AN INSULATING OXIDE OR NITRIDE LAYER (101) ON A SUBSTRATE (105) SURFACE, DEPOSITING A GOLD CATALYST LAYER (103) ON TOP OF THE INSULATING OXIDE OR NITRIDE LAYER (101), ANNEALING THE SUBSTRATE (105) WITH GOLD CATALYST AT TEMPERATURE ABOVE 350°C, SUCH THAT NANOPARTICLES ARE OF DIAMETER IN RANGE OF 1 TO 100 NM, GROWING ZINC OXIDE NANOWIRES FROM EXPOSED GOLD CATALYST BY CHEMICAL VAPOUR DEPOSITION (CVD) WITH DIETHYLZINC AS A PRECURSOR, AND GROWING SILICON NANOWIRES (107) FROM REMAINING GOLD CATALYST NANOPARTICLES WITH SILICON AS PRECURSOR, SUCH THAT VERTICAL TYPE ZINC OXIDE NANOWIRES ARE PRODUCED AND LATERALLY CONNECTED BY SILICON NANOWIRES (107) WHEREIN THE INSULATING OXIDE OR NITRIDE LAYER (101) IS NOT REQUIRED WHEN THE SUBSTRATE (105) IS INSULATIVE MATERIAL. THE MOST ILLUSTRATIVE DRAWING:
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Patent Agency Ranking
公开(公告)号：MY159287A
公开(公告)日：2016-12-30
申请号：MYPI2010004782
申请日：2010-10-11
Applicant: MIMOS BERHAD
Inventor： DANIEL BIEN CHIA SHENG , LEE HING WAH , MOHD ISMAHADI SYONO , ALI ZAINI ABDULLAH , MOHD ROFEI BIN MAT HUSSIN
Abstract: A MULTILAYER MICROFLUIDIC FILTER (100) FOR FILTERING UNWANTED PARTICLES IN SAMPLE MOLECULES OR FLUID, COMPRISING A SUBSTRATE (110), SUCH AS A SILICON WAFER HAVING A LAYER OF BORON (120) DOPED ON THE UPPERMOST PORTION OF SAID SUBSTRATE (110), A PLURALITY OF FUNNELE-SHAPED PORES (130), EACH RANDOMLY DISPOSED ON THE SUBSTRATE (110) WITH DIFFERENT ARRANGEMENT OF SIZES AND POSITIONS, AN ADHESIVE LAYER (140), SUCH AS AN ADHESION, RESIST, OR WAX COATED ONTO THE SIDEWALL OF EACH OF THE PLURALITY OF PORES (130), AND ADDITIONAL LAYER OF THIN FILM (150) COATED ONTO THE BOTTOM SURFACE OF THE SUBSTRATE (110) TO IMPROVE THE FILTERING CAPABILITY.
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公开(公告)号：MY159117A
公开(公告)日：2016-12-15
申请号：MYPI2011002139
申请日：2011-05-12
Applicant: MIMOS BERHAD
Inventor： DANIEL BIEN CHIA SHENG , SITI AISHAH MOHAMAD BADARUDDIN
Abstract: A METHOD OF FORMING STRUCTURES IN POLYMER FILMS COMPRISING THE STEPS OF PROVIDING A SILICON TEMPLATE WITH A DESIRED STRUCTURE, DEPOSITING A LAYER OF OXIDE ONTO SAID SILICON TEMPLATE, SPIN-COATING A POLYMER-BASED SOLUTION ONTO SAID OXIDE LAYER OF THE SILICON TEMPLATE TO FORM A POLYMER LAYER, CURING SAID POLYMER LAYER TO FORM A POLYMER FILM AND ETCHING SAID OXIDE LAYER TO RELEASE SAID POLYMER FILM FROM SAID SILICON TEMPLATE, WHEREIN THE DEPOSITION OF OXIDE LAYER ONTO SAID SILICON TEMPLATE FORMS A SACRIFICIAL OXIDE LAYER ON SAID SILICON TEMPLATE. THE PRESENT INVENTION FURTHER COMPRISES THE STEP OF SPIN-COATING A POLYMER-BASED SOLUTION ONTO SAID PREVIOUSLY COATED POLYMER LAYER ON THE SILICON TEMPLATE TO FORM A POLYMER FILM WITH MULTIPLE POLYMER LAYERS.
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公开(公告)号：WO2013154417A3
公开(公告)日：2013-10-17
申请号：PCT/MY2013/000075
申请日：2013-04-08
Applicant: MIMOS BERHAD
Abstract: The present invention relates to a method for use in fabrication of silicon dioxide nanowires, which does not require any form metal catalyst or conventional high resolution lithography. The method comprises the steps of providing a silicon based substrate (100); forming, silicon based nanostructures (200) on an insulating material and forming silicon dioxide nanowires by selective oxidation process (300); wherein the silicon based nanostructures (200) are formed on the sidewall of said insulating material; and wherein the selective oxidation process (300) includes the step of thermally oxidizing silicon nanostructures.
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公开(公告)号：WO2013154417A2
公开(公告)日：2013-10-17
申请号：PCT/MY2013000075
申请日：2013-04-08
Applicant: MIMOS BERHAD
IPC: H01L29/06
CPC classification number: C30B29/06 , B82Y40/00 , C30B29/60 , C30B33/005
Abstract: The present invention relates to a method for use in fabrication of silicon dioxide nanowires, which does not require any form metal catalyst or conventional high resolution lithography. The method comprises the steps of providing a silicon based substrate (100); forming, silicon based nanostructures (200) on an insulating material and forming silicon dioxide nanowires by selective oxidation process (300); wherein the silicon based nanostructures (200) are formed on the sidewall of said insulating material; and wherein the selective oxidation process (300) includes the step of thermally oxidizing silicon nanostructures.
Abstract translation: 本发明涉及一种用于制造二氧化硅纳米线的方法，其不需要任何形式的金属催化剂或常规的高分辨率光刻技术。 该方法包括以下步骤：提供硅基衬底（100）; 在绝缘材料上形成硅基纳米结构（200）并通过选择性氧化工艺形成二氧化硅纳米线（300）; 其中所述硅基纳米结构（200）形成在所述绝缘材料的侧壁上; 并且其中所述选择氧化工艺（300）包括热氧化硅纳米结构的步骤。
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公开(公告)号：WO2013089554A1
公开(公告)日：2013-06-20
申请号：PCT/MY2012/000183
申请日：2012-06-29
Applicant: MIMOS BERHAD , SOONG WAI MUN , TEH AUN SHIH , TAN KAI SIN , DANIEL BIEN CHIA SHENG
Inventor： SOONG WAI MUN , TEH AUN SHIH , TAN KAI SIN , DANIEL BIEN CHIA SHENG
IPC: H01L31/12 , H01L31/153 , H01L31/173 , H01L27/15
CPC classification number: H01L31/12 , H01L27/15 , H01L31/153 , H01L31/173
Abstract: The present invention relates to an improvement in light receiving and emitting device, and more particularly to self-sustaining lighting device utilizing solar power. One of the advantages of the light receiving and emitting device of present invention is that a p-n junction solar photovoltaic cell combines with nanowires or nanotubes and hence increases the surface area for light absorption which subsequently improves the overall efficiency of the device. Another advantage of the present invention is that the emitted light from the LED is multi-directional, the light is re-absorbed in the photovoltaic cell layers to further increase the efficiency of the solar cell. The integrated LED can also be used as a photovoltaic cell during the day time to store the solar energy. When needed, the stored energy can be used to drive the LED, e.g. during night time, the energy can be used to power up the LED for illumination or billboard display purposes.
Abstract translation: 本发明涉及光接收和发射装置的改进，更具体地涉及利用太阳能发电的自持式照明装置。 本发明的光接收和发射装置的优点之一是p-n结太阳能光伏电池与纳米线或纳米管结合，因此增加了用于光吸收的表面积，从而提高了器件的整体效率。 本发明的另一个优点是来自LED的发射光是多方向的，光被再吸收在光伏电池层中，以进一步提高太阳能电池的效率。 集成的LED也可以在白天用作光伏电池以存储太阳能。 当需要时，可以使用存储的能量来驱动LED，例如， 在夜间，能量可以用来给LED供电以进行照明或广告牌显示。
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