公开(公告)号：JP2004010990A

公开(公告)日：2004-01-15

申请号：JP2002168063

申请日：2002-06-10

Applicant: SONY CORP

Inventor： SASAKI KOJI ,  NARUI HIRONOBU ,  YANASHIMA KATSUNORI ,  MEMESAWA SATOHIKO

IPC: H05B33/10 ,  C23C14/12 ,  C23C14/24 ,  H01L51/50 ,  H05B33/14

Abstract: PROBLEM TO BE SOLVED: To provide a thin-film forming apparatus which can form an organic thin-film with a uniform thickness on the surface of a substrate. SOLUTION: The thin-film forming apparatus comprises a vacuum chamber 11, a substrate holder 12 installed in the vacuum chamber 11, and a gas feeding means for supplying a gas toward the substrate-mounting surface 12a of the substrate holder 12, wherein the gas feeding means 13 comprises several gas feeding pipes 23, through which the gas of the same content is supplied, and each of the several gas feeding pipes 23 has a means for independently controlling a flow rate of the gas. COPYRIGHT: (C)2004,JPO

公开(公告)号：JP2003303995A

公开(公告)日：2003-10-24

申请号：JP2002109937

申请日：2002-04-12

Applicant: Sony Corp ,  ソニー株式会社

Inventor： YANASHIMA KATSUNORI

IPC: H01L21/205 ,  H01L33/06 ,  H01L33/12 ,  H01L33/32 ,  H01S5/323 ,  H01L33/00

Abstract: PROBLEM TO BE SOLVED: To provide a nitride semiconductor element, equipped with a high AL composition nitride semiconductor layer, that is a nitride semiconductor element equipped with a high AL composition nitride semiconductor layer, which is 5 atom % or higher, capable of emitting lights with wavelengths in the ultraviolet region. SOLUTION: This ultraviolet-emitting diode 10 is provided with the laminate structure of an Si-doped n-Al 0.25 GaN layer 14 whose film thickness is 1 μm, an Si-doped n-AlGaInN active layer 16 whose film thickness is 50 nm, 5 cyclic superlattice layer 18 constituted of an Al 0.25 GaN layer, whose film thickness is 3 nm/Mg-doped p-GaN layer whose film thickness is 3 nm and an Mg-doped p-GaN layer 20, whose film thickness is 0.1 μm. In the AlN laminate sapphire substrate 12, an AlN layer 12b, whose film thickness is 1 μm, is laminated directly or via a low-temperature growth buffer layer (not shown) on a C face of a sapphire substrate 12a. COPYRIGHT: (C)2004,JPO

Abstract translation: 要解决的问题：为了提供一种装备有高AL组成氮化物半导体层的氮化物半导体元件，其是配备有高于5原子％以上的高AL组成氮化物半导体层的氮化物半导体元件，其能够 发射具有紫外线区域波长的光。

解决方案：该紫外发光二极管10设置有膜厚度为1μm的Si掺杂n-Al 0.25 GaN层14的层叠结构，Si掺杂的n-AlGaInN 膜厚度为50nm的有源层16，膜厚为3nm /厚度为3nm的掺杂Mg的p-GaN层的由Al 0.25 GaN层构成的5个环状超晶格层18 以及Mg厚度为0.1μm的Mg掺杂p-GaN层20。 在AlN层叠蓝宝石基板12中，膜厚1μm的AlN层12b直接或经由蓝宝石基板12a的C面上的低温生长缓冲层（未图示）层叠。 版权所有（C）2004，JPO

公开(公告)号：JP2003059835A

公开(公告)日：2003-02-28

申请号：JP2001245134

申请日：2001-08-13

Applicant: Sony Corp ,  ソニー株式会社

Inventor： YANASHIMA KATSUNORI ,  NAKAJIMA HIROSHI

IPC: H01L21/86 ,  C30B25/02 ,  C30B29/40 ,  H01L21/205

CPC classification number: C30B29/40 ,  C30B25/02 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/0262 ,  H01L21/02661

Abstract: PROBLEM TO BE SOLVED: To provide a method for growing a nitride semiconductor, capable of growing nitride semiconductor of proper crystal state on a crystalline nitride semiconductor substrate.
SOLUTION: The method for growing the nitride semiconductor on the crystalline nitride semiconductor substrate comprises the steps of raising the temperature of the substrate, by starting a supply of a material gas to a surface of the substrate before the substrate exceeds 1,200°C to thereby start growing of the nitride semiconductor on the substrate. In this case, growing of the nitride semiconductor on the substrate is started, after the substrate reaches at 300°C. Furthermore, the supply of other material gas, except nitrogen source gas, is started after the supply of the nitrogen material gas is started before the substrate exceeds 1,200°C, so that growing of the nitride semiconductor on the substrate is started.
COPYRIGHT: (C)2003,JPO

Abstract translation: 要解决的问题：提供一种用于生长氮化物半导体的方法，其能够在结晶氮化物半导体衬底上生长具有适当晶体状态的氮化物半导体。 解决方案：用于在结晶氮化物半导体衬底上生长氮化物半导体的方法包括以下步骤：通过在衬底超过1200℃之前开始向衬底的表面供应原料气体，从而提高衬底的温度 开始在衬底上生长氮化物半导体。 在这种情况下，在基板达到300℃之后，开始在基板上生长氮化物半导体。 另外，氮源气体以外的其它原料气体的供给是在基板超过1200℃开始供给氮气体之后开始的，从而开始在基板上生长氮化物半导体。

公开(公告)号：JP2002363000A

公开(公告)日：2002-12-18

申请号：JP2001170475

申请日：2001-06-06

Applicant: SONY CORP

Inventor： YANASHIMA KATSUNORI ,  NAKAJIMA HIROSHI

IPC: C30B29/38 ,  H01L21/205 ,  H01L31/0248 ,  H01L33/12 ,  H01L33/32 ,  H01L33/00

Abstract: PROBLEM TO BE SOLVED: To provide a method for growing a nitride semiconductor, by which the nitride semiconductor having a good crystal state can be grown on a crystalline nitride semiconductor substrate. SOLUTION: The method of growing a crystal of the nitride semiconductor on the crystalline nitride semiconductor substrate comprises supply of gaseous raw materials onto the substrate while keeping the temperature of the substrate within the temperature range of 400 to 600 deg.C so as to form a low temperature buffer layer composed of the nitride semiconductor material on the surface of the substrate. Thereafter, supplying the gaseous raw materials onto the substrate while keeping the temperature of the substrate at a predetermined temperature higher than 600 deg.C so as to grow the nitride semiconductor on the low temperature buffer layer formed on the substrate.

公开(公告)号：JP2002289539A

公开(公告)日：2002-10-04

申请号：JP2001090893

申请日：2001-03-27

Applicant: SONY CORP

Inventor： KOBAYASHI TOSHIMASA ,  YANASHIMA KATSUNORI ,  YAMAGUCHI KYOJI ,  NAKAJIMA HIROSHI

IPC: H01L33/16 ,  H01L21/20 ,  H01L21/205 ,  H01L31/10 ,  H01L31/18 ,  H01L33/02 ,  H01L33/14 ,  H01L33/32 ,  H01S5/02 ,  H01S5/026 ,  H01S5/22 ,  H01S5/323 ,  H01S5/343 ,  H01L33/00

Abstract: PROBLEM TO BE SOLVED: To provide a highly reliable nitride semiconductor element arranged to have a high degree of freedom in the design and fabrication of the element. SOLUTION: Essential part of the nitride semiconductor element is formed on a sapphire substrate 10 and comprises a protrusion-like nuclide crystal layer 11 having an insulation layer 12 on one side face, and a GaN layer 15 grown on the substrate and the nuclide crystal layer by lateral growth method. Since the GaN layer is grown by lateral growth method only from the exposed side face not covered with the insulation layer of the nuclide crystal layer, the GaN layer is grown asymmetrically in the lateral direction, and an association part 32 is formed in the thickness direction of the GaN layer from the vicinity of boundary of the nuclide crystal layer and the insulation layer. Although the association part exists in the center of the nuclide crystal layers in the conventional structure, it exists in the vicinity of boundary between the nuclide crystal layer and the insulation layer in this example. Since the WL of low defect density region is represented by a relation WP≈WO+WL, and WL>WO assuming the pitch of the nuclide crystal layer is WP and the width thereof is WO, and thereby it is represented by a relation WL>0.5×WP; a significantly larger value of WL can be obtained as compared with a conventional structure.

公开(公告)号：JP2002185084A

公开(公告)日：2002-06-28

申请号：JP2000383027

申请日：2000-12-18

Applicant: SONY CORP

Inventor： TAMAMURA KOJI ,  YANASHIMA KATSUNORI ,  NAKAJIMA HIROSHI ,  TOMITANI SHIGETAKA

IPC: H01S5/323 ,  H01S5/343

Abstract: PROBLEM TO BE SOLVED: To improve the light emitting characteristic of a semiconductor light- emitting device having a mesa structure by reducing the threshold current of the device, by forming current constricting areas so as to make a current to efficiently flow to an active layer formed in the device, without increasing the number of epitaxial layer forming processes. SOLUTION: In the semiconductor light-emitting device, at least a first- conductivity first clad layer 12, the active layer 13, a second-conductivity second clad layer 14, and a cap layer 15 with which one electrode is brought into ohmic-contact are formed on a substrate 11, and the current constricting areas 21 and 22 which feed currents to the operating area of the active layer 13 are formed in at least one of the first and second clad layers 12 and 14. The current constricting areas 21 and 22 are composed of opposite-conductivity layers or carrier inactivating layers formed by inactivating one-conductivity layers, having carriers which are formed by once activating a dopant.

公开(公告)号：JP2001196699A

公开(公告)日：2001-07-19

申请号：JP2000010057

申请日：2000-01-13

Applicant: SONY CORP

Inventor： TAKEYA MOTONOBU ,  YANASHIMA KATSUNORI ,  IKEDA MASAO ,  ASANO TAKEHARU ,  IKEDA MASAAKI ,  HINO TOMOKIMI ,  SHIBUYA KATSUYOSHI

IPC: H01L21/20 ,  H01L33/06 ,  H01L33/32 ,  H01S5/323 ,  H01L33/00

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor element with a III-V family nitride semiconductor layer of superb crystallizability while preventing warp of a substrate. SOLUTION: A III-V family nitride semiconductor layer 20 as thick as 8 μm or less is provided on a substrate 11 made of sapphire, thus reducing the warp of the substrate 11 due to the difference in the thermal coefficient of expansion and the lattice constant between the substrate 11 and the III-V family nitride semiconductor layer 20. An n-side contact layer 23 composing the III-V family nitride semiconductor layer 20 partially has a lateral growth region that is grown in a lateral direction from a crystal 22A of a seed crystal layer 22. The lateral growth region has low dislocation density and hence crystallizability at a part corresponding to the lateral growth region of each layer being formed on the n-side contact layer 23 is high.

公开(公告)号：JP2000349397A

公开(公告)日：2000-12-15

申请号：JP15761699

申请日：1999-06-04

Applicant: SONY CORP

Inventor： HASHIMOTO SHIGEKI ,  YANASHIMA KATSUNORI ,  IKEDA MASAO ,  NAKAJIMA HIROSHI

IPC: H01L33/06 ,  H01L33/32 ,  H01S5/00 ,  H01S5/20 ,  H01S5/32 ,  H01S5/323 ,  H01S5/343 ,  H01L33/00

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element using such a III-V nitride compound semiconductor that can reduce the threshold current density by hardly raising the operating voltage. SOLUTION: The p-type clad layer of a GaN semiconductor laser is constituted of two or more semiconductor layers having different band gaps and, in addition, the part of the p-type clad layer near the active layer-side interface of the layer is constituted of a semiconductor layer having a larger band gap than the other part has. To be concrete, in the GaN semiconductor laser having an AlGaN/GaN/GaInN SCH structure, the p-type AlGaN clad layer 10 is constituted of a p-type Alx1Ga1-x1N layer 10a which is in contact with a p-type GaN optical waveguide layer 9 and a p-type Alx2Ga1-x2N layer 10b (0

公开(公告)号：JPH10326911A

公开(公告)日：1998-12-08

申请号：JP13540697

申请日：1997-05-26

Applicant: SONY CORP

Inventor： ASAZUMA YASUNORI ,  YANASHIMA KATSUNORI ,  MIYAJIMA TAKAO

IPC: H01L21/203 ,  H01L21/205 ,  H01L29/205 ,  H01L29/207 ,  H01L33/32 ,  H01S5/00 ,  H01S5/323 ,  H01L33/00 ,  H01S3/18

Abstract: PROBLEM TO BE SOLVED: To improve crystalline property and electrical conductivity and to uniformize a composition ratio in the growing surface of crystal and p-type impurity concentration. SOLUTION: Plural 1st layers 11, each of which consists of AlGaN mixed crystal and has about 1 to 100 nm thickness and plural 2nd layers 12 each of which is Mg-added p-type GaN and has about 1 to 100 nm thickness, are laminated alternately. Since respective layers 11, 12 are thin, the laminated layers as a whole have properties of a p-type AlGaN mixed crystal, even when Mg is not included in the 1st layers 11 and Al is not included in the 2nd layers 12. Since an Al material and a Mg material are supplied so as to be timewisely separated, reaction between the Al material and the Mg material which interfere with the growth of fine crystal can be prevented. Thereby fine crystals can be allowed to grow.

公开(公告)号：JPH10112438A

公开(公告)日：1998-04-28

申请号：JP26462696

申请日：1996-10-04

Applicant: SONY CORP

Inventor： YANASHIMA KATSUNORI ,  HASHIMOTO SHIGEKI ,  ASAZUMA YASUNORI ,  IKEDA MASAO

IPC: H01L21/205 ,  H01S5/00 ,  H01S5/323 ,  H01S3/18

Abstract: PROBLEM TO BE SOLVED: To provide a method for growing a p-type nitride III-V compound semiconductor which has less crystal defects and good quality. SOLUTION: A MOCVD device 10 for implementing this method has a reaction tube 14 having inside thereof a suscepter 12 holding a substrate W, and a bubbler 20A housing TMG(trimethylgallium) and adapted for supplying a TMG gas to the reaction tube 14 through a supply line 18 by bubbling with a hydrogen gas. The substrate W is set in the reaction tube 14, and the temperature is raised to 1000 deg.C. Then, a hydrogen gas is supplied to the bubbler 20A, thereby introducing the TMG gas into the reaction tube 14. A GaN:C crystal to which a carbon atom as a p-type dopant is introduced is epitaxially grown on the substrate W. As a result, a GaN:C crystal of good quality having less crystal defects is provided.