Method for manufacturing an interposer, interposer and chip package structure
    21.
    发明授权
    Method for manufacturing an interposer, interposer and chip package structure 有权
    用于制造插入件,插入件和芯片封装结构的方法

    公开(公告)号:US09368442B1

    公开(公告)日:2016-06-14

    申请号:US14583755

    申请日:2014-12-28

    Abstract: A method for manufacturing an interposer includes the following steps. Conductive beads is filled in a blind via of a substrate and a solder layer of each conductive bead is melted so as to form a solder post in the blind via. A metal ball of each conductive bead is inlaid in the corresponding solder post such that the solder post and the metal balls inlaid therein construct a conductive though via. Two surfaces of the substrate are planarized such that two ends of the conductive through via are exposed to the two surfaces of the substrate respectively and are flush with the two surfaces of the substrate respectively. A redistribution layer is manufactured at each surface of the substrate such that the two ends of each conductive through via connect the redistribution layers respectively. Besides, an interposer and a chip package structure applied the interposer are also provided.

    Abstract translation: 一种用于制造插入件的方法包括以下步骤。 导电珠填充在基板的盲孔中,并且每个导电珠的焊料层熔化,以在盲孔中形成焊料柱。 每个导电珠的金属球镶嵌在相应的焊料柱中,使得焊接柱和镶嵌在其中的金属球构成导电的通孔。 基板的两个表面被平坦化,使得导电通孔的两个端部分别暴露于基板的两个表面,并分别与基板的两个表面齐平。 在衬底的每个表面处制造再分布层,使得每个导电通孔的两端分别连接重新分布层。 此外,还提供了应用了插入器的插入器和芯片封装结构。

    Light-emitting diode package and manufacturing method thereof

    公开(公告)号:US11251350B2

    公开(公告)日:2022-02-15

    申请号:US16281108

    申请日:2019-02-21

    Abstract: A light-emitting diode package including a carrier structure, a patterned conductive layer, at least one chip, a dielectric layer, at least one first conductive via, a build-up circuit structure, and at least one light-emitting diode is provided. The patterned conductive layer is disposed on the carrier structure. The chip is disposed on the carrier structure. The dielectric layer is disposed on the carrier structure and encapsulates the chip and the patterned conductive layer. The first conductive via penetrates the dielectric layer and is electrically connected to the patterned conductive layer. The build-up circuit structure is disposed on the dielectric layer and electrically connected to the first conductive via. The light-emitting diode is disposed on the build-up circuit structure.

    MANUFACTURING METHOD OF PACKAGE CARRIER

    公开(公告)号:US20210398894A1

    公开(公告)日:2021-12-23

    申请号:US17402635

    申请日:2021-08-16

    Abstract: A package carrier includes a substrate, at least one interposer disposed in at least one opening of the substrate, a conductive structure layer, a first build-up structure, and a second build-up structure. The interposer includes a glass substrate, at least one conductive via, at least one first pad, and at least one second pad. The conductive via passes through the glass substrate, and the first and the second pads are disposed respectively on an upper surface and a lower surface of the glass substrate opposite to each other and are connected to opposite ends of the conductive via. The conductive structure layer is disposed on the substrate and is structurally and electrically connected to the first and the second pads. The first and the second build-up structures are disposed respectively on the first and the second surfaces of the substrate and are electrically connected to the conductive structure layer.

    Manufacturing method of substrate structure

    公开(公告)号:US10950687B2

    公开(公告)日:2021-03-16

    申请号:US16874691

    申请日:2020-05-15

    Abstract: A manufacturing method of a substrate structure includes the following steps. A first build-up circuit structure is formed. At least one copper pillar is formed on the first build-up circuit structure. A dielectric layer is formed on the first build-up circuit structure, and the dielectric layer wraps the copper pillar. A second build-up circuit structure and a capacitive element are formed on the dielectric layer. In particular, the second build-up circuit structure and the first build-up circuit structure are respectively located at two opposite sides of the dielectric layer. The capacitive element is disposed in a capacitive element setting region within the second build-up circuit structure. The copper pillar penetrates the dielectric layer and is electrically connected to the second build-up circuit structure and the first build-up circuit structure.

    MANUFACTURING METHOD OF SUBSTRATE STRUCTURE
    28.
    发明申请

    公开(公告)号:US20200273948A1

    公开(公告)日:2020-08-27

    申请号:US16874691

    申请日:2020-05-15

    Abstract: A manufacturing method of a substrate structure includes the following steps. A first build-up circuit structure is formed. At least one copper pillar is formed on the first build-up circuit structure. A dielectric layer is formed on the first build-up circuit structure, and the dielectric layer wraps the copper pillar. A second build-up circuit structure and a capacitive element are formed on the dielectric layer. In particular, the second build-up circuit structure and the first build-up circuit structure are respectively located at two opposite sides of the dielectric layer. The capacitive element is disposed in a capacitive element setting region within the second build-up circuit structure. The copper pillar penetrates the dielectric layer and is electrically connected to the second build-up circuit structure and the first build-up circuit structure.

    Substrate structure and manufacturing method thereof

    公开(公告)号:US10700161B2

    公开(公告)日:2020-06-30

    申请号:US16159726

    申请日:2018-10-15

    Abstract: A manufacturing method of a substrate structure includes the following steps. A first build-up circuit structure is formed. At least one copper pillar is formed on the first build-up circuit structure. A dielectric layer is formed on the first build-up circuit structure, and the dielectric layer wraps the copper pillar. A second build-up circuit structure and a capacitive element are formed on the dielectric layer. In particular, the second build-up circuit structure and the first build-up circuit structure are respectively located at two opposite sides of the dielectric layer. The capacitive element is disposed in a capacitive element setting region within the second build-up circuit structure. The copper pillar penetrates the dielectric layer and is electrically connected to the second build-up circuit structure and the first build-up circuit structure. A substrate structure obtained by the manufacturing method of the substrate structure is provided.

    Package structure with structure reinforcing element and manufacturing method thereof

    公开(公告)号:US10685922B2

    公开(公告)日:2020-06-16

    申请号:US16240806

    申请日:2019-01-07

    Abstract: A package structure includes a redistribution structure, a chip, one or more structural reinforcing elements, and a protective layer. The redistribution structure includes a first circuit layer and a second circuit layer disposed over the first circuit layer. The first circuit layer is electrically connected to the second circuit layer. The chip is disposed over the redistribution structure and electrically connected to the second circuit layer. The one or more structural reinforcing elements are disposed over the redistribution structure. The structural reinforcing element has a Young's modulus in a range of of 30 to 200 GPa. The protective layer overlays the chip and a sidewall of the structural reinforcing element.

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