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    Method for manufacturing MEMS torsional electrostatic actuator
    21.
    发明授权
    Method for manufacturing MEMS torsional electrostatic actuator 有权

    公开(公告)号：US09834437B2

    公开(公告)日：2017-12-05

    申请号：US15327230

    申请日：2015-07-31

    Applicant: CSMC TECHNOLOGIES FAB1 CO., LTD.

    Inventor： Errong Jing

    IPC: B81C1/00 ,  B81B3/00

    CPC classification number: B81C1/00182 ,  B81B3/0021 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81B2203/04 ,  B81B2203/058 ,  B81C1/00603 ,  B81C2201/0109 ,  B81C2201/0111

    Abstract: A method for manufacturing an MEMS torsional electrostatic actuator comprises: providing a substrate, wherein the substrate comprises a first silicon layer, a buried oxide layer and a second silicon layer that are laminated sequentially; patterning the first silicon layer and exposing the buried oxide layer to form a rectangular upper electrode plate separated from a peripheral region, wherein the upper electrode plate and the peripheral region are connected by only using a cantilever beam, and forming, on the peripheral region, a recessed portion exposing the buried oxide layer; patterning the second silicon layer and exposing the buried oxide layer to form a back cavity, wherein the back cavity is located in a region of the second silicon layer corresponding to the upper electrode plate, covers 40% to 60% of the area of the region corresponding to the upper electrode plate, and is close to one end of the cantilever beam; exposing the second silicon layer, and suspending the upper electrode plate and the cantilever beam; and respectively forming an upper contact electrode and a lower contact electrode on the second silicon layer.

    METHOD FOR MANUFACTURING MEMS TORSIONAL ELECTROSTATIC ACTUATOR
    22.
    发明申请
    METHOD FOR MANUFACTURING MEMS TORSIONAL ELECTROSTATIC ACTUATOR 有权

    公开(公告)号：US20170174508A1

    公开(公告)日：2017-06-22

    申请号：US15327230

    申请日：2015-07-31

    Applicant: CSMC TECHNOLOGIES FAB1 CO., LTD.

    Inventor： Errong JING

    IPC: B81C1/00 ,  B81B3/00

    CPC classification number: B81C1/00182 ,  B81B3/0021 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81B2203/04 ,  B81B2203/058 ,  B81C1/00603 ,  B81C2201/0109 ,  B81C2201/0111

    Abstract: A method for manufacturing an MEMS torsional electrostatic actuator comprises: providing a substrate, wherein the substrate comprises a first silicon layer, a buried oxide layer and a second silicon layer that are laminated sequentially; patterning the first silicon layer and exposing the buried oxide layer to form a rectangular upper electrode plate separated from a peripheral region, wherein the upper electrode plate and the peripheral region are connected by only using a cantilever beam, and forming, on the peripheral region, a recessed portion exposing the buried oxide layer; patterning the second silicon layer and exposing the buried oxide layer to form a back cavity, wherein the back cavity is located in a region of the second silicon layer corresponding to the upper electrode plate, covers 40% to 60% of the area of the region corresponding to the upper electrode plate, and is close to one end of the cantilever beam; exposing the second silicon layer, and suspending the upper electrode plate and the cantilever beam; and respectively forming an upper contact electrode and a lower contact electrode on the second silicon layer.

    METHOD OF CREATING MEMS DEVICE CAVITIES BY A NON-ETCHING PROCESS
    24.
    发明申请
    METHOD OF CREATING MEMS DEVICE CAVITIES BY A NON-ETCHING PROCESS 失效
    通过非蚀刻过程创建MEMS器件CAVI的方法

    公开(公告)号：US20100271688A1

    公开(公告)日：2010-10-28

    申请号：US12831898

    申请日：2010-07-07

    Applicant: Chun-Ming Wang ,  Jeffrey Lan ,  Teruo Sasagawa

    Inventor： Chun-Ming Wang ,  Jeffrey Lan ,  Teruo Sasagawa

    IPC: G02F1/19

    CPC classification number: B81C1/00047 ,  B81B2201/047 ,  B81C2201/0108 ,  B81C2201/0111 ,  G02B26/001

    Abstract: MEMS devices (such as interferometric modulators) may be fabricated using a sacrificial layer that contains a heat vaporizable polymer to form a gap between a moveable layer and a substrate. One embodiment provides a method of making a MEMS device that includes depositing a polymer layer over a substrate, forming an electrically conductive layer over the polymer layer, and vaporizing at least a portion of the polymer layer to form a cavity between the substrate and the electrically conductive layer. Another embodiment provides a method for making an interferometric modulator that includes providing a substrate, depositing a first electrically conductive material over at least a portion of the substrate, depositing a sacrificial material over at least a portion of the first electrically conductive material, depositing an insulator over the substrate and adjacent to the sacrificial material to form a support structure, and depositing a second electrically conductive material over at least a portion of the sacrificial material, the sacrificial material being removable by heat-vaporization to thereby form a cavity between the first electrically conductive layer and the second electrically conductive layer.

    Abstract translation: 可以使用包含热可汽化聚合物以在可移动层和基底之间形成间隙的牺牲层来制造MEMS器件（例如干涉式调制器）。 一个实施例提供了一种制造MEMS器件的方法，该MEMS器件包括在衬底上沉积聚合物层，在聚合物层上形成导电层，并蒸发聚合物层的至少一部分以在衬底和电 导电层。 另一个实施例提供了制造干涉式调制器的方法，该方法包括提供衬底，在衬底的至少一部分上沉积第一导电材料，在第一导电材料的至少一部分上沉积牺牲材料，沉积绝缘体 在所述衬底上并且邻近所述牺牲材料以形成支撑结构，以及在所述牺牲材料的至少一部分上沉积第二导电材料，所述牺牲材料可通过热蒸发而被去除，从而在所述第一电 导电层和第二导电层。

    MEMS扭转式静电驱动器的制作方法
    27.
    发明申请
    MEMS扭转式静电驱动器的制作方法 审中-公开

    公开(公告)号：WO2016086682A1

    公开(公告)日：2016-06-09

    申请号：PCT/CN2015/085765

    申请日：2015-07-31

    Applicant: 无锡华润上华半导体有限公司

    Inventor： 荆二荣

    IPC: B81C1/00

    CPC classification number: B81C1/00182 ,  B81B3/0021 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81B2203/04 ,  B81B2203/058 ,  B81C1/00603 ,  B81C2201/0109 ,  B81C2201/0111

    Abstract: 一种MEMS扭转式静电驱动器的制作方法，包括：提供基片（10），基片（10）包括依次层叠的第一硅层（100）、埋氧化层（200）和第二硅层（300）；将第一硅层（100）图形化并暴露埋氧化层（200）以形成与周边区域（140）相互间隔的矩形的上极板（120），上极板（120）与周边区域（140）仅通过悬臂梁（130）连接，同时还在周边区域（140）上形成暴露埋氧化层（200）的凹部（110）；将第二硅层（300）图形化并暴露埋氧化层（200）以形成背腔（310），背腔（310）位于第二硅层（300）上与上极板（120）对应的区域，并覆盖与上极板（120）对应区域40％～60％的面积，背腔（310）靠近悬臂梁（130）的一端；暴露第二硅层（300），悬空上极板（120）和悬臂梁（130）；及在第二硅层（300）上分别形成上接触电极（400）和下接触电极（500）。

    METHOD OF CREATING MEMS DEVICE CAVITIES BY A NON-ETCHING PROCESS
    28.
    发明申请
    METHOD OF CREATING MEMS DEVICE CAVITIES BY A NON-ETCHING PROCESS 审中-公开
    通过非蚀刻过程创建MEMS器件CAVI的方法

    公开(公告)号：WO2007078495A2

    公开(公告)日：2007-07-12

    申请号：PCT/US2006/045925

    申请日：2006-11-30

    Applicant: QUALCOMM INCORPORATED ,  WANG, Chun-Ming ,  LAN, Jeffrey ,  SASAGAWA, Teruo

    Inventor： WANG, Chun-Ming ,  LAN, Jeffrey ,  SASAGAWA, Teruo

    IPC: B81B3/00 ,  G02B26/08 ,  G02B26/00

    CPC classification number: B81C1/00047 ,  B81B2201/047 ,  B81C2201/0108 ,  B81C2201/0111 ,  G02B26/001

    Abstract: MEMS devices (such as interferometric modulators) may be fabricated using a sacrificial layer that contains a heat vaporizable polymer to form a gap between a moveable layer and a substrate. One embodiment provides a method of making a MEMS device that includes depositing a polymer layer over a substrate, forming an electrically conductive layer over the polymer layer, and vaporizing at least a portion of the polymer layer to form a cavity between the substrate and the electrically conductive layer. Another embodiment provides a method for making an interferometric modulator that includes providing a substrate, depositing a first electrically conductive material over at least a portion of the substrate, depositing a sacrificial material over at least a portion of the first electrically conductive material, depositing an insulator over the substrate and adjacent to the sacrificial material to form a support structure, and depositing a second electrically conductive material over at least a portion of the sacrificial material, the sacrificial material being removable by heat-vaporization to thereby form a cavity between the first electrically conductive layer and the second electrically conductive layer.

    Abstract translation: 可以使用包含热可汽化聚合物以在可移动层和基底之间形成间隙的牺牲层来制造MEMS器件（例如干涉式调制器）。 一个实施例提供了一种制造MEMS器件的方法，该MEMS器件包括在衬底上沉积聚合物层，在聚合物层上形成导电层，并蒸发聚合物层的至少一部分以在衬底和电 导电层。 另一个实施例提供了制造干涉式调制器的方法，该方法包括提供衬底，在衬底的至少一部分上沉积第一导电材料，在第一导电材料的至少一部分上沉积牺牲材料，沉积绝缘体 在所述衬底上并且邻近所述牺牲材料以形成支撑结构，以及在所述牺牲材料的至少一部分上沉积第二导电材料，所述牺牲材料可通过热蒸发而被去除，从而在所述第一电 导电层和第二导电层。

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