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公开(公告)号：US07153440B2
公开(公告)日：2006-12-26
申请号：US10242213
申请日：2002-09-12
Applicant: Bevan Staple , Jillian Buriak
Inventor： Bevan Staple , Jillian Buriak
IPC: C23F1/00
CPC classification number: B82Y30/00 , B81C1/00476 , B81C1/00801 , B81C2201/0114 , B81C2201/0133 , B81C2201/0139 , B81C2201/053
Abstract: A microelectromechanical structure is formed by depositing sacrificial and structural material over a substrate to form a structural layer on a component electrically attached with the substrate. The galvanic potential of the structural layer is greater than the galvanic potential of the component. At least a portion of the structural material is covered with a protective material that has a galvanic potential less than or equal to the galvanic potential of the component. The sacrificial material is removed with a release solution. At least one of the protective material and release solution is surfactanated, the surfactant functionalizing a surface of the component.
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公开(公告)号：US06399177B1
公开(公告)日：2002-06-04
申请号：US09580105
申请日：2000-05-30
Applicant: Stephen J. Fonash , Ali Kaan Kalkan , Sanghoon Bae
Inventor： Stephen J. Fonash , Ali Kaan Kalkan , Sanghoon Bae
IPC: B32B700
CPC classification number: B81C1/0038 , B81C1/00047 , B81C2201/0115 , B81C2201/0139 , B81C2201/018 , C23C16/24 , C23C16/511 , G01N21/17 , G01N27/121 , G01N27/44717 , G01N30/6095 , H01J49/0418 , Y10T428/24174 , Y10T428/249953
Abstract: A novel porous film is disclosed comprising a network of silicon columns in a continuous void which may be fabricated using high density plasma deposition at low temperatures, i.e., less than about 250° C. This silicon film is a two-dimensional nano-sized array of rodlike columns. This void-column morphology can be controlled with deposition conditions and the porosity can be varied up to 90%. The simultaneous use of low temperature deposition and etching in the plasma approach utilized, allows for the unique opportunity of obtaining columnar structure, a continuous void, and polycrystalline column composition at the same time. Unique devices may be fabricated using this porous continuous film by plasma deposition of this film on a glass, metal foil, insulator or plastic substrates.
Abstract translation: 公开了一种新颖的多孔膜，其包括在连续空隙中的硅柱网络，其可以在低温下（即小于约250℃）下使用高密度等离子体沉积来制造。该硅膜是二维纳米尺寸阵列 的棒状柱。 这种空隙柱形态可以用沉积条件控制，并且孔隙率可以变化高达90％。 在所采用的等离子体方法中同时使用低温沉积和蚀刻允许在同时获得柱状结构，连续空隙和多晶柱组成的独特机会。 可以使用这种多孔连续膜通过将该膜等离子体沉积在玻璃，金属箔，绝缘体或塑料基底上来制造独特的器件。
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23.发明专利
公开(公告)号：JP2004524983A
公开(公告)日：2004-08-19
申请号：JP2002579360
申请日：2002-02-21
Inventor： ベンツェル フーベルト , シェーファー フランク , ヴェーバー ヘリベルト
CPC classification number: B81C1/00047 , B81B2201/0278 , B81C2201/0115 , B81C2201/0139
Abstract: 本発明は、特に半導体基板、特にシリコンからなる半導体基板（１０１）およびセンサー領域（４０４）を有する半導体部品（１００、・・・、７００）、特に多層半導体部品、有利にマイクロメカニック部品、特に熱伝導センサーの製造方法に関する。
半導体基板（１０１）およびセンサー領域（４０４）の断熱を廉価に生じるために、本発明により、半導体部品（１００、・・・、７００）内に多孔質層（１０４、５０１）が設けられている。-
公开(公告)号：JP5317826B2
公开(公告)日：2013-10-16
申请号：JP2009121006
申请日：2009-05-19
Applicant: キヤノン株式会社
Inventor： 建六 張
CPC classification number: B06B1/0292 , B81B2201/0271 , B81B2203/0127 , B81C1/00476 , B81C2201/0139
Abstract: A capacitive electromechanical transducer includes a substrate, a cavity formed by a vibrating membrane held above the substrate with a certain distance between the vibrating membrane and the substrate by supporting portions arranged on the substrate, a first electrode whose surface is exposed to the cavity, and a second electrode whose surface facing the cavity is covered with an insulating film, wherein the first electrode is provided on a surface of the substrate or a lower surface of the vibrating membrane and the second electrode is provided on a surface of the vibrating membrane or a surface of the substrate so as to face the first electrode. In this transducer, fine particles composed of an oxide film of a substance constituting the first electrode are arranged on the surface of the first electrode, and the diameter of the fine particles is 2 to 200 nm.
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25.发明专利Method for manufacturing capacity type mechanical/electrical conversion element 有权制造容量型机械/电气转换元件的方法
公开(公告)号：JP2010272956A
公开(公告)日：2010-12-02
申请号：JP2009121006
申请日：2009-05-19
Inventor： CHO KENROKU
CPC classification number: B06B1/0292 , B81B2201/0271 , B81B2203/0127 , B81C1/00476 , B81C2201/0139
Abstract: PROBLEM TO BE SOLVED: To provide a method for manufacturing a capacity type mechanical and electrical conversion element, raising and stabilizing a sacrificial layer etching rate for a large area and a narrow electrode spacing (gap) and improving the productivity (uniformity and yield) for an array element.
SOLUTION: The capacity type mechanical and electrical conversion element has: a substrate; a cavity; a first electrode; and a second electrode. The cavity is formed of a vibrating membrane held at a predetermined spacing from the substrate by a support member arranged on the substrate. The surface of the first electrode is exposed to the cavity. The surface of the second electrode is faced with the cavity and covered by an insulating film. The first electrode is prepared on the surface of the substrate or the lower surface of the vibrating membrane. The second electrode is associated with the first electrode and prepared on the surface of the substrate or the surface of the vibrating membrane. Fine particles composed of oxide films of material forming the first electrode are arranged on the surface of the first electrode. It is characterized in that the range of the diameter of the fine particles is 2 to 200 nm. The method for manufacturing the capacity type mechanical/electrical conversion element is also provided.
COPYRIGHT: (C)2011,JPO&INPITAbstract translation: 要解决的问题：提供一种制造容量型机电转换元件的方法，提高和稳定大面积的牺牲层蚀刻速率和窄的电极间隔（间隙）并提高生产率（均匀性和 yield）用于数组元素。 解决方案：容量型机电转换元件具有：基板; 一个空腔 第一电极; 和第二电极。 空腔由设置在基板上的支撑构件以与基板保持预定间隔的振动膜形成。 第一电极的表面暴露于空腔。 第二电极的表面面对空腔并被绝缘膜覆盖。 在基板的表面或振动膜的下表面上制备第一电极。 第二电极与第一电极相关联并且准备在衬底的表面或振动膜的表面上。 由形成第一电极的材料的氧化物膜构成的微粒被布置在第一电极的表面上。 其特征在于，微粒直径的范围为2〜200nm。 还提供了用于制造容量型机电转换元件的方法。 版权所有（C）2011，JPO＆INPIT
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Patent Agency Ranking
公开(公告)号：US20190023563A1
公开(公告)日：2019-01-24
申请号：US15757672
申请日：2016-09-09
Applicant: DENSO CORPORATION
Inventor： Akira OGAWA , Yoshitaka NODA , Tetsuo YOSHIOKA , Yuhei SHIMIZU
IPC: B81C1/00
CPC classification number: B81C1/00579 , B81B2201/033 , B81C2201/0112 , B81C2201/0132 , B81C2201/0139 , B81C2201/0142 , G01P15/0802 , G01P15/125 , G01P2015/0814 , G01P2015/0882
Abstract: A semiconductor device production method includes performing trench etching to form a trench in a thickness direction of a semiconductor layer so that both of a first pattern portion and a second pattern portion whose side walls face each other across the trench are formed. In the trench etching, the semiconductor layer is etched and removed while a protective film is formed on a surface of the semiconductor layer, and the trench etching is performed so that the first pattern portion and the second pattern portion are configured to have a same potential or a same temperature during the trench etching.
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27.发明授权Surfactant-enhanced protection of micromechanical components from galvanic degradation 失效表面活性剂增强了微机械部件对电流退化的保护公开(公告)号：US07560037B2
公开(公告)日：2009-07-14
申请号：US11213466
申请日：2005-08-26
Applicant: Bevan Staple , Jillian Buriak
Inventor： Bevan Staple , Jillian Buriak
IPC: H01B13/00
CPC classification number: B82Y30/00 , B81C1/00476 , B81C1/00801 , B81C2201/0114 , B81C2201/0133 , B81C2201/0139 , B81C2201/053
Abstract: A microelectromechanical structure is formed by depositing sacrificial and structural material over a substrate to form a structural layer on a component electrically attached with the substrate. The galvanic potential of the structural layer is greater than the galvanic potential of the component. At least a portion of the structural material is covered with a protective material that has a galvanic potential less than or equal to the galvanic potential of the component. The sacrificial material is removed with a release solution. At least one of the protective material and release solution is surfactanated, the surfactant functionalizing a surface of the component.
Abstract translation: 通过将牺牲和结构材料沉积在衬底上以在与衬底电连接的部件上形成结构层来形成微机电结构。 结构层的电位大于元件的电位。 结构材料的至少一部分被保护材料覆盖，该保护材料具有小于或等于部件的电位的电位。 牺牲材料用释放溶液除去。 保护材料和释放溶液中的至少一种被表面活性化，表面活性剂对组分的表面进行官能化。
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28.发明申请Surfactant-enhanced protection of micromechanical components from galvanic degradation 失效表面活性剂增强了微机械部件对电流退化的保护公开(公告)号：US20070289940A1
公开(公告)日：2007-12-20
申请号：US11213466
申请日：2005-08-26
Applicant: Bevan Staple , Jillian Buriak
Inventor： Bevan Staple , Jillian Buriak
IPC: H01B13/00
CPC classification number: B82Y30/00 , B81C1/00476 , B81C1/00801 , B81C2201/0114 , B81C2201/0133 , B81C2201/0139 , B81C2201/053
Abstract: A microelectromechanical structure is formed by depositing sacrificial and structural material over a substrate to form a structural layer on a component electrically attached with the substrate. The galvanic potential of the structural layer is greater than the galvanic potential of the component. At least a portion of the structural material is covered with a protective material that has a galvanic potential less than or equal to the galvanic potential of the component. The sacrificial material is removed with a release solution. At least one of the protective material and release solution is surfactanated, the surfactant functionalizing a surface of the component.
Abstract translation: 通过将牺牲和结构材料沉积在衬底上以在与衬底电连接的部件上形成结构层来形成微机电结构。 结构层的电位大于元件的电位。 结构材料的至少一部分被保护材料覆盖，该保护材料具有小于或等于部件的电位的电位。 牺牲材料用释放溶液除去。 保护材料和释放溶液中的至少一种被表面活性化，表面活性剂对组分的表面进行官能化。
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29.发明授权公开(公告)号：US06759265B2
公开(公告)日：2004-07-06
申请号：US10268711
申请日：2002-10-10
Applicant: Hans Artmann , Thorsten Pannek
Inventor： Hans Artmann , Thorsten Pannek
IPC: H01L2100
CPC classification number: B81C1/0069 , B81B2203/0127 , B81B2203/0315 , B81C2201/0115 , B81C2201/0136 , B81C2201/0139
Abstract: In a method for producing a diaphragm sensor unit having a semiconductor material substrate, a flat diaphragm and an insulating well for thermal insulation below the diaphragm are generated, for the formation of sensor element structures for at least one sensor. The substrate, made of semiconductor material, in a specified region, which defines sensor element structures, receives a deliberately different doping from the surrounding semiconductor material, that porous semiconductor material is generated from semiconductor material sections between the regions distinguished by doping, and semiconductor material in the well region under semiconductor is rendered porous and under parts of the sensor element structure is removed and/or rendered porous.
Abstract translation: 在制造具有半导体材料基板的隔膜传感器单元的方法中，产生用于形成用于至少一个传感器的传感器元件结构的隔膜下方的平坦隔膜和隔热绝缘孔。 由限定传感器元件结构的特定区域中的由半导体材料制成的衬底接收与周围半导体材料的故意不同的掺杂，多孔半导体材料是由掺杂区域之间的半导体材料部分和半导体材料 在半导体中的阱区域被多孔化并且在传感器元件结构的部分被去除和/或变得多孔的情况下。
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30.发明申请Surfactant-enhanced protection of micromechanical components from galvanic degradation 有权表面活性剂增强了微机械部件对电流退化的保护公开(公告)号：US20040065637A1
公开(公告)日：2004-04-08
申请号：US10242213
申请日：2002-09-12
Applicant: Network Photonics, Inc.
Inventor： Bevan Staple , Jillian Buriak
IPC: C23F001/00
CPC classification number: B82Y30/00 , B81C1/00476 , B81C1/00801 , B81C2201/0114 , B81C2201/0133 , B81C2201/0139 , B81C2201/053
Abstract: A microelectromechanical structure is formed by depositing sacrificial and structural material over a substrate to form a structural layer on a component electrically attached with the substrate. The galvanic potential of the structural layer is greater than the galvanic potential of the component. At least a portion of the structural material is covered with a protective material that has a galvanic potential less than or equal to the galvanic potential of the component. The sacrificial material is removed with a release solution. At least one of the protective material and release solution is surfactanated, the surfactant functionalizing a surface of the component.
Abstract translation: 通过将牺牲和结构材料沉积在衬底上以在与衬底电连接的部件上形成结构层来形成微机电结构。 结构层的电位大于元件的电位。 结构材料的至少一部分被保护材料覆盖，该保护材料具有小于或等于部件的电位的电位。 牺牲材料用释放溶液除去。 保护材料和释放溶液中的至少一种被表面活性化，表面活性剂对组分的表面进行官能化。
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