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    Photochemical method for manufacturing nanometrically surface-decorated substrates
    24.
    发明公开
    Photochemical method for manufacturing nanometrically surface-decorated substrates 有权
    Photochemische Methodefürdie Produktion vonoberflächenverziertenSubstraten im Nanometerbereich

    公开(公告)号：EP1760527A1

    公开(公告)日：2007-03-07

    申请号：EP05019237.6

    申请日：2005-09-05

    Applicant: DWI an der RWTH Aachen e.V.

    Inventor： Mela, Petra ,  Ott, Marcell ,  Spatz, Prof. Dr. Joachim ,  Gorzolnik, Blazej ,  Möller, Prof. Dr. Martin

    IPC: G03F7/16 ,  G03F7/004 ,  G03F7/038 ,  H01L21/30 ,  G03F7/033

    CPC classification number: B81C1/00206 ,  B81C2201/0159 ,  B82Y30/00 ,  G03F7/0047 ,  G03F7/033 ,  G03F7/038 ,  G03F7/0384 ,  G03F7/0751 ,  G03F7/165

    Abstract: The present invention relates to a photochemical method for manufacturing nanometrically surface-decorated substrates, i.e. the creation of periodic and aperiodic patterns of highly ordered inorganic nanostructures on a substrate. This method is based on the selective photochemical modification of a self-assembled monolayer of metal compound loaded polymer core-shell systems on widely variable substrates. Light exposure through an appropriate mask causes selective chemical modification of the polymer core shell system. By subsequently placing the substrate in an appropriate chemical solution that eradicates the non-modified polymer, the pattern given by the used mask is reproduced on the surface. Finally, the remaining organic matrix is removed and metal salt is transformed to the single metal or metal oxide nanodots by means of gas plasma treatment.

    Abstract translation: 本发明涉及一种用于制造纳米表面装饰基板的光化学方法，即在基板上产生高阶无机纳米结构的周期性和非周期性图案。 该方法基于在广泛可变底物上的金属化合物加载的聚合物核 - 壳体系的自组装单层的选择性光化学修饰。 通过适当的掩模曝光会导致聚合物核壳系统的选择性化学改性。 通过随后将基底放置在消除未改性聚合物的合适的化学溶液中，使用的掩模给出的图案在表面上再现。 最后，除去剩余的有机基质，并通过气体等离子体处理将金属盐转化为单一金属或金属氧化物纳米点。

    Microstructure and methods for fabricating such structure
    27.
    发明公开
    Microstructure and methods for fabricating such structure 失效
    Mikrostruktur und Verfahren zu ihrer Herstellung

    公开(公告)号：EP0869556A1

    公开(公告)日：1998-10-07

    申请号：EP98104739.2

    申请日：1998-03-17

    Applicant: SIEMENS AKTIENGESELLSCHAFT

    Inventor： Tobben, Dirk ,  Weigand, Peter

    IPC: H01L27/108 ,  H01L21/32

    CPC classification number: B81C1/00111 ,  B81C2201/0109 ,  B81C2201/0159 ,  H01L27/10852 ,  H01L28/87 ,  H01L28/88 ,  H01L28/91 ,  H01L28/92

    Abstract: A method for forming a microstructure includes photolithographically forming a vertically extending post on a portion of a surface of a substrate to provide a first structure. A flowable, sacrificial material is deposited over a surface of the first structure. The flowable, sacrificial materially flows off the top surface and sidewall portions of the post onto adjacent portions of the surface of the substrate to provide a second structure. A non-sacrificial material is deposited over a surface of the second structure. The non-sacrificial material is deposited to conform to the surface of the second structure. The non-sacrificial is deposited over the sacrificial material, over the sidewall portions and over the top surface of the post. The deposited sacrificial material is selectively removed while the non-sacrificial material remains to form a third structure with a horizontal member provided by the non-sacrificial material. The horizontal member is supported a predetermined distance above the surface of the substrate by a lower portion of the post. The flowable material is a flowable oxide, for example, hydrogensilsesquioxane glass, and the post has a width less than 20 µm. The resulting structure, formed with a single photolithographic step, is used for supporting a capacitor deposited over it. The capacitor is formed as a sequence of deposition steps; i.e., depositing a first conductive layer over a surface of the support structure; depositing a dielectric layer over the conductive layer; and depositing a second conductive layer over the dielectric layer.

    Abstract translation: 一种用于形成微结构的方法包括光刻地形成垂直延伸的柱的一部分，以提供第一结构。 可流动的牺牲材料沉积在第一结构的表面上。 可流动的牺牲物质地从柱的顶表面和侧壁部分流出到衬底的表面的相邻部分上以提供第二结构。 非牺牲材料沉积在第二结构的表面上。 沉积非牺牲材料以符合第二结构的表面。 非牺牲材料沉积在牺牲材料上，在侧壁部分上方并在柱的顶表面上方。 选择性地去除沉积的牺牲材料，同时非牺牲材料保留以形成具有由非牺牲材料提供的水平构件的第三结构。 水平构件通过柱的下部支撑在基板的表面上方预定的距离。 可流动材料是可流动的氧化物，例如氢倍半硅氧烷玻璃，柱的宽度小于20μm。 用单个光刻步骤形成的所得结构用于支撑沉积在其上的电容器。 电容器形成为一系列沉积步骤; 即在支撑结构的表面上沉积第一导电层; 在导电层上沉积介电层; 以及在所述电介质层上沉积第二导电层。

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