QUARTZ GLASS CRUCIBLE FOR PULLING UP SILICON SINGLE CRYSTAL AND PROCESS FOR PRODUCING THE SAME
    27.
    发明申请
    QUARTZ GLASS CRUCIBLE FOR PULLING UP SILICON SINGLE CRYSTAL AND PROCESS FOR PRODUCING THE SAME 审中-公开
    用于拉丝硅单晶及其生产方法的QUARTZ玻璃纤维

    公开(公告)号:WO00006811A1

    公开(公告)日:2000-02-10

    申请号:PCT/JP1999/004006

    申请日:1999-07-27

    Abstract: The inner surface of a quartz glass crucible is crystallized, without adding any impurity, during the period in which a silicon single crystal is pulled up, whereby the deterioration of the inner surface of the crucible can be inhibited while preventing any impurity causative of crystal defects from coming into the single crystal. This crucible is effective in heightening the degree of conversion into a single crystal and is suitable for improving crucible productivity and the quality of silicon single crystals. The crucible is characterized by comprising a crucible base (3) which is a translucent quartz glass layer and a synthetic quartz glass layer (4) formed on the inner wall of the base (3) and by having been constituted so that that part of the inner crucible surface which is surrounded by a brown ring is evenly crystallized during the period in which a silicon single crystal is pulled up.

    Abstract translation: 石英玻璃坩埚的内表面在硅单晶被拉起的期间内结晶而不添加任何杂质,从而可以抑制坩埚内表面的劣化,同时防止造成晶体缺陷的杂质 从进入单晶。 该坩埚有效地提高了转化为单晶的程度,适用于提高坩埚生产率和硅单晶的质量。 该坩埚的特征在于包括:半透明石英玻璃层的坩埚基座(3)和形成在基座(3)的内壁上的合成石英玻璃层(4),并且构成为: 被棕色环包围的内坩埚表面在提拉硅单晶的期间内均匀地结晶。

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