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    FIELD EMISSION DEVICE AND A METHOD OF FORMING SUCH A DEVICE
    23.
    发明公开
    FIELD EMISSION DEVICE AND A METHOD OF FORMING SUCH A DEVICE 有权
    场发射器件和形成这种器件的方法

    公开(公告)号：EP1620873A1

    公开(公告)日：2006-02-01

    申请号：EP04729480.6

    申请日：2004-04-26

    Applicant: Koninklijke Philips Electronics N.V.

    Inventor： VISSER, Hugo, M. ,  VERSCHUUREN, Marcus, A. ,  VINK, Teunis, J.

    IPC: H01J9/02 ,  H01J1/304

    CPC classification number: H01J1/3044 ,  H01J3/022 ,  H01J9/025 ,  H01J2201/30407 ,  H01J2201/30426 ,  H01J2329/00

    Abstract: A field emission device (1) may be used for emitting electrons in, for example, a field emission display (FED). Field emission tips (40) are used for the emitting of electrons in the field emission device (1). In operation of the field emission device (1) a voltage is applied between a first electrode (4) having electrical contact with the field emission tip (40) and a second electrode (34) to make the field emission tip (40) emit electrons. To form a field emission tip (40) a layer of liquid material is applied on a substrate (2) provided with the first electrode (4). The layer of liquid material is embossed with a patterned stamp and subsequently cured to form a field emission tip structure (20). A conductive film (38) is applied on the field emission tip structure (20) to form a field emission tip (40) that has electrical contact with the first electrode (4).

    Abstract translation: 场发射装置（1）可用于在例如场致发射显示器（FED）中发射电子。 场发射尖端（40）用于场发射器件（1）中的电子发射。 在场发射器件（1）的操作中，在与场发射尖端（40）电接触的第一电极（4）和第二电极（34）之间施加电压以使场发射尖端（40）发射电子 。 为了形成场发射尖端（40），在设有第一电极（4）的基板（2）上施加液体材料层。 液态材料层压花图案化的印模并随后固化以形成场发射尖端结构（20）。 在场发射尖端结构（20）上施加导电膜（38）以形成与第一电极（4）电接触的场致发射尖端（40）。

    Field emission device and method for fabricating it
    25.
    发明公开
    Field emission device and method for fabricating it 失效
    Feldemmisionsvorrichtung und Verfahren zu deren Herstellung

    公开(公告)号：EP0716438A1

    公开(公告)日：1996-06-12

    申请号：EP94119217.1

    申请日：1994-12-06

    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

    Inventor： Bartha, Johann, Dr. ,  Greschner, Johann, Dr. ,  Wolf, Volkhard, Dr.

    IPC: H01J3/02 ,  H01J9/02 ,  H01J31/12

    CPC classification number: B82Y10/00 ,  H01J1/3042 ,  H01J9/025 ,  H01J2201/30403 ,  H01J2201/30407

    Abstract: The invention relates to the structure of a field emitter device, to the method of fabricating a field emitter device and to the use of the field emitter device in the technical field of flat panel displays.
    The field emission device comprises an array (1) of widely-spaced tips (2) for emitting electrons and a perforated extracting electrode (3) facing the array of tips. An individual series resistor is formed by each of said tips itself. The widely-spaced tips are not surrounded by a layer of electrically insulating material.
    The tips are not surrounded by an insulating layer and the tip end is not surrounded by a gate or extraction electrode. This avoids failures like shorts between the cathode electrode and the gate or extraction electrode which could occur due to inaccurate coating or etching processes and enhances the reliability and the life-time of the array of tips.
    To fabricate the field emission device a micromechanically manufactured array (1) of widely-spaced tips (2) and a micromechanically manufactured perforated extracting electrode (3) are provided. The outer sides of the perforated extracting electrode are bonded to the array in a way that the perforated extracting electrode is facing the array.
    With the array of widely-spaced tips and the perforated extracting electrode being fabricated separately and bonded together subsequently, both the number of process steps required for each of the two parts and the manufacturing process costs are reduced.

    Abstract translation: 本发明涉及场致发射器件的结构，制造场发射极器件的方法以及平面显示器技术领域中的场发射器器件的使用。 场发射装置包括用于发射电子的间隔较宽的尖端（2）的阵列（1）和面向阵列阵列的穿孔提取电极（3）。 单个串联电阻器由每个所述尖端本身形成。 宽间隔的尖端不被一层电绝缘材料包围。 尖端不被绝缘层包围，并且尖端不被栅极或引出电极包围。 这避免了由于不准确的涂层或蚀刻工艺而可能发生的阴极电极和栅极或引出电极之间的短路故障，并提高了尖端阵列的可靠性和使用寿命。 为了制造场发射装置，提供了一种微机械制造的广泛间隔的尖端（2）的阵列（1）和微机械制造的穿孔提取电极（3）。 穿孔提取电极的外侧以穿孔提取电极面向阵列的方式结合到阵列。 利用广泛间隔的尖端阵列和穿孔提取电极单独制造并且随后结合在一起，减少了两个部件中的每一个所需的工艺步骤数量和制造工艺成本。

    FIELD EMISSION DEVICE AND A METHOD OF FORMING SUCH A DEVICE
    26.
    发明授权
    FIELD EMISSION DEVICE AND A METHOD OF FORMING SUCH A DEVICE 有权
    场发射装置和方法生产同样

    公开(公告)号：EP1620873B1

    公开(公告)日：2006-10-11

    申请号：EP04729480.6

    申请日：2004-04-26

    Applicant: Koninklijke Philips Electronics N.V.

    Inventor： VISSER, Hugo, M. ,  VERSCHUUREN, Marcus, A. ,  VINK, Teunis, J.

    IPC: H01J9/02 ,  H01J1/304

    CPC classification number: H01J1/3044 ,  H01J3/022 ,  H01J9/025 ,  H01J2201/30407 ,  H01J2201/30426 ,  H01J2329/00

    Abstract: A field emission device (1) may be used for emitting electrons in, for example, a field emission display (FED). Field emission tips (40) are used for the emitting of electrons in the field emission device (1). In operation of the field emission device (1) a voltage is applied between a first electrode (4) having electrical contact with the field emission tip (40) and a second electrode (34) to make the field emission tip (40) emit electrons. To form a field emission tip (40) a layer of liquid material is applied on a substrate (2) provided with the first electrode (4). The layer of liquid material is embossed with a patterned stamp and subsequently cured to form a field emission tip structure (20). A conductive film (38) is applied on the field emission tip structure (20) to form a field emission tip (40) that has electrical contact with the first electrode (4).

    Verfahren zur Herstellung stabförmiger Siliziumstrukturen
    29.
    发明公开
    Verfahren zur Herstellung stabförmiger Siliziumstrukturen 失效
    Verfahren zur HerstellungstabförmigerSiliziumstrukturen。

    公开(公告)号：EP0618605A1

    公开(公告)日：1994-10-05

    申请号：EP94103619.6

    申请日：1994-03-09

    Applicant: SIEMENS AKTIENGESELLSCHAFT

    Inventor： Stengl, Reinhard, Dr., IBM Fishkill Facility ,  Hönlein, Wolfgang, Dr.

    IPC: H01J9/02 ,  H01J1/30 ,  H01J21/10 ,  H01L21/02

    CPC classification number: H01J1/3042 ,  H01J9/025 ,  H01J21/105 ,  H01J2201/30403 ,  H01J2201/30407

    Abstract: Verfahren zur Herstellung stabförmiger oder zylinderförmiger Strukturen im nm-Bereich auf einem Substrat (1) aus Silizium, bei dem in dem Loch einer Maskenschicht (2) aus Oxid ein erster Zylinder (3) aus Silizium selektiv epitaktisch abgeschieden wird, die Maskenschicht (2) entfernt wird, das Silizium zu einer Oxidschicht (4) einer solchen Dicke (d) oxidiert wird, daß von dem ersten Zylinder (3) der Höhe (h) ein dünnerer zweiter Zylinder (5) mit praktisch derselben Höhe (H) übrig bleibt und bei dem in einem letzten Schritt diese Oxidschicht (4) entfernt wird, so daß der zweite Zylinder (5) einen freistehenden Siliziumstab auf der Oberfläche des Substrates (1) bildet.

    Abstract translation: 在硅衬底（1）的nm范围内生产棒状（棒状）或圆柱形结构的方法，其中在氧化物掩模层（2）的孔中选择性地外延生长硅的第一圆柱体（3） ，去除掩模层（2），硅被氧化成如此厚度（d）的氧化物层（4），即从具有高度（h）的第一气缸（3），较薄的第二气缸（5） 具有几乎相同的高度（H），并且其中，在最终步骤中，去除该氧化物层（4），使得第二圆筒（5）在基板（1）的表面上形成裸硅棒。

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