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    METHOD OF FABRICATING ELECTRON EMISSION SOURCE, ELECTRON EMISSION DEVICE, AND ELECTRON EMISSION DISPLAY DEVICE INCLUDING THE ELECTRON EMISSION DEVICE
    23.
    发明申请
    METHOD OF FABRICATING ELECTRON EMISSION SOURCE, ELECTRON EMISSION DEVICE, AND ELECTRON EMISSION DISPLAY DEVICE INCLUDING THE ELECTRON EMISSION DEVICE 审中-公开
    制造电子发射源的方法，电子发射装置和包括电子发射装置的电子发射显示装置

    公开(公告)号：US20080278062A1

    公开(公告)日：2008-11-13

    申请号：US11865208

    申请日：2007-10-01

    Applicant: Hee-Sung MOON ,  Jae-Myung KIM ,  Yoon-Jin KIM

    Inventor： Hee-Sung MOON ,  Jae-Myung KIM ,  Yoon-Jin KIM

    IPC: H01J1/62 ,  H01J9/02 ,  B05D5/12

    CPC classification number: H01J63/06 ,  H01J1/304 ,  H01J9/025 ,  H01J29/04 ,  H01J31/127 ,  H01J63/02 ,  H01J2201/30453 ,  H01J2201/30484 ,  H01J2329/0444 ,  H01J2329/0465

    Abstract: A method is provided for fabricating an electron emission source which can attain improved electron emission efficiency and has simplified manufacturing processes. Also provided are an electron emission display device and an electron emission display device fabricated using the method of fabricating an electron emission source. The method includes forming an electrode, forming a carbide compound thin film on the electrode and forming a carbide-induced carbon thin film layer from the carbide compound thin film using an etching gas. The electron emission device and the electron emission display device each include a first electrode, a second electrode disposed to face the first electrode, and a carbide-induced carbon thin film layer formed to be electrically connected to f the first electrode or the second electrode.

    Abstract translation: 提供了一种用于制造能够获得改善的电子发射效率和简化制造工艺的电子发射源的方法。 还提供了使用制造电子发射源的方法制造的电子发射显示装置和电子发射显示装置。 该方法包括形成电极，在电极上形成碳化物化合物薄膜，并使用蚀刻气体从碳化物化合物薄膜形成碳化物诱导的碳薄膜层。 电子发射装置和电子发射显示装置各自包括第一电极，与第一电极相对设置的第二电极和形成为与第一电极或第二电极电连接的碳化物诱导碳薄膜层。

    Thermal-field type electron source composed of transition metal carbide material
    27.
    发明授权
    Thermal-field type electron source composed of transition metal carbide material 有权
    由过渡金属碳化物材料组成的热场型电子源

    公开(公告)号：US09490098B1

    公开(公告)日：2016-11-08

    申请号：US14992870

    申请日：2016-01-11

    Applicant: Applied Physics Technologies, Inc.

    Inventor： William A. Mackie ,  Gerald G. Magera

    IPC: H01J1/146 ,  H01J1/148 ,  H01J19/10 ,  H01J1/14

    CPC classification number: H01J1/148 ,  H01J1/14 ,  H01J1/146 ,  H01J19/10 ,  H01J37/06 ,  H01J2201/196 ,  H01J2201/2889 ,  H01J2201/30484 ,  H01J2201/317 ,  H01J2237/06316

    Abstract: An electron source is made from mixed-metal carbide materials of high refractory nature. Producing field-enhanced thermionic emission, i.e., thermal-field or extended Schottky emission, from these materials entails the use of a certain low work function crystallographic direction, such as, for example, (100), (210), and (310). These materials do not naturally facet because of their refractory nature. The disclosed electron source made from transition metal carbide material is especially useful when installed in a scanning electron microscope (SEM) performing advanced imaging applications that require a high brightness, high beam current source.

    Abstract translation: 电子源由具有高耐火性质的混合金属碳化物材料制成。 从这些材料产生场强增强的热离子发射，即热场或延伸的肖特基发射需要使用某种低功函数的晶体学方向，例如（100），（210）和（310） 。 这些材料由于其耐火性质而不自然而然。 所披露的由过渡金属碳化物材料制成的电子源在安装在需要高亮度，远光束电流源的先进成像应用的扫描电子显微镜（SEM）中是特别有用的。

    COLD FIELD ELECTRON EMITTERS BASED ON SILICON CARBIDE STRUCTURES
    28.
    发明申请
    COLD FIELD ELECTRON EMITTERS BASED ON SILICON CARBIDE STRUCTURES 审中-公开
    基于碳化硅结构的冷场电子发射体

    公开(公告)号：US20160118214A1

    公开(公告)日：2016-04-28

    申请号：US14990035

    申请日：2016-01-07

    Applicant: Fred Sharifi ,  Henry Lezec ,  Myung-Gyu Kang

    Inventor： Fred Sharifi ,  Henry Lezec ,  Myung-Gyu Kang

    IPC: H01J1/304

    CPC classification number: H01J1/3044 ,  B82Y30/00 ,  B82Y40/00 ,  B82Y99/00 ,  C25F3/02 ,  H01J1/304 ,  H01J1/3046 ,  H01J9/022 ,  H01J9/025 ,  H01J2201/3048 ,  H01J2201/30484 ,  Y10S977/814 ,  Y10S977/888 ,  Y10S977/939

    Abstract: A cold cathode field emission electron source capable of emission at levels comparable to thermal sources is described. Emission in excess of 6 A/cm2 at 7.5 V/μm is demonstrated in a macroscopic emitter array. The emitter has a monolithic and rigid porous semiconductor nanostructure with uniformly distributed emission sites, and is fabricated through a room temperature process which allows for control of emission properties. These electron sources can be used in a wide range of applications, including microwave electronics and x-ray imaging for medicine and security.

    Abstract translation: 描述了能够以与热源相当的水平发射的冷阴极场致发射电子源。 在宏观发射极阵列中证明了在7.5V /μm下超过6A / cm 2的发射。 发射器具有均匀分布的发射位点的单片和刚性多孔半导体纳米结构，并且通过允许控制发射特性的室温工艺制造。 这些电子源可用于广泛的应用，包括微波电子学和医学和安全性的x射线成像。

    Field electron emission source
    30.
    发明授权
    Field electron emission source 有权
    场电子发射源

    公开(公告)号：US08350459B2

    公开(公告)日：2013-01-08

    申请号：US12180210

    申请日：2008-07-25

    Applicant: Li Qian ,  Liang Liu ,  Shou-Shan Fan

    Inventor： Li Qian ,  Liang Liu ,  Shou-Shan Fan

    IPC: H01J1/46 ,  H01J1/52 ,  H01J17/04 ,  H01J17/12 ,  H01J19/38 ,  H01J19/40 ,  H01J21/10

    CPC classification number: H01J31/127 ,  H01J1/304 ,  H01J3/021 ,  H01J9/025 ,  H01J2201/30484 ,  H01J2201/30492 ,  H01J2201/30496 ,  H01J2203/0272

    Abstract: A method for manufacturing a field electron emission source includes: providing an insulating substrate; patterning a cathode layer on at least one portion of the insulating substrate; forming a number of emitters on the cathode layer; coating a photoresist layer on the insulating substrate, the cathode layer and the emitters; exposing predetermined portions of the photoresist layer to radiation, wherein the exposed portions are corresponding to the emitters; forming a mesh structure on the photoresist layer; and removing the exposed portions of photoresist layer. The method can be easily performed and the achieved the field electron emission source has a high electron emission efficiency.

    Abstract translation: 场致发射源的制造方法包括：提供绝缘基板; 在绝缘基板的至少一部分上构图阴极层; 在阴极层上形成多个发射体; 在绝缘基板，阴极层和发射体上涂覆光致抗蚀剂层; 将光致抗蚀剂层的预定部分暴露于辐射，其中暴露部分对应于发射体; 在光致抗蚀剂层上形成网状结构; 并去除光致抗蚀剂层的暴露部分。 该方法可以容易地进行，并且实现了场电子发射源具有高的电子发射效率。

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