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    Method for the manufacture of a thin film actuated mirror array
    383.
    发明授权
    Method for the manufacture of a thin film actuated mirror array 失效
    用于制造薄膜致动反射镜阵列的方法

    公开(公告)号：US06203715B1

    公开(公告)日：2001-03-20

    申请号：US09232824

    申请日：1999-01-19

    Applicant: You-Kwang Kim ,  Jae-Hyuk Chung

    Inventor： You-Kwang Kim ,  Jae-Hyuk Chung

    IPC: G02B508

    CPC classification number: B81C1/00174 ,  B81B2201/042 ,  B81C2201/0109 ,  B81C2201/117 ,  G02B26/0858 ,  G21K1/06 ,  G21K2201/067

    Abstract: An inventive method for the manufacture of a thin film actuated mirror array comprises the steps of: preparing an active matrix including a substrate, an array of switching devices and an array of connecting terminals; forming a first sacrificial layer including an array of empty cavities; forming an array of actuating structures, each of the actuating structures including an elastic member, a lower electrode, an electrodisplacive member, an upper electrode and a via contact; forming a second sacrificial layer including an array of empty slots; forming an array of mirrors; removing the first and the second sacrificial layer to thereby form the thin film actuated mirror array. The use of a poly-Si as the material for the first and the second sacrificial layers will ensure an easy flattening thereof and an easy removal thereof, resulting an increased otpical efficiency in the thin film actuated mirror thus formed.

    Abstract translation: 用于制造薄膜致动反射镜阵列的创造性方法包括以下步骤：制备包括基板，开关装置阵列和连接端子阵列的有源矩阵; 形成包括空腔阵列的第一牺牲层; 形成致动结构的阵列，每个致动结构包括弹性构件，下电极，电致位移构件，上电极和通孔接触件; 形成包括空槽阵列的第二牺牲层; 形成一组镜子; 去除第一和第二牺牲层，从而形成薄膜致动反射镜阵列。 使用多晶硅作为第一牺牲层和第二牺牲层的材料将确保其容易的平坦化和易于除去，从而在由此形成的薄膜致动反射镜中产生增加的效率。

    Methods of forming void regions dielectric regions and capacitor constructions
    384.
    发明授权
    Methods of forming void regions dielectric regions and capacitor constructions 有权
    形成空隙区电介质区域和电容器结构的方法

    公开(公告)号：US6140200A

    公开(公告)日：2000-10-31

    申请号：US146117

    申请日：1998-09-02

    Applicant: Jerome Michael Eldridge

    Inventor： Jerome Michael Eldridge

    IPC: B81B3/00 ,  H01L21/02 ,  H01L21/311 ,  H01L21/20

    CPC classification number: B81C1/00119 ,  B81C1/00047 ,  H01L21/31138 ,  H01L28/40 ,  B81B2203/0315 ,  B81B2203/0338 ,  B81C2201/0109 ,  B81C2201/0146

    Abstract: In one aspect, the invention includes a method of forming a void region associated with a substrate, comprising: a) providing a substrate; b) forming a sacrificial mass over the substrate; c) subjecting the mass to hydrogen to convert a component of the mass to a volatile form; and d) volatilizing the volatile form of the component from the mass to leave a void region associated with the substrate. In another aspect, the invention includes a method of forming a capacitor construction, comprising: a) forming a first capacitor electrode over a substrate; b) forming a sacrificial material proximate the first capacitor electrode; c) forming a second capacitor electrode proximate the sacrificial material, the second capacitor electrode being separated from the first capacitor electrode by the sacrificial material, at least one of the first and second electrodes being a metal-comprising layer; and d) subjecting the sacrificial material to conditions which transport a component from the sacrificial material to the metal-comprising layer, the transported component leaving a void region between the first and second capacitor electrodes.

    Abstract translation: 一方面，本发明包括形成与衬底相关联的空隙区域的方法，包括：a）提供衬底; b）在衬底上形成牺牲物质; c）使所述物质经受氢气将所述物质的组分转化为挥发性形式; 以及d）从所述物质挥发所述组分的挥发性形式以留下与所述基材相关联的空隙区域。 另一方面，本发明包括一种形成电容器结构的方法，包括：a）在衬底上形成第一电容器电极; b）在第一电容器电极附近形成牺牲材料; c）在所述牺牲材料附近形成第二电容器电极，所述第二电容器电极通过所述牺牲材料与所述第一电容器电极分离，所述第一和第二电极中的至少一个是含金属的层; 以及d）对所述牺牲材料进行将组分从所述牺牲材料输送到所述含金属层的条件，所述传输部件在所述第一和第二电容器电极之间留下空隙区域。

    Process for manufacturing microstructure
    385.
    发明授权
    Process for manufacturing microstructure 失效
    微结构制造工艺

    公开(公告)号：US6020215A

    公开(公告)日：2000-02-01

    申请号：US844971

    申请日：1997-04-28

    Applicant: Takayuki Yagi ,  Masatake Akaike

    Inventor： Takayuki Yagi ,  Masatake Akaike

    IPC: B81B3/00 ,  B81C1/00 ,  G03F7/00 ,  H01H59/00 ,  H01L23/00 ,  H02N1/00 ,  H02N2/00 ,  H02N2/02 ,  H01L21/311

    CPC classification number: B81C1/0092 ,  B81C1/00936 ,  H01H59/0009 ,  H02N1/006 ,  B81B2203/0118 ,  B81C2201/0107 ,  B81C2201/0109 ,  B81C2203/031

    Abstract: A microstructure comprising a substrate (1), a patterned structure (beam member) (2) suspended over the substrate (1) with an air-space (4) therebetween and supporting structure (3) for suspending the patterned structure (2) over the substrate (1). The microstructure is prepared by using a sacrificial layer (7) which is removed to form the space between the substrate (1) and the patterned structure (2) adhered to the sacrificial layer. In the case of using resin as the material of the sacrificial layer, the sacrificial layer can be removed without causing sticking, and an electrode can be provided on the patterned structure. The microstructure can have application as electrostatic actuator, etc., depending on choice of shape and composition.

    Abstract translation: 一种微结构，其包括衬底（1），悬挂在衬底（1）上的图案化结构（梁构件）（2），其间具有空气空间（4）和用于将图案化结构（2）悬挂在其上的支撑结构（3） 基板（1）。 通过使用牺牲层（7）来制备微结构，所述牺牲层被除去以形成衬底（1）和附着到牺牲层的图案化结构（2）之间的空间。 在使用树脂作为牺牲层的材料的情况下，可以除去牺牲层而不引起粘附，并且可以在图案化结构上提供电极。 根据形状和组成的选择，微结构可以用作静电致动器等。

    Microstructure and methods for fabricating such structure
    386.
    发明授权
    Microstructure and methods for fabricating such structure 有权
    用于制造这种结构的微结构和方法

    公开(公告)号：US06015988A

    公开(公告)日：2000-01-18

    申请号：US197391

    申请日：1998-11-20

    Applicant: Dirk Tobben ,  Peter Weigand

    Inventor： Dirk Tobben ,  Peter Weigand

    IPC: H01L27/04 ,  B81B3/00 ,  H01L21/02 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/108 ,  H01L29/72

    CPC classification number: B81C1/00111 ,  H01L27/10852 ,  H01L28/87 ,  H01L28/91 ,  B81C2201/0109 ,  B81C2201/0159 ,  H01L28/88 ,  H01L28/92

    Abstract: A method for forming a microstructure includes photolithographically forming a vertically extending post on a portion of a surface of a substrate to provide a first structure. A flowable, sacrificial material is deposited over a surface of the first structure. The flowable, sacrificial materially flows off the top surface and sidewall portions of the post onto adjacent portions of the surface of the substrate to provide a second structure. A non-sacrificial material is deposited over a surface of the second structure. The non-sacrificial material is deposited to conform to the surface of the second structure. The non-sacrificial is deposited over the sacrificial material, over the sidewall portions and over the top surface of the post. The deposited sacrificial material is selectively removed while the non-sacrificial material remains to form a third structure with a horizontal member provided by the non-sacrificial material. The horizontal member is supported a predetermined distance above the surface of the substrate by a lower portion of the post. The flowable material is a flowable oxide, for example, hydrogensilsesquioxane glass, and the post has a width less than 20 .mu.m. The resulting structure, formed with a single photolithographic step, is used for supporting a capacitor deposited over it. The capacitor is formed as a sequence of deposition steps; i.e., depositing a first conductive layer over a surface of the support structure; depositing a dielectric layer over the conductive layer; and depositing a second conductive layer over the dielectric layer.

    Abstract translation: 一种用于形成微结构的方法包括光刻地形成垂直延伸的柱体，以在衬底表面的一部分上提供第一结构。 可流动的牺牲材料沉积在第一结构的表面上。 可流动的牺牲物质地从柱的顶表面和侧壁部分流出到衬底的表面的相邻部分上以提供第二结构。 非牺牲材料沉积在第二结构的表面上。 沉积非牺牲材料以符合第二结构的表面。 非牺牲材料沉积在牺牲材料上，在侧壁部分上方并在柱的顶表面上方。 选择性地去除沉积的牺牲材料，同时非牺牲材料保留以形成具有由非牺牲材料提供的水平构件的第三结构。 水平构件通过柱的下部支撑在基板的表面上方预定距离。 可流动材料是可流动的氧化物，例如氢倍半硅氧烷玻璃，柱的宽度小于20μm。 用单个光刻步骤形成的所得结构用于支撑沉积在其上的电容器。 电容器形成为一系列沉积步骤; 即在支撑结构的表面上沉积第一导电层; 在导电层上沉积介电层; 以及在所述电介质层上沉积第二导电层。

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